abstract magnetic-amplifier
Abstract: computer smps circuit diagram asymmetric flyback high frequency Transformer design uc3845 half bridge flyback smps uc3845 off-line flyback regulator uc3845 15v 60w smps flyback transformer diagram uc3845 isolated smps
Text: APPLICATION NOTE MODULAR DESIGN FOR MULTI-OUTPUT SMPS WITH SYNCHRONOUS POST REGULATION by L. Wuidart ABSTRACT INTRODUCTION This paper proposes a modular way of designing multiple output SMPS. A Synchronous Post Regulator, SPR , circuit is described in detail. This circuit
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high efficiency current mode flyback converter wi
Abstract: designing an offline Half-Bridge SMPS SMPS CIRCUIT DIAGRAM and working abstract magnetic-amplifier flyback smps uc3845 L497XA half bridge smps transformer design regulator input 220V output 15V DC 3A asymmetric flyback uc3845 half bridge
Text: APPLICATION NOTE MODULAR DESIGN FOR MULTI-OUTPUT SMPS WITH SYNCHRONOUS POST REGULATION by L. Wuidart ABSTRACT INTRODUCTION This paper proposes a modular way of designing multiple output SMPS. A Synchronous Post Regulator, SPR , circuit is described in detail. This circuit
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AN-1001
Abstract: IRF1010 vishay rectifier bridge 1982
Text: PD- 94820 IRF830APbF SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS Uninterruptable Power Supply High speed power switching Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic
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IRF830APbF
O-220AB
12-Mar-07
AN-1001
IRF1010
vishay rectifier bridge 1982
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Untitled
Abstract: No abstract text available
Text: PD- 94820 IRF830APbF SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS Uninterruptable Power Supply High speed power switching Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic
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IRF830APbF
O-220AB
08-Mar-07
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90092
Abstract: IRF1010 IRF830A 4.5v to 100v input regulator
Text: PD- 91878D IRF830A SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic
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91878D
IRF830A
O-220AB
12-Mar-07
90092
IRF1010
IRF830A
4.5v to 100v input regulator
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Untitled
Abstract: No abstract text available
Text: PD- 91878D IRF830A SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic
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91878D
IRF830A
O-220AB
08-Mar-07
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igbt inverter welder schematic
Abstract: SCHEMATIC 1000w smps 48V SMPS 1000w 24V 10A SMPS smps 500w half bridge smps 1000W full bridge mosfet smps 48V 100w SMPS inverter welder schematic half bridge converter 2kw
Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Discrete Solutions for Power Supplies Across the board. Around the world. Discrete Solutions for Power Supplies Fairchild Semiconductor is one of the world’s leading providers of Discrete Power Products, including Metal Oxide Semiconductor Field
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81145
Abstract: IRF830A SiHF830A SiHF830A-E3 free transistor vishay S8114
Text: IRF830A, SiHF830A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Available Requirement • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage
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IRF830A,
SiHF830A
O-220
18-Jul-08
81145
IRF830A
SiHF830A-E3
free transistor vishay
S8114
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S8114
Abstract: No abstract text available
Text: IRF830A, SiHF830A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Available Requirement • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage
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IRF830A,
SiHF830A
O-220
O-220
IRF830merchantability,
12-Mar-07
S8114
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Untitled
Abstract: No abstract text available
Text: PD- 95139 SMPS MOSFET IRF830AS/LPbF HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High Speed Power Switching l Lead-Free l Benefits Low Gate Charge Qg Results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic
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IRF830AS/LPbF
O-262
08-Mar-07
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Untitled
Abstract: No abstract text available
Text: PD- 92006A IRF830AS/L SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High Speed Power Switching l Benefits Low Gate Charge Qg Results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic
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2006A
IRF830AS/L
O-262
08-Mar-07
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UC3845 dc dc design tool
Abstract: ST6210 mobile battery charging automatic off uc3845 SCHEMATIC smps 48V SMPS BATTERY CHARGER uc3845 isolated smps uc3845 schematic APPLICATION NOTES OF SMPS CHARGERS battery charger schematic uc3845 reference smps
Text: APPLICATION NOTE ULTRA FAST NiCd BATTERY CHARGING USING ST6210 MICROCONTROLLER L. Wuidart, P. Richter INTRODUCTION Today many cordless and portable equipments are supplied by a Nickel-Cadmium NiCd battery. The ultra fast charging of these batteries in less than half an hour is a
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ST6210
UC3845 dc dc design tool
mobile battery charging automatic off
uc3845 SCHEMATIC smps
48V SMPS BATTERY CHARGER
uc3845 isolated smps
uc3845 schematic
APPLICATION NOTES OF SMPS CHARGERS
battery charger schematic
uc3845 reference smps
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International Rectifier IRF830A
Abstract: AN-994 IRF830A
Text: PD- 92006A IRF830AS/L SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High Speed Power Switching l Benefits Low Gate Charge Qg Results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic
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2006A
IRF830AS/L
O-262
12-Mar-07
International Rectifier IRF830A
AN-994
IRF830A
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AN-994
Abstract: IRF830A International Rectifier IRF830A
Text: PD- 95139 SMPS MOSFET IRF830AS/LPbF HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High Speed Power Switching l Lead-Free l Benefits Low Gate Charge Qg Results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic
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IRF830AS/LPbF
O-262
12-Mar-07
AN-994
IRF830A
International Rectifier IRF830A
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IRF830AL
Abstract: IRF830AS SiHF830A SiHF830AL SiHF830AL-E3 SiHF830AS SiHF830AS-E3
Text: IRF830AS, IRF830AL, SiHF830AS, SiHF830AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Max.) (Ω) VGS = 10 V 1.40 Qg (Max.) (nC) 24 Qgs (nC) 6.3 Qgd (nC) 11 Configuration
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IRF830AS,
IRF830AL,
SiHF830AS
SiHF830AL
O-263)
O-262)
18-Jul-08
IRF830AL
IRF830AS
SiHF830A
SiHF830AL-E3
SiHF830AS-E3
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IRF830A
Abstract: SiHF830A SiHF830A-E3
Text: IRF830A, SiHF830A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Available Requirement • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage
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IRF830A,
SiHF830A
2002/95/EC
O-220AB
11-Mar-11
IRF830A
SiHF830A-E3
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IRF830AL
Abstract: IRF830AS SiHF830A SiHF830AL SiHF830AL-E3 SiHF830AS SiHF830AS-E3 4.5v to 100v input regulator
Text: IRF830AS, IRF830AL, SiHF830AS, SiHF830AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Max.) (Ω) VGS = 10 V 1.40 Qg (Max.) (nC) 24 Qgs (nC) 6.3 Qgd (nC) 11 Configuration
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IRF830AS,
IRF830AL,
SiHF830AS
SiHF830AL
O-263)
O-262)
18-Jul-08
IRF830AL
IRF830AS
SiHF830A
SiHF830AL-E3
SiHF830AS-E3
4.5v to 100v input regulator
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4.5v to 100v input regulator
Abstract: No abstract text available
Text: IRF830AS, IRF830AL, SiHF830AS, SiHF830AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Max.) (Ω) VGS = 10 V 1.40 Qg (Max.) (nC) 24 Qgs (nC) 6.3 Qgd (nC) 11 Configuration
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IRF830AS,
IRF830AL,
SiHF830AS
SiHF830AL
O-262)
O-263)
12-Mar-07
4.5v to 100v input regulator
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Untitled
Abstract: No abstract text available
Text: IRF830A, SiHF830A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Available Requirement • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage
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IRF830A,
SiHF830A
2002/95/EC
O-220AB
11-Mar-11
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IRF830AL
Abstract: IRF830AS SiHF830AL SiHF830AS SiHF830AS-E3
Text: IRF830AS, IRF830AL, SiHF830AS, SiHF830AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt
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IRF830AS,
IRF830AL,
SiHF830AS
SiHF830AL
2002/95/EC
O-263)
O-262)
11-Mar-11
IRF830AL
IRF830AS
SiHF830AS-E3
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Untitled
Abstract: No abstract text available
Text: IRF830A, SiHF830A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Available Requirement • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage
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IRF830A,
SiHF830A
2002/95/EC
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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IRf 334
Abstract: IRF 830 TRANSISTOR irf 830 Fi 830 application note using irf 830 diode on 832 irf ballast 831 transistor irf 832 IRF832
Text: SGS-THOMSON üLKgirœraOÊi IRF 830/FI-831/FI IRF 832/FI-833/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VDSS IRF830 IRF830FI 500 V 500 V IRF831 IRF831FI 450 V 450 V IRF832 IRF832FI 500 V 500 V IRF833 IRF833FI 450 V 450 V ^DS on 1.5 fi 1.5 fi
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830/FI-831/FI
832/FI-833/FI
IRF830
IRF830FI
IRF831
IRF831FI
IRF832
IRF832FI
IRF833
IRF833FI
IRf 334
IRF 830 TRANSISTOR
irf 830
Fi 830
application note using irf 830
diode on 832
irf ballast
831 transistor
irf 832
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LG diode 831
Abstract: 831 transistor IRF 830 IRf 334 IRF 830 TRANSISTOR irf 831 SMPS using IRF830 IRF830Fi transistor 831 Fi 830
Text: S C S -T H O M S O N ^ 7 J IIIC T » » TM IRF 830/FI-831/FI IRF 832/FI-833/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF830 IRF830FI VDSS 500 V 500 V RDS on 1.5 Ü 1.5 Q 'o ' 4.5 A 3.0 A IRF831 IRF831FI 450 V 450 V 1.5 n 1.5 n 4.5 A 3.0 A
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830/FI-831/FI
832/FI-833/FI
IRF830
IRF830FI
IRF831
IRF831FI
IRF832
IRF832FI
IRF833
IRF833FI
LG diode 831
831 transistor
IRF 830
IRf 334
IRF 830 TRANSISTOR
irf 831
SMPS using IRF830
transistor 831
Fi 830
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BF 331 TRANSISTORS
Abstract: ibf830 SD 336 IRf 334 MOS 3020 application note using irf 830 rf830 BF 830 transistor transistor maw CJ135
Text: 30E D rzj S • 7^237 SCS-THOMSON G s^THÖMSoF TYPE IRF830 IRF830FI IRF831 IRF831FI IRF832 IRF832FI IRF833 , IRF833FI QG2Sßl3 b ■ VDSS 500 V 500 V 450 V 450 V 500 V 500 V 450 V 450 V N ^DS on 1.5 n 1.5 n 1.5 n 1.5 ß 2.0 Q 2.0 fl 2.0 Q 2.0 a - ( _
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830/FI-831/FI
832/FI-833/FI
IRF830
IRF830FI
IRF831
IRF831FI
IRF832
IRF832FI
IRF833
IRF833FI
BF 331 TRANSISTORS
ibf830
SD 336
IRf 334
MOS 3020
application note using irf 830
rf830
BF 830 transistor
transistor maw
CJ135
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