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    SMD U1 TRANSISTOR Search Results

    SMD U1 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX121BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 120ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX181SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 180ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE802SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 8000ohm NONAUTO Visit Murata Manufacturing Co Ltd
    BLM15PX330BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX600SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 60ohm POWRTRN Visit Murata Manufacturing Co Ltd

    SMD U1 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BCX19

    Abstract: BCX20
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCX19 BCX20 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BCX19 = U1 BCX20 = U2 Pin configuration 1 = BASE 2 = EMITTER


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    OT-23 BCX19 BCX20 BCX20 C-120 BCX19 PDF

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCX19 BCX20 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BCX19 = U1 BCX20 = U2 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm


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    OT-23 BCX19 BCX20 C-120 PDF

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCX19 BCX20 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transisto rs Marking BCX19 = U1 BCX20 = U2 Pin configuration 1 = BASE 2 = EMITTER


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    OT-23 BCX19 BCX20 C-120 PDF

    BCX19

    Abstract: BCX20
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BCX19 BCX20 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BCX19 = U1


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    OT-23 BCX19 BCX20 C-120 BCX19 BCX20 PDF

    BCX19

    Abstract: BCX20
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BCX19 BCX20 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BCX19 = U1 BCX20 = U2 PACKAGE OUTLINE DETAILS


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    OT-23 BCX19 BCX20 C-120 BCX19 BCX20 PDF

    Led driver schematic

    Abstract: AN2259 1w led driver 12vdc 350ma led driver circuit L5973D L5973d application note smd transistor equivalent table BRIDGE RECTIFIER SMD SMD TRANSISTOR D2 L5973D equivalent
    Text: AN2259 APPLICATION NOTE High intensity LED driver using the L5970D/L5973D Introduction High brightness LEDs are becoming a prominent source of light and often have better efficiency and reliability than conventional light sources. While LEDs can operate from an energy source


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    AN2259 L5970D/L5973D Led driver schematic AN2259 1w led driver 12vdc 350ma led driver circuit L5973D L5973d application note smd transistor equivalent table BRIDGE RECTIFIER SMD SMD TRANSISTOR D2 L5973D equivalent PDF

    transformer egston

    Abstract: 702 TRANSISTOR smd AM003536 Egston V7142A smd schottky diode 702 universal input voltage power supply v7142 702 transistor smd code etd29 14 pin vertical
    Text: AN2844 Application note 15 W wide range SMPS for metering based on ESBT STC03DE220HV and L6565 PWM controller 1 Introduction This document describes a 15-W flyback switched mode power supply SMPS application that uses an emitter-switched bipolar transistor (ESBT™) switch (STC03DE220HV) and


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    AN2844 STC03DE220HV L6565 STC03DE220HV) STEVAL-ISA057V1 transformer egston 702 TRANSISTOR smd AM003536 Egston V7142A smd schottky diode 702 universal input voltage power supply v7142 702 transistor smd code etd29 14 pin vertical PDF

    transistor l7805cv

    Abstract: in4148 smd diode l7805cv transistor ots-16-03 8B TRANSISTOR SMD smd transistor A1 smd diode code A2 SMD BERG header 805 smd code capacitor datasheet L7805CV
    Text: Date: 4-May-07 PCB reference: STEVAL-IFS003V1 Date: March, 20 2006 Company: S Contact person: Nishant Omar E-mail: nishant.omar@st.com Phone:+91 0120 4003603 Reference 1 ST7 - MCU 1 NAND-Flash 1 Voltage Regulator 1 Real Time Clock 1 MOSFET 1 Diode 1 npn Transistor


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    4-May-07 STEVAL-IFS003V1 ST7F651AR6T1 NAND512W3A L7805 M41T81S STB100NF IN4148 2STR1215 TQFP64 transistor l7805cv in4148 smd diode l7805cv transistor ots-16-03 8B TRANSISTOR SMD smd transistor A1 smd diode code A2 SMD BERG header 805 smd code capacitor datasheet L7805CV PDF

    transistor 9575

    Abstract: BLF6G10-160RN BLF6G10LS-160RN RF35 w2 smd transistor smd transistor f3 65 CAPACITOR 330 NF Capacitor 27 p-F 1
    Text: BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 01 — 20 January 2009 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance


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    BLF6G10-160RN; BLF6G10LS-160RN BLF6G10-160RN 10LS-160RN transistor 9575 BLF6G10LS-160RN RF35 w2 smd transistor smd transistor f3 65 CAPACITOR 330 NF Capacitor 27 p-F 1 PDF

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    Abstract: No abstract text available
    Text: BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance


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    BLF6G10-160RN; BLF6G10LS-160RN BLF6G10-160RN 10LS-160RN PDF

    BLF6G10LS-160RN

    Abstract: TRANSISTOR SMD BV BLF6G10-160RN RF35 nxp TRANSISTOR SMD 13
    Text: BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance


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    BLF6G10-160RN; BLF6G10LS-160RN BLF6G10-160RN 10LS-160RN BLF6G10LS-160RN TRANSISTOR SMD BV RF35 nxp TRANSISTOR SMD 13 PDF

    thermistor 100k

    Abstract: 0402CG101J9B200 600S0R3BT250XT 600S1R5BT250XT transistor smd 303 transistor SMD DK PANASONIC ECR SMD TRANSISTOR R90 SLD1026Z SLD1026Z-EVAL-E
    Text: Design Application Note AN-090 2 x SLD-1026Z LDMOS Application Circuits Abstract Bias Discussion Sirenza Microdevices' SLD-1026Z is a high performance LDMOS transistor designed for operation up to 2.7 GHz. This application note demonstrates balanced configuration application circuits operating in the 800,


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    AN-090 SLD-1026Z EAN-105860 thermistor 100k 0402CG101J9B200 600S0R3BT250XT 600S1R5BT250XT transistor smd 303 transistor SMD DK PANASONIC ECR SMD TRANSISTOR R90 SLD1026Z SLD1026Z-EVAL-E PDF

    202319A

    Abstract: No abstract text available
    Text: EVALUATION BOARD DATA SHEET EV183 Evaluation Board for the AAT2822/2823/2824/2825 TFT-LCD DC-DC Converter with WLED Driver and VCOM Buffer Introduction The AAT282x family AAT2822, AAT2823, AAT2824, AAT2825 of integrated panel power solutions provides the regulated voltages required by an active-matrix thin-film transistor (TFT) liquid-crystal display (LCD). The AAT282x family


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    EV183 AAT2822/2823/2824/2825 AAT282x AAT2822, AAT2823, AAT2824, AAT2825) AAT282x-1 202319A PDF

    transistor K 1352

    Abstract: C5750X7R1H106M TRANSISTOR K 135 VJ1206Y104KXB 30RF35 BLF6G27-135 BLF6G27LS-135 C4532X7R1H475M RF35 722 smd transistor
    Text: BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Rev. 02 — 26 May 2008 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance


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    BLF6G27-135; BLF6G27LS-135 ACPR885k ACPR1980k IS-95 BLF6G27-135 BLF6G27LS-135 transistor K 1352 C5750X7R1H106M TRANSISTOR K 135 VJ1206Y104KXB 30RF35 C4532X7R1H475M RF35 722 smd transistor PDF

    TRANSISTOR j412

    Abstract: J412 - TRANSISTOR SMD BLF6G38S-25
    Text: BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 01 — 18 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1.


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    BLF6G38-25; BLF6G38S-25 ACPR885k ACPR1980k IS-95 BLF6G38-25 BLF6G38S-25 TRANSISTOR j412 J412 - TRANSISTOR SMD PDF

    1n4148 smd diode

    Abstract: diode 1N4148 SMD ZENER DIODE 5.1V smd BZX84-5V1 ac-dc 18V Charger Application Note AC-DC battery charger constant AN1600 schematic diagram ac-dc inverter SMD ic catalogue 0432A
    Text: Order this document by AN1600/D Motorola Semiconductor Application Note AN1600 AC-DC battery charger constant current with voltage limit using the MC33364 and the MC33341 By Petr Lidak Application Engineer Industrial System Application Laboratory Motorola, Roznov p/R, Czech Republic


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    AN1600/D AN1600 MC33364 MC33341 MC33341 MC33364, 1n4148 smd diode diode 1N4148 SMD ZENER DIODE 5.1V smd BZX84-5V1 ac-dc 18V Charger Application Note AC-DC battery charger constant AN1600 schematic diagram ac-dc inverter SMD ic catalogue 0432A PDF

    smd transistor 3400

    Abstract: smd transistor equivalent table J412 - TRANSISTOR SMD BLF6G38S-25 C5750X7R1H106M cdma QPSK modulation Walsh pilot BLF6G38-25 C4532X7R1H475M RF35 722 smd transistor
    Text: BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 02 — 23 December 2008 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance


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    BLF6G38-25; BLF6G38S-25 ACPR885k ACPR1980k IS-95 BLF6G38-25 BLF6G38S-25 smd transistor 3400 smd transistor equivalent table J412 - TRANSISTOR SMD C5750X7R1H106M cdma QPSK modulation Walsh pilot C4532X7R1H475M RF35 722 smd transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev. 4 — 23 September 2013 Product data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz.


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    BLS7G2729L-350P; BLS7G2729LS-350P BLS7G2729L-350P LS-350P PDF

    Untitled

    Abstract: No abstract text available
    Text: BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev. 3 — 12 July 2013 Objective data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz.


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    BLS7G2729L-350P; BLS7G2729LS-350P BLS7G2729L-350P LS-350P PDF

    Untitled

    Abstract: No abstract text available
    Text: BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev. 2 — 6 May 2013 Objective data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz.


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    BLS7G2729L-350P; BLS7G2729LS-350P BLS7G2729L-350P LS-350P PDF

    Untitled

    Abstract: No abstract text available
    Text: BLF2425M7L250P; BLF2425M7LS250P Power LDMOS transistor Rev. 2 — 6 September 2012 Objective data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for various applications such as ISM and industrial heating at frequencies from 2400 MHz to 2500 MHz.


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    BLF2425M7L250P; BLF2425M7LS250P BLF2425M7L250P 2425M7LS250P PDF

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    Abstract: No abstract text available
    Text: BLF2425M7L250P; BLF2425M7LS250P Power LDMOS transistor Rev. 2 — 6 September 2012 Objective data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for various applications such as ISM and industrial heating at frequencies from 2400 MHz to 2500 MHz.


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    BLF2425M7L250P; BLF2425M7LS250P 2002/95/EC, BLF2425M7L250P 2425M7LS250P PDF

    Untitled

    Abstract: No abstract text available
    Text: BLF2425M7L250P; BLF2425M7LS250P Power LDMOS transistor Rev. 4 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for Industrial, Scientific and Medical ISM applications at frequencies from 2400 MHz to 2500 MHz.


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    BLF2425M7L250P; BLF2425M7LS250P BLF2425M7L250P BLF2425M7LS250P 2425M7LS250P PDF

    Untitled

    Abstract: No abstract text available
    Text: BLF2425M7L250P; BLF2425M7LS250P Power LDMOS transistor Rev. 3 — 26 February 2013 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for Industrial, Scientific and Medical ISM applications at frequencies from 2400 MHz to 2500 MHz.


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    BLF2425M7L250P; BLF2425M7LS250P BLF2425M7L250P BLF2425M7LS250P 2425M7LS250P PDF