1SV70
Abstract: BIC703M
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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Abstract: BB302M
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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BB301M
Abstract: No abstract text available
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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BB502M
Abstract: DSA003644
Text: BB502M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-809C Z 4th. Edition Mar. 2001 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz
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BB502M
ADE-208-809C
200pF,
OT-143Rmod)
BB502M
DSA003644
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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BB501M
Abstract: REJ03G0831-0600
Text: BB501M Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G0831-0600 Previous ADE-208-700D Rev.6.00 Aug.10.2005 Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise;
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BB501M
REJ03G0831-0600
ADE-208-700D)
200pF,
OT-143Rmod)
PLSP0004ZA-A
BB501M
REJ03G0831-0600
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BB501M
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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BIC702M
Abstract: 1SV70 MARKING CODE l3 monolithic amplifier
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet BB504M R07DS0286EJ0800 Previous: REJ03G0837-0700 Rev.8.00 Mar 28, 2011 Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.0 dB typ. at f = 200 MHz, NF = 1.75 dB typ. at f =900 MHz
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BB504M
R07DS0286EJ0800
REJ03G0837-0700)
OT-143Rmod)
PLSP0004ZA-A
BB504M
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BB502M
Abstract: K3024
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Renesas variable capacitance diode marking code A2
Abstract: k1510 BB101M sot143rmod
Text: BB101M Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G0822-0300 Previous ADE-208-504A Rev.3.00 Aug.10.2005 Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz)
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BB101M
REJ03G0822-0300
ADE-208-504A)
200pF,
OT-143Rmod)
PLSP0004ZA-A
BB101M
Renesas variable capacitance diode marking code A2
k1510
sot143rmod
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1SV70
Abstract: BB305M
Text: BB305M Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier REJ03G0829-0600 Previous ADE-208-607D Rev.6.00 Aug.10.2005 Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Superior cross modulation characteristics.
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BB305M
REJ03G0829-0600
ADE-208-607D)
200pF,
OT-143Rmod)
PLSP0004ZA-A
BB305M
1SV70
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BB301M
Abstract: No abstract text available
Text: BB301M Built in Biasing Circuit MOS FET IC VHF RF Amplifier REJ03G0824-0300 Previous ADE-208-506A Rev.3.00 Aug.10.2005 Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz)
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BB301M
REJ03G0824-0300
ADE-208-506A)
200pF,
OT-143Rmod)
PLSP0004ZA-A
BB301M
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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1SV70
Abstract: BIC702M
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet BB502M R07DS0284EJ0600 Previous: REJ03G0833-0500 Rev.6.00 Mar 28, 2011 Built in Biasing Circuit MOS FET IC UHF RF Amplifier Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz
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BB502M
R07DS0284EJ0600
REJ03G0833-0500)
200pF,
OT-143Rmod)
PLSP0004ZA-A
BB502M
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BB102M
Abstract: BB302M DSA003642
Text: BB102M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-587A Z 2nd. Edition Mar. 2001 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz) • Withstanding to ESD;
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BB102M
ADE-208-587A
200pF,
OT-143Rmod)
BB302M
BB102M
DSA003642
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BB301M
Abstract: DSA003642
Text: BB301M Build in Biasing Circuit MOS FET IC VHF RF Amplifier ADE-208-506A Z 2nd. Edition Mar. 2001 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz) • Withstanding to ESD;
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BB301M
ADE-208-506A
200pF,
OT-143Rmod)
BB301M
DSA003642
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diode MARKING CODE 917
Abstract: 1SV70 BIC703M L1103 21l4 sot143rmod DSA003645
Text: BIC703M Bias Controlled Monolithic IC VHF/UHF RF Amplifier ADE-208-984D Z 5th. Edition Mar. 2001 Features • Bias Controlled Monolithic IC (No external DC biasing voltage on gate1.); To reduce using parts cost & PC board space. • High |yfs| ; |yfs| = 29 mS typ. ( f = 1kHz)
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BIC703M
ADE-208-984D
200pF,
OT-143Rmod)
BIC703M
diode MARKING CODE 917
1SV70
L1103
21l4
sot143rmod
DSA003645
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BB503M
Abstract: ADE-208-811C DSA003644
Text: BB503M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-811C Z 4th. Edition Mar. 2001 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.8 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz
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BB503M
ADE-208-811C
200pF,
OT-143Rmod)
BB503M
ADE-208-811C
DSA003644
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572B
Abstract: BB302M
Text: BB302M Built in Biasing Circuit MOS FET IC VHF RF Amplifier REJ03G0825-0400 Previous ADE-208-572B Rev.4.00 Aug.10.2005 Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.7 dB typ. at f = 200 MHz)
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BB302M
REJ03G0825-0400
ADE-208-572B)
200pF,
OT-143Rmod)
PLSP0004ZA-A
BB302M
572B
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1SV70
Abstract: BB304M
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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Original
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BB502M
Abstract: No abstract text available
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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