Untitled
Abstract: No abstract text available
Text: PMPB15XP 12 V, single P-channel Trench MOSFET 19 July 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
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PMPB15XP
DFN2020MD-6
OT1220)
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Untitled
Abstract: No abstract text available
Text: DF N 20 20 MD -6 PMPB40SNA 60 V N-channel Trench MOSFET 2 July 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
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PMPB40SNA
DFN2020MD-6
OT1220)
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: DF N 20 20 MD -6 PMPB85ENEA 60 V, single N-channel Trench MOSFET 19 December 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
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PMPB85ENEA
DFN2020MD-6
OT1220)
AEC-Q101
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marking code 1s
Abstract: No abstract text available
Text: PMPB33XP 20 V, single P-channel Trench MOSFET 5 September 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
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PMPB33XP
DFN2020MD-6
OT1220)
marking code 1s
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Untitled
Abstract: No abstract text available
Text: DF N 20 20 MD -6 NX2020P1 30 V, single P-channel Trench MOSFET 22 January 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
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NX2020P1
DFN2020MD-6
OT1220)
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Untitled
Abstract: No abstract text available
Text: 0' SOT1220 ' 1 DFN2020MD-6; reel pack; standard product orientation; 12NC ending 115 Rev. 2 — 19 February 2013 Packing information 1. Packing method Printed plano box Barcode label Reel Tape QA Seal Preprinted ESD warning PQ-label permanent) Circular sprocket holes opposite the
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OT1220
DFN2020MD-6;
001aak603
DFN2020
OT1220
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Untitled
Abstract: No abstract text available
Text: PMPB13XNE 30 V, single N-channel Trench MOSFET 30 November 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
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PMPB13XNE
DFN2020MD-6
OT1220)
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Untitled
Abstract: No abstract text available
Text: DF N 20 20 MD -6 PMPB40SNA 60 V N-channel Trench MOSFET 29 October 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
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PMPB40SNA
DFN2020MD-6
OT1220)
AEC-Q101
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marking code 1f
Abstract: NXP SMD mosfet MARKING CODE
Text: PMPB12UN 20 V single N-channel Trench MOSFET 6 July 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
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PMPB12UN
DFN2020MD-6
OT1220)
marking code 1f
NXP SMD mosfet MARKING CODE
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TRANSISTOR SMD MARKING CODE 1P
Abstract: smd transistor marking 1p smd TRANSISTOR code marking 1P
Text: PMPB33XN 30 V single N-channel Trench MOSFET 6 July 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
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PMPB33XN
DFN2020MD-6
OT1220)
TRANSISTOR SMD MARKING CODE 1P
smd transistor marking 1p
smd TRANSISTOR code marking 1P
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MOSFET TRANSISTOR SMD MARKING CODE A1
Abstract: MOSFET TRANSISTOR SMD MARKING CODE 11
Text: PMPB20UN 20 V, single N-channel Trench MOSFET 12 September 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
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PMPB20UN
DFN2020MD-6
OT1220)
MOSFET TRANSISTOR SMD MARKING CODE A1
MOSFET TRANSISTOR SMD MARKING CODE 11
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Untitled
Abstract: No abstract text available
Text: PMPB48EP 30 V, single P-channel Trench MOSFET 10 September 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
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PMPB48EP
DFN2020MD-6
OT1220)
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Untitled
Abstract: No abstract text available
Text: DF N 20 20 MD -6 NX2020N2 30 V, N-channel Trench MOSFET 20 January 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
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NX2020N2
DFN2020MD-6
OT1220)
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Untitled
Abstract: No abstract text available
Text: 0' SOT1220 ' 1 DFN2020MD-6; Tape reel SMD; reversed product orientation 12NC ending 125 Rev. 1 — 4 February 2013 Packing information 1. Packing method Printed plano box Barcode label Reel Tape QA Seal Preprinted ESD warning PQ-label permanent)
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OT1220
DFN2020MD-6;
001aak603
DFN20
OT1220
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Untitled
Abstract: No abstract text available
Text: PMPB47XP 30 V, single P-channel Trench MOSFET 5 December 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
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PMPB47XP
DFN2020MD-6
OT1220)
Quic11
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PMPB15XP,115
Abstract: No abstract text available
Text: PMPB15XP 12 V, single P-channel Trench MOSFET 22 November 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
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PMPB15XP
DFN2020MD-6
OT1220)
PMPB15XP,115
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Untitled
Abstract: No abstract text available
Text: PMPB29XPE 20 V, single P-channel Trench MOSFET 5 December 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
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PMPB29XPE
DFN2020MD-6
OT1220)
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Untitled
Abstract: No abstract text available
Text: DF N 20 20 MD -6 PMPB215ENEA 80 V, single N-channel Trench MOSFET 18 December 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
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PMPB215ENEA
DFN2020MD-6
OT1220)
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: DF N 20 20 MD -6 PMPB11EN 30 V N-channel Trench MOSFET 14 January 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
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PMPB11EN
DFN2020MD-6
OT1220)
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DFN2020MD-6
Abstract: No abstract text available
Text: Reflow soldering footprint Footprint information for reflow soldering of DFN2020MD-6 package 0.33 6x SOT1220 0.76 0.43 (6×) 0.66 0.53 (6×) 0.56 0.25 0.35 0.45 0.775 0.65 2.06 0.285 1.25 1.35 0.35 (6×) 1.05 0.25 (6×) 0.65 0.45 (6×) 0.9 1.1 1.2 0.935
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DFN2020MD-6
OT1220
sot1220
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sot1220
Abstract: LPY1
Text: Package outline DFN2020MD-6: plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals; body 2 x 2 x 0.65 mm SOT1220 8x pin 1 index area A B E X D A A1 detail X solderable lead end protrusion max. 0.02 mm (6×) C Lp E2 J1 D2 3 4 2
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DFN2020MD-6:
OT1220
OT1220
sot12204
sot1220
LPY1
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PMPB27EP
Abstract: MARKING CODE 1V TRANSISTOR SMD MARKING CODE 1v max10029
Text: PMPB27EP 30 V, single P-channel Trench MOSFET 10 September 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
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PMPB27EP
DFN2020MD-6
OT1220)
PMPB27EP
MARKING CODE 1V
TRANSISTOR SMD MARKING CODE 1v
max10029
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marking code 1L
Abstract: TRANSISTOR SMD MARKING CODE 1l
Text: PMPB16XN 30 V, single N-channel Trench MOSFET 20 September 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
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PMPB16XN
DFN2020MD-6
OT1220)
marking code 1L
TRANSISTOR SMD MARKING CODE 1l
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Untitled
Abstract: No abstract text available
Text: MD -6 PMPB11EN DF N2 020 30 V N-channel Trench MOSFET Rev. 1 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench
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PMPB11EN
DFN2020MD-6
OT1220)
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