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    Infineon Technologies AG

    Infineon Technologies AG IPW60R199CP

    MOSFETs N-Ch 650V 16A TO247-3 CoolMOS CP
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    Mouser Electronics IPW60R199CP 238
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    Infineon Technologies AG IPW60R199CPFKSA1

    MOSFETs N-Ch 650V 16A TO247-3 CoolMOS CP
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    SP000089802 Datasheets (1)

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    SP000089802 Infineon Technologies CoolMOS Power Transistor Original PDF

    SP000089802 Datasheets Context Search

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    6R199P

    Abstract: 6R199 IPW60R199CP PG-TO-247-3 IPW60R199 JESD22 SP000089802
    Text: IPW60R199CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


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    IPW60R199CP PG-TO247-3 SP000089802 6R199P 009-134-A O-247 6R199P 6R199 IPW60R199CP PG-TO-247-3 IPW60R199 JESD22 SP000089802 PDF

    ISS 99 diode

    Abstract: 6R199P IPW60R199 6R19 IPW60R199CP
    Text: IPW60R199CP CoolMOSTM Power Transistor Product Summary Features V DS • Lowest figure-of-merit R ONxQg 600 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


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    IPW60R199CP PG-TO247-3-1 IPW60R199CP PG-TO247-3-1 SP000089802 6R199P ISS 99 diode 6R199P IPW60R199 6R19 PDF

    Untitled

    Abstract: No abstract text available
    Text: IPW60R199CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original
    IPW60R199CP PG-TO247-3 SP000089802 6R199P 009-134-A O-247 PDF

    6R199P

    Abstract: 6R199P mosfet 6R199P+mosfet
    Text: IPW60R199CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original
    IPW60R199CP PG-TO247-3 SP000089802 6R199P 6R199P 6R199P mosfet 6R199P+mosfet PDF

    Untitled

    Abstract: No abstract text available
    Text: IPW60R199CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V 33 Q g,typ nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original
    IPW60R199CP PG-TO247-3 SP000089802 6R199P PDF

    600V igbt dc to dc buck converter

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635
    Text: Infineon Product Catalog for Distribution 2008 Infineon Product Catalog for Distribution 2008 Product Catalog for Distribution Ordering No. B192-H6780-G11-X-7600 Published by Infineon Technologies AG [ www.infineon.com ] [ www.infineon.com/distribution ]


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    B192-H6780-G11-X-7600 SP000008186 VDSL6100i-E 600V igbt dc to dc buck converter TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635 PDF

    6R199P

    Abstract: 6R199P mosfet IPW60R199CP PG-TO-247-3 6R199 JESD22 SP000089802 6R19
    Text: IPW60R199CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original
    IPW60R199CP PG-TO247-3 SP000089802 6R199P 6R199P 6R199P mosfet IPW60R199CP PG-TO-247-3 6R199 JESD22 SP000089802 6R19 PDF

    6R199P

    Abstract: 6R199P DATA SHEET mosfet 6R199 6R199 IPW60R199CP JESD22 SP000089802
    Text: IPW60R199CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original
    IPW60R199CP PG-TO247-3-1 SP000089802 6R199P 6R199P 6R199P DATA SHEET mosfet 6R199 6R199 IPW60R199CP JESD22 SP000089802 PDF

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original
    B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 PDF

    6R199P

    Abstract: 6R199P mosfet 6R199 6R199P DATA SHEET mosfet 6R199 IPW60R199CP SP000089802 IPW60R199 JESD22
    Text: IPW60R199CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original
    IPW60R199CP PG-TO247-3-1 SP000089802 6R199P 6R199P 6R199P mosfet 6R199 6R199P DATA SHEET mosfet 6R199 IPW60R199CP SP000089802 IPW60R199 JESD22 PDF

    TLE4957C

    Abstract: SLE66R35E7 SAK-XC2060M-104F80L AA ESD204 SAF-XC2268M-72F66L AA xc2336 tle7242 TLE5041 2EDL23N06 BTN7970
    Text: Ask Infineon. Get connected with the answers. Infineon offers its toll-free 0800/4001 service hotline as one central number, available 24/7 in English, Mandarin and German. Our global connection service goes way beyond standard switchboard services by offering qualified support on the phone. Call us!


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