Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SOT-363 702 Search Results

    SOT-363 702 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT-363 702 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    702E

    Abstract: MARKING 5F SOT363 MOSFET N SOT-23 MOSFET SOT-23 2N7002 SOT-23 transistor 702E sot-23 marking E sot-23 marking 113 MARKING ZT SOT23 MARKING ZT
    Text: E L E C T R O N I C Device Marking of Surface Mount MOSFET July 2007 /Rev. 1 Part Number Package Marking 2N7002E SOT-323 702E SRT84W SOT-323 AW 2N7002S SOT-363 702S SRT84S SOT-363 VS 2N7002 SOT-23 7002 2N7002ES SOT-23 PK1 SRT100 SOT-23 T100 SRT170 SOT-23 AT


    Original     		PDF 2N7002E OT-323 SRT84W 2N7002S OT-363 SRT84S 2N7002 OT-23 702E MARKING 5F SOT363 MOSFET N SOT-23 MOSFET SOT-23 2N7002 SOT-23 transistor 702E sot-23 marking E sot-23 marking 113 MARKING ZT SOT23 MARKING ZT

    2N7002SPT

    Abstract: 702S MARKING 702S
    Text: CHENMKO ENTERPRISE CO.,LTD 2N7002SPT SURFACE MOUNT Dual N-Channel Enhancement MOS FET VOLTAGE 60 Volts CURRENT 0.250 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. FEATURE SC-88/SOT-363 * Small surface mounting type. SC-88/SOT-363


    Original     		PDF 2N7002SPT SC-88/SOT-363 SC-88/SOT-363) 2N7002SPT 702S MARKING 702S

    2N7002S

    Abstract: sot-363 Marking G1 sot-363 marking DS
    Text: CHENMKO ENTERPRISE CO.,LTD 2N7002S SURFACE MOUNT Dual N-Channel Enhancement MOS FET VOLTAGE 60 Volts CURRENT 0.250 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. FEATURE SC-88/SOT-363 * Small surface mounting type. SC-88/SOT-363


    Original     		PDF 2N7002S SC-88/SOT-363 SC-88/SOT-363) 2N7002S sot-363 Marking G1 sot-363 marking DS

    S2N7002DW

    Abstract: MosFET
    Text: S2N7002DW 115mA, 60V Dual N-Channel MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free SOT-363 MECHANICAL DATA     Case: SOT-363，Molded Plastic. Case Material-UL Flammability Rating 94V-0


    Original     		PDF S2N7002DW 115mA, OT-363 OT-363ï MIL-STD-202, 19-May-2011 S2N7002DW MosFET

    MARKING GA SOT-363

    Abstract: 22PF 2N7002DW
    Text: 2N7002DW Dual N-Channel MOSFET 3 2 6 5 1 Features: *Low On-Resistance : 7.5 Ω *Low Input Capacitance: 22PF *Low Out put Capacitance : 11PF *Low Threshole :1 .5V TYE *Fast Switching Speed : 11ns 1 4 5 2 4 3 SOT-363(SC-88) 6 Mechanical Data: *Case: SOT-363, Molded Plastic


    Original     		PDF 2N7002DW OT-363 SC-88) OT-363, MIL-STD-202, 500mA MARKING GA SOT-363 22PF 2N7002DW

    sot363

    Abstract: SOT-363 662 BSS84DW-13-F AZ23C20W sot-363 651 sot-363 702 MMBZ5237BTS bzx84c5v1t sot-523 mmdt2227
    Text: PRODUCT CHANGE NOTICE Contact Date: June 29, 2007 Implementation Date: October 1, 2007 Alert Category: Discrete Semiconductor DCS/PCN-1078 Rev 1 Alert Type: PCN #: Encapsulate Change PCN #: 1078, Rev 1 TITLE Conversion of SOT-363, SOT-523, SOT-563, SC59 and SC70 Packages to Green Encapsulate molding compound


    Original     		PDF DCS/PCN-1078 OT-363, OT-523, OT-563, halogC20V8-7 TLC363C20V8-7-F TLC363C5V5-13 TLC363C5V5-7 TLC363C5V5-7-F TLC363C6V4-13 sot363 SOT-363 662 BSS84DW-13-F AZ23C20W sot-363 651 sot-363 702 MMBZ5237BTS bzx84c5v1t sot-523 mmdt2227

    sot-363 702

    Abstract: MARKING CODE 702 2N7002DW SC70-6L IDS500 2N7002DW-T 2N7002DW-T/R7
    Text: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE MOSFETS This space-efficient device contains two electrically-isolated N-Channel enhancement-mode MOSFETs. It comes in a very small SOT-363 SC70-6L package. This device is ideal for portable applications where board space is


    Original     		PDF 2N7002DW OT-363 SC70-6L) OT-363 2N7002DW T/R13 sot-363 702 MARKING CODE 702 SC70-6L IDS500 2N7002DW-T 2N7002DW-T/R7

    Mosfet

    Abstract: 2N7002KG8 sot-363 702
    Text: 2N7002KG8 60V MOSFET Main Product Characteristics VDSS 60V RDS on 7.5ohm(max.) ID A SOT-363 Schematic Diagram Features and Benefits       Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications


    Original     		PDF 2N7002KG8 OT-363 Mosfet 2N7002KG8 sot-363 702

    Untitled

    Abstract: No abstract text available
    Text: S2N7002DW 115mA, 60V Dual N-Channel MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free SOT-363 FEATURES      A E Low on-Resistance：7.5 Ω Low Input Capacitance：22 PF Low Out Put Capacitance：11 PF


    Original     		PDF S2N7002DW 115mA, OT-363 OT-363ï MIL-STD-202, 2N7002DW 26-Jul-2010

    D02A

    Abstract: 2N7002DW S2N7002DW
    Text: S2N7002DW 115mA, 60V Dual N-Channel MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free SOT-363 FEATURES      A E Low on-Resistance：7.5 Ω Low Input Capacitance：22 PF Low Out Put Capacitance：11 PF


    Original     		PDF S2N7002DW 115mA, OT-363 Capacitance22 Capacitance11 Speed11 2N7002DW OT-363Molded MIL-STD-202, 26-Jul-2010 D02A S2N7002DW

    D02A

    Abstract: sot-363 702 2N7002DW
    Text: 2N7002DW 115mA, 60V Dual N-Channel MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free SOT-363 FEATURES      A E Low on-Resistance：7.5 Ω Low Input Capacitance：22 PF Low Out Put Capacitance：11 PF


    Original     		PDF 2N7002DW 115mA, OT-363 Capacitance22 Capacitance11 Speed11 OT-363Molded MIL-STD-202, 2N7002DW 05-Jul-2010 D02A sot-363 702

    2n7002kdW

    Abstract: No abstract text available
    Text: 2N7002KDW 60V ESD Protected N-Channel Enhancement Mode MOSFET RDS ON , VGS@10V, IDS@500mA=2Ω RDS(ON), VGS@4.5V, IDS@200mA=3Ω SOT-363 FEATURES • • • • • • Advanced Trench Process Technology Ultra Low On Resistance : 2Ω Fast Switching Speed : 20ns


    Original     		PDF 2N7002KDW 500mA 200mA OT-363 2002/95/EC OT-363 MIL-STD-750, 200mA 2n7002kdW

    Untitled

    Abstract: No abstract text available
    Text: 2N7002DW Dual N-Channel MOSFET 6 5 1 Features: * We declare that the material of product are Halogen Free and compliance with RoHS requirements. * ESD Protected:1000V 2 4 3 SOT-363 SC-88 3 2 1 D2 G1 S1 S2 G2 D1 4 5 6 Maximum Ratings (TA=25 C Unless Otherwise Specified)


    Original     		PDF 2N7002DW OT-363 SC-88) 13-May-2011 OT-363

    LTA 702 N

    Abstract: MARKING GA SOT-363 sot-363 702 marking 702 MARKING TE SOT363
    Text: 2N7002DW 60V N-Channel Enhancement Mode MOSFET SOT-363 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=5Ω 0.087(2.20) 0.074(1.90) • Advanced Trench Process Technology 0.018(0.45) 0.006(0.15) • RDS(ON), VGS@4.5V,IDS@75mA=7.5Ω 0.010(0.25) • High Density Cell Design For Ultra Low On-Resistance


    Original     		PDF 2N7002DW 500mA OT-363 OT-363 MIL-STD-750 006grams Chara63 LTA 702 N MARKING GA SOT-363 sot-363 702 marking 702 MARKING TE SOT363

    2N3906 Darlington transistor

    Abstract: BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212
    Text: CHAPTER 1 Selector Guide http://onsemi.com 5 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11


    Original     		PDF M1MA151AT1 M1MA151KT1 M1MA152AT1 M1MA152KT1 M1MA151WAT1 M1MA151WKT1 M1MA152WAT1 M1MA152WKT1 BAS16WT1 M1MA141KT1 2N3906 Darlington transistor BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212

    BC327 BC337 noise figure

    Abstract: BC337 Transistor BC307b MPS5172 "cross-reference" BC237 BC307 BC212
    Text: CHAPTER 1 Selector Guide http://onsemi.com 5 http://onsemi.com 6 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11


    Original     		PDF M1MA151AT1 M1MA151KT1 M1MA152AT1 M1MA152KT1 M1MA151WAT1 M1MA151WKT1 M1MA152WAT1 M1MA152WKT1 BAS16WT1 M1MA141KT1 BC327 BC337 noise figure BC337 Transistor BC307b MPS5172 "cross-reference" BC237 BC307 BC212

    BC547 sot package sot-23

    Abstract: BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package
    Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the


    Original     		PDF MDC5000T1 MDC5001T1 MDC3105LT1 BC547 sot package sot-23 BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package

    08390

    Abstract: LTC1090 8736
    Text: RELIABILITY DATA LTC1090 / 91 / 92 / 93 / 94 / 95 / 99 / 1283 8/21/2006 • OPERATING LIFE TEST PACKAGE TYPE SAMPLE SIZE OLDEST DATE CODE CERDIP PLASTIC DIP SOIC/SOT/MSOP NEWEST DATE CODE 648 8701 2,502 8701 63 9234 3,213 • HIGHLY ACCELERATED STRESS TEST AT +131°C/85%RH


    Original     		PDF LTC1090 00-03-6209B. 08390 8736

    L2N7002DW1T1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFEO 115 mAmps, 60 Volts N–Channel SOT–363 L2N7002DW1T1G/T3G • Pb−Free Package is Available. MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDSS 60 Vdc Drain−Gate Voltage RGS = 1.0 MW VDGR


    Original     		PDF L2N7002DW1T1G/T3G 195mm 150mm 3000PCS/Reel 8000PCS/Reel OT-723 OD-723) 10Reel/Inner 30KPCS/Inner L2N7002DW1T1G

    sot-363 702

    Abstract: No abstract text available
    Text: NTJS3151P Trench Power MOSFET 12 V, 3.3 A, Single P−Channel, ESD Protected SC−88 Features • • • • Leading Trench Technology for Low RDS ON Extending Battery Life SC−88 Small Outline (2x2 mm, SC70−6 Equivalent) Gate Diodes for ESD Protection


    Original     		PDF NTJS3151P SC-88 SC-88 SC70-6 sot-363 702

    MPSW45A replacement

    Abstract: MPSW45 equivalent BF245 application note BC237 alternative bipolar transistors book Characteristic curve BC107
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt Darlington Transistors NPN Silicon MPSW45 MPSW45A* COLLECTOR 3 BASE 2 *Motorola Preferred Device EMITTER 1 1 MAXIMUM RATINGS 2 Rating Symbol MPSW45 MPSW45A Unit Collector – Emitter Voltage VCES 40 50 Vdc Collector – Base Voltage


    Original     		PDF MPSW45 MPSW45A* MPSW45A 226AE) Ambien218A MSC1621T1 MSC2404 MSD1819A MV1620 MPSW45A replacement MPSW45 equivalent BF245 application note BC237 alternative bipolar transistors book Characteristic curve BC107

    2N3819 fet

    Abstract: BC237
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel Enhancement 2N7002LT1 3 DRAIN Motorola Preferred Device 1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ


    Original     		PDF 2N7002LT1 236AB) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2N3819 fet BC237

    BC337 BC547

    Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
    Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the


    Original     		PDF MDC5000T1 MDC3105LT1 BC337 BC547 MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1G N–Channel SOT–23 3 • Pb−Free Package is Available. 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ


    Original     		PDF L2N7002LT1G 236AB)