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    SMD TRANSISTOR AR 6 Search Results

    SMD TRANSISTOR AR 6 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    SMD TRANSISTOR AR 6 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    EL series SMD transistor

    Abstract: 6R299P ipl60R299cp mosfet 600v JESD22 ipl60r IPL60 6r299
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R299CP Data Sheet Rev. 1.0, 2010-04-30 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ CP Power Transistor 1 IPL60R299CP Description


    Original     		IPL60R299CP 150mm² EL series SMD transistor 6R299P ipl60R299cp mosfet 600v JESD22 ipl60r IPL60 6r299 PDF

    6r385P

    Abstract: IPL60R385CP JESD22 EL series small size SMD transistor infineon msl
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R385CP Data Sheet Rev. 1.0, 2010-04-30 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ CP Power Transistor 1 IPL60R385CP Description


    Original     		IPL60R385CP 150mm² 6r385P IPL60R385CP JESD22 EL series small size SMD transistor infineon msl PDF

    6R199P

    Abstract: mosfet 6R199 ipl60r199cp 6R199P DATA SHEET smd transistor AR 6 JESD22 EL series small size SMD transistor 6R19 IPL60R199
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R199CP Data Sheet Rev. 1.0, 2010-04-30 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ CP Power Transistor 1 IPL60R199CP Description


    Original     		IPL60R199CP 150mm² 6R199P mosfet 6R199 ipl60r199cp 6R199P DATA SHEET smd transistor AR 6 JESD22 EL series small size SMD transistor 6R19 IPL60R199 PDF

    06N60C3

    Abstract: DF marking code smd transistor 06N60 smd transistor marking G12 SMD TRANSISTOR MARKING code DD transistor smd marking ds SMD Diode V6 marking code SMD Transistor g12 T R TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE df
    Text: SPP06N60C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.75 Ω ID 6.2 A • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances


    Original     		SPP06N60C3 PG-TO220-3-1 Q67040-S4629 06N60C3 06N60C3 DF marking code smd transistor 06N60 smd transistor marking G12 SMD TRANSISTOR MARKING code DD transistor smd marking ds SMD Diode V6 marking code SMD Transistor g12 T R TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE df PDF

    06N60

    Abstract: Q67040-S4629 SPP06N60C3 06N60C3 smd transistor marking G12
    Text: SPP06N60C3 CoolMOS TM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.75 Ω ID 6.2 A • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances


    Original     		SPP06N60C3 PG-TO220 Q67040-S4629 06N60C3 06N60 Q67040-S4629 SPP06N60C3 06N60C3 smd transistor marking G12 PDF

    smd marking F62

    Abstract: 06N60C3 D31 SMD MARKING
    Text: SPP06N60C3 CoolMOS TM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.75 Ω ID 6.2 A • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances


    Original     		SPP06N60C3 PG-TO220 Q67040-S4629 06N60C3 smd marking F62 06N60C3 D31 SMD MARKING PDF

    06N60

    Abstract: SPD06N60C3 SMD TRANSISTOR MARKING code DD infineon marking TO-252 06N60C3 Q67040-S4630 TRANSISTOR SMD MARKING CODE G12
    Text: SPD06N60C3 CoolMOS TM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.75 Ω ID 6.2 A • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances


    Original     		SPD06N60C3 PG-TO252 Q67040-S4630 06N60C3 06N60 SPD06N60C3 SMD TRANSISTOR MARKING code DD infineon marking TO-252 06N60C3 Q67040-S4630 TRANSISTOR SMD MARKING CODE G12 PDF

    d39 marking

    Abstract: 1620R
    Text: SPP06N60C3 CoolMOS TM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.75 Ω ID 6.2 A • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances


    Original     		SPP06N60C3 PG-TO220-3-1 Q67040-S4629 06N60C3 d39 marking 1620R PDF

    smd marking F62

    Abstract: 06N60 smd transistor marking G12
    Text: SPD06N60C3 CoolMOS TM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.75 Ω ID 6.2 A • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances


    Original     		SPD06N60C3 PG-TO252-3-1 Q67040-S4630 06N60C3 smd marking F62 06N60 smd transistor marking G12 PDF

    06N60C3

    Abstract: Q67040-S4630 SPD06N60C3 smd transistor marking G12 TRANSISTOR SMD MARKING CODE G12
    Text: SPD06N60C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.75 Ω ID 6.2 A • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances


    Original     		SPD06N60C3 P-TO252-3-1 Q67040-S4630 06N60C3 06N60C3 Q67040-S4630 SPD06N60C3 smd transistor marking G12 TRANSISTOR SMD MARKING CODE G12 PDF

    06n60

    Abstract: smd transistor marking G12 06N60C3 06n60c Q67040-S4629 SPP06N60C3 DF marking code smd transistor
    Text: SPP06N60C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.75 Ω ID 6.2 A • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances


    Original     		SPP06N60C3 P-TO220-3-1 Q67040-S4629 06N60C3 06n60 smd transistor marking G12 06N60C3 06n60c Q67040-S4629 SPP06N60C3 DF marking code smd transistor PDF

    smd transistor AR

    Abstract: 2PD1820AR TRANSISTOR SMD MARKING AS 2PD1820AS 2PD1820A 2PD1820AQ
    Text: Transistors IC SMD Type NPN General Purpose Transistor 2PD1820A Features High current max. 500 mA . Low voltage (max. 50 V). Low collector-emitter saturation voltage (max. 600 mV). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol


    Original     		2PD1820A 2PD1820AQ 2PD1820AR 2PD1820AS smd transistor AR 2PD1820AR TRANSISTOR SMD MARKING AS 2PD1820AS 2PD1820A 2PD1820AQ PDF

    Untitled

    Abstract: No abstract text available
    Text: SPN02N60C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 2.5 Ω ID 0.4 A • Ultra low effective capacitances • Extreme dv /dt rated SOT223 Type


    Original     		SPN02N60C3 OT223 Q67040-S4553 02N60C3 PDF

    SMD Transistor g25

    Abstract: g25 SMD Transistor SP*02N60 02N60C3 SPN02N60C3 DF marking code smd transistor 02n60
    Text: SPN02N60C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 2.5 Ω ID 0.4 A • Ultra low effective capacitances • Extreme dv /dt rated SOT223 Type


    Original     		SPN02N60C3 OT223 Q67040-S4553 02N60C3 SMD Transistor g25 g25 SMD Transistor SP*02N60 02N60C3 SPN02N60C3 DF marking code smd transistor 02n60 PDF

    65E6190

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS ThinkPAK8x8 650VCoolMOS™E6PowerTransistor IPL65R190E6 DataSheet Rev.2.0 Final Industrial&Multimarket 650VCoolMOS™E6PowerTransistor IPL65R190E6 1Description ThinPAK8x8


    Original     		IPL65R190E6 65E6190 PDF

    6r385P

    Abstract: IPD60R385CP 6R38 6r385 6r385p infineon JESD22 SP000062533 INFINEON transistor marking
    Text: IPD60R385CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Worldwide best R ds,on in TO252 650 0.385 Ω R DS on ,max • Ultra low gate charge V Q g,typ 17 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPD60R385CP PG-TO252 SP000062533 6R385P 6r385P IPD60R385CP 6R38 6r385 6r385p infineon JESD22 SP000062533 INFINEON transistor marking PDF

    6R165P

    Abstract: 6R165 IPP60R165CP smd transistor marking F12 IPB60R165CP JESD22 SP000096439 SMD TRANSISTOR MARKING code DD Infineon 6R165P IPP60R165
    Text: IPB60R165CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.165 Ω R DS on ,max • Ultra low gate charge V Q g,typ 39 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPB60R165CP PG-TO263 IPP60R165CP SP000096439 6R165P 6R165P 6R165 IPP60R165CP smd transistor marking F12 IPB60R165CP JESD22 SP000096439 SMD TRANSISTOR MARKING code DD Infineon 6R165P IPP60R165 PDF

    6R199P

    Abstract: 6R199 6R199P DATA SHEET IPB60R199 mosfet 6R199 smd marking code cp IPB60R199CP SMD MARKING CODE 102 JESD22 SP000223256
    Text: IPB60R199CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPB60R199CP PG-TO263 SP000223256 6R199P 6R199P 6R199 6R199P DATA SHEET IPB60R199 mosfet 6R199 smd marking code cp IPB60R199CP SMD MARKING CODE 102 JESD22 SP000223256 PDF

    6R199P

    Abstract: IPB60R199CP 6R199 6R199P mosfet mosfet 6R199 SP000223256 marking code ff p SMD Transistor JESD22 marking code ff SMD Transistor MOSFET TRANSISTOR SMD MARKING CODE 7
    Text: IPB60R199CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPB60R199CP PG-TO263 SP000223256 6R199P 6R199P IPB60R199CP 6R199 6R199P mosfet mosfet 6R199 SP000223256 marking code ff p SMD Transistor JESD22 marking code ff SMD Transistor MOSFET TRANSISTOR SMD MARKING CODE 7 PDF

    IPB60R165CP

    Abstract: 6R165P f12 SMD TRANSISTOR transistor SMD f12 JESD22 SP000096439 smd transistor marking F12 marking code ff p SMD Transistor 6R165 SMD TRANSISTOR MARKING code DD
    Text: IPB60R165CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.165 Ω R DS on ,max • Ultra low gate charge V 39 Q g,typ nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPB60R165CP PG-TO263 SP000096439 6R165P IPB60R165CP 6R165P f12 SMD TRANSISTOR transistor SMD f12 JESD22 SP000096439 smd transistor marking F12 marking code ff p SMD Transistor 6R165 SMD TRANSISTOR MARKING code DD PDF

    6R099

    Abstract: IPB60R099CP smd marking code cp smd code F18 CoolMOS Power Transistor SMD MARKING CODE 102 TRANSISTOR SMD MARKING CODE ag JESD22 SP000088490 MOSFET SMD MARKING CODE
    Text: IPB60R099CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Worldwide best R ds,on in TO263 R DS on ,max • Ultra low gate charge 650 V 0.099 Ω 60 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPB60R099CP PG-TO263 SP000088490 6R099 6R099 IPB60R099CP smd marking code cp smd code F18 CoolMOS Power Transistor SMD MARKING CODE 102 TRANSISTOR SMD MARKING CODE ag JESD22 SP000088490 MOSFET SMD MARKING CODE PDF

    6R099

    Abstract: IPB60R099CS smd code F18 infineon 6r099 PG-TO263-3-2 PG-TO-263-3-2 DF marking code smd transistor MOSFET MARKING CODE 7V
    Text: IPB60R099CS CoolMOSTM Power Transistor Product Summary Features V DS • Worldwide best R ds,on in TO263 R DS on ,max • Ultra low gate charge Q g,typ 600 V 0.099 Ω 60 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPB60R099CS PG-TO263-3-2 SP000088490 6R099 6R099 IPB60R099CS smd code F18 infineon 6r099 PG-TO263-3-2 PG-TO-263-3-2 DF marking code smd transistor MOSFET MARKING CODE 7V PDF

    6r165p

    Abstract: Infineon 6R165P
    Text: IPB60R165CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.165 Ω R DS on ,max • Ultra low gate charge V 39 Q g,typ nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPB60R165CP PG-TO263 SP000096439 6R165P 6r165p Infineon 6R165P PDF

    6r385p infineon

    Abstract: 6r385P IPD60R385CP 6r385 transistor 6R385P transistor smd marking ds
    Text: IPD60R385CP CoolMOSTM Power Transistor Product Summary Features V DS • Worldwide best R ds,on in TO252 R DS on ,max • Ultra low gate charge Q g,typ 600 V 0.385 Ω 17 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPD60R385CP PG-TO252-3 SP000062533 6R385P 6r385p infineon 6r385P IPD60R385CP 6r385 transistor 6R385P transistor smd marking ds PDF