MO-061-AB
Abstract: 32P0K SOJ32-P-400-1 DSA0037294.txt
Text: 32P0K Plastic 32pin 400mil SOJ EIAJ Package Code SOJ32-P-400-1.27 JEDEC Code MO-061AB Weight g 1.33 Lead Material Alloy 42 e b2 D 32 I1 I2 c e1 HE E e1 17 Recommended Mount Pad Symbol 1 16 L A A1 b1 e y b SEATING PLANE A A1 b b1 c D E e e1 HE L y b2 I1 I2
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32P0K
32pin
400mil
SOJ32-P-400-1
MO-061AB
MO-061-AB
32P0K
DSA0037294.txt
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32P0K
Abstract: PRSJ0032DA-A
Text: JEITA Package Code P-SOJ32-10.16x20.85-1.27 RENESAS Code PRSJ0032DA-A *1 Previous Code 32P0K MASS[Typ.] 1.2g c D 32 e1 HE *2 E 17 NOTE 1. DIMENSIONS "*1" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. 16 1 L Index mark
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P-SOJ32-10
16x20
PRSJ0032DA-A
32P0K
32P0K
PRSJ0032DA-A
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B628
Abstract: 1 megabit 128K x 8 SRAM
Text: M628128 1 Megabit 128K x 8 VERY FAST SRAM WITH OUTPUT ENABLE DATA BRIEFING 128K x 8 VERY FAST SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIMES: 15, 20ns LOW VCC DATA RETENTION: 2V TRI-STATE COMMON I/O JEDEC PLASTIC SOJ, 400 mil PACKAGE 32 1 SOJ32 (E)
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M628128
SOJ32
M628128
A0-A16
AI00804B
SOJ32
B628
1 megabit 128K x 8 SRAM
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Untitled
Abstract: No abstract text available
Text: SOJ32-P-400-1.27-1 Mirror finish 5 パッケージ材質 リードフレーム材質 端子処理方法・材質 パッケージ質量 g 版数/改版日 エポキシ樹脂 42 アロイ 半田メッキ (≥5µm) 1.32 TYP. 4 版/98.11.13
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SOJ32-P-400-1
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SOJ32-P-400-1
Abstract: 32P0K
Text: e y b 16 1 b1 Weight g 1.33 17 D JEDEC Code MO-061AB 32 EIAJ Package Code SOJ32-P-400-1.27 Lead Material Alloy 42 E 32P0K A HE L c SEATING PLANE A1 b2 A A1 b b1 c D E e e1 HE L y b2 I1 I2 Symbol Mar.’98 Dimension in Millimeters Min Nom Max 3.55 3.35 3.45
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MO-061AB
SOJ32-P-400-1
32P0K
32pin
400mil
32P0K
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PDF
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SOJ32-P-400-1
Abstract: No abstract text available
Text: SOJ32-P-400-1.27 Mirror finish 5 Package material Lead frame material Pin treatment Package weight g Rev. No./Last Revised Epoxy resin 42 alloy Solder plating (≥5µm) 1.42 TYP. 5/Dec. 5, 1996
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SOJ32-P-400-1
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SOJ32-P-400-1
Abstract: No abstract text available
Text: SOJ32-P-400-1.27-1 Unit in millimeters typ., unless otherwise specified. Semiconductor Please consult OKI for soldering, assembly and storage recommendations. Specification are subject to change without notice. The drawings do not substitute or replace a product’s datasheet or the Package Information Databook.
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SOJ32-P-400-1
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Untitled
Abstract: No abstract text available
Text: 32P0J Plastic 32pin 300mil SOJ EIAJ Package Code SOJ32-P-300-1.27 JEDEC Code – Weight g 1.03 Lead Material Alloy 42 D e1 c 32 e1 HE 17 E b2 I1 I2 e Recommended Mount Pad 1 Symbol 16 L A A1 b1 e y b SEATING PLANE A A1 b b1 c D E e e1 HE L y b2 I1 I2 Dimension in Millimeters
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32P0J
32pin
300mil
SOJ32-P-300-1
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PA-SOJ32C-L-V-01
Abstract: PA-SOJ32C-L-V-01W
Text: 1.600" 0.299" 0.050" 0.241" '93 SA I.E. 1 PA-SOJ32C-L-V-01 0.800" 0.989" 0.187" 2 Side View End View 0.141" 0.100" 0.100" 0.193" PA-SOJ32C-L-V-01W 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 0.507" Pin Mapping X-Ray Top View
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PA-SOJ32C-L-V-01
PA-SOJ32C-L-V-01W
FR4/G10
PA-SOIC32-CV-L-01
PA-SOJ32C-L-V-01
PA-SOJ32C-L-V-01W
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Untitled
Abstract: No abstract text available
Text: SOJ32-P-400-1.27 Mirror finish 5 パッケージ材質 リードフレーム材質 端子処理方法・材質 パッケージ質量 g 版数/改版日 エポキシ樹脂 42 アロイ 半田メッキ (≥5µm) 1.42 TYP. 5 版/96.12.5
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SOJ32-P-400-1
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SOJ32-P-400-1
Abstract: No abstract text available
Text: e y b 16 1 b1 Weight g 17 D JEDEC Code – 32 EIAJ Package Code SOJ32-P-400-1.27 SEATING PLANE L c Under Development Lead Material Alloy 42 E b2 A A1 b b1 c D E e e1 HE L y b2 I1 I2 Symbol Mar.’98 Dimension in Millimeters Min Nom Max 3.55 3.35 3.45 0.8
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SOJ32-P-400-1
32pin
400mil
32P0N-A
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PDF
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SOJ32-P-400-1
Abstract: No abstract text available
Text: SOJ32-P-400-1.27-1 Mirror finish 5 Package material Lead frame material Pin treatment Package weight g Rev. No./Last Revised Epoxy resin 42 alloy Solder plating (≥5µm) 1.32 TYP. 4/Nov. 13, 1998
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SOJ32-P-400-1
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SOJ32
Abstract: SOJ32-P-400-1
Text: SOJ32-P-400-1.27 Unit in millimeters typ., unless otherwise specified. Semiconductor Please consult OKI for soldering, assembly and storage recommendations. Specification are subject to change without notice. The drawings do not substitute or replace a product’s datasheet or the Package Information Databook.
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SOJ32-P-400-1
SOJ32
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M628128
Abstract: SOJ32
Text: M628128 1 Megabit 128K x 8 VERY FAST SRAM WITH OUTPUT ENABLE 128K x 8 VERY FAST SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIMES: 15, 20ns LOW VCC DATA RETENTION: 2V TRI-STATE COMMON I/O JEDEC PLASTIC SOJ, 400 mil PACKAGE 32 1 SOJ32 (E) 400 mils DESCRIPTION
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M628128
SOJ32
M628128
SOJ32
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Untitled
Abstract: No abstract text available
Text: Top View 0.480" 0.365" 0.215" Side View 0.025" 0.050" 0.900" SMT lands x32 0.418" End View (high profile) 0.373" 0.375" 0.418" SM "J" foot (x36) End View (low profile) DC-SOJ32_36-01 DRAWING 1997 IRONWOOD ELECTRONICS, INC. PO BOX 21151 ST. PAUL, MN 55121
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DC-SOJ32
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sdc 603
Abstract: SDC-602 plcc 52 SOCKET sdc603 MX-500P-21 sdc 606 sdc606 STTC-136 132 qfp extraction tool METCAL SP200
Text: soldering desoldering & rework systems contents and preface Contents 1 Introducing the QX2 2 QX2 system elements and functions 3 QX2 system elements and functions 4 Part numbers for the QX2 5 The power of SmartHeat 6 The power of SmartHeat 7 MX rework systems
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MD51V64400
Abstract: MD51V64400-50 MD51V64400-60 SOJ32-P-400-1 TSOP-II-32
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
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MD51V64400
SOJ32-P-400-1
MD51V64400
MD51V64400-50
MD51V64400-60
TSOP-II-32
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC5164 5 805AJ/AFT/AJS/AFTS-40,-50 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8,388,6O8-WORD X8-BIT EDO (HYPER PAGE) DYNAMIC RAM DESCRIPTION The TC5164(5)805AJ/AFT/AJS/AFTS is an EDO (hyper page) dynamic RAM organized as 8,388,608
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TC5164
805AJ/AFT/AJS/AFTS-40
805AJ/AFT/AJS/AFTS
32-pin
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC55V1403J/FT-15.-20 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4,194,304-WORD BY 1-BIT/1,048,576-WORD BY 4-BIT C M O S STATIC R A M DESCRIPTION The TC55V1403J/FT is a 4,194,304-bit high speed static random access memory SRAM , it is possible to
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TC55V1403J/FT-15
304-WORD
576-WORD
TC55V1403J/FT
304-bit
SOJ32-P-400-1
PII32-P-400-1
35MAX
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PDF
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Untitled
Abstract: No abstract text available
Text: IBM0165405B IBM0165405P 1 6 M x 4 12/12 EDO DRAM Features • 16,777,216 word by 4 bit organization Read-Modify-Write • Single 3.3 ± 0.3V power supply Performance: • Extended Data Out CAS before RAS Refresh - 4096 cycles/Retention Time 64ms Standard Power SP Retention Time
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IBM0165405B
IBM0165405P
104ns
504mW
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PDF
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SMD MARKING CODE AQ1
Abstract: MARKING CODE SMD JW C17S 16T MARKING P-SOJ-32-1 TSOP-32 Q67100-Q1536
Text: SIEM ENS 16M X 4-Bit Dynamic RAM 4k & 8k-Refresh HYB 3164400AJ/AT(L) -40/-50/-60 HY b 3165400AJ/AT(L) -40/-50/-60 Prelim inary Inform ation • 16 777 216 words by 4-bit organization • 0 to 70 "C operating tem perature • Fast Page M ode operation •
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3164400AJ/AT
3165400AJ/AT
P-TSOPtl-32-1
23SL0S
SMD MARKING CODE AQ1
MARKING CODE SMD JW
C17S
16T MARKING
P-SOJ-32-1
TSOP-32
Q67100-Q1536
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TC558128AJ-20
Abstract: No abstract text available
Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC558128AJ-15/20 PRELIMINARY SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS STATIC RAM Description The TC558128AJ is a 1,048,576 bits high speed static random access memory organized as 131,072 words by 8 bits using CMOS technology, and operated from a single 5-volt supply. Toshiba’s CMOS technology and advanced circuit form provide high
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TC558128AJ-15/20
TC558128AJ
32-pin
SR01010795
SOJ32-P-400A)
TC558128AJ-20
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC558128BJ/BFT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131.D72-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The TC558128BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high
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TC558128BJ/BFT-12
D72-WORD
TC558128BJ/BFT
576-bit
SOJ32-P-4QO-1
38MAX
32-P-400-0
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PDF
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BFT10
Abstract: No abstract text available
Text: TOSHIBA TC558128BJ/BFT-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The TC558128BJ/BFT is a 1,048,576-bit high-speed static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high
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TC558128BJ/BFT-10
072-WORD
TC558128BJ/BFT
576-bit
SOJ32-P-400-1
38MAX
32-P-400-0
BFT10
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PDF
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