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    SOURCEGATE Search Results

    SOURCEGATE Datasheets (43)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SGMB201209C070 Sourcegate Technologies Multilayer Ferrite Chip Beads Original PDF
    SGMB201209R102 Sourcegate Technologies Multilayer Ferrite Chip Beads Original PDF
    SGMB201209R122 Sourcegate Technologies Multilayer Ferrite Chip Beads Original PDF
    SGMB201209R152 Sourcegate Technologies Multilayer Ferrite Chip Beads Original PDF
    SGMB201209R202 Sourcegate Technologies Multilayer Ferrite Chip Beads Original PDF
    SGMB201209R601 Sourcegate Technologies Multilayer Ferrite Chip Beads Original PDF
    SGMB201209R751 Sourcegate Technologies Multilayer Ferrite Chip Beads Original PDF
    SGMB201209S101 Sourcegate Technologies Multilayer Ferrite Chip Beads Original PDF
    SGMB201209S102 Sourcegate Technologies Multilayer Ferrite Chip Beads Original PDF
    SGMB201209S110 Sourcegate Technologies Multilayer Ferrite Chip Beads Original PDF
    SGMB201209S121 Sourcegate Technologies Multilayer Ferrite Chip Beads Original PDF
    SGMB201209S151 Sourcegate Technologies Multilayer Ferrite Chip Beads Original PDF
    SGMB201209S152 Sourcegate Technologies Multilayer Ferrite Chip Beads Original PDF
    SGMB201209S170 Sourcegate Technologies Multilayer Ferrite Chip Beads Original PDF
    SGMB201209S221 Sourcegate Technologies Multilayer Ferrite Chip Beads Original PDF
    SGMB201209S260 Sourcegate Technologies Multilayer Ferrite Chip Beads Original PDF
    SGMB201209S301 Sourcegate Technologies Multilayer Ferrite Chip Beads Original PDF
    SGMB201209S310 Sourcegate Technologies Multilayer Ferrite Chip Beads Original PDF
    SGMB201209S401 Sourcegate Technologies Multilayer Ferrite Chip Beads Original PDF
    SGMB201209S520 Sourcegate Technologies Multilayer Ferrite Chip Beads Original PDF

    SOURCEGATE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HP-4921A

    Abstract: SGMB451616S102 SGMB451616S151 SGMB451616S600 SGMB451616S601 SGMB451616S800 SGMB451616S851 4921a
    Text: SOURCEGATE MULTILAYER FERRITE CHIP BEADS TECHNOLOGIES Your Gateway To A Reliable Source SGMB451616 1806 TYPE Electrical Characteristics Impedance (Ω)±25% [100MHz] SGMB451616S600 60 SGMB451616S800 80 SGMB451616S151 150 SGMB451616S601 600 SGMB451616S851


    Original     		PDF SGMB451616 100MHz] SGMB451616S600 SGMB451616S800 SGMB451616S151 SGMB451616S601 SGMB451616S851 50MHz) SGMB451616S102 HP-4921A SGMB451616S102 SGMB451616S151 SGMB451616S600 SGMB451616S601 SGMB451616S800 SGMB451616S851 4921a

    HP-4921A

    Abstract: SGMB201209S121 SGMB201209 SGMB201209S101 SGMB201209S110 SGMB201209S151 SGMB201209S170 SGMB201209S260 SGMB201209S310 SGMB201209S520
    Text: SOURCEGATE MULTILAYER FERRITE CHIP BEADS TECHNOLOGIES Your Gateway To A Reliable Source SGMB201209 0805 TYPE Electrical Characteristics Impedance (Ω)±25% [100MHz] SGMB201209S110 11 SGMB201209S170 17 SGMB201209S260 26 SGMB201209S310 31 SGMB201209S520


    Original     		PDF SGMB201209 100MHz] SGMB201209S110 SGMB201209S170 SGMB201209S260 SGMB201209S310 SGMB201209S520 SGMB201209S600 SGMB201209S800 SGMB201209S101 HP-4921A SGMB201209S121 SGMB201209 SGMB201209S101 SGMB201209S110 SGMB201209S151 SGMB201209S170 SGMB201209S260 SGMB201209S310 SGMB201209S520

    Low Capacitance MOS FET 13005

    Abstract: BF1205C
    Text: BF1205C Dual N-channel dual gate MOS-FET Rev. 02 — 15 August 2006 Product data sheet 1. Product profile 1.1 General description The BF1205C is a combination of two dual gate MOS-FET amplifiers with shared source and gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1


    Original     		PDF BF1205C BF1205C OT363 Low Capacitance MOS FET 13005

    MIXER GHz

    Abstract: B82412-A3820-K FERRITE TOROID CF750
    Text: CF 750 - 250 MHz to 1900 MHz Up-Converter Application Note No. 044 CF 750 is a GaAs-MMIC for amplifier and mixer applications for frequencies up to 3 GHz. It is suitable for use in handheld equipment with low power consumption requirements. Since the CF 750 is not matched to 50 Ω the following design rules have


    Original     		PDF EHT09077 01-coil; B82412-A3820-K MIXER GHz B82412-A3820-K FERRITE TOROID CF750

    04NG

    Abstract: 48 04NG 4804NG 369D
    Text: NTD4804NA Advance Information Power MOSFET 25 V, 117 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices


    Original     		PDF NTD4804NA NTD4804NA/D 04NG 48 04NG 4804NG 369D

    MIXER GHz

    Abstract: B82412-A3221-K CF750
    Text: CF 750 - 1500 MHz to 130 MHz Down-Converter Application Note No. 042 CF 750 is a GaAs-MMIC for amplifier and mixer applications for frequencies up to 3 GHz. It is suitable for use in handheld equipment with low power consumption requirements. Since the CF 750 is not matched to 50 Ω the following design rules have


    Original     		PDF EHT09071 01-coil; B82412-A3221-K MIXER GHz B82412-A3221-K CF750

    CP1L

    Abstract: pwm 001 MC33395 CP2H HSE2 32-PIN 33395T cp1h 98ARH99137A
    Text: Freescale Semiconductor Technical Data Document Number: MC33395 Rev 4.0, 2/2007 Three-Phase Gate Driver IC 33395 33395T The 33395 simplifies the design of high-power BLDC motor control design by combining the gate drive, charge pump, current sense, and protection circuitry necessary to drive a three-phase bridge


    Original     		PDF MC33395 33395T CP1L pwm 001 MC33395 CP2H HSE2 32-PIN 33395T cp1h 98ARH99137A

    Transistor J310

    Abstract: J309 J310 J310 applications CBVK741B019 F63TNR MMBFJ309 MMBFJ310 PN2222N J310 Application Note
    Text: MMBFJ309 MMBFJ310 J309 J310 G D G S TO-92 SOT-23 D S Mark: 6U / 6T N-Channel RF Amplifier This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. Sourced from Process 92.


    Original     		PDF MMBFJ309 MMBFJ310 OT-23 Transistor J310 J309 J310 J310 applications CBVK741B019 F63TNR MMBFJ309 MMBFJ310 PN2222N J310 Application Note

    CP1L

    Abstract: HSE2
    Text: Freescale Semiconductor Technical Data MC33395 Rev 3.0, 11/2005 Document order number: Three-Phase Gate Driver IC 33395 33395T The 33395 simplifies the design of high-power BLDC motor control design by combining the gate drive, charge pump, current sense, and


    Original     		PDF MC33395 CP1L HSE2

    Untitled

    Abstract: No abstract text available
    Text: BF1118; BF1118R; BF1118W; BF1118WR Silicon RF switches Rev. 3 — 14 November 2014 Product data sheet 1. Product profile 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor FET and a band-switching diode. The BF1118, BF1118R, BF1118W and BF1118WR are


    Original     		PDF BF1118; BF1118R; BF1118W; BF1118WR BF1118, BF1118R, BF1118W BF1118WR OT143B, OT143R,

    ELEVATOR LOGIC CONTROL PLC

    Abstract: encoder 80058 80058 ENCODER VMIVME 2540 ERNI rel 14 timer rel 14 ERNI rel 14 a1 5.5 erni PLC ELEVATOR CONTROL VMIVME-2540 M68030
    Text: VMIVME-2540 Intelligent Counter/Controller Product Manual 256 880-0444 w 12090 South Memorial Parkway Huntsville, Alabama 35803-3308, USA (800) 322-3616 w Fax: (256) 882-0859 500-002540-000 Rev. N (256) 880-0444 w 12090 South Memorial Parkway Huntsville, Alabama 35803-3308, USA


    Original     		PDF VMIVME-2540 VMIVME-2540 ELEVATOR LOGIC CONTROL PLC encoder 80058 80058 ENCODER VMIVME 2540 ERNI rel 14 timer rel 14 ERNI rel 14 a1 5.5 erni PLC ELEVATOR CONTROL M68030

    Untitled

    Abstract: No abstract text available
    Text: BF1205C Dual N-channel dual gate MOS-FET Rev. 3 — 7 September 2011 Product data sheet 1. Product profile 1.1 General description The BF1205C is a combination of two dual gate MOS-FET amplifiers with shared source and gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1


    Original     		PDF BF1205C BF1205C OT363

    BF1208

    Abstract: transistor BF1208 Dual N-channel dual gate MOSFET MARKING CODE 2l mosfet 7810
    Text: 66 SO T6 BF1208 Dual N-channel dual gate MOSFET Rev. 2 — 7 September 2011 Product data sheet 1. Product profile 1.1 General description The BF1208 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The integrated switch is operated by the gate1


    Original     		PDF BF1208 BF1208 OT666 transistor BF1208 Dual N-channel dual gate MOSFET MARKING CODE 2l mosfet 7810

    hg1b

    Abstract: marking 822 sot363
    Text: BF1207 Dual N-channel dual gate MOSFET Rev. 2 — 7 September 2011 Product data sheet 1. Product profile 1.1 General description The BF1207 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The source and substrate are interconnected. Internal bias circuits enable Direct Current


    Original     		PDF BF1207 BF1207 OT363 hg1b marking 822 sot363

    J108

    Abstract: MMBFJ108
    Text: N-Channel Switch 3 • This device is designed for digital switching applications where very low on resistance is mandatory. • Sourced from Process 58. 2 1 TO-92 1. Drain 2. Source 3. Gate 1 SuperSOT-3 Marking: I8 1. Drain 2. Source 3. Gate Absolute Maximum Ratings * TA=25°C unless otherwise noted


    Original     		PDF

    SST174 P04

    Abstract: J177 j174 EQUIVALENT J176 SST177 2N5114 J174 J175 SST174 SST175
    Text: P-Channel JFET Switch CORPORATION J174 – J177 / SST174 – SST177 FEATURES • Low Insertion Loss • No Offset or Error Generated By Closed Switch Resistive - Purely - High Isolation Resistance From Driver • Short Sample and Hold Aperture Time • Fast Switching


    Original     		PDF SST174 SST177 -55oC 150oC 135oC 10sec) SST174 P04 J177 j174 EQUIVALENT J176 SST177 2N5114 J174 J175 SST174 SST175

    VCR2N

    Abstract: jfet transistor for VCR AN105
    Text: VCR2N/4N/7N Vishay Siliconix JFET Voltage-Controlled Resistors PRODUCT SUMMARY Part Number VGS off Max (V) V(BR)GSS Min (V) rDS(on) Max (W) VCR2N −7 −25 60 VCR4N −7 −25 600 VCR7N −5 −25 8000 FEATURES BENEFITS APPLICATIONS D Continuous Voltage-Controlled


    Original     		PDF 18-Jul-08 VCR2N jfet transistor for VCR AN105

    A1668

    Abstract: r50 transistor 00-B
    Text: TMF3202Z Semiconductor Dual Gate MOSFET □ Description SOT-343 Unit in mm The TMF3202Z is an enhancement type N-channel field-effect transistor. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good crossmodulation performance during AGC. Integrated diodes between


    Original     		PDF TMF3202Z TMF3202Z OT-343 OT-343 00MHz 000GHz) A1668 r50 transistor 00-B

    LM373

    Abstract: MC1303L LM566 "direct replacement" transistor BD 540 LYS MFC6030 LM566 equivalent LM3039 SN72558P LM370 SN72741P
    Text: Edge Index by Product Family Here is the new Linear Data Handbook from National. It gives complete specifications for devices useful in building nearly all types of electronic systems, from communica­ tions and consumer-oriented circuits to precision instrumentation and computer designs.


    OCR Scan     		PDF 92260-Fontenay-Aux-Roses 25956F HX3866 LM373 MC1303L LM566 "direct replacement" transistor BD 540 LYS MFC6030 LM566 equivalent LM3039 SN72558P LM370 SN72741P

    J111 national

    Abstract: J112 J113 25CC J111 MMBFJ111 MMBFJ112 MMBFJ113 MARK 6C SOT-23 k20a
    Text: S e m i c o n d u c t o r " J111 J112 J113 G MMBFJ111 MMBFJ112 MMBFJ113 T O -9 2 D M ark: 6 P / 6 R / 6 S N-Channel Switch T his device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers. Sourced from Proce ss 51.


    OCR Scan     		PDF MMBFJ111 MMBFJ112 MMBFJ113 OT-23 D0M0T33 J111 national J112 J113 25CC J111 MMBFJ113 MARK 6C SOT-23 k20a

    2N3819 equivalent

    Abstract: MPF111 2N3821-4 2N5045 2N3819 2N3921-2 2N4220-2 2N4223-24 2N5457-9 2N5556-58
    Text: designed fo r B . S ilic o n ix Performance Curves NRL See Section 5 • G eneral Purpose Am plifiers MPF109 n-channel JFET B E N E F IT S • Low Cost ■ Analog Switches • Autom atic Insertion Package TO -92 See Section 7 A B S O L U T E M AXIM UM R A T IN G S 25°C


    OCR Scan     		PDF

    2N5653

    Abstract: 2N5654
    Text: 2N5654 2N5653 s »channel JFETs designed for S ilic o n ix . Performance Curves NC See Section 5 • Analog Switches ■ Commutators ■ Choppers B E N E F IT S • Low Cost • Automatic Insertion Package • High Speed tQisi + t Q F F = 24 ns Max 2N5653


    OCR Scan     		PDF 2N5653) -65to 2N5653I 2N5654) 10VOC 2N5653 2N5654

    J108

    Abstract: J109 J110
    Text: E SOLI» STATE DI ]>E|BÛ7SGfll G011D4E 1 | 3875081 6 E SOLID STATE J108-J110 G 01E 11042 J108-J110 N-Channel JFET Switch T — 3 5 - 3lS FEATURES APPLICATIONS • Low Cost • Analog Switches • Automated Insertion Package • Choppers • Low Insertion Loss


    OCR Scan     		PDF J108-J110 300ps; J108 J109 J110

    2N5640 equivalent

    Abstract: 2N5640 2N5638 2N5639 2N5638 equivalent 2N5638-40 J111 J111 equivalent
    Text: caloric N-Channel JFET Switch CORPORATION 2N5638- 2N5640 ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified Drain-Source Drain-Gate Voltage .30V


    OCR Scan     		PDF 2N5638-2N5640 10sec) 310mW 82mW/Â 2N5640) 16MM322 10VDC MM352 2N5640 equivalent 2N5640 2N5638 2N5639 2N5638 equivalent 2N5638-40 J111 J111 equivalent