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    SOT-23 R25 Search Results

    SOT-23 R25 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT-23 R25 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    R222 smd

    Abstract: RA516-1 2007-000162 RA523-1 C627 SOT-23 smd R540 63MIL d516 gp SMD R618 SMD C548
    Text: - This Document can not be used without Samsung's authorization - 10 Schematic Material List 10-1 Mainboard Parts List CODE LOCATION CATALOG DESCRIPTION 0401-000191 D16 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP 0401-000191 D14 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP


    Original     		PDF CA-001175 BA41-00418A BA62-00194A BA62-00306A BA68-40005L 120OHM 143OHM/132MHZ 213OHM/390MHZ, R222 smd RA516-1 2007-000162 RA523-1 C627 SOT-23 smd R540 63MIL d516 gp SMD R618 SMD C548

    STR2550

    Abstract: STR1550
    Text: STR2550 High voltage fast-switching PNP power transistor Preliminary data Features • Miniature SOT-23 plastic package for surface mounting circuits ■ Tape and reel packaging ■ The NPN complementary type is STR1550 3 2 1 Applications ■ SOT-23 LED driving


    Original     		PDF STR2550 OT-23 STR1550 OT-23 R2550 STR2550 STR1550

    SOT R23

    Abstract: marking R24 2SC3356 SOT R25 r25 q
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES z Low noise amplifier at VHF, UHF and CATV band. z Low Noise and High Gain z High Power Gain 3. COLLECTOR


    Original     		PDF OT-23-3L OT-23-3L 2SC3356 width350s, SOT R23 marking R24 2SC3356 SOT R25 r25 q

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES z Low noise amplifier at VHF, UHF and CATV band. z Low Noise and High Gain z High Power Gain 3. COLLECTOR


    Original     		PDF OT-23-3L OT-23-3L 2SC3356

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR FEATURES 0.2 W (Tamb=25℃) 2. 80¡ À0. 05 0. 95¡ À0. 025 PCM: 1. 02 Power dissipation 0. 35 1. 9 Collector current


    Original     		PDF OT-23-3L OT-23-3L 2SC3356

    transistor R24

    Abstract: SOT R23 npn marking r25 marking r25 transistor marking r25 NPN 2sc3356 high power npn UHF transistor 2SC3356 R25 sot-23
    Text: 2SC3356 SOT-23-3L Transistor NPN SOT-23-3L 1. BASE 2. EMITTER 2.92 3. COLLECTOR 0.35 1.17 Features 2.80 — Low noise amplifier at VHF, UHF and CATV band. — Low Noise and High Gain — High Power Gain 1.60 0.15 1.90 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF 2SC3356 OT-23-3L OT-23-3L width350s, transistor R24 SOT R23 npn marking r25 marking r25 transistor marking r25 NPN 2sc3356 high power npn UHF transistor 2SC3356 R25 sot-23

    FH9014

    Abstract: FHT9018 FHT1815G FHT3356 FHT599 FHT63 FHT64 FHT807-16 FHT807-25 FHT817-16
    Text: SOT-23 三极管（SOT-23 TRANSISTORS） 型号 TYPE VCBO V VCEO V IC mA PD mW FHT20 FHT31 FHT63 FHT64 FHT599 FHT807-16 FHT807-25 FHT807-40 FHT817-16 FHT817-25 FHT817-40 FHT846A FHT846B FHT847A FHT847B FHT847C FHT848A FHT848B FHT848C FHT849A FHT849B FHT849C


    Original     		PDF OT-23 FHT20 FHT31 FHT63 FHT64 FHT599 FHT807-16 FHT807-25 FHT807-40 FH9014 FHT9018 FHT1815G FHT3356 FHT599 FHT63 FHT64 FHT807-16 FHT807-25 FHT817-16

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SC3356 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES *Low Noise and High Gain *High Power Gain 2 1 MARKING 3 R25 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS TA=25°C, unless otherwise specified PARAMETER


    Original     		PDF 2SC3356 OT-23 QW-R206-024

    2SC3356

    Abstract: marking r25 sot23 r25 marking NPN R25 QW-R206-024 2SC3356 R25 sot-23
    Text: UTC 2SC3356 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES *Low Noise and High Gain *High Power Gain 2 1 MARKING 3 R25 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS TA=25°C, unless otherwise specified PARAMETER


    Original     		PDF 2SC3356 OT-23 QW-R206-024 2SC3356 marking r25 sot23 r25 marking NPN R25 2SC3356 R25 sot-23

    Untitled

    Abstract: No abstract text available
    Text: FJV3105R FJV3105R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=10KΩ) • Complement to FJV4105R 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Marking


    Original     		PDF FJV3105R FJV4105R OT-23

    BC647

    Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
    Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23


    Original     		PDF MMBD4148 200MA OT-23 MBR0540 OD-123 1000MA DO-214AC B340A 5245B 225MW BC647 bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645

    77C7

    Abstract: 887c 1r12r
    Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23


    Original     		PDF

    marking r25

    Abstract: FJV3105R FJV4105R
    Text: FJV3105R FJV3105R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=10KΩ) • Complement to FJV4105R 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Marking


    Original     		PDF FJV3105R FJV4105R OT-23 marking r25 FJV3105R FJV4105R

    resistor cross reference

    Abstract: marking r25 sot23 FJV3105RMTF
    Text: FJV3105R FJV3105R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=10KΩ) • Complement to FJV4105R 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Marking


    Original     		PDF FJV3105R FJV4105R OT-23 FJV4105R OT-23 FJV3105RMTF resistor cross reference marking r25 sot23

    Untitled

    Abstract: No abstract text available
    Text: STR2550 High voltage fast-switching PNP power transistor Datasheet - production data Features • Excellent hFE linearity up to 50 mA • Miniature SOT-23 plastic package for surface mounting circuits 3 • Tape and reel packaging 2 • The NPN complementary type is STR1550


    Original     		PDF STR2550 OT-23 STR1550 OT-23 DocID022365

    samsung r540

    Abstract: Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535
    Text: - This Document can not be used without Samsung’s authorization - 10. Part List 1 System Board Main System LOCATION SEC CODE NAME SPECIFICATION QUANTITY 0401-000191 DIODE-SWITCHING MMBD4148,75V,200mA,SOT-23,TP 6 D512 0402-001024 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP


    Original     		PDF ZD500 QF500 RHU002N06 200MA OT-323 F820P 33x33mm 500MHz K4J52324QC 512Mbit samsung r540 Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535

    NTC 503 3950

    Abstract: No abstract text available
    Text: NTGM Series High Accuracy NTC Thermistors Features  Micro MELF glass package, saving space  Fits onto SOD 323/SOT 23 footprints  Fast response time  High reliability and high moisture proof  Wide range of operating temperature from -50℃ up to 300℃


    Original     		PDF 323/SOT B0/50, B25/50, B25/85 00ons 3850K 3950K B0/50 B25/50 B25/85 NTC 503 3950

    5C0A

    Abstract: AD1585BRTZ SOT-23 R2C SOT23 transistor R2C 3a0a transistor R1Z AD1582ARTZ AD1582 AD1582CRTZ-REEL7
    Text: a 2.5 V to 5.0 V Micropower, Precision Series Mode Voltage References AD1582/AD1583/AD1584/AD1585 FUNCTIONAL BLOCK DIAGRAM 3-Lead SOT-23 RT Suffix FEATURES Series Reference (2.5 V, 3 V, 4.096 V, 5 V) Low Quiescent Current: 70 �A max Current Output Capability: �5 mA


    Original     		PDF OT-23 AD158x AD1582/AD1583/AD1584/AD1585 OT-23 AD1582/ AD1583/ AD1584/ AD1585 AD1582 AD1583/AD1585 5C0A AD1585BRTZ SOT-23 R2C SOT23 transistor R2C 3a0a transistor R1Z AD1582ARTZ AD1582CRTZ-REEL7

    2SC3356 Application Note

    Abstract: 2SC3356 h 125 tam SOT R23 marking r25 sot23 r25 q 2SC3356 R25 sot-23
    Text: 2SC3356 NPN Silicon Plastic-Encapsulate Transistor Elektronische Bauelemente A suffix of "-C" specifies halogen & lead-free SOT-23 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 A


    Original     		PDF 2SC3356 OT-23 01-Jun-2002 2SC3356 Application Note 2SC3356 h 125 tam SOT R23 marking r25 sot23 r25 q 2SC3356 R25 sot-23

    Untitled

    Abstract: No abstract text available
    Text: 2SC3356 High-Frequency Amplifier Transistor NPN Silicon COLLECTOR 3 3 P b Lead Pb -Free 2 BASE 1 2 1 EMITTER FEATURES SOT-23 * Low noise amplifier at VHF, UHF and CATV band. * Low Noise and High Gain * High Power Gain MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF 2SC3356 OT-23 10-Jan-08 OT-23

    DS493

    Abstract: No abstract text available
    Text: Thi s Docum entcan notbe used wi thoutSamsung' s aut hori zati on. 11. Mai n System PartLi st CODE DESCRI PTI ON REFERENCE EA 3920501 j ack-usb-4p-mnt4,JACK-USB;-,-,-,-,- J505 J2501 J2502 3 0401-000191 di ode,DI ODE-SWI TCHI NG;MMBD4148,75V,200MA,SOT-23,TP


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SC3356 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 High power gain. 0.55 NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz +0.1 1.3-0.1 +0.1 2.4-0.1 Low noise and high gain. 0.4 3


    Original     		PDF 2SC3356 OT-23

    SMD transistor r24

    Abstract: marking r25 sot23 R25 SMD transistor SOT R23 SOT R25 R24 smd Transistor R25 smd R24 marking NPN R25 marking r25 NPN
    Text: Transistors SMD Type NPN Silicon Epitaxial Transistor 2SC4226 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low noise and high gain. 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 NF = 1.2 dB Typ. @VCE = 3V, IC = 7 mA, f = 1.0 GHz


    Original     		PDF 2SC4226 OT-23 SMD transistor r24 marking r25 sot23 R25 SMD transistor SOT R23 SOT R25 R24 smd Transistor R25 smd R24 marking NPN R25 marking r25 NPN

    2SC3356 SMD

    Abstract: marking r25 sot23 NPN R25 SOT R23 Transistor R25 smd 2SC335 r25 marking 2SC3356 R24 marking DATASHEET SMD R25
    Text: Transistors SMD Type NPN Silicon Epitaxial Transistor 2SC3356 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 High power gain. 0.55 NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz +0.1 1.3-0.1 +0.1 2.4-0.1 Low noise and high gain.


    Original     		PDF 2SC3356 OT-23 2SC3356 SMD marking r25 sot23 NPN R25 SOT R23 Transistor R25 smd 2SC335 r25 marking 2SC3356 R24 marking DATASHEET SMD R25