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    silicon carbide JFET

    Abstract: 13AVGS SML100M12MSF silicon carbide j-fet LE17 2-58A
    Text: NORMALLY-OFF SILICON CARBIDE POWER JFET SML100M12MSF • RDS on max of 0.150Ω • High Temperature Operation Tj = 200°C • Low Gate Charge and Intrinsic Capacitance • Positive Temperature Coefficient and Temperature Independent Switching Behaviour APPLICATIONS


    Original     		PDF SML100M12MSF 300us, O-258AA) silicon carbide JFET 13AVGS SML100M12MSF silicon carbide j-fet LE17 2-58A

    silicon carbide JFET

    Abstract: POWER JFET silicon carbide j-fet silicon carbide
    Text: NORMALLY-OFF SILICON CARBIDE POWER JFET SML100M12MSF • RDS on max of 0.100Ω • High Temperature Operation Tj = 200°C • Low Gate Charge and Intrinsic Capacitance • Positive Temperature Coefficient and Temperature Independent Switching Behaviour APPLICATIONS


    Original     		PDF SML100M12MSF 300us, O-258AA) silicon carbide JFET POWER JFET silicon carbide j-fet silicon carbide