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    SOT-23 MARKING PW Search Results

    SOT-23 MARKING PW Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT-23 MARKING PW Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sot-23 2L

    Abstract: No abstract text available
    Text: UTC MMBT5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc max =350mW *High current gain 2 1 APPLICATIONS 3 *Telephone Switching Circuit *Amplifier MARKING SOT-23


    Original     		PDF MMBT5401 -150V 350mW OT-23 QW-R206-011 sot-23 2L

    sot-23 Marking 2L

    Abstract: MMBT5401 sot23 marking 2l
    Text: UTC MMBT5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc max =350mW *High current gain 2 1 3 APPLICATIONS *Telephone Switching Circuit *Amplifier SOT-23 MARKING


    Original     		PDF MMBT5401 -150V 350mW OT-23 QW-R206-011 sot-23 Marking 2L MMBT5401 sot23 marking 2l

    Mosfet

    Abstract: 2N7002KB
    Text: 2N7002KB 60V N-Channel MOSFET Main Product Characteristics VDSS 60V RDS on 2Ω(max.) ID 0.3A SOT-23 Marking and Pin Schematic Diagram Assignment Features and Benefits   Advanced MOSFET process technology Special designed for PWM, load switching and


    Original     		PDF 2N7002KB OT-23 Mosfet 2N7002KB

    Mosfet

    Abstract: 2N7002KU
    Text: 2N7002KU 60V N-Channel MOSFET Main Product Characteristics VDSS 60V RDS on 3Ω(max.) ID 0.3A SOT-23 Marking and Pin Schematic Diagram Assignment Features and Benefits   Advanced MOSFET process technology Special designed for PWM, load switching and


    Original     		PDF 2N7002KU OT-23 Mosfet 2N7002KU

    MMBT5551A

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain . 2 1 3 MARKING G1 SOT-23 *Pb-free plating product number:MMBT5551L PIN CONFIGURATION


    Original     		PDF MMBT5551 OT-23 MMBT5551L MMBT5551-AE3-R MMBT5551L-AE3-R OT-23 QW-R206-010 MMBT5551A

    Mosfet

    Abstract: SSF2341E marking 2341E 2341E marking 4a sot23
    Text: SSF2341E 20V P-Channel MOSFET Main Product Characteristics VDSS -20V RDS on 37mΩ (typ.) ID -4A ① SOT-23 Marking and Pin Schematic Diagram Assignment Features and Benefits   Advanced MOSFET process technology Special designed for PWM, load switching and


    Original     		PDF SSF2341E OT-23 for2341E 2341E Mosfet SSF2341E marking 2341E 2341E marking 4a sot23

    MMBT5401

    Abstract: MMBT5401-AE3-R MMBT5401L MMBT5401L-AE3-R
    Text: UNISONIC TECHNOLOGIES CO., MMBT5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES 2 *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc max =350mW *High current gain 1 MARKING 3 2L SOT-23 *Pb-free plating product number:MMBT5401L


    Original     		PDF MMBT5401 -150V 350mW OT-23 MMBT5401L MMBT5401-AE3-R MMBT5401L-AE3-R QW-R206-011 MMBT5401 MMBT5401L MMBT5401L-AE3-R

    Mosfet

    Abstract: SSF3341 sot-23 Marking mosfet p-channel
    Text: SSF3341 30V P-Channel MOSFET Main Product Characteristics D VDSS -30V RDS on 42mΩ (typ.) ID -4.2A G S ① SOT-23 Marking and Pin Schematic Diagram Assignment Features and Benefits   Advanced MOSFET process technology Special designed for PWM, load switching and


    Original     		PDF SSF3341 OT-23 reliSF3341 Mosfet SSF3341 sot-23 Marking mosfet p-channel

    Mosfet

    Abstract: SSF3339
    Text: SSF3339 30V P-Channel MOSFET Main Product Characteristics D VDSS -30V RDS on 37mΩ (typ.) ID -4.1A G S ① SOT-23 Marking and Pin Schematic Diagram Assignment Features and Benefits   Advanced MOSFET process technology Special designed for PWM, load switching and


    Original     		PDF SSF3339 OT-23 reliSF3339 Mosfet SSF3339

    Mosfet

    Abstract: SSF2301 2301 marking sot-23
    Text: SSF2301 20V P-Channel MOSFET Main Product Characteristics D VDSS -20V RDS on 60mΩ (typ.) ID -3A G S ① SOT-23 Marking and Pin Schematic Diagram Assignment Features and Benefits   Advanced MOSFET process technology Special designed for PWM, load switching and


    Original     		PDF SSF2301 OT-23 reliabSSF2301 Mosfet SSF2301 2301 marking sot-23

    Amplifier transistor

    Abstract: No abstract text available
    Text: UTC MMBTA06/56 AMPLIFIER TRANSISTOR NPN MMBTA06 PNP MMBTA56 FEATURES *Collector-Emitter Voltage: VCEO=80V *Collector Dissipation: PD=350mW 3 1 MARKING MMBTA06 MMBTA56 2 2G 1G SOT-23 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS TA=25°C PARAMETER


    Original     		PDF MMBTA06/56 MMBTA06 MMBTA56 350mW OT-23 PARAMETEQW-R206-041 Amplifier transistor

    QW-R206-041

    Abstract: MARKING 1G TRANSISTOR
    Text: UTC MMBTA06/56 AMPLIFIER TRANSISTOR NPN MMBTA06 PNP MMBTA56 FEATURES *Collector-Emitter Voltage: VCEO=80V *Collector Dissipation: PD=350mW 3 1 MARKING MMBTA06 MMBTA56 2 2G 1G SOT-23 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS TA=25°C PARAMETER


    Original     		PDF MMBTA06/56 MMBTA06 MMBTA56 350mW OT-23 QW-R206-041 MARKING 1G TRANSISTOR

    MMBT3906 UTC

    Abstract: No abstract text available
    Text: UTC MMBT3906 PNP EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES *Collector-Emitter Voltage: VCEO=40V *Collector Dissipation: Pc max =350mW *Complementary to MMBT3904 2 1 MARKING 2A 3 SOT-23 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )


    Original     		PDF MMBT3906 350mW MMBT3904 OT-23 QW-R206-013 MMBT3906 UTC

    1df transistor

    Abstract: FJV42
    Text: FJV42 NPN High Voltage Transistor 3 2 1 SOT-23 Marking: 1DF 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter 350 V VCEO Collector-Emitter Voltage 350 V VEBO


    Original     		PDF FJV42 OT-23 FJV42 1df transistor

    mmbt3904 complementary

    Abstract: MMBT3904 MMBT3906 6030v
    Text: UTC MMBT3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES *Collector-Emitter Voltage: VCEO=40V *Collector Dissipation: Pc max =350mW *Complementary to MMBT3906 2 1 MARKING 3 1A SOT-23 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )


    Original     		PDF MMBT3904 350mW MMBT3906 OT-23 QW-R206-012 100MHz mmbt3904 complementary MMBT3904 MMBT3906 6030v

    Untitled

    Abstract: No abstract text available
    Text: UTC MMBT3906 PNP EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES *Collector-Emitter Voltage: VCEO=40V *Collector Dissipation: Pc max =350mW *Complementary to MMBT3904 2 1 MARKING 3 2A SOT-23 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )


    Original     		PDF MMBT3906 350mW MMBT3904 OT-23 QW-R206-013 -10mA -50mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: FJV42 NPN High Voltage Transistor 3 2 1 SOT-23 Marking: 1DF 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter 350 V VCEO Collector-Emitter Voltage 350 V VEBO


    Original     		PDF FJV42 OT-23 FJV42

    s72 sot 23

    Abstract: transistor marking s72 2N7019 2N7002 MARKING s72 2N7002 S72 SOT-23 s72 SOT23 Transistor s72 sot23 2n7002 transistor s72 S72 Transistor
    Text: N & P CHANNEL MOSFETS ENHANCEMENT MODE N CHANNEL SOT-23 Cont. D-S Drain Voltage Current Type Marking V max A max BS870 S70 60 0.25 2N7002 S72 60 0.25 *: Pulse test width 80µs, 1% duty factor. Pwr. Dispn. TC=25˚C W max 0.31 0.31 Gate Thr. Volt. VGS=VDS ID=ImA


    Original     		PDF BS870 2N7002 OT-23 BS850 22N7002 BS170 s72 sot 23 transistor marking s72 2N7019 2N7002 MARKING s72 2N7002 S72 SOT-23 s72 SOT23 Transistor s72 sot23 transistor s72 S72 Transistor

    Untitled

    Abstract: No abstract text available
    Text: Si2320DS New Product Vishay Siliconix N-Channel 200-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 200 7 @ VGS = 10 V "0.28 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2320DS (D0)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si2320DS O-236 OT-23) S-63640--Rev. 01-Nov

    Untitled

    Abstract: No abstract text available
    Text: Si2301DS Vishay Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V - 20 rDS(on) (W) ID (A) 0.130 @ VGS = - 4.5 V - 2.3 0.190 @ VGS = - 2.5 V - 1.9 TO-236 (SOT-23) G 1 3 S D Ordering Information: Si2301DS-T1 2 Top View Si2301DS (A1)* *Marking Code


    Original     		PDF Si2301DS O-236 OT-23) Si2301DS-T1 08-Apr-05

    A96V

    Abstract: Si2326DS
    Text: Si2326DS New Product Vishay Siliconix N-Channel 100-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 100 0.250 @ VGS = 10 V 1.5 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2326DS (D6)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si2326DS O-236 OT-23) S-2381--Rev. 23-Oct-00 A96V

    Si2320DS

    Abstract: No abstract text available
    Text: Si2320DS New Product Vishay Siliconix N-Channel 200-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 200 7 @ VGS = 10 V "0.28 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2320DS (D0)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si2320DS O-236 OT-23) 18-Jul-08

    BAV170

    Abstract: JXs sot
    Text: Silicon Low Leakage Diode Array BAV170 • Low Leakage applications • Medium speed switching times • Common cathode Type Marking O rdering code 8-m m tape Package BAV170 JXs Q62702-A920 SOT 23 Maximum Ratings D escription Symbol Reverse voltage VR BAV170


    OCR Scan     		PDF BAV170 Q62702-A920 BAV170 100ns JXs sot

    SMBD7000C

    Abstract: IRC 7000
    Text: Silicon Switching Diode Array SMBD 7000 • For high-speed sw itching applications • Connected in series Type Marking Ordering code for versions in bulk Ordering code for versions on 8-mm tape Package SMBD 7000 S5C upon request upon request SOT 23 Maximum ratings


    OCR Scan     		PDF