equivalent ZO 607
Abstract: 2sc5872 2SC5849 HTT1132E 702 smd transistor
Text: HTT1132E Silicon NPN Epitaxial Twin Transistor REJ03G0008-0100Z Rev.1.00 Apr.14.2003 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 6 Leads: 1.2 x 0.8 x 0.5 mm Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5872
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Original
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HTT1132E
REJ03G0008-0100Z
2SC5872
2SC5849
equivalent ZO 607
2sc5872
2SC5849
HTT1132E
702 smd transistor
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PDF
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702 transistor smd code
Abstract: HTT1132E 853 smd 6-pin 2SC5849 2SC5872 equivalent ZO 607 smd transistor 805 239 0532 smd transistor 718 transistor smd 661 752
Text: HTT1132E Silicon NPN Epitaxial Twin Transistor REJ03G0008-0100Z Rev.1.00 Apr.14.2003 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 6 Leads: 1.2 x 0.8 x 0.5 mm Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5872
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Original
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HTT1132E
REJ03G0008-0100Z
2SC5872
2SC5849
702 transistor smd code
HTT1132E
853 smd 6-pin
2SC5849
2SC5872
equivalent ZO 607
smd transistor 805 239
0532
smd transistor 718
transistor smd 661 752
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PDF
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16-2-472
Abstract: 161-717 45650 Transistor S 40442 SMD IC MARKING GP marking am1 smd 25804 403 inductor coil smd RF NPN POWER TRANSISTOR C 10-12 GHZ hn6501
Text: THN5601SF SOT-23F NPN SiGe RF POWER TRANSISTOR □ DESCRIPTION The THN5601SF is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-23F SMD package. The THN5601SF can be used as a driver device or an output device, depending on the specific application.
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Original
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THN5601SF
OT-23F
THN5601SF
OT-23F
26dBm
900MHz
IS21I
16-2-472
161-717
45650
Transistor S 40442
SMD IC MARKING GP
marking am1 smd
25804
403 inductor coil smd
RF NPN POWER TRANSISTOR C 10-12 GHZ
hn6501
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PDF
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Untitled
Abstract: No abstract text available
Text: PBHV8215Z 150 V, 2 A NPN high-voltage low VCEsat BISS transistor Rev. 01 — 11 November 2009 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
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Original
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PBHV8215Z
OT223
SC-73)
PBHV9215Z.
AEC-Q101
PBHV8215Z
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PDF
|
Untitled
Abstract: No abstract text available
Text: D A T A S H E E T CERLED Ceramic Chip SMD SMD – Wide-Viewing Angle CR 50 TE Photo Transistor Description The solder pads provide an excellent heat sink. For multi-sensors just choose 2 or more CERLEDs. Clear epoxy lens. Special Type CR50TE-DLF with daylight
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Original
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CR50TE-DLF)
DTS1005
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PDF
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V8215Z
Abstract: SC-73 MARKING CODE SMD IC PBHV8215Z 170KW
Text: PBHV8215Z 150 V, 2 A NPN high-voltage low VCEsat BISS transistor Rev. 01 — 11 November 2009 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
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Original
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PBHV8215Z
OT223
SC-73)
PBHV9215Z.
AEC-Q101
PBHV8215Z
V8215Z
SC-73
MARKING CODE SMD IC
170KW
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PDF
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Untitled
Abstract: No abstract text available
Text: TCNT2000 www.vishay.com Vishay Semiconductors Reflective Optical Sensor with Transistor Output A E FEATURES • Package type: SMD • Detector type: phototransistor • Dimensions L x W x H in mm : 3.4 x 2.7 x 1.5 • Operating range within > 20 % relative collector
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Original
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TCNT2000
TCNT2000
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Transistors SMD Type NPN Silicon Planar High Current High Performance Transistor FZT849 SOT-223 +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 +0.2 6.50-0.2 Extremely low equivalent on-resistance; RCE(sat)36mÙ at 5A. 7 Amp continuous collector current (20 Amp peak).
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Original
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FZT849
OT-223
300mA
100mA,
50MHz
100mA
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PDF
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TCNT2000
Abstract: Reflective Optical Sensor
Text: TCNT2000 www.vishay.com Vishay Semiconductors Reflective Optical Sensor with Transistor Output A E FEATURES • Package type: SMD • Detector type: phototransistor • Dimensions L x W x H in mm : 3.4 x 2.7 x 1.5 • Operating range within > 20 % relative collector
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Original
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TCNT2000
TCNT2000
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
Reflective Optical Sensor
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PDF
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npn smd 2a
Abstract: FZT869
Text: Transistors SMD Type NPN Silicon Planar High Current High Performance Transistor FZT869 SOT-223 +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 +0.2 6.50-0.2 Extremely low equivalent on-resistance; RCE(sat)44mÙ at 5A. 7 Amp continuous collector current (20 Amp peak).
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Original
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FZT869
OT-223
150mA
300mA
100mA,
50MHz
100mA
npn smd 2a
FZT869
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PDF
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Untitled
Abstract: No abstract text available
Text: SO T2 3 BSH205G2 20 V, P-channel Trench MOSFET 29 April 2015 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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Original
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BSH205G2
O-236AB)
AEC-Q101
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PDF
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4P04L06
Abstract: smd diode UM 08 smd diode 104 smd diode marking DD DIODE smd marking Ag
Text: Final Data Sheet IPB80P04P4L-06 IPI80P04P4L-06, IPP80P04P4L-06 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 6.4 mW ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1
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Original
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IPB80P04P4L-06
IPI80P04P4L-06,
IPP80P04P4L-06
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
IPI80P04P4L-06
4P04L06
smd diode UM 08
smd diode 104
smd diode marking DD
DIODE smd marking Ag
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PDF
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4P04L03
Abstract: IPP120P04P4L-03 IPB120P04P4L-03
Text: IPB120P04P4L-03 IPI120P04P4L-03, IPP120P04P4L-03 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 3.1 mW ID -120 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1
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Original
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IPB120P04P4L-03
IPI120P04P4L-03,
IPP120P04P4L-03
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
IPI120P04P4L-03
4P04L03
IPP120P04P4L-03
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PDF
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C67078-S1351-A2
Abstract: No abstract text available
Text: BUZ 102 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code
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Original
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O-220
C67078-S1351-A2
C67078-S1351-A2
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PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: IPB80P04P4L-08 IPI80P04P4L-08, IPP80P04P4L-08 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 7.9 mW ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow
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Original
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IPB80P04P4L-08
IPI80P04P4L-08,
IPP80P04P4L-08
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
IPB70P04P4L-08
4P04L08
IPI70P04P4L-08
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PDF
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4P04L08
Abstract: IPP70P04P4L-08 IPP80P04P4L-08 smd diode UM 08
Text: IPB80P04P4L-08 IPI80P04P4L-08, IPP80P04P4L-08 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 7.9 mW ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow
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Original
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IPB80P04P4L-08
IPI80P04P4L-08,
IPP80P04P4L-08
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
IPB70P04P4L-08
IPI70P04P4L-08
IPP70P04P4L-08
4P04L08
IPP70P04P4L-08
IPP80P04P4L-08
smd diode UM 08
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PDF
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4N06H1
Abstract: IPP120N06S4-H1 marking H1 IPB120N06S4-H1 IPI120N06S4-H1 PG-TO263-3-2
Text: IPB120N06S4-H1 IPI120N06S4-H1, IPP120N06S4-H1 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 2.1 mΩ ID 120 A Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • AEC Q101 qualified • MSL1 up to 260°C peak reflow
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Original
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IPB120N06S4-H1
IPI120N06S4-H1,
IPP120N06S4-H1
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
4N06H1
IPI120N06S4-H1
4N06H1
IPP120N06S4-H1
marking H1
IPB120N06S4-H1
IPI120N06S4-H1
PG-TO263-3-2
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PDF
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4P04L04
Abstract: IPP80P04P4L-04 4P04 IPI80P04P4L-04
Text: IPB80P04P4L-04 IPI80P04P4L-04, IPP80P04P4L-04 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 4.4 mW ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow
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Original
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IPB80P04P4L-04
IPI80P04P4L-04,
IPP80P04P4L-04
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
IPI80P04P4L-04
4P04L04
IPP80P04P4L-04
4P04
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PDF
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716296
Abstract: 6 PIN SMD IC FOR SMPS f3 double diode smd 1812B104K501 Finepower 716296 ICE3A0365 smd diode p80 650V-CoolMOS pin SMD IC FOR SMPS circuits zener diode 6w
Text: Application Note, V1.1, Apr 2006 AN-EVALM-ICE3A0365 6W 12.5V SMPS Evaluation Board with CoolSETTM F3 ICE3A0365 CoolBIAS-F3 Power Management & Supply N e v e r s t o p t h i n k i n g . Edition 2006-04-11 Published by Infineon Technologies Asia Pacific, 168 Kallang Way,
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Original
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AN-EVALM-ICE3A0365
ICE3A0365
herein9102
ICE3A0365
ICE3B0565"
716296
6 PIN SMD IC FOR SMPS
f3 double diode smd
1812B104K501
Finepower 716296
smd diode p80
650V-CoolMOS
pin SMD IC FOR SMPS circuits
zener diode 6w
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PDF
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k22 sot23
Abstract: semiconductor date Code smd-transistor
Text: Labeling Specification LABEL SPECS 167 Labeling Specification Central Semiconductor Corp. www.centralsemi.com CENTRAL - ® - 1.0 Purpose: Sem iconductor Devices C M K T 2 2 2 2 A TR ITEM. SMD-TRANSISTOR D E S C R IP T IO N . ®"pr ~ Discrete CUSTOMER ITEM.
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OCR Scan
|
M96286
k22 sot23
semiconductor date Code
smd-transistor
|
PDF
|
BUZ102
Abstract: smd transistor py
Text: SIEMENS BUZ 102 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dvfdt rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type Vbs BUZ102 50 V b 42 A flbston Package Ordering Code
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OCR Scan
|
O-220
BUZ102
C67078-S1351-A2
BUZ102
smd transistor py
|
PDF
|
smd diode T42
Abstract: smd transistor 718
Text: SIEMENS BUZ 102AL SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • di//di rated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type BUZ 102AL Vds 50 V b flDS on
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OCR Scan
|
102AL
O-220
C67078-S1356-A2
l45bfi
fl23Sb05
235bOS
smd diode T42
smd transistor 718
|
PDF
|
smd transistor 718
Abstract: 42AL bss 97 transistor
Text: SIEMENS B U Z 102A L SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • d tfd f rated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type BUZ 102AL VÒS 50 V b 42 A
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OCR Scan
|
O-220
102AL
C67078-S1356-A2
smd transistor 718
42AL
bss 97 transistor
|
PDF
|
buz102
Abstract: No abstract text available
Text: SIEMENS BUZ 102 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/d/ rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Pin 1 Pin 2 Type Vbs BUZ102 50 V b 42 A Pin 3 D G S ^DS on
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OCR Scan
|
O-220
BUZ102
C67078-S1351-A2
fl23Sb05
023Sfc
35bQ5
00fl45b
buz102
|
PDF
|
