BP317
Abstract: RZ1214B65Y L-Band
Text: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D034 RZ1214B65Y NPN microwave power transistor Product specification Supersedes data of 1997 Feb 18 1999 Dec 24 Philips Semiconductors Product specification NPN microwave power transistor RZ1214B65Y FEATURES PINNING - SOT443A
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Original
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M3D034
RZ1214B65Y
OT443A
125002/03/pp8
BP317
RZ1214B65Y
L-Band
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PDF
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LZ1418E100R
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET LZ1418E100R NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor LZ1418E100R FEATURES PINNING - SOT443A
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Original
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LZ1418E100R
OT443A
SCA53
127147/00/02/pp12
LZ1418E100R
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PDF
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Untitled
Abstract: No abstract text available
Text: Package outline Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT443A D A F 3 D1 U1 B q C c 1 L U2 E1 A w1 M A M B M p L E 2 w2 M C M b Q 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions UNIT A b
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OT443A
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PDF
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET RZ1214B65Y NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor RZ1214B65Y FEATURES PINNING - SOT443A • Interdigitated structure provides high emitter efficiency
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Original
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RZ1214B65Y
SCA53
127147/00/02/pp8
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PDF
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BP317
Abstract: RZ1214B35Y
Text: DISCRETE SEMICONDUCTORS DATA SHEET RZ1214B35Y NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor RZ1214B35Y FEATURES PINNING - SOT443A • Interdigitated structure provides high emitter efficiency
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Original
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RZ1214B35Y
OT443A
SCA53
127147/00/02/pp8
BP317
RZ1214B35Y
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PDF
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Untitled
Abstract: No abstract text available
Text: SOT443A Blister pack; standard product orientation; 12NC ending 114 Rev. 1 — 28 November 2012 Packing information 1. Packing method Blister cover ESD Label Foam Blister bottom ESD Label Printed plano box Space for additional label Preprinted ESD warning
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OT443A
msc071
OT443A
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PDF
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RF NPN POWER TRANSISTOR 3 GHZ
Abstract: PZ1418B15U PZ1418B30U SC15 el 817
Text: DISCRETE SEMICONDUCTORS DATA SHEET PZ1418B15U NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor PZ1418B15U FEATURES PINNING - SOT443A
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Original
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PZ1418B15U
OT443A
SCA53
127147/00/02/pp12
RF NPN POWER TRANSISTOR 3 GHZ
PZ1418B15U
PZ1418B30U
SC15
el 817
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PDF
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D034 RZ1214B65Y NPN microwave power transistor Product specification Supersedes data of 1997 Feb 18 1999 Dec 24 Philips Semiconductors Product specification NPN microwave power transistor RZ1214B65Y FEATURES PINNING - SOT443A
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Original
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M3D034
RZ1214B65Y
OT443
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PDF
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d 1047 transistor
Abstract: PZ1418B30U
Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D034 PZ1418B30U NPN microwave power transistor Product specification Supersedes data of 1997 Feb 19 1997 Nov 13 Philips Semiconductors Product specification NPN microwave power transistor PZ1418B30U PINNING - SOT443A
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Original
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M3D034
PZ1418B30U
OT443A
SCA55
127147/00/03/pp12
d 1047 transistor
PZ1418B30U
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PDF
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d 1047
Abstract: sot443a
Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D034 PZ1418B30U NPN microwave power transistor Product specification Supersedes data of 1997 Feb 19 1997 Nov 13 Philips Semiconductors Product specification NPN microwave power transistor PZ1418B30U PINNING - SOT443A
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Original
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M3D034
PZ1418B30U
01-Jul-98)
d 1047
sot443a
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PDF
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sot443a
Abstract: No abstract text available
Text: PDF: 1999 Apr 16 Philips Semiconductors Package outline Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT443A D A F 3 D1 U1 B q C c 1 L U2 E1 A w1 M A M B M p L E 2 w2 M C M b Q 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions
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Original
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OT443A
sot443a
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PDF
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET RZ1214B35Y NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor RZ1214B35Y FEATURES PINNING - SOT443A • Interdigitated structure provides high emitter efficiency
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Original
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RZ1214B35Y
OT443
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PDF
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LZ14
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES LZ1418E100R PINNING - SOT443A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR
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OCR Scan
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OT443A
LZ1418E100R
LZ14
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PDF
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transistor 38W
Abstract: transistor 38W 3 pin 38w transistor PZB16035U SC15 transistor 38W 16
Text: Philips Semiconductors Product specification NPN microwave power transistor PZB16035U PINNING - SOT443A FEATURES • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
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OCR Scan
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PZB16035U
OT443A.
transistor 38W
transistor 38W 3 pin
38w transistor
PZB16035U
SC15
transistor 38W 16
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PDF
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RZ1214B65Y
Abstract: SC15
Text: Philips Semiconductors Product specification NPN microwave power transistor RZ1214B65Y FEATURES PINNING - SOT443A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistor providing excellent current sharing and withstanding a high VSWR
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OCR Scan
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RZ1214B65Y
OT443A.
RZ1214B65Y
SC15
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PDF
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LZ1418E100R
Abstract: SC15
Text: Philips Semiconductors Product specification NPN microwave power transistor LZ1418E100R FEATURES PINNING - SOT443A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR
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OCR Scan
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LZ1418E100R
OT443A.
LZ1418E100R
SC15
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PDF
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RZ1214B35Y
Abstract: SC15 sot443a
Text: Philips Semiconductors Product specification NPN microwave power transistor RZ1214B35Y PINNING - SOT443A FEATURES • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistor providing excellent current sharing and withstanding a high VSWR
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OCR Scan
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RZ1214B35Y
OT443A.
RZ1214B35Y
SC15
sot443a
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PDF
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JH transistor
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN microwave power transistor RZ1214B65Y FEATURES PINNING - SOT443A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistor providing excellent current sharing and withstanding a high VSWR
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OCR Scan
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RZ1214B65Y
JH transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES PZ1418B15U PINNING - SOT443A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
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OCR Scan
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PZ1418B30U.
OT443A
PZ1418B15U
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PDF
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Untitled
Abstract: No abstract text available
Text: PACKAGE OUTLINES Page SOTIOO 348 SOT122A 349 SOT422A 350 SOT423A 351 SOT437A 352 SOT439A 353 SOT440A 354 SOT441A 355 SOT442A 356 SOT443A 357 SOT445A 358 SOT445B 359 SOT446A 360 SOT447A 361 SOT448A 362 SOT469A 363 Philips Semiconductors Microwave transistors
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OCR Scan
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OT122A
OT422A
OT423A
OT437A
OT439A
OT440A
OT441A
OT442A
OT443A
OT445A
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PDF
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES RZ1214B35Y PINNING - SOT443A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistor providing excellent current sharing and withstanding a high VSWR
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OCR Scan
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RZ1214B35Y
OT443A
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PDF
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transistor w2a
Abstract: w2a 40 w2a transistor RZ1214B65Y
Text: Philips Sem iconductors Product specification NPN microwave power transistor RZ1214B65Y PINNING - SOT443A FE A T U R E S • Interdigitated structure pro vid es high em itter efficiency PIN • D iffused em itter ballasting resistor providing excellent current sh aring and w ithstanding a high V S W R
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OCR Scan
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RZ1214B65Y
OT443A
transistor w2a
w2a 40
w2a transistor
RZ1214B65Y
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PDF
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PZ1418B15U
Abstract: PZ1418B30U SC15
Text: Philips Semiconductors Product specification NPN microwave power transistor PZ1418B15U FEATURES PINNING - SOT443A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
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OCR Scan
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PZ1418B15U
PZ1418B30U.
OT443A.
PZ1418B15U
PZ1418B30U
SC15
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PDF
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GL008
Abstract: PZ1721B25U Philips SSB
Text: Philips Semiconductors Product specification PZ1418B30U; PZ1721B25U; PZ2024B20U NPN microwave power transistors FEATURES PINNING - SOT443A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent
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OCR Scan
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PZ1418B30U;
PZ1721B25U;
PZ2024B20U
OT443A
PZ2024B20U)
GL008
PZ1721B25U
Philips SSB
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PDF
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