Untitled
Abstract: No abstract text available
Text: Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 5-lead TO-220 SOT263B E p1 A ∅p A1 q D1 mounting base D L1 Q L2 m L 1 5 e b c w M 5 10 mm scale DIMENSIONS mm are the original dimensions UNIT A A1 b c D D1 E e L mm 4.5 4.1
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O-220
OT263B
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TO-220 JEDEC
Abstract: sot263b 16l22
Text: PDF: 2001 Jan 11 Philips Semiconductors Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 5-lead TO-220 SOT263B E p1 A ∅p A1 q D1 mounting base D L1 Q L2 m L 1 5 e b c w M 5 10 mm scale DIMENSIONS mm are the original dimensions
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O-220
OT263B
TO-220 JEDEC
sot263b
16l22
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Untitled
Abstract: No abstract text available
Text: Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 5-lead TO-220 lead form option SOT263B-01 E p1 A ∅p A1 q D1 mounting base D L3 L L1 R L4 m 1 L2 5 e b R w M c Q Q1 Q2 5 10 mm scale DIMENSIONS mm are the original dimensions
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O-220
OT263B-01
O-220
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L3 Package
Abstract: SOT263 TO-220 JEDEC sot263b
Text: PDF: 2001 Jan 11 Philips Semiconductors Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 5-lead TO-220 lead form option SOT263B-01 E p1 A ∅p A1 q D1 mounting base D L3 L1 R L L4 m 1 L2 5 e b R w M c Q Q1 Q2 5 10 mm scale DIMENSIONS mm are the original dimensions
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O-220
OT263B-01
O-220
L3 Package
SOT263
TO-220 JEDEC
sot263b
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BUK9907-55ATE
Abstract: No abstract text available
Text: BUK9907-55ATE N-channel TrenchPLUS logic level FET Rev. 02 — 16 February 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for
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BUK9907-55ATE
BUK9907-55ATE
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BUK7907-55AIE
Abstract: No abstract text available
Text: BUK7907-55AIE N-channel TrenchPLUS standard level FET Rev. 02 — 9 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS current sensing
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BUK7907-55AIE
BUK7907-55AIE
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7905 datasheet
Abstract: BUK7105-40AIE BUK7905-40AIE SOT426
Text: BUK71/7905-40AIE TrenchPLUS standard level FET Rev. 03 — 23 May 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance, TrenchPLUS
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BUK71/7905-40AIE
BUK7105-40AIE
OT426
BUK7905-40AIE
OT263B
O-220)
7905 datasheet
SOT426
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7905
Abstract: 7905 datasheet description of transistor 7905 7905 application note 7905 pin details MA 7905 BUK7105-40ATE BUK7905-40ATE
Text: BUK71/7905-40ATE TrenchPLUS standard level FET Rev. 01 — 20 August 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring both very low on-state resistance and
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BUK71/7905-40ATE
BUK7105-40ATE
OT426
BUK7905-40ATE
OT263B
O-220)
7905
7905 datasheet
description of transistor 7905
7905 application note
7905 pin details
MA 7905
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BUK7109-75AIE
Abstract: BUK7909-75AIE BUK790
Text: BUK71/7909-75AIE TrenchPLUS standard level FET Rev. 01 — 9 August 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance, TrenchPLUS
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BUK71/7909-75AIE
BUK7109-75AIE
OT426
BUK7909-75AIE
OT263B
O-220AB)
BUK790
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00E-12
Abstract: BUK210-50Y BUK215-50Y
Text: Philips Semiconductors Product specification PowerMOS transistor TOPFET high side switch DESCRIPTION BUK210-50Y QUICK REFERENCE DATA Monolithic single channel high side protected power switch in TOPFET2 technology assembled in a 5 pin plastic package. SYMBOL
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BUK210-50Y
00E-12
BUK210-50Y
BUK215-50Y
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BC548 TRANSISTOR REPLACEMENT
Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction
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BAP1321-02
BAP65-05
BAP65-03
BAP65-05W
BAP65-02
BAP63-03
BAP63-02
BAP64-03
BAP64-02
BB143
BC548 TRANSISTOR REPLACEMENT
TYN612 pin diagram
1n4007 smd, toshiba
S0817MH
TYN604 scr pin diagram
kmz51 compass
TRANSISTOR S1A 64 smd
toshiba l 300 laptop motherboard circuit diagram
JFET TRANSISTOR REPLACEMENT GUIDE j201
replacements for transistor NEC D 587
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Transistor SMD SOT363 SC70
Abstract: Transistor SMD SOT363 SC70 SC88 TRANSISTOR SMD CODE PACKAGE SOT363 DMX DECODER IC SOT343R reset transistor SOT363 PBLS4004Y BFG310W/XR PBLS4003V RF SMD transistors pnp
Text: New MultiMarket Products Quarterly highlights Semiconductors VOLUME 4 In this issue: P 1 PIP212-12M Integrated DC/DC converter powertrain solution • ISSUE 1 MARCH 2005 ■ Welcome to the latest issue of Philips’ New MultiMarket Products – Quarterly highlights.
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PIP212-12M
BCM847BS
BCM857BS
PBLS15xx
PBLS40xx
P89LPC9102
P89LPC9103
Transistor SMD SOT363 SC70
Transistor SMD SOT363 SC70 SC88
TRANSISTOR SMD CODE PACKAGE SOT363
DMX DECODER IC
SOT343R reset
transistor SOT363
PBLS4004Y
BFG310W/XR
PBLS4003V
RF SMD transistors pnp
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circuit diagram wireless spy camera
Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
Text: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint
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DFN1006D-2
OD882D)
DFN1010D-3
OT1215)
DFN2020MD-6
OT1220)
DFN1608D-2
OD1608)
DSN0603
OD962)
circuit diagram wireless spy camera
PDTB123Y
IP4303CX4
dual cc BAW62
3267 tsop6
PCMF2DFN1
BST60
PUMD4
PDTB123E
PDTA143
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PHD78NQ
Abstract: BUK9507-30B BUK7608-40B PHB27NQ10T PHP18NQ10T ph43 PHD66NQ03LT BUK9575-100A PHP45NQ10TA si2302ds
Text: Power MOSFET Selection Guide 2009 Smaller, faster, cooler Table of contents 12 V – 25 V N-channel MOSFETs ������������������������������������������������������������������������������������������������������������ 4
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Untitled
Abstract: No abstract text available
Text: BUK71/7905-40AIE TrenchPLUS standard level FET Rev. 01 — 25 July 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance, TrenchPLUS
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BUK71/7905-40AIE
BUK7105-40AIE
OT426
BUK7905-40AIE
OT263B
O-220AB)
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MOSFET TRANSISTOR SMD MARKING CODE vl
Abstract: transistor smd code marking KEY smd transistor marking vbg marking VBG vbg marking code smd transistor marking IL TRANSISTOR SMD MARKING CODE UA marking CIG
Text: Philips Semiconductors Product specification TOPFET high side switch SMD version of BUK223-50Y DESCRIPTION Monolithic single channel high side protected power switch in TOPFET2 technology assembled in a 5 pin plastic surface mount package. BUK224-50Y QUICK REFERENCE DATA
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BUK223-50Y
BUK224-50Y
29-May-02)
MOSFET TRANSISTOR SMD MARKING CODE vl
transistor smd code marking KEY
smd transistor marking vbg
marking VBG
vbg marking code
smd transistor marking IL
TRANSISTOR SMD MARKING CODE UA
marking CIG
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Untitled
Abstract: No abstract text available
Text: BUK7907-55AIE N-channel TrenchPLUS standard level FET Rev. 02 — 9 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS current sensing
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BUK7907-55AIE
BUK7907-55AIE
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BUK794R1-40BT
Abstract: 748 DIODE
Text: BUK794R1-40BT N-channel TrenchPLUS standard level FET Rev. 02 — 16 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. The
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BUK794R1-40BT
BUK794R1-40BT
748 DIODE
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BUK7907-40ATC
Abstract: No abstract text available
Text: BUK7907-40ATC N-channel TrenchPLUS standard level FET Rev. 02 — 10 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for
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BUK7907-40ATC
BUK7907-40ATC
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MBL317
Abstract: BUK7907-55ATE ua2022
Text: BUK7907-55ATE TrenchPLUS standard level FET Rev. 02 — 16 July 2002 Product data M3D745 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on state resistance, and TrenchPLUS
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BUK7907-55ATE
M3D745
BUK7907-55ATE
OT263B.
MBL317
ua2022
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BUK7107-55AIE
Abstract: BUK7907-55AIE
Text: BUK71/7907-55AIE TrenchPLUS standard level FET Rev. 01 — 12 August 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance, TrenchPLUS
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BUK71/7907-55AIE
BUK7107-55AIE
OT426
BUK7907-55AIE
OT263B
O-220AB)
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BUK9907-40ATC
Abstract: MQ101
Text: BUK9907-40ATC TrenchPLUS logic level FET Rev. 01 — 28 January 2002 Product data M3D745 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance and TrenchPLUS
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BUK9907-40ATC
M3D745
BUK9907-40ATC
OT263B.
MQ101
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Transistor SMD SOT363 SC70
Abstract: BSP254A D2Pak Package IRF540 complementary MOSFET Selection Guide PHD78NQ list of n channel fet IRF640 smd PSMN009-100W BUK7516
Text: Semiconductors Power MOSFET Selection Guide 2002 / 2003 The evolution of our LVMOS strategy continues to go from strength to strength. This MOSFET selection guide summarises our portfolio releases to date. Some of our recent innovations include: LFPAK and QLPAK packages – see page 4-5 and 8-9 exciting additions to our portfolio that further extends your choice and, with ever-increasing demands for improved
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transistor truth table
Abstract: BUK223-50Y
Text: Philips Semiconductors Product specification PowerMOS transistor TOPFET high side switch DESCRIPTION BUK223-50Y QUICK REFERENCE DATA Monolithic single channel high side protected power switch in TOPFET2 technology assembled in a 5 pin plastic package. SYMBOL
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BUK223-50Y
transistor truth table
BUK223-50Y
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