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    SOT-23 1P Search Results

    SOT-23 1P Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT-23 1P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P


    Original     		PDF OT-23 MMBT2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors 3DK2222A SOT-23 TRANSISTOR NPN FEATURES y y 1. BASE Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 2.EMITTER 3.COLLECTOR MARKING: 1P1


    Original     		PDF OT-23 3DK2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors 3DK2222A SOT-23 TRANSISTOR NPN FEATURES y y 1. BASE Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 2.EMITTER 3.COLLECTOR MARKING: 1P1


    Original     		PDF OT-23 3DK2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz

    MARKING 1P

    Abstract: MMBT2222A MMBT2907A 1p sot23 TRANSISTOR 1P SOT23
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P


    Original     		PDF OT-23 MMBT2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz MARKING 1P MMBT2222A MMBT2907A 1p sot23 TRANSISTOR 1P SOT23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P


    Original     		PDF OT-23 MMBT2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P


    Original     		PDF OT-23 MMBT2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors 3DK2222A SOT-23 TRANSISTOR NPN FEATURES y y 1. BASE Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 2.EMITTER 3.COLLECTOR MARKING: 1P1


    Original     		PDF OT-23 3DK2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz

    1p1 transistor

    Abstract: 3DK2222A MMBT2907ALT1
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors 3DK2222A TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907ALT1) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P1


    Original     		PDF OT-23 3DK2222A OT-23 MMBT2907ALT1) -55to 150mA 500mA 100MHz 1p1 transistor 3DK2222A MMBT2907ALT1

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P


    Original     		PDF OT-23 MMBT2222A OT-23 MMBT2907A) 150mA 500mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222ALT1 TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907ALT1) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P


    Original     		PDF OT-23 MMBT2222ALT1 OT-23 MMBT2907ALT1) -55to 150mA 500mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P


    Original     		PDF OT-23 MMBT2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz

    Transistor hFE CLASSIFICATION Marking CE

    Abstract: marking 1P sot-23 Application of MMBT2907A sot-23 1P F MMBT2222A MMBT2907A MARKING 1P
    Text: MMBT2222A TRANSISTOR NPN PRODUCT SUMMARY SOT-23 Plastic-Encapsulate Transistors SOT-23 FEATURES Epitaxial planar die construction Complementary PNP Type available (MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P MECHANCIAL DATA NA Pb-free; RoHS-compliant


    Original     		PDF MMBT2222A OT-23 OT-23 MMBT2907A) -55to Transistor hFE CLASSIFICATION Marking CE marking 1P sot-23 Application of MMBT2907A sot-23 1P F MMBT2222A MMBT2907A MARKING 1P

    marking 1p sot23

    Abstract: TRANSISTOR 1P SOT23 1p transistor sot23 1p transistor sot-23 1P F marking 1p transistor sot23 TRANSISTOR 1P Marking 1P 1P sot23 sot23 1p
    Text: MMBT2222A SOT-23 Transistor NPN SOT-23 1. BASE 2.EMITTER 3.COLLECTOR Features — Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) — MARKING: 1P Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF MMBT2222A OT-23 OT-23 MMBT2907A) -55to 150mA 500mA 100MHz 150mA marking 1p sot23 TRANSISTOR 1P SOT23 1p transistor sot23 1p transistor sot-23 1P F marking 1p transistor sot23 TRANSISTOR 1P Marking 1P 1P sot23 sot23 1p

    1p1 transistor

    Abstract: No abstract text available
    Text: 3DK2222A SOT-23 Transistor NPN SOT-23 1. BASE 2.EMITTER 3.COLLECTOR Features — Epitaxial planar die construction — Complementary PNP Type available(MMBT2907A) MARKING: 1P1 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF 3DK2222A OT-23 OT-23 MMBT2907A) -55to 150mA 500mA 100MHz 150mA 1p1 transistor

    MMBT2222AS

    Abstract: 1p transistor sot23 MMBT2222LT1
    Text: MMBT2222LT1 SOT-23 TRANSISTOR Description SOT-23 Dimensions Unit:mm Medium Power Amplifier. NPN Silicon Transistor. 2.3±0.2 2 1.9 Low collector saturation voltage enabling low voltage operation 1 3 0.124±0.10 0.97Ref. Complementary pair with . 0.5Ref. 0.4


    Original     		PDF MMBT2222LT1 OT-23 OT-23 97Ref. 600mA 38Ref. MMBT2222S MMBT2222AS MMBT2222AS 1p transistor sot23 MMBT2222LT1

    Untitled

    Abstract: No abstract text available
    Text: Small Signal Transistor MMBT2222A-HF NPN RoHS Device Halogen Free Features SOT-23 -NPN silicon epitaxial planar transistor for switching and amplifier application. 0.118(3.00) 0.110(2.80) 3 Mechanical data 0.055(1.40) 0.047(1.20) -Case: SOT-23, molded plastic.


    Original     		PDF MMBT2222A-HF OT-23 OT-23, MIL-STD-750, QW-JTR08

    Untitled

    Abstract: No abstract text available
    Text: Small Signal Transistor MMBT2222A-G NPN RoHS Device Features SOT-23 -NPN silicon epitaxial planar transistor for switching and amplifier application. 0.118(3.00) 0.110(2.80) 3 Mechanical data 0.055(1.40) 0.047(1.20) -Case: SOT-23, molded plastic. 1 2 0.079(2.00)


    Original     		PDF MMBT2222A-G OT-23 OT-23, MIL-STD-750, Collector-B00 QW-BTR30

    TRANSISTOR SMD MARKING CODE 1P

    Abstract: 1P smd transistor F318 transistor smd marking NA sot-23
    Text: SMD GENERAL PURPOSE TRANSISTOR NPN MMBT2222A SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data Case: SOT-23, Plastic Package Terminals: Weight: SOT-23 Solderable per MIL-STD-202G, Method 208


    Original     		PDF MMBT2222A OT-23, OT-23 MIL-STD-202G, TRANSISTOR SMD MARKING CODE 1P 1P smd transistor F318 transistor smd marking NA sot-23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222ALT1 TRANSISTOR NPN SOT-23 FEATURES 1. BASE 2. EMITTER Power dissipation 1. 0 W (Tamb=25℃) Collector current 0.6 A ICM: Collector-base voltage 75 V V(BR)CBO:


    Original     		PDF OT-23 MMBT2222ALT1 OT-23 150mA 500mA, 100MHz MMBT2222A

    MARKING CODE R1C

    Abstract: R2F SOT-23 R1H MARKING CODE 1T1 SOT-23 MMST3904 MMST8598 SOT-23 MARKING R2X SSTA29 R2C marking SOT-23 R2C
    Text: U.S. European Type Series SST U.S. / European SOT-23 • SMT (SC-59 / Japanese SOT-23) •Package style and dimensions (Unit SST SMT (U. S. /European SOT-23) (SC-59/Japanese SOT-23) 0 .9 5 1 °- * 1 .9 ± 0 .2 f> > 1.9± 0.2 0.45 ±0.1 0.95 0.95 ; 0.95 0.95


    OCR Scan     		PDF OT-23) SC-59 SC-59/Japanese -95-o GD1D47S 00104A0 MARKING CODE R1C R2F SOT-23 R1H MARKING CODE 1T1 SOT-23 MMST3904 MMST8598 SOT-23 MARKING R2X SSTA29 R2C marking SOT-23 R2C

    sot83

    Abstract: MARKING CODE R1C marking r2k IC marking R2k R2C marking marking r1c SOT23 R2P marking code R2C
    Text: U.S. European Type Series SST U.S. / European SOT-23 • SMT (SC-59 / Japanese SOT-23) •Package style and dimensions ,Unit : r SST SMT (U. & /European SOT-23) (SC-59/Japanese SOT-23) 2 0 .4 5 ± 0 .1 0 .9 5 1 0.8 + 0 . 1 ! (g)Frl t l °-95-o Î .0.95 Dimensions


    OCR Scan     		PDF OT-23) SC-59 SC-59/Japanese -95-o sot83 MARKING CODE R1C marking r2k IC marking R2k R2C marking marking r1c SOT23 R2P marking code R2C

    lt1435

    Abstract: No abstract text available
    Text: LintiAE TECHNOLOGY LT1460S3-5 SOT-23 M icropow er Series Reference in SOT-23 F€flTUR€S D6SCRIPTIOÍ1 • 3-Lead SOT-23 Package ■ Low Drift: 20p p m /C Max ■ High Accuracy: 0.2% Max The LT 1460S3-5 is a SOT-23 micropower series reference that combines high accuracy and low drift with low power


    OCR Scan     		PDF LT1460S3-5 OT-23) OT-23 1460S3-5 OT-23 LT1019 LT1027 LT1236 LT1634 lt1435

    SST4124

    Abstract: SST5086 SST5089 R2F SOT-23 marking c33 MMSTA70 SOT-23 R2C r1a SOT23 SSTA13 R2C marking
    Text: U.S. European Type Series SST U.S. / European SOT-23 • SMT (SC-59 / Japanese SOT-23) •Package style and dimensions (Unit SST SMT (U. S. /European SOT-23) (SC-59/Japanese SOT-23) 0.951°-* 1 .9± 0.2 f> > 1.9± 0.2 0 .4 5 ± 0 .1 0 .9 5 0.95 ;0 . 9 5 0 . 9 5


    OCR Scan     		PDF OT-23) SC-59 SC-59/Japanese -95-o GD1D47S No100mA 50MHz SST4124 SST5086 SST5089 R2F SOT-23 marking c33 MMSTA70 SOT-23 R2C r1a SOT23 SSTA13 R2C marking

    1ps to92

    Abstract: No abstract text available
    Text: LT1460S3-2.5 SOT-23 r j u n e TECHNOLOGY M icropow er Series Reference in SOT-23 F€OTUR€S D€SCRIPTIOfl • 3-Lead SOT-23 Package ■ Low Drift: 20p p m /C Max ■ High Accuracy: 0.2% Max The LT®1460S3-2.5 is a SOT-23 micropower series refer­ ence that combines high accuracy and low drift with low


    OCR Scan     		PDF LT1460S3-2 OT-23) OT-23 1460S3-2 OT-23 LT1019 LT1027 LT1236 LT1634 25ppm/ 1ps to92