SOT171 OUTLINE Search Results

SOT171 OUTLINE Result Highlights (5)

Part	Manufacturer	Description
TPH9R00CQH	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N)
DF2B5M4ASL	Toshiba Electronic Devices & Storage Corporation	TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2)
7UL2T125FK	Toshiba Electronic Devices & Storage Corporation	One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC
TC75S102F	Toshiba Electronic Devices & Storage Corporation	Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25
7UL2T126FK	Toshiba Electronic Devices & Storage Corporation	One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC

SOT171 OUTLINE Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BLV97CE Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV97CE UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor BLV97CE FEATURES DESCRIPTION • Internal input matching to achieve high power gain NPN silicon planar epitaxial transistor in a SOT171	Original	BLV97CE OT171 BLV97CE	PDF
BLV97CE Abstract: No abstract text available Text: , One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. UHF power transistor BLV97CE FEATURES DESCRIPTION • Internal input matching to achieve high power gain NPN silicon planar epitaxial transistor in a SOT171	Original	BLV97CE OT171 MDA443 OT171A BLV97CE	PDF
xl 6009 Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV920 UHF power transistor Product specification File under Discrete Semiconductors, SC08a Philips Semiconductors 1995 Apr 10 Philips Semiconductors Product specification UHF power transistor BLV920 FEATURES DESCRIPTION	Original	BLV920 SC08a BLV920 OT171 SCD38 123052/1500/01/pp12 xl 6009	PDF
xl 6009 Abstract: MLC660 MLC662 L6 PHILIPS 4894 BLV910 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV910 UHF power transistor Product specification Philips Semiconductors 1995 Apr 11 Philips Semiconductors Product specification UHF power transistor BLV910 FEATURES DESCRIPTION • Internal input matching to achieve high power gain and	Original	BLV910 OT171 SCD38 123052/1500/01/pp12 xl 6009 MLC660 MLC662 L6 PHILIPS 4894 BLV910	PDF
film dielectric trimmer PTFE Abstract: 2222 031 capacitor philips 2222 424 BLV934 xl 6009 gp 722 MLC679 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV934 UHF power transistor Product specification Philips Semiconductors 1995 Apr 11 Philips Semiconductors Product specification UHF power transistor BLV934 FEATURES DESCRIPTION • Internal input matching to achieve high power gain and	Original	BLV934 OT171 SCD38 123052/1500/01/pp12 film dielectric trimmer PTFE 2222 031 capacitor philips 2222 424 BLV934 xl 6009 gp 722 MLC679	PDF
mda540 Abstract: BLV100 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV100 UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor FEATURES BLV100 PIN CONFIGURATION • Internal input matching to achieve high power gain • Ballasting resistors for an optimum	Original	BLV100 OT171 mda540 BLV100	PDF
MRA250 Abstract: BLF522 MRA990 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF522 UHF power MOS transistor Product specification September 1992 Philips Semiconductors Product specification UHF power MOS transistor FEATURES BLF522 PIN CONFIGURATION • High power gain • Easy power control • Gold metallization	Original	BLF522 MBB072 OT171 MRA250 BLF522 MRA990	PDF
MRA359 Abstract: MDA536 BLV103 MRA364 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV103 UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor FEATURES • Internal matching for an optimum wideband capability and high gain • Emitter-ballasting resistors for	Original	BLV103 MRA359 MDA536 BLV103 MRA364	PDF
mrc102 Abstract: MRC100 mrc101 MRC103 BLV194 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV194 UHF power transistor Product specification January 1993 Philips Semiconductors Product specification UHF power transistor FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures	Original	BLV194 OT171 mrc102 MRC100 mrc101 MRC103 BLV194	PDF
BLF542 Abstract: MBB778 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF542 UHF power MOS transistor Product specification File under Discrete Semiconductors, SC08b October 1992 Philips Semiconductors Product specification UHF power MOS transistor FEATURES BLF542 PIN CONFIGURATION • High power gain	Original	BLF542 SC08b MBB072 OT171 BLF542 MBB778	PDF
BLF542 Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF542 UHF power MOS transistor Product specification October 1992 Philips Semiconductors Product specification UHF power MOS transistor FEATURES BLF542 PIN CONFIGURATION • High power gain • Easy power control halfpage	Original	BLF542 MBB072 OT171 BLF542	PDF
122d Abstract: BLU98 ON4612 sot37 172d BLV100 Text: 62 RF/Microwave Devices Bipolar RF Transmitting Transistors SHF 900 MHz Package Outline Type No. Load Power W @ 900 MHz Power Gain (dB) @ 900 MHz Supply Voltage (V) 0.075 0.075 0.16 0.16 0.4 0.75 0.8 1.2 1 1.5 1.5 3 0.75 1.5 3 6 7.5 9.5 7 9 6.8 5.3 6 6 7	OCR Scan	BFR90A BFG90A BFR91A BFG91A BLU98 BLV90 BLT80 BLT81 BLV90/SL BLV91/SL 122d ON4612 sot37 172d BLV100	PDF
sot123 package Abstract: BLF543 BLF221 sot 123 blf246b flange SOT-123 Text: 65 RF/Microwave Devices RF Power MOS Transistors cont. Type No. Package Outline Load Power (W) V DS (V) f (MHz) Source Gain (dB) 28 28 28 28 28 50 28 28 50 28 50 28 50 28 50 175 175 175 175 175 108 175 108 108 108 108 175 108 175 108 14 typ 13 13 13 14 19 typ	OCR Scan	BLF241 BLF242 BLF244 BLF245 BLF245B BLF175 BLF246B BLF246 BLF276 BLF147 sot123 package BLF543 BLF221 sot 123 flange SOT-123	PDF
SOT123 Package Abstract: BLV62 BLW33 BLX98 BLF147 BLF175 SOT-48 bfr96s SOT123 Text: 64 RF/Microwave Devices Bipolar RF Transmitting Transistors TV Transposers/Transmitters co n t. Type No. Output Power @ djm Package Outline SYNC (W) (dB) Output Power P0 - IdB (W) Power Gain (dB) Supply Voltage (V) 115 225 11 9.0 28 35 10 11 11 6 10 10 5.5	OCR Scan	BLV36 BLV38 OT-161, OT-179, BFR96S BFQ34 BLW32 BLX96 BFQ68 BLW33 SOT123 Package BLV62 BLX98 BLF147 BLF175 SOT-48 SOT123	PDF

T119 A Abstract: sot 122 SOT123 Package BLW78 Text: 63 RF/Microwave Devices Bipolar RF Transmitting Transistors SHF 900 - 960 MHz cont. Load Power (W) @ 900 MHz Power Gain (dB) @ 900 MHz Supply Voltage (V) 35* 50 50* 150(PEP)* 7* 8.5 8.1* 7.5* 24 26 26 26 Package Outline Load Power (W) @ 108 MHz Power Gain	OCR Scan	4-26V BLV97CE BLV101A BLV101B BLV948 OT-171, OT-273, OT-262A2, 2N3866 T119 A sot 122 SOT123 Package BLW78	PDF
BLF542 Abstract: UBB776 Text: Philips Semiconductors 003010b HR M APX Product specification UHF power MOS transistor BLF542 N AMER PHILIPS/DISCRETE FEATURES b^E T> PIN CONFIGURATION • High power gain • Easy power control o • Gold metallization • Good thermal stability • Withstands full load mismatch	OCR Scan	GG3G10b BLF542 OT171 PINNING-SOT171 MBA931 MRA733 BLF542 UBB776	PDF
71009 SB Abstract: BLV100 71108Sb 35 W 960 MHz RF POWER TRANSISTOR NPN Text: . Philips Semiconductors • 7110asb DOtaBlDQ T71 ■ I P H I N 1 •*J PHILIPS INTERNATIONAL UHF power transistor _ . , . Product specification bSE D BLV100 PIN CONFIGURATION FEATURES • Internal input matching to achieve high power gain • Ballasting resistors for an	OCR Scan	71108Sb BLV100 OT171 -SOT171 CA91E 71009 SB BLV100 35 W 960 MHz RF POWER TRANSISTOR NPN	PDF
TIC 122 Transistor Abstract: sot171 outline heatsink catalogue SOT171 BLV910 TIC 220 MLC663 Text: Philips Semiconductors Product specification UHF power transistor BLV910 FEATURES DESCRIPTION • Internal input matching to achieve high power gain and easy design of wideband circuits NPN silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor is	OCR Scan	BLV910 OT171 OT171 MBA45Ã OT171. 71ina2t TIC 122 Transistor sot171 outline heatsink catalogue SOT171 BLV910 TIC 220 MLC663	PDF
BLF522 Abstract: URA417 4312 020 366 3909 Text: Philips Semiconductora Product specification UHF power MOS transistor BLF522 PHILIPS IN T E RN AT IO NA L FEATURES 7 1 3 ,0 fi2 b OOMaTMS STQ M P H I N PIN CONFIGURATION High power gain Easy power control Gold metallization Good thermal stability Withstands full load mismatch	OCR Scan	OT171 OT171 BLF522 711Dfl2b 711005b BLF522 URA417 4312 020 366 3909	PDF
itt 2222 Abstract: tag l9 transistor 2222 030 capacitor philips ITT 2222 A 4312 020 36642 Philips 2222 capacitor electrolytic capacitor 47 capacitor j63 c9 38478 philips ceramic capacitors Text: PhHip^emiconductor^^^ _ bbSBIBl 003G12b TD7 H AP X ^Pjoduc^pecjficatjon UHF power MOS transistor ^ BLF544 N AMER P H I L I P S / D I S C R E T E bTE D PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability / • Gold metallization ensures	OCR Scan	003G12b BLF544 OT171 MCA836 itt 2222 tag l9 transistor 2222 030 capacitor philips ITT 2222 A 4312 020 36642 Philips 2222 capacitor electrolytic capacitor 47 capacitor j63 c9 38478 philips ceramic capacitors	PDF
transistor tt 2222 Abstract: TT 2222 philips metal film resistor BLF543 UBA001 WCA910 capacitor philips 425 stripline multilayer ceramic capacitor philips philips resistor 2322 Text: Philips Sem iconductors [^ 5 3 ^ 3 1 0030115 121 • APX ^ ro d u c ts p e c m Ä BLF543 UHF power MOS transistor b * ìE N AMER P H I L I P S / D I S C R E T E D ' PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability	OCR Scan	bbS3T31 OT171 PINNING-SOT171 BLF543 MCA90E transistor tt 2222 TT 2222 philips metal film resistor BLF543 UBA001 WCA910 capacitor philips 425 stripline multilayer ceramic capacitor philips philips resistor 2322	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors ^53= 131 0030 1 2 b TO? • APX ^roductspecjfjcat^ UHF power MOS transistor BLF544 N AUER PHILIPS/DISCRETE FEATURES b'iE D PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability / • Gold metallization ensures	OCR Scan	BLF544 OT171	PDF
PQ-32/MCA908 Abstract: No abstract text available Text: Philips Semiconductors 0030115 121 • A P X ^ S i a S S i S S S t,h 5 3 m UHF power MOS transistor ^ BLF543 N AMER PHILIPS/DISCRETE b^E » ' PIN CONFIGURATION FEATURES • High power gain • Easy power control / -\ • Good thermal stability o • Gold metallization ensures	OCR Scan	BLF543 OT171 D03D125 MCA905 PQ-32/MCA908	PDF
BLF543 Abstract: 4312 020 36640 2222 kn a ceramic capacitor, 20pF 2222 capacitor philips Go-mat capacitor philips 425 ATC capacitor 2322 151 2222 030 capacitor philips Text: Product specification Philips Semiconductors UHF power MOS transistor PHILIPS INTERNATIONAL FEATURES BLF543 SbE D • 711Dfl2b 50b « P H I N PIN CONFIGURATION High power gain Easy power control Good thermal stability Gold metallization ensures excellent reliability	OCR Scan	BLF543 711Dfl5b OT171 OT171 BLF543 4312 020 36640 2222 kn a ceramic capacitor, 20pF 2222 capacitor philips Go-mat capacitor philips 425 ATC capacitor 2322 151 2222 030 capacitor philips	PDF

SOT171 OUTLINE Search Results

SOT171 OUTLINE Result Highlights (5)

SOT171 OUTLINE Datasheets Context Search

BLV97CE

BLV97CE

xl 6009

xl 6009

film dielectric trimmer PTFE

mda540

MRA250

MRA359

mrc102

BLF542

BLF542

122d

sot123 package

SOT123 Package

T119 A

BLF542

71009 SB

TIC 122 Transistor

BLF522

itt 2222

transistor tt 2222

Untitled

PQ-32/MCA908

BLF543