Untitled
Abstract: No abstract text available
Text: SOT171A CDFM6; blister pack; standard product orientation 12NC ending 112 Rev. 1 — 18 October 2012 Packing information 1. Packing method Blister cover ESD Label Foam Blister bottom ESD Label Printed plano box Space for additional label Preprinted ESD warning
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OT171A
msc071
OT171A
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BLV59
Abstract: No abstract text available
Text: , Jnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 UHF linear power transistor BLV59 PINNING-SOT171A FEATURES « Internal input matching to achieve an optimum wideband capability and high power gain
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BLV59
PINNING-SOT171A
OT171A
BLV59
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BLV97CE
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV97CE UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor BLV97CE FEATURES DESCRIPTION • Internal input matching to achieve high power gain NPN silicon planar epitaxial transistor in a SOT171
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BLV97CE
OT171
BLV97CE
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2222 031 capacitor philips
Abstract: BLW898
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW898 UHF linear power transistor Product specification Supersedes data of 1995 Oct 04 1996 Jul 16 Philips Semiconductors Product specification UHF linear power transistor BLW898 PINNING SOT171A FEATURES • Internal input matching for wideband operation and high
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BLW898
OT171A
BLW898
SCA50
127041/1200/02/pp12
2222 031 capacitor philips
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sot171a
Abstract: No abstract text available
Text: PDF: 1999 Apr 16 Philips Semiconductors Package outline Flanged ceramic package; 2 mounting holes; 6 leads SOT171A D A F D1 U1 B q C w2 M C M H1 c b 2 4 6 E1 H E U2 1 3 5 w1 M A M B M p A Q w3 M b1 e 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions
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OT171A
sot171a
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BLV97CE
Abstract: No abstract text available
Text: , One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. UHF power transistor BLV97CE FEATURES DESCRIPTION • Internal input matching to achieve high power gain NPN silicon planar epitaxial transistor in a SOT171
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BLV97CE
OT171
MDA443
OT171A
BLV97CE
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transistor t A968
Abstract: A1380 transistor
Text: DISCRETE SEMICONDUCTORS DAT M3D076 BLF542 UHF power MOS transistor Product specification Supersedes data of 1998 Jan 08 2003 Sep 18 Philips Semiconductors Product specification UHF power MOS transistor BLF542 PINNING - SOT171A FEATURES • High power gain
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M3D076
BLF542
OT171A
SCA75
613524/03/pp15
transistor t A968
A1380 transistor
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BLF544
Abstract: GP2012 philips resistor 2322 724 MRA992
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D076 BLF544 UHF power MOS transistor Product specification Supersedes data of 1998 Jan 21 2003 Sep 18 Philips Semiconductors Product specification UHF power MOS transistor BLF544 PINNING - SOT171A FEATURES • High power gain
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M3D076
BLF544
OT171A
SCA75
613524/03/pp16
BLF544
GP2012
philips resistor 2322 724
MRA992
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BLF542
Abstract: PHILIPS 4312 amplifier
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D076 BLF542 UHF power MOS transistor Product specification Supersedes data of 1998 Jan 08 2003 Sep 18 Philips Semiconductors Product specification UHF power MOS transistor BLF542 FEATURES PINNING - SOT171A • High power gain
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M3D076
BLF542
OT171A
SCA75
613524/03/pp15
BLF542
PHILIPS 4312 amplifier
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821 ceramic capacitor
Abstract: philips catalog potentiometer philips resistor 2322 BLF544 MBK442
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D076 BLF544 UHF power MOS transistor Product specification Supersedes data of October 1992 1998 Jan 21 Philips Semiconductors Product specification UHF power MOS transistor BLF544 PINNING - SOT171A FEATURES • High power gain
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M3D076
BLF544
OT171A
SCA57
127067/00/02/pp16
821 ceramic capacitor
philips catalog potentiometer
philips resistor 2322
BLF544
MBK442
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PDF
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BLV59
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D076 BLV59 UHF linear power transistor Product specification Supersedes data of March 1993 1998 Jan 09 Philips Semiconductors Product specification UHF linear power transistor BLV59 FEATURES PINNING - SOT171A • Internal input matching to achieve an optimum
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M3D076
BLV59
OT171A
SCA57
127067/00/02/pp12
BLV59
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT M3D076 BLF544 UHF power MOS transistor Product specification Supersedes data of 1998 Jan 21 2003 Sep 18 Philips Semiconductors Product specification UHF power MOS transistor BLF544 PINNING - SOT171A FEATURES • High power gain
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M3D076
BLF544
OT171A
SCA75
613524/03/pp16
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LPC2148 i2c
Abstract: BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent
Text: Building blocks for vibrant media Highlights of the NXP product portfolio Building blocks for vibrant media At NXP Semiconductors, the new company founded by Philips, we’re driven by a single purpose — to deliver vibrant media technologies that create better sensory experiences.
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OT363
SC-88)
LPC2148 i2c
BGB210S
lpc2148 interfacing 2.8" TFT LCD DISPLAY
BGB210
embedded c code to interface lpc2148 with sensor
BGW200
TDA8932T
tda8920bj
NXP PN531
TDA8947J equivalent
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PDF
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BLW898
Abstract: tv schematic diagram PHILIPS transposers MGH829 linear amplifier 470-860 AN98015 china tv schematic diagram 470-860 mhz Power amplifier w
Text: APPLICATION NOTE A broadband 3 W amplifier for band IV/V TV transposers based on the BLW898 AN98015 Philips Semiconductors A broadband 3 W amplifier for band IV/V TV transposers based on the BLW898 CONTENTS 1 ABSTRACT 2 INTRODUCTION 3 AMPLIFIER ELECTRICAL DESIGN OBJECTIVES
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BLW898
AN98015
SCA57
BLW898
tv schematic diagram PHILIPS
transposers
MGH829
linear amplifier 470-860
AN98015
china tv schematic diagram
470-860 mhz Power amplifier w
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BLV97
Abstract: IEC134
Text: PHILIPS INTERNATIONAL MIE D m 711002b Q0S73ÔÔ ö ‘' L IPHIN BLV97 r - 3 3 - // UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor in SOT171 envelope intended for use in class-B operated base station transmitters in the 900 MHz communications band.
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OCR Scan
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OT171
T-33-11
7Z94379
BLV97
IEC134
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PDF
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BLW898
Abstract: philips resistor 2322 156 795-820 a 1757 transistor SOT171 Tekelec TO
Text: Philips Semiconductors Product specification UHF linear power transistor BLW898 FEATURES PINNING SOT171A • Internal input matching for wideband operation and high power gain PIN • Polysilicon emitter ballasting resistors for an optimum temperature profile
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OCR Scan
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BLW898
OT171A
OT171A
711Dfl2ti
BLW898
philips resistor 2322 156
795-820
a 1757 transistor
SOT171
Tekelec TO
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PDF
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transistor cq 529
Abstract: BLV94 sot-171 transistor zx series
Text: PHILIPS IN T E RN AT ION AL bSE D m 711GÛ5b 0Db3052 Jl 3T1 • PHIN BLV94 UHF P O W ER T R A N SIST O R NPN silicon planar epitaxial transistor prim arily intended fo r common base, class-B operation in mobile radio transmitters fo r the 900 MHz comm unication band.
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BLV94
711DfiEb
00b3DbÃ
transistor cq 529
BLV94
sot-171
transistor zx series
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bgjg
Abstract: transistor T philips 2322 733 BLF542 UFU370 3a0c 2222 030 capacitor philips philips potentiometer 43t transistor 3909
Text: Philips Semiconductors_ Product specification UHF power MOS transistor PHILIPS INTERNATIONAL FEATURES • • • • • • T " 3 <î?~0 cÎBLF542 5tiE D • 711DflSb 0D43TS4 5T3 ■ PHIN PIN CONFIGURATION High power gain Easy power control
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-0ciBLF542
0D43TS4
OT171
PINNING-SOT171
MBA931
MRA971
bgjg
transistor T
philips 2322 733
BLF542
UFU370
3a0c
2222 030 capacitor philips
philips potentiometer
43t transistor
3909
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71009 SB
Abstract: BLV100 71108Sb 35 W 960 MHz RF POWER TRANSISTOR NPN
Text: . Philips Semiconductors • 7110asb DOtaBlDQ T71 ■ I P H I N 1 •*J PHILIPS INTERNATIONAL UHF power transistor _ . , . Product specification bSE D BLV100 PIN CONFIGURATION FEATURES • Internal input matching to achieve high power gain • Ballasting resistors for an
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71108Sb
BLV100
OT171
-SOT171
CA91E
71009 SB
BLV100
35 W 960 MHz RF POWER TRANSISTOR NPN
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transistor 603 47e
Abstract: BTB 600 BR BLV103 71009 SB
Text: Philips Semiconductors 7110f l 5b D Q b B ll^ T 4fl ^ B P H IN Product specification UHF power transistor BLV103 bS E T> PHILIPS INTERNATIONAL FEATU RES • Internal matching for an optimum wideband capability and high gain • Emitter-ballasting resistors for
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OCR Scan
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71IDA5b
00b31I^
BLV103
OT171
MSA45Ã
MRA360
transistor 603 47e
BTB 600 BR
BLV103
71009 SB
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PDF
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BLV98
Abstract: No abstract text available
Text: 41E D PHILIPS INTERNATIONAL • 711002h 002740b b H P H I N '' BLV98 r-33-n U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-171 envelope intended for use in class-B operated base station transmitters in the 900 M Hz communications band.
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OCR Scan
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711002h
002740b
BLV98
r-33-a
OT-171
7Z9433B
BLV98
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BLV194
Abstract: No abstract text available
Text: 7110ô2fci DDb313û TTT « P H I N bSE D PHILIPS INTERNATIONAL UHF power transistor Product specification Philips Semiconductors BLV194 Q U IC K REFERENCE DATA RF performance at T h = 25 °C in a common emitter test circuit. FEATURES • Emitter-ballasting resistors for an
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OCR Scan
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711065b
D0b313fl
BLV194
OT171
PINNING-SOT171
MRC097
BLV194
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PDF
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irf9110
Abstract: SOT-123 IRF224 irf113 1rf48 BUZ10 BUZ63 IRF9122 irfl33 IRF034
Text: - 250 - Ta=25<1C f m € tt € t Vd s or 4- V d g Vg s (V) (V) If l: * /CH * /CH (A) (W) V g s th) 1DSS Jg s s Pd Id max (nA) Vg s (V) C m A) Vd s (V) (V) (V) Id (mA) ff] % ft 1± Ciss (max) *typ V g s ( 0 ) (V) *typ (A) Id (A) 140* -25 TO-220AB 190* 25 TO-220AB
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1RF9Z32
O-220AB
1RF48
IRF034
BUZ171
O-220ftB
irf120
to-204aa
irf9110
SOT-123
IRF224
irf113
BUZ10
BUZ63
IRF9122
irfl33
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PDF
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SOT-123
Abstract: IRF9110 PHILIPS TO220 blf544b BLF246 BLF348 irc224 IRC350 IRC530 IRC832
Text: - % % A f ft i Vd s or Vd g tt £ i T Vg s Ta=25'C) «É. Ig s s Id Pd * /C H * /CH (W) Vds (V) Id (nA) g fs Io(on) C ís s Coss ft B m ♦typ Vg s (V) (0) Id (A) * ty p (A) Vg s (V) *typ (S) Id (max) (max) (max) % (A) (pF) (pF) (pF) Vd s (V) % (V) P '200 ± 2 0
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OCR Scan
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2k6847
o-205af
2n6849
2n6851
OT-268
BIF548
OT-262
IRF9Z10
O-220
SOT-123
IRF9110
PHILIPS TO220
blf544b
BLF246
BLF348
irc224
IRC350
IRC530
IRC832
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