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    Festo DASP-B6-60-C-SR

    SENSOR RAIL
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    DigiKey DASP-B6-60-C-SR Bulk 1
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    Festo DASP-B6-60-C-SR (ALTERNATE: 3528767)

    Sensor Rail, strip, sz 10, for mounting sensors | Festo DASP-B6-60-C-SR
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    RS DASP-B6-60-C-SR (ALTERNATE: 3528767) Bulk 1
    • 1 $29.66
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    SPB66 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SPB-66S Sanken Electric Silicon Diodes / Silicon Varistors Original PDF
    SPB-66S Sanken Electric Schottky Barrier Diode - 60V Original PDF

    SPB66 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SPB66 Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current6.0 @Temp (øC) (Test Condition)40ð V(RRM)(V) Rep.Pk.Rev. Voltage600 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.200 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)3.0


    Original     		SPB66 Voltage600 Current10u PDF

    FMB-26

    Abstract: FMB-26L FMB-36 FMB-G16L FME-2106 SFPB-56 SFPB-66 SFPB-76 SFPW-56 SPB-66S
    Text: Schottky Barrier Diodes VF V max IF (A) VR = VRM max Half-cycle Sinewave Single Shot Bridge • External Dimensions 0.62 0.7 1 100 20 0.072 82 –40 to +150 0.7 1.5 1 70 150 (Tj) 20 0.072 95 2.0 25 –40 to +150 0.69 2.0 1 15 100 20 0.072 2.0 40 –40 to +150


    Original     		PDF

    FMB-36M

    Abstract: FMB26L SF-PW
    Text: Schottky Barrier Diodes VF V max IF (A) VR = VRM max Half-cycle Sinewave Single Shot Bridge • External Dimensions 0.62 0.7 1 100 20 0.072 82 –40 to +150 0.7 1.5 1 70 150 (Tj) 20 0.072 95 2.0 25 –40 to +150 0.69 2.0 1 15 100 20 0.072 2.0 40 –40 to +150


    Original     		PDF

    FMB-26

    Abstract: FMB-26L FMB-36 FMB-G16L FME-2106 SFPB-56 SFPB-66 SFPB-76 SFPW-56 SPB-66S
    Text: Schottky Barrier Diodes VF V max IF (A) VR = VRM max Half-cycle Sinewave Single Shot Bridge • External Dimensions 0.62 0.7 1 100 20 0.072 82 –40 to +150 0.7 1.5 1 70 150 (Tj) 20 0.072 95 2.0 25 –40 to +150 0.69 2.0 1 15 100 20 0.072 2.0 40 –40 to +150


    Original     		PDF

    66s 66

    Abstract: FMB-26 FMB-26L FMB-36 FMB-G16L FME-2106 SFPB-56 SFPB-66 SFPB-76 SFPW-56
    Text: Schottky Barrier Diodes VF V max IF (A) VR = VRM max Half-cycle Sinewave Single Shot Bridge • External Dimensions 0.62 0.7 1 100 20 0.072 82 –40 to +150 0.7 1.5 1 70 150 (Tj) 20 0.072 95 2.0 25 –40 to +150 0.69 2.0 1 15 100 20 0.072 2.0 40 –40 to +150


    Original     		PDF

    diode 8603

    Abstract: SOT23 1Z FMV-3HU RM2C RN4Z General FBT UX-F5B 3gu diode diode RBV-406M Part marking
    Text: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41


    Original     		VR-60SS VR-61SS diode 8603 SOT23 1Z FMV-3HU RM2C RN4Z General FBT UX-F5B 3gu diode diode RBV-406M Part marking PDF

    Untitled

    Abstract: No abstract text available
    Text: 4-4 Schottky Barrier Diodes Standard ●Surface-Mount VRM V IF (AV) (A) 40 60 90 100 Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) Tstg (°C) VF (V) max IF (A) IR (mA) VR=VRM max IR(H) (mA) VR=VRM max Ta (°C) 30 40 188 Mass (g) 1.0 Surface-Mount (SFP)


    Original     		SFPB-54 SFPB-64 SFPB-74 SPB-G34S SPB-G54S PDF

    B 2306 BARRIER RECTIFIER

    Abstract: diode RU 3B FMQ2FU RBV-406 UX-F5B w 2206 schottky fmv -30j EZ0150 fmu 22 u FMP-3FU
    Text: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41


    Original     		VR-60SS VR-61SS B 2306 BARRIER RECTIFIER diode RU 3B FMQ2FU RBV-406 UX-F5B w 2206 schottky fmv -30j EZ0150 fmu 22 u FMP-3FU PDF

    fmb24l

    Abstract: FMB24 fmb34m fmb2204 FMW24L FMW24
    Text: 4-4 Schottky Barrier Diodes 4-4-2 2 Chip Part No. VRM IO VF IR V (A) (V) (mA) SPJ-63S 6.0 Package Fig. No. Surface mount (D pack) 1 0.45 3.0 10 0.45 5.0 20 0.45 10 30 0.45 15 0.55 5.0 TO-220F 0.55 3.5 Surface mount (D pack) 0.55 5.0 TO-220F 0.55 5.0 0.55


    Original     		SPJ-63S FMJ-23L FMJ-2203 FMJ-2303 FMB-24 SPB-64S FMB-24M FMW-24L FMB-24L FME-2104 fmb24l FMB24 fmb34m fmb2204 FMW24L FMW24 PDF

    UX-F5B

    Abstract: UX-F5B diode RG-2A Diode shv-30j FMQ2FU axial package fmp2fur
    Text: Selection Guide Rectifier Diodes ●1 in one-package VRM V 100 IF (A) I FSM (A) 1.0 45 3.0 200 0.9 30 45 35 1.0 45 45 200 50 1.2 100 80 1.5 120 3.0 200 0.9 30 45 50 1.0 35 45 45 400 50 80 1.2 150 100 80 2.5 150 3.0 200 35 1.0 45 45 50 80 600 150 1.2 100


    Original     		O-220F RZ1030 RZ1040 RZ1055 RZ1065 RZ1100 RZ1125 RZ1150 UX-F5B UX-F5B diode RG-2A Diode shv-30j FMQ2FU axial package fmp2fur PDF

    SE012

    Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
    Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)


    Original     		2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1386A 2SA1488 SE012 SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611 PDF

    FMPG2F

    Abstract: zener diode reference guide diode MARKING 30J MICROWAVE OVEN HIGH VOLTAGE RECTIFIER DIODE - HVR diode hvr 1x FMB-34M sot23 3F mark fmlg12 RBV SOT23 marking code RBV SOT23
    Text: Bulletin No. D01ED0 Oct., 2000 SI LICON DIODES SILICON VARISTORS CAUTION / WARNING The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Sanken reserves the right to make changes without further notice to any products herein in


    Original     		D01ED0 SFPJ-63 VR-60SS SFPJ-73 VR-61SS SFPL-52 SFPL-62 SFPM-52 FMPG2F zener diode reference guide diode MARKING 30J MICROWAVE OVEN HIGH VOLTAGE RECTIFIER DIODE - HVR diode hvr 1x FMB-34M sot23 3F mark fmlg12 RBV SOT23 marking code RBV SOT23 PDF

    FMB-26

    Abstract: FMB-26L FMB-36 FMB-G16L FME-2106 SFPB-56 SFPB-66 SFPB-76 SFPW-56 SPB-66S
    Text: Schottky Barrier Diodes Tj °C 50Hz VF (V) max IF (A) VR = VRM max Half-cycle Sinewave Single Shot • External Dimensions 0.62 0.7 1 100 20 0.072 81 –40 to +150 0.7 1.5 1 70 150 (Tj) 20 0.072 94 2.0 25 –40 to +150 0.69 2.0 1 15 100 20 0.072 2.0 40 –40 to +150


    Original     		FME-2106 FMB-26 FMB-26L FMB-36 FMB-G16L FME-2106 SFPB-56 SFPB-66 SFPB-76 SFPW-56 SPB-66S PDF

    FMB36M

    Abstract: No abstract text available
    Text: Schottky Barrier Diodes VF V max IF (A) VR = VRM max Half-cycle Sinewave Single Shot Bridge • External Dimensions 0.62 0.7 1 100 20 0.072 82 –40 to +150 0.7 1.5 1 70 150 (Tj) 20 0.072 95 2.0 25 –40 to +150 0.69 2.0 1 15 100 20 0.072 2.0 40 –40 to +150


    Original     		FMB-39M FMB36M PDF

    SFPW-56

    Abstract: SPB-66S SPB-G56S FMB-26 FMB-26L FMB-36 FMB-G16L FME-2106 SFPB-56 SFPB-66
    Text: Schottky Barrier Diodes VF V max IF (A) VR = VRM max Half-cycle Sinewave Single Shot Bridge • External Dimensions 0.62 0.7 1 100 20 0.072 82 –40 to +150 0.7 1.5 1 70 150 (Tj) 20 0.072 95 2.0 25 –40 to +150 0.69 2.0 1 15 100 20 0.072 2.0 40 –40 to +150


    Original     		PDF

    2SC5586 equivalent

    Abstract: 2sc5586 2sa1694 equivalent 2SC5487 transistor 2SC5586 STR83159 em 234 stepper SE090 SK 5154S 2SK3460 equivalent
    Text: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein in the interest of improvements


    Original     		TM1641S-L TM1661B-L TM1661P-L TM1661S-L TM2541B-L TM2561B-L TM341M-L TM341S-L TM341S-R TM361M-L 2SC5586 equivalent 2sc5586 2sa1694 equivalent 2SC5487 transistor 2SC5586 STR83159 em 234 stepper SE090 SK 5154S 2SK3460 equivalent PDF

    SFPJ-73

    Abstract: No abstract text available
    Text: 4-4 Schottky Barrier Diode Standard ●Surface-Mount V RM V 40 60 90 IF (AV) (A) Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H) (mA) VR=V RM max Ta (°C) Rth(j-l) Rth(j-c) (°C/W)


    Original     		SFPB-54 SFPB-64 SFPB-74 SPB-G34S SPB-G54S SFPJ-73 PDF

    em 234 stepper

    Abstract: 2SC5586 equivalent 8002 1018 AUDIO amplifier 2SC5586 2SC5487 voltage doubler bridge varistor 560-2 2sa2003 se125n SE090
    Text: Bulletin No O01ED0 Jun.,2001 SEMICONDUCTORS SHORT FORM CATALOG ICs TRANSISTORS THYRISTORS DIODES LIGHT EMITTING DIODES CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility


    Original     		O01ED0 H1-O01ED0-0106030ND em 234 stepper 2SC5586 equivalent 8002 1018 AUDIO amplifier 2SC5586 2SC5487 voltage doubler bridge varistor 560-2 2sa2003 se125n SE090 PDF

    RN4Z

    Abstract: No abstract text available
    Text: Characteristic Curves Rectifier Diodes SFPM-5 series 0.6 0.4 0.1 Ta = 150°C 100°C 60°C 25°C 0.01 t 1.6 P.C.B. Solder Land = 3.0 35µmCu 25 50 75 100 125 Ambient Temperature Ta °C 150 0.001 0.3 0.5 0.7 0.9 1.1 1.3 Forward Voltage VF (V) 30 25 20ms 20


    Original     		PDF

    FMB-G16L

    Abstract: FMB-2206 FMB-2306 FMB-26 FMB-26L FMB-36 SFPB-56 SFPB-66 SFPB-76 SPB-66S
    Text: Schottky Barrier Diodes Part Number Rth j- Rth (j-c) (°C/W) Mass (g) 100 20 0.072 10 –40 to +150 0.62 0.7 1 SFPB-66 2.0 25 –40 to +150 0.69 2.0 1 15 100 20 0.072 SFPB-76 2.0 40 –40 to +150 0.62 2.0 2 20 100 20 0.072 SPB-G56S 5.0 60 –40 to +150


    Original     		SFPB-56 SPB-66S RBV-406B FMB-26L FMB-G16L FMB-2206 FMB-2306 FMB-26 FMB-26L FMB-36 SFPB-56 SFPB-66 SFPB-76 SPB-66S PDF

    Varistor RU

    Abstract: SE110N transistor 2SC5487 2SA2003 SE090N high voltage transistor SE090 RBV-406 2SC5586
    Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)


    Original     		2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1386A 2SA1488 Varistor RU SE110N transistor 2SC5487 2SA2003 SE090N high voltage transistor SE090 RBV-406 2SC5586 PDF

    w 2206 schottky

    Abstract: fmb26l EK 110 FMB-26 FMB-26L FMB-36 FMB-G16L FME-2106 SFPB-56 SFPB-66
    Text: Schottky Barrier Diodes VF V max IF (A) VR = VRM max Half-cycle Sinewave Single Shot Bridge • External Dimensions 0.62 0.7 1 100 20 0.072 82 –40 to +150 0.7 1.5 1 70 150 (Tj) 20 0.072 95 2.0 25 –40 to +150 0.69 2.0 1 15 100 20 0.072 2.0 40 –40 to +150


    Original     		PDF

    2SC5586

    Abstract: transistor 2SC5586 diode RU 3AM 2SA2003 microwave oven diode single phase bridge rectifier IC with output 1A 2SC5487 RG-2A Diode Dual MOSFET 606 TFD312S-F
    Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)


    Original     		2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1386A 2SA1488 2SC5586 transistor 2SC5586 diode RU 3AM 2SA2003 microwave oven diode single phase bridge rectifier IC with output 1A 2SC5487 RG-2A Diode Dual MOSFET 606 TFD312S-F PDF

    smp86

    Abstract: SMP81 SBR805 SBR81 SBR82 SBR84 SP8605 SPB61 l300l SPB62
    Text: SINO-AflERICAN SILICON 24E • fl2fll74ti □□□OQSS 4 ■ B R I D G E R E C T IF IE R S T~-Z3>-o7 OPERATING TEMPERATURE RANGE: -5 5 ° C to +125°C STORAGE TEMPERATURE RANGE: -5 5 ° C to +150°C TYPE Maximum Peak Reverse Voltage Maximum Average Rectified Current


    OCR Scan     		SP8605 SPB61 SPB62 SPB64 SPB66 SPB68 SPB610 DO-41 350x350x345 DO-15 smp86 SMP81 SBR805 SBR81 SBR82 SBR84 l300l PDF