Untitled
Abstract: No abstract text available
Text: PC board footprint Philips Semiconductors Footprint information for reflow soldering of HBGA388 package SOT636-1 Hx P P Hy see detail X Generic footprint pattern Refer to the package outline drawing for actual layout solder land solder paste deposit solder land plus solder paste
|
Original
|
HBGA388
OT636-1
OT636-1
|
PDF
|
MS-034
Abstract: SOT636-1
Text: PDF: 2001 Dec 13 Philips Semiconductors Package outline HBGA388: plastic thermal enhanced ball grid array package; 388 balls; body 35 x 35 x 1.75 mm; heatsink SOT636-1 B D A D1 ball A1 index area A j A2 A1 E1 E detail X e1 C 1/2 e e ∅v M C A B b AD AB y
|
Original
|
HBGA388:
OT636-1
MS-034
MS-034
SOT636-1
|
PDF
|
MS-034
Abstract: sot636 SOT636-1
Text: PDF: 2001 Apr 18 Philips Semiconductors Package outline HBGA388: plastic, heatsink ball grid array package; 388 balls; body 35 x 35 x 1.75 mm SOT636-1 B D A D1 ball A1 index area A ∅ j E1 E A2 A1 detail X e1 C v M B b e ∅w M v M A y y1 C AF AE AC AD AB
|
Original
|
HBGA388:
OT636-1
MS-034
MS-034
sot636
SOT636-1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Package outline HBGA388: plastic thermal enhanced ball grid array package; 388 balls; body 35 x 35 x 1.75 mm; heatsink SOT636-1 B D A D1 ball A1 index area A j A2 A1 E1 E detail X e1 C 1/2 e e b ∅v M C A B AD AB Y y y1 C ∅w M C AF AE AC e AA V T P M K
|
Original
|
HBGA388:
OT636-1
MS-034
|
PDF
|
SOT-636-package
Abstract: silicon bipolar transistor rf power amplifier BGA428 amplifier siemens sot-363 sot636 AN063
Text: Application Note No. 063 Silicon Discretes A 1.85 GHz High Gain Low Noise Transistor Amplifier using BGA428 Features • Two-stage Low Noise Amplifier • SIEGET 45-Technology with 45 GHz f T • Small outline SOT363-Package • Low Noise Figure: 1.5 dB at 1.85 GHz
|
Original
|
BGA428
45-Technology
OT363-Package
OT-363.
AN063
SOT-636-package
silicon bipolar transistor rf power amplifier
BGA428
amplifier siemens sot-363
sot636
AN063
|
PDF
|
SOT-636-package
Abstract: sot636
Text: Application Note No. 063 Silicon Discretes A 1.85 GHz High Gain Low Noise Transistor Amplifier using BGA428 Features • Two-stage Low Noise Amplifier • SIEGET 45-Technology with 45 GHz f T • Small outline SOT363-Package • Low Noise Figure: 1.5 dB at 1.85 GHz
|
Original
|
BGA428
45-Technology
OT363-Package
OT-363.
AN063
SOT-636-package
sot636
|
PDF
|
