MO-061-AB

Abstract: 32P0K SOJ32-P-400-1 DSA0037294.txt
Contextual Info: 32P0K Plastic 32pin 400mil SOJ EIAJ Package Code SOJ32-P-400-1.27 JEDEC Code MO-061AB Weight g 1.33 Lead Material Alloy 42 e b2 D 32 I1 I2 c e1 HE E e1 17 Recommended Mount Pad Symbol 1 16 L A A1 b1 e y b SEATING PLANE A A1 b b1 c D E e e1 HE L y b2 I1 I2

32P0K

Abstract: PRSJ0032DA-A
Contextual Info: JEITA Package Code P-SOJ32-10.16x20.85-1.27 RENESAS Code PRSJ0032DA-A *1 Previous Code 32P0K MASS[Typ.] 1.2g c D 32 e1 HE *2 E 17 NOTE 1. DIMENSIONS "*1" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. 16 1 L Index mark

B628

Abstract: 1 megabit 128K x 8 SRAM
Contextual Info: M628128 1 Megabit 128K x 8 VERY FAST SRAM WITH OUTPUT ENABLE DATA BRIEFING 128K x 8 VERY FAST SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIMES: 15, 20ns LOW VCC DATA RETENTION: 2V TRI-STATE COMMON I/O JEDEC PLASTIC SOJ, 400 mil PACKAGE 32 1 SOJ32 (E)

Contextual Info: SOJ32-P-400-1.27-1 Mirror finish 5 パッケージ材質 リードフレーム材質 端子処理方法・材質 パッケージ質量 g 版数/改版日 エポキシ樹脂 42 アロイ 半田メッキ (≥5µm) 1.32 TYP. 4 版/98.11.13

SOJ32-P-400-1

Abstract: 32P0K
Contextual Info: e y b 16 1 b1 Weight g 1.33 17 D JEDEC Code MO-061AB 32 EIAJ Package Code SOJ32-P-400-1.27 Lead Material Alloy 42 E 32P0K A HE L c SEATING PLANE A1 b2 A A1 b b1 c D E e e1 HE L y b2 I1 I2 Symbol Mar.’98 Dimension in Millimeters Min Nom Max 3.55 3.35 3.45

SOJ32-P-400-1

Contextual Info: SOJ32-P-400-1.27 Mirror finish 5 Package material Lead frame material Pin treatment Package weight g Rev. No./Last Revised Epoxy resin 42 alloy Solder plating (≥5µm) 1.42 TYP. 5/Dec. 5, 1996

SOJ32-P-400-1

Contextual Info: SOJ32-P-400-1.27-1 Unit in millimeters typ., unless otherwise specified. Semiconductor Please consult OKI for soldering, assembly and storage recommendations. Specification are subject to change without notice. The drawings do not substitute or replace a product’s datasheet or the Package Information Databook.

Contextual Info: 32P0J Plastic 32pin 300mil SOJ EIAJ Package Code SOJ32-P-300-1.27 JEDEC Code – Weight g 1.03 Lead Material Alloy 42 D e1 c 32 e1 HE 17 E b2 I1 I2 e Recommended Mount Pad 1 Symbol 16 L A A1 b1 e y b SEATING PLANE A A1 b b1 c D E e e1 HE L y b2 I1 I2 Dimension in Millimeters

PA-SOJ32C-L-V-01

Abstract: PA-SOJ32C-L-V-01W
Contextual Info: 1.600" 0.299" 0.050" 0.241" '93 SA I.E. 1 PA-SOJ32C-L-V-01 0.800" 0.989" 0.187" 2 Side View End View 0.141" 0.100" 0.100" 0.193" PA-SOJ32C-L-V-01W 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 0.507" Pin Mapping X-Ray Top View

Contextual Info: SOJ32-P-400-1.27 Mirror finish 5 パッケージ材質 リードフレーム材質 端子処理方法・材質 パッケージ質量 g 版数/改版日 エポキシ樹脂 42 アロイ 半田メッキ (≥5µm) 1.42 TYP. 5 版/96.12.5

SOJ32-P-400-1

Contextual Info: e y b 16 1 b1 Weight g 17 D JEDEC Code – 32 EIAJ Package Code SOJ32-P-400-1.27 SEATING PLANE L c Under Development Lead Material Alloy 42 E b2 A A1 b b1 c D E e e1 HE L y b2 I1 I2 Symbol Mar.’98 Dimension in Millimeters Min Nom Max 3.55 3.35 3.45 0.8

SOJ32-P-400-1

Contextual Info: SOJ32-P-400-1.27-1 Mirror finish 5 Package material Lead frame material Pin treatment Package weight g Rev. No./Last Revised Epoxy resin 42 alloy Solder plating (≥5µm) 1.32 TYP. 4/Nov. 13, 1998

SOJ32

Abstract: SOJ32-P-400-1
Contextual Info: SOJ32-P-400-1.27 Unit in millimeters typ., unless otherwise specified. Semiconductor Please consult OKI for soldering, assembly and storage recommendations. Specification are subject to change without notice. The drawings do not substitute or replace a product’s datasheet or the Package Information Databook.

M628128

Abstract: SOJ32
Contextual Info: M628128 1 Megabit 128K x 8 VERY FAST SRAM WITH OUTPUT ENABLE 128K x 8 VERY FAST SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIMES: 15, 20ns LOW VCC DATA RETENTION: 2V TRI-STATE COMMON I/O JEDEC PLASTIC SOJ, 400 mil PACKAGE 32 1 SOJ32 (E) 400 mils DESCRIPTION

Contextual Info: Top View 0.480" 0.365" 0.215" Side View 0.025" 0.050" 0.900" SMT lands x32 0.418" End View (high profile) 0.373" 0.375" 0.418" SM "J" foot (x36) End View (low profile) DC-SOJ32_36-01 DRAWING 1997 IRONWOOD ELECTRONICS, INC. PO BOX 21151 ST. PAUL, MN 55121

Contextual Info: TOSHIBA TC5164 5 805AJ/AFT/AJS/AFTS-40,-50 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8,388,6O8-WORD X8-BIT EDO (HYPER PAGE) DYNAMIC RAM DESCRIPTION The TC5164(5)805AJ/AFT/AJS/AFTS is an EDO (hyper page) dynamic RAM organized as 8,388,608

Contextual Info: TOSHIBA TC55V1403J/FT-15.-20 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4,194,304-WORD BY 1-BIT/1,048,576-WORD BY 4-BIT C M O S STATIC R A M DESCRIPTION The TC55V1403J/FT is a 4,194,304-bit high speed static random access memory SRAM , it is possible to

sdc 603

Abstract: SDC-602 plcc 52 SOCKET sdc603 MX-500P-21 sdc 606 sdc606 STTC-136 132 qfp extraction tool METCAL SP200
Contextual Info: soldering desoldering & rework systems contents and preface Contents 1 Introducing the QX2 2 QX2 system elements and functions 3 QX2 system elements and functions 4 Part numbers for the QX2 5 The power of SmartHeat 6 The power of SmartHeat 7 MX rework systems

Contextual Info: IBM0165405B IBM0165405P 1 6 M x 4 12/12 EDO DRAM Features • 16,777,216 word by 4 bit organization Read-Modify-Write • Single 3.3 ± 0.3V power supply Performance: • Extended Data Out CAS before RAS Refresh - 4096 cycles/Retention Time 64ms Standard Power SP Retention Time

SMD MARKING CODE AQ1

Abstract: MARKING CODE SMD JW C17S 16T MARKING P-SOJ-32-1 TSOP-32 Q67100-Q1536
Contextual Info: SIEM ENS 16M X 4-Bit Dynamic RAM 4k & 8k-Refresh HYB 3164400AJ/AT(L) -40/-50/-60 HY b 3165400AJ/AT(L) -40/-50/-60 Prelim inary Inform ation • 16 777 216 words by 4-bit organization • 0 to 70 "C operating tem perature • Fast Page M ode operation •

TC558128AJ-20

Contextual Info: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC558128AJ-15/20 PRELIMINARY SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS STATIC RAM Description The TC558128AJ is a 1,048,576 bits high speed static random access memory organized as 131,072 words by 8 bits using CMOS technology, and operated from a single 5-volt supply. Toshiba’s CMOS technology and advanced circuit form provide high

Contextual Info: TOSHIBA TC558128BJ/BFT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131.D72-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The TC558128BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high

BFT10

Contextual Info: TOSHIBA TC558128BJ/BFT-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The TC558128BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high

MD51V64400

Abstract: MD51V64400-50 MD51V64400-60 SOJ32-P-400-1 TSOP-II-32
Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.