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    SOT 323 5 504 Search Results

    SOT 323 5 504 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT 323 5 504 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    heds 5310

    Abstract: VC 5022-2 p605 mosfet HEDS 6310 encoder heds 6310 acsl 086 s SMD MOSFET DRIVE 4606 Alps GMR sensor transistor 5503 dm logitech x 530
    Text: Avago Technologies www.avagotech.com AVAGO TECHNOLOGIES EBV Elektronik GmbH & Co. KG www.ebv.com Оптоэлектронные и СВЧ компоненты «Аваго Текнолоджиз» АПРЕЛЬ ОПТОЭЛЕКТРОННЫЕ И СВЧ КОМПОНЕНТЫ «АВАГО ТЕКНОЛОДЖИЗ»


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    AN-450 surface mounting methods

    Abstract: PLCC20 SO16W SO20W SO24W SO28W VSO40 VSO56 SMD ic catalogue Packaging trends
    Text: Issued July 1995 020-420 Data Pack H An introduction to surface mounting Data Sheet What is surface mounting? What are SMDs? In conventional board assembly technology the component leads are inserted into holes through the PCB and connected to the solder pads by wave soldering


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    SO14W

    Abstract: siemens rotating diode assembly SO24W MELF 0207 PLCC20 SO16W SO20W SO28W VSO40 VSO56
    Text: Data Pack H Issued November 2005 1502325569 An introduction to surface mounting Data Sheet What is surface mounting? What are SMDs? In conventional board assembly technology the component leads are inserted into holes through the PCB and connected to the solder pads by wave soldering


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    SO14W

    Abstract: siemens rotating diode assembly SO32W 301 miniature smd transistor plcc-44 smd paper phenolic PCB SO24W 20L SMD SOT-23 TSOP infrared
    Text: Issued March 1997 232-5569 Data Pack H An introduction to surface mounting Data Sheet What is surface mounting? What are SMDs? In conventional board assembly technology the component leads are inserted into holes through the PCB and connected to the solder pads by wave soldering


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    2x062h

    Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
    Text: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目 录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1


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    PDF ZMM22 ZMM24 ZMM27 ZMM43 ZMM47 2x062h gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062

    TRANSISTOR AH-16

    Abstract: TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


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    PDF DL126/D Nov-2001 r14525 DL126 TRANSISTOR AH-16 TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601

    CBF493S

    Abstract: BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


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    PDF DL126/D Nov-2001 r14525 DL126/D CBF493S BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ

    marking 513 SOD-323

    Abstract: transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


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    PDF DL126/D Nov-2001 r14525 DL126/D marking 513 SOD-323 transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256

    BC237

    Abstract: bc547 pnp 16Qv
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Complementary Pair Transistors NPN/PNP Silicon 14 13 12 11 10 9 8 1 2 3 4 5 6 7 MPQ6001, MPQ6002 TYPE A 14 13 12 11 10 9 8 6 7 MPQ6001 MPQ6002 MPQ6502 Voltage and current are negative for PNP transistors COMPLEMENTARY


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    PDF MPQ6001 MPQ6002 MPQ6502 MPQ6001, MPQ6502 MPQ6002, BC237 bc547 pnp 16Qv

    marking code C1E SMD Transistor

    Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
    Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17


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    PDF P14740EE5V0PF00 marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817

    Untitled

    Abstract: No abstract text available
    Text: M 1998 Semi-Annual Reliability Report compiled 10/98 INTRODUCTION RELIABILITY CONTROL SYSTEM Quality Comes First By adhering to this guiding value, Microchip Technology Inc. has achieved competitive leadership in quality and reliability for its products. Demonstrated performance


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    EPROM retention bake

    Abstract: No abstract text available
    Text: M 1998 Semi-Annual Reliability Report compiled 10/98 INTRODUCTION RELIABILITY CONTROL SYSTEM Quality Comes First By adhering to this guiding value, Microchip Technology Inc. has achieved competitive leadership in quality and reliability for its products. Demonstrated performance


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    PDF DS00131B-page EPROM retention bake

    BC517 spice model

    Abstract: bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S
    Text: Selector Guide 1 Plastic-Encapsulated Transistors 2 GreenLine Portfolio Devices 3 Small-Signal Field-Effect Transistors and MOSFETs 4 Small-Signal Tuning and Switching Diodes 5 Tape and Reel Specifications and Packaging Specifications 6 Surface Mount Information


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    PDF VN2410L BC517 spice model bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S

    matrix 2088ab

    Abstract: 2088AB led matrix torque settings chart for metric stainless bolts led matrix 2088ab 2088AB* led matrix PHASE CONTROL THYRISTOR MODULE TT 56 N SIL-PAD to-247 Ultrasonic humidifier circuit full wave BRIDGE RECTIFIER 1044 2088AB
    Text: Soldering and Mounting Techniques Reference Manual SOLDERRM/D Rev. 5, January−2007 SCILLC, 2007 “All Rights Reserved” SOLDERRM FULLPAK, ICePAK, MicroIntegration, MicroLeadless, MOSORB, MiniMOSORB, and POWERTAP are trademarks of Semiconductor Components Industries, LLC SCILLC . Cho−Therm is a registered trademark of Chromerics, Inc. Grafoil is a registered trademark of


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    PDF January-2007 matrix 2088ab 2088AB led matrix torque settings chart for metric stainless bolts led matrix 2088ab 2088AB* led matrix PHASE CONTROL THYRISTOR MODULE TT 56 N SIL-PAD to-247 Ultrasonic humidifier circuit full wave BRIDGE RECTIFIER 1044 2088AB

    AN569

    Abstract: MTD20P03HDL SMD310
    Text: MOTOROLA Order this document by MTD20P03HDL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet HDTMOS E-FET. High Density Power FET DPAK for Surface Mount Designer's MTD20P03HDL Motorola Preferred Device TMOS POWER FET LOGIC LEVEL 19 AMPERES 30 VOLTS RDS on = 0.099 OHM


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    PDF MTD20P03HDL/D MTD20P03HDL MTD02P03HDL/D* AN569 MTD20P03HDL SMD310

    20P 03HL

    Abstract: 20p03 20P03HL MOSFET P-channel SOT-23 diode sod-123 marking code 120 Amp. mosfet 1000 watt marking 1200 sod-123 MTD20P03HDLT4 sot-23 P-Channel MOSFET SOT 143 footprint
    Text: MTD20P03HDL Preferred Device Power MOSFET 20 Amps, 30 Volts, Logic Level P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for


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    PDF MTD20P03HDL MTD20P03HDL/D 20P 03HL 20p03 20P03HL MOSFET P-channel SOT-23 diode sod-123 marking code 120 Amp. mosfet 1000 watt marking 1200 sod-123 MTD20P03HDLT4 sot-23 P-Channel MOSFET SOT 143 footprint

    Untitled

    Abstract: No abstract text available
    Text: MTD20P03HDL Preferred Device HDTMOS E-FET  High Density Power FET DPAK for Surface Mount P–Channel Enhancement–Mode Silicon Gate http://onsemi.com This advanced HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy


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    PDF MTD20P03HDL r14525 MTD20P03HDL/D

    20P 03HL

    Abstract: 20P03HL 20P-03HL 20p03 MTD20P03HDL MOSFET SC-59 power 03HL 369D AN569 MTD20P03HDLT4
    Text: MTD20P03HDL Preferred Device Power MOSFET 20 Amps, 30 Volts, Logic Level P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for


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    PDF MTD20P03HDL MTD20P03HDL/D 20P 03HL 20P03HL 20P-03HL 20p03 MTD20P03HDL MOSFET SC-59 power 03HL 369D AN569 MTD20P03HDLT4

    E3P102

    Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
    Text: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001  SCILLC, 2001 Previous Edition  1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.


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    PDF DL135/D Apr-2001 r14525 DLD601 E3P102 T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl

    Untitled

    Abstract: No abstract text available
    Text: 12 Non-Inductive 100 Watt Power Resistor in the SOT 227 Power Device Configuration D ue to a non in d u c tiv e d e s ig n th e s e e le m e n ts a re id e a lly su ite d fo r h ig h fre q u e n c y a n d p u lse lo a d a p p lic a tio n s . By d ire c t m o u n tin g on a he atsin k


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    Untitled

    Abstract: No abstract text available
    Text: MegaMOS FET IXTN79N20 V DSS = 200 V ^ D 2 5 _ D _ DS on ” 85 A 25 mQ N-Channel Enhancement Mode OD G 1 KS r ¿ s Maximum Ratings miniBLOC, SOT-227 B 200 V s 200 V Continuous ±20 V Transient ±30 V Symbol Test Conditions VDSS Tj = 25°C to 150°C v DGR


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    PDF IXTN79N20 OT-227 4bfib22b DQ02201 79N20 4bflb22b

    diode T88

    Abstract: f g megamos ixys ixtn 79n20 megamos megamos 13 LD25 IXTN79N20 ixtn 79n20 79N20 425al
    Text: MegaMOS FET IXTN79N20 V DSS I D25 RDS on = 200 V = 85 A = 25 m ß N-Channel Enhancement Mode OD G 1 r Ks Symbol Test Conditions V DSS TJ = VDGR VGS VGSM ¿S Maximum Ratings 200 V Tj = 25°C to 150°C; RGS = 10 k£2 200 V Continuous ±20 V T ransient ±30


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    PDF IXTN79N20 OT-227 diode T88 f g megamos ixys ixtn 79n20 megamos megamos 13 LD25 ixtn 79n20 79N20 425al

    IXTN79N20

    Abstract: ixys ixtn 79n20 sra 2201 79N20 4bob ixtn 79n20
    Text: IXTN79N20 V DSS MegaMOS FET I D25 RDS on N-Channel Enhancement Mode = 200 V = 85 A = 25 m fì OD e 1 KS ^ 1 ÒS Maximum Ratings Symbol Test Conditions V DSS Tj = 25°C to 1 50°C 200 V VDGR Tj = 25°C to 150°C; RGS= 10 kQ 200 V VGS Continuous ±20 V VCSM


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    PDF IXTN79N20 OT-227 ixys ixtn 79n20 sra 2201 79N20 4bob ixtn 79n20

    Untitled

    Abstract: No abstract text available
    Text: 8-C H AN N EL SOURCE D R IV E R S This versatile family of integrated circuits will work with many combinations of logic- and load-voltage levels, meeting interface requirements beyond the capabilities of standard logic buffers. Series UDN2580A/LW source drivers can drive incandescent, LED, or vacuum


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    PDF UDN2580A/LW 2580/85L 25S0/85A UDN2580A UDN2580LW DSD433Ã 00D77b3 0S0433S UDN2580A B-1458A