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    SMF-06000

    Abstract: SMF06000
    Text: SMF-06000 ELECTRO NICS POWGI* O p tÌfflÌZ G C f Sam sung M icrow ave S em ico nd ucto r GaAs FET 2-18 GH z Description Features The SMF-06000 is a 600 urn n-channel MESFET with 0.5 |itn gate length, utilizing Samsung Microwave’s power optimized P5 process. Ti/Pt/Au gate metallization


    OCR Scan     		PDF SMF-06000 SMF-06000 SMF06000

    2388

    Abstract: 1S80
    Text: S M F -0 6 0 2 0 e itC T A O N « Sam sung M icrow ave Sem iconductor P O W O r O p t im iz e d GaAs FET 2-14 GHz Description Features The SMF-06020 Is a packaged version of the SMF-06000. The chip Is a 600 urn n-channel M ES FET with 0.5 jim gate length, utilizing Samsung Microwave’s power optimized P5


    OCR Scan     		PDF SMF-06020 SMF-06020 SMF-06000. SMF-06000 2388 1S80