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    SMD TRANSISTOR P3D Search Results

    SMD TRANSISTOR P3D Result Highlights (5)

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    BLM15PX121BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 120ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX181SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 180ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE802SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 8000ohm NONAUTO Visit Murata Manufacturing Co Ltd
    BLM15PX330BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX600SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 60ohm POWRTRN Visit Murata Manufacturing Co Ltd

    SMD TRANSISTOR P3D Datasheets Context Search

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    transistor SMD p90

    Abstract: transistor 431 smd T1G6001528-Q3 smd transistor 901 100A150JW500XC EAR99 RO3203 S2834 431 TRANSISTOR smd
    Text: T1G6001528-Q3 DC – 6 GHz 18 W GaN RF Power Transistor Applications • • • • • • • General Purpose RF Power Jammers Military and Civilian Radar Professional and Military radio systems Wideband amplifiers Test instrumentation Avionics Product Features


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    T1G6001528-Q3 T1G6001528-Q3 transistor SMD p90 transistor 431 smd smd transistor 901 100A150JW500XC EAR99 RO3203 S2834 431 TRANSISTOR smd PDF

    transistor w 431

    Abstract: transistor 431 smd TIC 122 Transistor transistor SE 431 w 431 transistor transistor je 123 6 pin TRANSISTOR SMD CODE tm transistor+431+smd
    Text: T1G6001528-Q3 DC – 6 GHz 18 W GaN RF Power Transistor Applications • • • • • • • General Purpose RF Power Jammers Military and Civilian Radar Professional and Military radio systems Wideband amplifiers Test instrumentation Avionics Product Features


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    T1G6001528-Q3 T1G6001528-Q3 transistor w 431 transistor 431 smd TIC 122 Transistor transistor SE 431 w 431 transistor transistor je 123 6 pin TRANSISTOR SMD CODE tm transistor+431+smd PDF

    PD20010

    Abstract: PD20010-E AN1294 J-STD-020B
    Text: PD20010-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 10 W with 11 dB gain @ 2 GHz / 13.6 V ■ Plastic package ■ ESD protection


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    PD20010-E 2002/95/EC PowerSO-10RF PD20010-E PD20010 AN1294 J-STD-020B PDF

    NV SMD TRANSISTOR

    Abstract: AN1294 UHF rfid reader ma706
    Text: PD84006-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz ■ Plastic package ■


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    PD84006-E 2002/95/EC PowerSO-10RF PD84006-E NV SMD TRANSISTOR AN1294 UHF rfid reader ma706 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD84006-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Datasheet −production data Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz


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    PD84006-E 2002/95/EC PowerSO-10RF PD84006-E PDF

    PD20010-E

    Abstract: PD20010
    Text: PD20010-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Datasheet — production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 10 W with 11 dB gain @ 2 GHz / 13.6 V ■ Plastic package


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    PD20010-E 2002/95/EC PowerSO-10RF PD20010-E PD20010 PDF

    PD85015-E

    Abstract: PD85015 PD85015s-e AN1294 JESD97 J-STD-020B PowerSO-10RF
    Text: PD85015-E PD85015S-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Target Specification Features • Excellent thermal stability ■ Common source configuration ■ POUT = 15 W with 16 dB gain @ 870 MHz / 13.6 V ■


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    PD85015-E PD85015S-E 2002/95/EC PowerSO-10RF PD85015-E PD85015 PD85015s-e AN1294 JESD97 J-STD-020B PowerSO-10RF PDF

    PD85015s-e

    Abstract: PD85015 AN1294 PD85015-E
    Text: PD85015-E PD85015S-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 15 W with 16 dB gain @ 870 MHz / 13.6 V ■ Plastic package ■ ESD protection


    Original
    PD85015-E PD85015S-E 2002/95/EC PowerSO-10RF PD85015-E PD85015s-e PD85015 AN1294 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD85015-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Datasheet −production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 15 W with 16 dB gain @ 870 MHz / 13.6 V ■ Plastic package


    Original
    PD85015-E 2002/95/EC PowerSO-10RF PD85015-E PDF

    Untitled

    Abstract: No abstract text available
    Text: PD85015-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 15 W with 16 dB gain @ 870 MHz / 13.6 V ■ Plastic package ■ ESD protection


    Original
    PD85015-E 2002/95/EC PowerSO-10RF PD85015-E PDF

    PD84010-E

    Abstract: AN1294 JESD97 J-STD-020B
    Text: PD84010-E PD84010S-E RF power transistor, LDMOST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 10W with 14.3dB gain @ 870MHz / 7.5V ■ Plastic package ■ ESD protection


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    PD84010-E PD84010S-E 870MHz 2002/95/EC PowerSO-10RF PD84010-E AN1294 JESD97 J-STD-020B PDF

    Untitled

    Abstract: No abstract text available
    Text: PD20015-E RF power transistor, LdmoST family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V ■ Plastic package ■ ESD protection ■ In compliance with the 2002/95/EC european


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    PD20015-E 2002/95/EC PowerSO-10RF PD20015-E PDF

    AN1294

    Abstract: JESD97 J-STD-020B PD20015-E
    Text: PD20015-E PD20015S-E RF power transistor - LdmoST family Preliminary Data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V ■ Plastic package ■ ESD protection ■ In compliance with the 2002/95/EC european


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    PD20015-E PD20015S-E 2002/95/EC PowerSO-10RF PD20015-E AN1294 JESD97 J-STD-020B PDF

    PD20015-E

    Abstract: PD-20015
    Text: PD20015-E RF power transistor, LdmoST family N-channel enhancement-mode lateral MOSFETs Datasheet — production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V ■ Plastic package


    Original
    PD20015-E 2002/95/EC PowerSO-10RF PD20015-E PD-20015 PDF

    NV SMD TRANSISTOR

    Abstract: PD85035-E PD85035 PD85035S PD85035S-E AN1294 JESD97 J-STD-020B PD85035STR-E PD85035TR-E
    Text: PD85035-E PD85035S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Target Specification Features • Excellent thermal stability ■ Common source configuration ■ POUT = 35W with 14.9dB gain @ 870MHz / 13.6V ■ Plastic package


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    PD85035-E PD85035S-E 870MHz 2002/93/EC PowerSO-10RF PD85035-E NV SMD TRANSISTOR PD85035 PD85035S PD85035S-E AN1294 JESD97 J-STD-020B PD85035STR-E PD85035TR-E PDF

    Untitled

    Abstract: No abstract text available
    Text: PD84010-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Datasheet — production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 10 W with 14.3 dB gain @ 870 MHz / 7.5 V ■ Plastic package


    Original
    PD84010-E 2002/95/EC PowerSO-10RF PD84010-E PDF

    Untitled

    Abstract: No abstract text available
    Text: PD85035-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 35 W with 14.9 dB gain @ 870 MHz / 13.6 V ■ Plastic package ■ ESD protection


    Original
    PD85035-E 2002/95/EC1 PowerSO-10RF PD85035-E PDF

    Untitled

    Abstract: No abstract text available
    Text: PD85025-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 25 W with 15.7 dB gain @ 870 MHz / 13.6 V ■ Plastic package ■ ESD protection


    Original
    PD85025-E 2002/95/EC PowerSO-10RF PD85025-E PDF

    Untitled

    Abstract: No abstract text available
    Text: PD85025-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 25 W with 15.7 dB gain @ 870 MHz / 13.6 V ■ Plastic package ■ ESD protection


    Original
    PD85025-E 2002/95/EC PowerSO-10RF PD85025-E PDF

    PD85035S-E

    Abstract: PD85035 transistor SMD 12W PD85035-E PD85035S AN1294 JESD97 J-STD-020B PD85035STR-E PD85035TR-E
    Text: PD85035-E PD85035S-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 35 W with 14.9 dB gain @ 870 MHz / 13.6 V ■ Plastic package ■


    Original
    PD85035-E PD85035S-E 2002/95/EC1 PowerSO-10RF PD85035-E PD85035S-E PD85035 transistor SMD 12W PD85035S AN1294 JESD97 J-STD-020B PD85035STR-E PD85035TR-E PDF

    PD85025s-e

    Abstract: PD85025 AN1294 JESD97 J-STD-020B PD85025-E
    Text: PD85025-E PD85025S-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 25 W with 15.7 dB gain @ 870 MHz / 13.6 V ■ Plastic package ■


    Original
    PD85025-E PD85025S-E 2002/95/EC PowerSO-10RF PD85025-E PD85025s-e PD85025 AN1294 JESD97 J-STD-020B PDF

    PD85025s-e

    Abstract: NV SMD TRANSISTOR PD85025 PD85025S AN1294 JESD97 J-STD-020B PD85025-E
    Text: PD85025-E PD85025S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Target Specification Features • Excellent thermal stability ■ Common source configuration ■ POUT = 25W with 15.7dB gain @ 870MHz / 13.6V ■ Plastic package


    Original
    PD85025-E PD85025S-E 870MHz 2002/93/EC PowerSO-10RF PD85025-E PD85025s-e NV SMD TRANSISTOR PD85025 PD85025S AN1294 JESD97 J-STD-020B PDF

    AN1294

    Abstract: J-STD-020B PD85035-E PD85035S-E PD85035STR-E PD85035TR-E PD85035
    Text: PD85035-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 35 W with 14.9 dB gain @ 870 MHz / 13.6 V ■ Plastic package ■ ESD protection


    Original
    PD85035-E 2002/95/EC1 PowerSO-10RF PD85035-E AN1294 J-STD-020B PD85035S-E PD85035STR-E PD85035TR-E PD85035 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD84010-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 10 W with 14.3 dB gain @ 870 MHz / 7.5 V ■ Plastic package ■ ESD protection


    Original
    PD84010-E 2002/95/EC PowerSO-10RF PD84010-E PDF