CFH703A
Abstract: LNA Ku band CFH705 cfh703 ku LNA LNB ku band lnb ku ku band lna LNA ku-band SOT343F
Text: CFH70x Low-noise, high gain pHEMT transistors in small & easy to use SOT343FP package Fabricated using GaAs process technology, the CFH70x family pHEMT transistors delivers extremely low noise and very high gain in the easy to use SOT343FP package making it the ideal
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CFH70x
OT343FP
CFH70x
CFH703A
LNA Ku band
CFH705
cfh703
ku LNA
LNB ku band
lnb ku
ku band lna
LNA ku-band
SOT343F
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BFU760F
Abstract: bfu760 JESD625-A dielectric resonator oscillator germanium transistor table Germanium power
Text: BFU760F NPN wideband silicon germanium RF transistor Rev. 1 — 29 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
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BFU760F
OT343F
JESD625-A
BFU760F
bfu760
dielectric resonator oscillator
germanium transistor table
Germanium power
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BFU730F
Abstract: JESD625-A 555 ic Germanium power
Text: BFU730F NPN wideband silicon germanium RF transistor Rev. 1 — 29 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
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BFU730F
OT343F
JESD625-A
BFU730F
555 ic
Germanium power
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ON5088
Abstract: germanium NPN germanium transistors NPN JESD625-A SOT343F dielectric resonator oscillator NPN RF Transistor Germanium power
Text: ON5088 NPN wideband silicon germanium RF transistor Rev. 01 — 22 April 2010 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
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ON5088
OT343F
JESD625-A
ON5088
germanium NPN
germanium transistors NPN
SOT343F
dielectric resonator oscillator
NPN RF Transistor
Germanium power
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2.4 ghz transistor wifi amplifier
Abstract: Germanium power
Text: BFU768F NPN wideband silicon germanium RF transistor Rev. 1.2 — 24 December 2012 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
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BFU768F
OT343F
JESD625-A
2.4 ghz transistor wifi amplifier
Germanium power
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BFU725F
Abstract: JESD625-A germanium rf transistor code marking s20 TRANSISTOR germanium transistor germanium transistors NPN SOT343F germanium transistor npn LNB ka band Germanium power
Text: BFU725F NPN wideband silicon germanium RF transistor Rev. 01 — 6 December 2007 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
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BFU725F
OT343F
JESD625-A
BFU725F
germanium rf transistor
code marking s20 TRANSISTOR
germanium transistor
germanium transistors NPN
SOT343F
germanium transistor npn
LNB ka band
Germanium power
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Untitled
Abstract: No abstract text available
Text: BFU690F NPN wideband silicon RF transistor Rev. 2 — 14 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. 1.2 Features and benefits
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BFU690F
OT343F
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transistor marking N1
Abstract: BFU725F JESD625-a LNB ka band 160 germanium transistor ka-band mixer DRO lnb germanium transistors NPN ka band lna nxp DC to microwave
Text: BFU725F/N1 NPN wideband silicon germanium RF transistor Rev. 01 — 13 July 2009 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
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BFU725F/N1
OT343F
JESD625-A
BFU725F
transistor marking N1
LNB ka band
160 germanium transistor
ka-band mixer
DRO lnb
germanium transistors NPN
ka band lna
nxp DC to microwave
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DRO lnb
Abstract: JESD625-A BFU630 BFU630F
Text: BFU630F NPN wideband silicon RF transistor Rev. 1 — 15 December 2010 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION
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BFU630F
OT343F
JESD625-A
DRO lnb
BFU630
BFU630F
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BFU660F
Abstract: sdars JESD625-A 25CCBS
Text: BFU660F NPN wideband silicon RF transistor Rev. 1 — 11 January 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION
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BFU660F
OT343F
JESD625-A
BFU660F
sdars
25CCBS
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SOT343F
Abstract: SOT-343F
Text: Package outline Philips Semiconductors Plastic surface-mounted flat pack package; reverse pinning; 4 leads D SOT343F E A y X HE e 3 4 A c 2 w M A Lp 1 bp b1 w A M detail X e1 1 2 mm scale DIMENSIONS mm are the original dimensions UNIT A max bp b1 c D E e
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OT343F
SOT343F
SOT-343F
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Untitled
Abstract: No abstract text available
Text: BFU610F NPN wideband silicon RF transistor Rev. 2 — 11 January 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION
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BFU610F
OT343F
JESD625-A
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BFU725F
Abstract: germanium transistors NPN DRO lnb ka-band mixer Germanium diode data sheet germanium npn nxp power microwave transistor RF Transistor reference JESD625-A Germanium power
Text: BFU725F NPN wideband silicon germanium RF transistor Rev. 02 — 23 June 2010 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
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BFU725F
OT343F
JESD625-A
BFU725F
germanium transistors NPN
DRO lnb
ka-band mixer
Germanium diode data sheet
germanium npn
nxp power microwave transistor
RF Transistor reference
Germanium power
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Untitled
Abstract: No abstract text available
Text: SOT343F DFP4; Tape reel SMD; standard product orientation 12NC ending 115 Rev. 1 — 15 November 2012 Packing information 1. Packing method Printed plano box Barcode label Reel Tape Barcode label Circular sprocket holes opposite the label side of reel QA Seal
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OT343F
msc074
OT343F
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Germanium power
Abstract: No abstract text available
Text: ON5088 NPN wideband silicon germanium RF transistor Rev. 2 — 22 December 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
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OT343F
JESD625-A
Germanium power
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Untitled
Abstract: No abstract text available
Text: BFG424F NPN 25 GHz wideband transistor Rev. 2 — 13 September 2011 Product data sheet 1. Product profile 1.1 General description NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343F package.
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BFG424F
OT343F
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BFU610F
Abstract: SOT343F germanium rf transistor germanium power devices corporation Mifare PLUS X Germanium power
Text: BFU610F NPN wideband silicon germanium RF transistor Rev. 01 — 17 June 2010 Objective data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
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BFU610F
OT343F
BFU610F
SOT343F
germanium rf transistor
germanium power devices corporation
Mifare PLUS X
Germanium power
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Untitled
Abstract: No abstract text available
Text: BFU710F NPN wideband silicon germanium RF transistor Rev. 1 — 20 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
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BFU710F
OT343F
JESD625-A
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Untitled
Abstract: No abstract text available
Text: BFU760F NPN wideband silicon germanium RF transistor Rev. 1 — 29 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
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BFU760F
OT343F
JESD625-A
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Untitled
Abstract: No abstract text available
Text: BFG424F NPN 25 GHz wideband transistor Rev. 2 — 13 September 2011 Product data sheet 1. Product profile 1.1 General description NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343F package.
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BFG424F
OT343F
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Untitled
Abstract: No abstract text available
Text: Package outline Plastic surface-mounted flat pack package; reverse pinning; 4 leads D SOT343F E A y X HE e 3 4 A c 2 w M A Lp 1 bp b1 w A M detail X e1 1 2 mm scale DIMENSIONS mm are the original dimensions UNIT A max bp b1 c D E e e1 HE Lp w y mm 0.75 0.65
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OT343F
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BFU790F
Abstract: JESD625-A Germanium power
Text: BFU790F NPN wideband silicon germanium RF transistor Rev. 1 — 22 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
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BFU790F
OT343F
JESD625-A
BFU790F
Germanium power
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JESD625-A
Abstract: BFU710F DRO lnb Germanium power
Text: BFU710F NPN wideband silicon germanium RF transistor Rev. 1 — 20 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
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BFU710F
OT343F
JESD625-A
BFU710F
DRO lnb
Germanium power
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Germanium Transistor
Abstract: Germanium power ON5088,115
Text: ON5088 NPN wideband silicon germanium RF transistor Rev. 3 — 12 December 2012 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
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ON5088
OT343F
JESD625-A
Germanium Transistor
Germanium power
ON5088,115
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