equivalent ZO 607
Abstract: 2sc5872 2SC5849 HTT1132E 702 smd transistor
Text: HTT1132E Silicon NPN Epitaxial Twin Transistor REJ03G0008-0100Z Rev.1.00 Apr.14.2003 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 6 Leads: 1.2 x 0.8 x 0.5 mm Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5872
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Original
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HTT1132E
REJ03G0008-0100Z
2SC5872
2SC5849
equivalent ZO 607
2sc5872
2SC5849
HTT1132E
702 smd transistor
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PDF
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702 transistor smd code
Abstract: HTT1132E 853 smd 6-pin 2SC5849 2SC5872 equivalent ZO 607 smd transistor 805 239 0532 smd transistor 718 transistor smd 661 752
Text: HTT1132E Silicon NPN Epitaxial Twin Transistor REJ03G0008-0100Z Rev.1.00 Apr.14.2003 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 6 Leads: 1.2 x 0.8 x 0.5 mm Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5872
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Original
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HTT1132E
REJ03G0008-0100Z
2SC5872
2SC5849
702 transistor smd code
HTT1132E
853 smd 6-pin
2SC5849
2SC5872
equivalent ZO 607
smd transistor 805 239
0532
smd transistor 718
transistor smd 661 752
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PDF
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993 395 pnp npn
Abstract: bc237 smd sot23 package transistor TO-92 bc108 TRANSISTOR BC337 SMD 702 TRANSISTOR smd SOT23 2PB601AQ BC548 TRANSISTOR SMD bc548 TO-92 Bd135 smd 2PC945Q
Text: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page General purpose amplification and switching transistors Low-power transistors 2 5 – 23 26 Transistor arrays 7 – 29 29 29 Medium-power transistors 8 9 – 30 31 10
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Original
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BRY61
BRY62
OT143B
993 395 pnp npn
bc237 smd sot23 package
transistor TO-92 bc108
TRANSISTOR BC337 SMD
702 TRANSISTOR smd SOT23
2PB601AQ
BC548 TRANSISTOR SMD
bc548 TO-92
Bd135 smd
2PC945Q
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PDF
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Untitled
Abstract: No abstract text available
Text: CERLED Ceramic Chip SMD SMD - Wide-Viewing Angle CR 10 TE Photo Transistor Description The solder pads provide an excellent heat sink. For multi-sensors just choose 2 or more CERLEDs. Clear epoxy lens. Special Type CR10TE-DLF with daylight filter on request.
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Original
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CR10TE-DLF)
DTS1005
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PDF
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Untitled
Abstract: No abstract text available
Text: CERLED Ceramic Chip SMD SMD - Wide-Viewing Angle CR 50 TE Photo Transistor Description The solder pads provide an excellent heat sink. For multi-sensors just choose 2 or more CERLEDs. Clear epoxy lens. Special Type CR50TE-DLF with daylight filter on request.
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Original
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CR50TE-DLF)
DTS1005
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PDF
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DTS1005
Abstract: No abstract text available
Text: D A T A S H E E T CERLED Ceramic Chip SMD SMD – Wide-Viewing Angle CR 10 TE Photo Transistor Description The solder pads provide an excellent heat sink. For multi-sensors just choose 2 or more CERLEDs. Clear epoxy lens. Special Type CR10TE-DLF with daylight
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Original
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CR10TE-DLF)
DTS1005
DTS1005
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PDF
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SMD TRANSISTOR MARKING BR
Abstract: 2SC5209 marking RH
Text: Transistors SMD Type Small Signal Transistor 2SC5209 Features High voltage VCEO=50V. Small package for mounting. High hFE = 600 to 1800. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 50 V Emitter-base voltage VEBO
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Original
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2SC5209
100mA
500mA
-10mA
SMD TRANSISTOR MARKING BR
2SC5209
marking RH
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PDF
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V9040Z
Abstract: PBHV9040Z PBHV8540Z SC-73 MARKING SMD IC CODE 10 pin
Text: PBHV9040Z 500 V, 0.25 A PNP high-voltage low VCEsat BISS transistor Rev. 02 — 15 January 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.
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Original
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PBHV9040Z
OT223
SC-73)
PBHV8540Z.
AEC-Q101
PBHV9040Z
V9040Z
PBHV8540Z
SC-73
MARKING SMD IC CODE 10 pin
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PDF
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PBHV8540T
Abstract: PBHV9040T MARKING CODE SMD IC
Text: PBHV9040T 500 V, 0.25 A PNP high-voltage low VCEsat BISS transistor Rev. 02 — 15 January 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
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Original
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PBHV9040T
O-236AB)
PBHV8540T.
AEC-Q101
PBHV9040T
PBHV8540T
MARKING CODE SMD IC
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PDF
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Untitled
Abstract: No abstract text available
Text: D A T A S H E E T CERLED Ceramic Chip SMD SMD – Wide-Viewing Angle CR 50 TE Photo Transistor Description The solder pads provide an excellent heat sink. For multi-sensors just choose 2 or more CERLEDs. Clear epoxy lens. Special Type CR50TE-DLF with daylight
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Original
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CR50TE-DLF)
DTS1005
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PDF
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Untitled
Abstract: No abstract text available
Text: SO T8 9 PBHV9040X 500 V, 0.25 A PNP high-voltage low VCEsat BISS transistor 9 December 2013 Product data sheet 1. General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package.
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Original
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PBHV9040X
SC-62)
PBHV8540X.
AEC-Q101
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PDF
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CR50TE-DLF
Abstract: DTS1005 transistor smd cr CR50TE
Text: D A T A S H E E T CERLED Ceramic Chip SMD SMD – Wide-Viewing Angle CR 50 TE Photo Transistor Description The solder pads provide an excellent heat sink. For multi-sensors just choose 2 or more CERLEDs. Clear epoxy lens. Special Type CR50TE-DLF with daylight
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Original
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CR50TE-DLF)
DTS1005
CR50TE-DLF
DTS1005
transistor smd cr
CR50TE
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PDF
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MARKING 1R
Abstract: FMMT5089
Text: Transistors IC SMD Type Small Signal Transistor FMMT5089 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Small signal transistor. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base
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Original
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FMMT5089
OT-23
500mA,
20MHz
200mA,
15KHz
MARKING 1R
FMMT5089
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PDF
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transistors marking HJ
Abstract: SMD BR 17 smd transistor marking hg smd transistor 1800 HG marking smd transistor 2sc3439 2SC3439 marking H-G hFE CLASSIFICATION Marking markING HG
Text: Transistors SMD Type Small Signal Transistor 2SC3439 Features High hFE=400 to 1800. High collector current Icm=3A,Ic=1.5A High collector dissipation Pc=500mW Low VCE(sat) VCE(sat)=0.2V typ(@Ic=1a,IB=20mA) Small package for mounting. Absolute Maximum Ratings Ta = 25
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Original
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2SC3439
500mW
500mA
-10mA
transistors marking HJ
SMD BR 17
smd transistor marking hg
smd transistor 1800
HG marking
smd transistor 2sc3439
2SC3439
marking H-G
hFE CLASSIFICATION Marking
markING HG
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PDF
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SMD Transistor Y34
Abstract: Y33 SMD TRANSISTOR SMD Transistor Y33 marking Y33 pnp smd y34 smd marking y33 2SA1462 marking y34
Text: Transistors IC SMD Type PNP Silicon Epitaxia Transistor 2SA1462 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 High speed,high voltage switching. High ft:fT=1800MHz TYP. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01
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Original
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2SA1462
OT-23
1800MHz
-10mA
SMD Transistor Y34
Y33 SMD TRANSISTOR
SMD Transistor Y33
marking Y33
pnp smd y34
smd marking y33
2SA1462
marking y34
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PDF
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BFS17
Abstract: BFS17R BFS17W BFS17 E1
Text: BFS17/BFS17R/BFS17W Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280
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Original
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BFS17/BFS17R/BFS17W
BFS17
BFS17R
BFS17W
D-74025
20-Jan-99
BFS17 E1
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PDF
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BFS17
Abstract: bfs17 Vishay BFS17R BFS17W 702 TRANSISTOR sot-23 85038
Text: BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2
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Original
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BFS17/BFS17R/BFS17W
BFS17
BFS17R
BFS17W
20-Jan-99
D-74025
bfs17 Vishay
702 TRANSISTOR sot-23
85038
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PDF
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BJW transistor
Abstract: SMD transistor MARKING bjw marking bjw MARKING BJV transistor bjv TRANSISTOR bjw 2SD2351 hFE CLASSIFICATION Marking
Text: Transistors IC SMD Type General Purpose Transistor 2SD2351 Features High DC current gain. High emitter-base voltage. VCBO=12V Low saturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA) 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol
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Original
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2SD2351
50mA/5mA)
100ms.
50mA/5mA
-10mA,
100MHz
BJW transistor
SMD transistor MARKING bjw
marking bjw
MARKING BJV
transistor bjv
TRANSISTOR bjw
2SD2351
hFE CLASSIFICATION Marking
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PDF
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Untitled
Abstract: No abstract text available
Text: SO T8 83 PMZ350UPE 20 V, P-channel Trench MOSFET 14 May 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench
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Original
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PMZ350UPE
DFN1006-3
OT883)
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PDF
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smd transistor JJ
Abstract: t8 smd transistor smd NE mbc1B transistor 75 U50 BLT14
Text: Philips Semiconductors Preliminary specification UHF power transistor BLT14 FEATURES DESCRIPTION • High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic SOT96-1 S08 SMD package. • High gain • Internal pre-matched input.
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OCR Scan
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BLT14
OT96-1
MAM227
711062b
OT96-1.
smd transistor JJ
t8 smd transistor
smd NE
mbc1B
transistor 75 U50
BLT14
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PDF
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R Y SMD TRANSISTOR
Abstract: 2L smd transistor AT 11-S-i smd transistor 2T SOT96-1 BLT13 D102 smd transistor nc 61 NCR100
Text: Preliminary specification Philips Semiconductors UHF power transistor BLT13 FEATURES DESCRIPTION • High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic SOT96-1 S08 SMD package. • High gain • Internal pre-matched input.
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OCR Scan
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BLT13
OT96-1
MAM227
OT96-1.
R Y SMD TRANSISTOR
2L smd transistor
AT 11-S-i
smd transistor 2T
SOT96-1
BLT13
D102
smd transistor nc 61
NCR100
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PDF
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t8 smd transistor
Abstract: 552 smd transistor smd transistor w J 3 58 transistor 75 U50 8x 8 smd transistor BLT14 MBC180 transistor t8
Text: Philips Semiconductors Preliminary specification UHF power transistor BLT14 FEATURES DESCRIPTION • High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic SOT96-1 S08 SMD package. • High gain • Internal pre-matched input.
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OCR Scan
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BLT14
OT96-1
MAM227
711002b
MBC180-1
OT96-1.
711DflBb
t8 smd transistor
552 smd transistor
smd transistor w J 3 58
transistor 75 U50
8x 8 smd transistor
BLT14
MBC180
transistor t8
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PDF
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TRANSISTOR BC 448 smd
Abstract: JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A
Text: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page 38 41 44 44 45 46 47 48 48 48 General purpose amplification and switching transistors Low-power transistors 17 Transistor arrays 22 Medium-power transistors 23 24 Power transistors
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OCR Scan
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BRY61
BRY62
OT143B
TRANSISTOR BC 448 smd
JA101P
smd transistor npn 491
transistor TO-92 bc108
transistor pn2222
BC853B
transistor MPSA77
jc5010 215
BC307 smd
2PB601A
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PDF
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Untitled
Abstract: No abstract text available
Text: wmmt BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package 1 BFS17 Marking: E1
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OCR Scan
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BFS17/BFS17R/BFS17W
BFS17
BFS17R
BFS17W
20-Jan-99
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PDF
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