SOT-23-8 S11 Search Results

SOT-23-8 S11 Result Highlights (5)

Part	Manufacturer	Description
7UL2T125FK	Toshiba Electronic Devices & Storage Corporation	One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC
TC75S102F	Toshiba Electronic Devices & Storage Corporation	Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25
7UL2T126FK	Toshiba Electronic Devices & Storage Corporation	One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC
TCR2EF18	Toshiba Electronic Devices & Storage Corporation	LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV)
TCR2LF18	Toshiba Electronic Devices & Storage Corporation	LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV)

SOT-23-8 S11 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
transistor 4500 Abstract: MP4T6825 MP4T682500 MP4T682533 MP4T682535 MP4T682539 S21E S22E transistor r 606 j Text: Low Current 8 Volt, Low Noise High fT Silicon Transistor Features • • • • • • MP4T6825 Series SOT-23 Low Current Operation High fT 8 GHz Low Noise Figure with 1-5 mA Current Low Phase Noise Inexpensive Available on Tape and Reel Description The MP4T6825 series of low current silicon bipolar	Original	MP4T6825 OT-23 OT-143 MP4T682539 transistor 4500 MP4T682500 MP4T682533 MP4T682535 MP4T682539 S21E S22E transistor r 606 j	PDF
sot-23 marking 6C Abstract: transistor y21 sot-23 Text: ON Semiconductort JFET Transistor MMBFU310LT1 N−Channel ON Semiconductor Preferred Device MAXIMUM RATINGS 3 Rating Symbol Value Unit Drain−Source Voltage VDS 25 Vdc Gate−Source Voltage VGS 25 Vdc IG 10 mAdc Gate Current 1 2 CASE 318 −08, STYLE 10 SOT−23 TO −236AB	Original	MMBFU310LT1 236AB) sot-23 marking 6C transistor y21 sot-23	PDF
VK200 rfc Abstract: MMBFU310LT1 transistor y21 sot-23 vk200 rfc with 6 turns MVM010W U310 shock vk200 Text: ON Semiconductort JFET Transistor MMBFU310LT1 N–Channel ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage VGS 25 Vdc IG 10 mAdc Gate Current 3 1 THERMAL CHARACTERISTICS Characteristic	Original	MMBFU310LT1 236AB) r14525 MMBFU310LT1/D VK200 rfc MMBFU310LT1 transistor y21 sot-23 vk200 rfc with 6 turns MVM010W U310 shock vk200	PDF
MMBFU310LT1 Abstract: SOT-23 6C Text: ON Semiconductort JFET Transistor MMBFU310LT1 N–Channel ON Semiconductor Preferred Device MAXIMUM RATINGS 3 Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage VGS 25 Vdc IG 10 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556	Original	MMBFU310LT1 236AB) r14525 MMBFU310LT1/D MMBFU310LT1 SOT-23 6C	PDF
motorola U310 Abstract: shock vk200 vk200 choke MMBFU310LT1 MVM010W U310 transistor u310 marking C3 sot-23 variable trimmer bar SOT-23 Text: MOTOROLA Order this document by MMBFU310LT1/D SEMICONDUCTOR TECHNICAL DATA JFET Transistor N–Channel 2 SOURCE MMBFU310LT1 Motorola Preferred Device 3 GATE 1 DRAIN 3 MAXIMUM RATINGS Rating 1 Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage	Original	MMBFU310LT1/D MMBFU310LT1 236AB) MMBFU310LT1/D* motorola U310 shock vk200 vk200 choke MMBFU310LT1 MVM010W U310 transistor u310 marking C3 sot-23 variable trimmer bar SOT-23	PDF
VK200 rfc Abstract: MMBFJ309 MMBFJ309LT1 MMBFJ310 MMBFJ310LT1 MVM010W U310 shock vk200 SOT23 TRANSISTOR MARKING c3 JFET with Yos Text: ON Semiconductort JFET VHF/UHF Amplifier Transistor MMBFJ309LT1 MMBFJ310LT1 N–Channel MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage VGS 25 Vdc IG 10 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556 °C/W	Original	MMBFJ309LT1 MMBFJ310LT1 236AB) r14525 MMBFJ309LT1/D VK200 rfc MMBFJ309 MMBFJ309LT1 MMBFJ310 MMBFJ310LT1 MVM010W U310 shock vk200 SOT23 TRANSISTOR MARKING c3 JFET with Yos	PDF
motorola U310 Abstract: shock vk200 VK200 rfc MVM010 transistor u310 motorola 539 U310 MVM010W motorola 2443 vk200 rfc with 6 turns Text: MOTOROLA Order this document by MMBFJ309LT1/D SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Amplifier Transistor N–Channel MMBFJ309LT1 MMBFJ310LT1 2 SOURCE 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage	Original	MMBFJ309LT1/D MMBFJ309LT1 MMBFJ310LT1 236AB) motorola U310 shock vk200 VK200 rfc MVM010 transistor u310 motorola 539 U310 MVM010W motorola 2443 vk200 rfc with 6 turns	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MMBR911LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistors MMBR911LT1 MPS911 . . . designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic package, as well as	Original	MMBR911LT1/D MMBR911LT1 MPS911 226AA A/500 MMBR911LT1 MMBR911LT1/D*	PDF
6u sot-23 Abstract: s22 sot-23 MMBFJ309 MMBFJ309LT1 MMBFJ310 MMBFJ310LT1 transistor y21 sot-23 Text: ON Semiconductort JFET - VHF/UHF Amplifier Transistor MMBFJ309LT1 MMBFJ310LT1 N–Channel 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage VGS 25 Vdc IG 10 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556	Original	MMBFJ309LT1 MMBFJ310LT1 236AB) r14525 MMBFJ309LT1/D 6u sot-23 s22 sot-23 MMBFJ309 MMBFJ309LT1 MMBFJ310 MMBFJ310LT1 transistor y21 sot-23	PDF
MMBF5484LT1 Abstract: TO-236A Text: ON Semiconductort JFET Transistor MMBF5484LT1 N–Channel ON Semiconductor Preferred Device MAXIMUM RATINGS 3 Rating Symbol Value Unit VDG 25 Vdc VGS r 25 Vdc IG(f) 10 mAdc 200 2.8 mW mW/°C °C 1 Drain–Gate Voltage Reverse Gate–Source Voltage Forward Gate Current	Original	MMBF5484LT1 236AB) r14525 MMBF5484LT1/D MMBF5484LT1 TO-236A	PDF
MMBF4416LT1 Abstract: No abstract text available Text: ON Semiconductort JFET VHF/UHF Amplifier Transistor MMBF4416LT1 N–Channel ON Semiconductor Preferred Device MAXIMUM RATINGS 3 Rating Symbol Value Unit Drain–Source Voltage VDS 30 Vdc Drain–Gate Voltage VDG 30 Vdc Gate–Source Voltage VGS 30 Vdc IG 10	Original	MMBF4416LT1 236AB) r14525 MMBF4416LT1/D MMBF4416LT1	PDF
MMBF4416LT1 Abstract: No abstract text available Text: ON Semiconductort JFET VHF/UHF Amplifier Transistor MMBF4416LT1 N–Channel ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 30 Vdc Drain–Gate Voltage VDG 30 Vdc Gate–Source Voltage VGS 30 Vdc IG 10	Original	MMBF4416LT1 236AB) MMBF44spanish r14525 MMBF4416LT1/D MMBF4416LT1	PDF
MMBF5484LT1 Abstract: No abstract text available Text: ON Semiconductort JFET Transistor MMBF5484LT1 N–Channel ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Drain–Gate Voltage Symbol Value Unit VDG 25 Vdc VGS r 25 Vdc Forward Gate Current IG(f) 10 mAdc Continuous Device Dissipation at or Below	Original	MMBF5484LT1 236AB) r14525 MMBF5484LT1/D MMBF5484LT1	PDF
Diode Gfg 6f Abstract: MMBF5484LT1 Text: MOTOROLA Order this document by MMBF5484LT1/D SEMICONDUCTOR TECHNICAL DATA JFET Transistor N–Channel 2 SOURCE MMBF5484LT1 Motorola Preferred Device 3 GATE 1 DRAIN 3 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Forward Gate Current	Original	MMBF5484LT1/D MMBF5484LT1 MMBF5484LT1/D* Diode Gfg 6f MMBF5484LT1	PDF

Untitled Abstract: No abstract text available Text: ON Semiconductort JFET Transistor MMBF5484LT1 N−Channel ON Semiconductor Preferred Device MAXIMUM RATINGS 3 Rating Symbol Value Unit VDG 25 Vdc VGS r 25 Vdc IG(f) 10 mAdc 200 2.8 mW mW/°C °C 1 Drain−Gate Voltage Reverse Gate−Source Voltage Forward Gate Current	Original	MMBF5484LT1 236AB)	PDF
Untitled Abstract: No abstract text available Text: ON Semiconductort JFET VHF/UHF Amplifier Transistor MMBF4416LT1 N−Channel ON Semiconductor Preferred Device MAXIMUM RATINGS 3 Rating Symbol Value Unit Drain−Source Voltage VDS 30 Vdc Drain−Gate Voltage VDG 30 Vdc Gate−Source Voltage VGS 30 Vdc IG 10	Original	MMBF4416LT1 236AB)	PDF
MMBF4416LT1 Abstract: ON932 ON732 marking gfg 6f Text: MOTOROLA Order this document by MMBF4416LT1/D SEMICONDUCTOR TECHNICAL DATA JFET MMBF4416LT1 VHF/UHF Amplifier Transistor N–Channel Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDS	Original	MMBF4416LT1/D MMBF4416LT1 236AB) MMBF4416LT1/D* MMBF4416LT1 ON932 ON732 marking gfg 6f	PDF
MRF5711LT1 Abstract: MMBR571LT1 MRF571 11608A ZO 103 MA 75 603 Text: MOTOROLA Order this document by MMBR571LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistors MMBR571LT1 MRF5711LT1 Designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic packages. This	Original	MMBR571LT1/D MMBR571LT1 MRF5711LT1 MRF5711LT1, MRF571) A/500 MMBR571LT1) MRF5711LT1) MMBR571LT1 MRF5711LT1 MRF571 11608A ZO 103 MA 75 603	PDF
sot-23 marking 113 Abstract: sot-23 MARKING GU MMBR571L MRF5711LT1 SF-11N MMBR571LT1 MRF571 11608a Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MMBR571LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR571LT1 MRF5711LT1 Designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic packages. This	Original	MMBR571LT1/D MMBR571LT1 MRF5711LT1 MRF5711LT1, MRF571) A/500 MMBR571LT1) MRF5711LT1) MMBR571LT1 sot-23 marking 113 sot-23 MARKING GU MMBR571L MRF5711LT1 SF-11N MRF571 11608a	PDF
2x062h Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062 Text: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1	Original	ZMM22 ZMM24 ZMM27 ZMM43 ZMM47 2x062h gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062	PDF
CBF493S Abstract: BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further	Original	DL126/D Nov-2001 r14525 DL126/D CBF493S BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ	PDF
TRANSISTOR AH-16 Abstract: TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601 Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further	Original	DL126/D Nov-2001 r14525 DL126 TRANSISTOR AH-16 TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601	PDF
marking 513 SOD-323 Abstract: transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256 Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further	Original	DL126/D Nov-2001 r14525 DL126/D marking 513 SOD-323 transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256	PDF
transistor npn c 6073 Abstract: 433 SOT-23 transistor npn d 2078 944 1L2 NE68139 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fx= 8 GHz • LOW NOISE FIGURE: 1,2dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB AT 2 GHz 00 CHIP 35 (MICRO-X) 33 (SOT 23 STYLE) 39 (SOT 143 STYLE)	OCR Scan	NE681 OT-23) transistor npn c 6073 433 SOT-23 transistor npn d 2078 944 1L2 NE68139	PDF

SOT-23-8 S11 Search Results

SOT-23-8 S11 Result Highlights (5)

SOT-23-8 S11 Datasheets Context Search

transistor 4500

sot-23 marking 6C

VK200 rfc

MMBFU310LT1

motorola U310

VK200 rfc

motorola U310

Untitled

6u sot-23

MMBF5484LT1

MMBF4416LT1

MMBF4416LT1

MMBF5484LT1

Diode Gfg 6f

Untitled

Untitled

MMBF4416LT1

MRF5711LT1

sot-23 marking 113

2x062h

CBF493S

TRANSISTOR AH-16

marking 513 SOD-323

transistor npn c 6073