Untitled
Abstract: No abstract text available
Text: DIODE MODULE Spec.No.SR2-SP-10001 R1 MDM800H45E2-H Target Specification FEATURES ∗ Low Reverse Recovery Loss diode module. ∗ Low noise recovery: Ultra soft fast recovery diode. ∗ High reverse recovery capability: Super HiRC Structure. ∗ High reliability, high durability diodes.
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SR2-SP-10001
MDM800H45E2-H
MDM800H45r
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MDM1200H45E2-H
Abstract: mbn1200h45e2-h MBN1200H45
Text: DIODE MODULE Spec.No.SR2-SP-09005 R4 MDM1200H45E2-H P1 Preliminary Specification FEATURES ∗ Low Reverse Recovery Loss diode module. ∗ Low noise recovery: Ultra soft fast recovery diode. ∗ High reverse recovery capability: Super HiRC Structure. ∗ High reliability, high durability diodes.
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SR2-SP-09005
MDM1200H45E2-H
MDM1200H45Er
MDM1200H45E2-H
mbn1200h45e2-h
MBN1200H45
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PDF
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Untitled
Abstract: No abstract text available
Text: DIODE MODULE Spec.No.SR2-SP-10001 R2 P1 MDM800H45E2-H Target Specification FEATURES Low Reverse Recovery Loss diode module. Low noise recovery: Ultra soft fast recovery diode. High reverse recovery capability: Super HiRC Structure. High reliability, high durability diodes.
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SR2-SP-10001
MDM800H45E2-H
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P4 diode
Abstract: MBN500H65E2 p5 diode
Text: DIODE MODULE Spec.No.SR2-SP-09007 R1 MDM500H65E2 Preliminary Specification FEATURES ∗ Low noise recovery: Ultra soft fast recovery diode. ∗ High reverse recovery capability: Super HiRC Structure. ∗ High reliability, high durability diodes. ∗ Isolated heat sink terminal to base .
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SR2-SP-09007
MDM500H65E2
P4 diode
MBN500H65E2
p5 diode
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Untitled
Abstract: No abstract text available
Text: DIODE MODULE Spec.No.SR2-SP-09003 R3 MDM750H65E2 Preliminary Specification FEATURES ∗ Low noise recovery: Ultra soft fast recovery diode. ∗ High reverse recovery capability: Super HiRC Structure. ∗ High reliability, high durability diodes. ∗ Isolated heat sink terminal to base .
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SR2-SP-09003
MDM750H65E2
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Untitled
Abstract: No abstract text available
Text: DIODE MODULE Spec.No.SR2-SP-09007 R4 MDM500H65E2 Preliminary Specification FEATURES Low noise recovery: Ultra soft fast recovery diode. High reverse recovery capability: Super HiRC Structure. High reliability, high durability diodes. Isolated heat sink terminal to base .
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SR2-SP-09007
MDM500H65E2
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PDF
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3AG1A
Abstract: No abstract text available
Text: DIODE MODULE Spec.No.SR2-SP-09007 R2 MDM500H65E2 Preliminary Specification FEATURES ∗ Low noise recovery: Ultra soft fast recovery diode. ∗ High reverse recovery capability: Super HiRC Structure. ∗ High reliability, high durability diodes. ∗ Isolated heat sink terminal to base .
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Original
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SR2-SP-09007
MDM500H65E2
3AG1A
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t4 sot23 diode
Abstract: marking code T4 SOT-23 T4 marking code sot 23 MMBD6100 marking T4 sot23 MMBD6100 diode
Text: BL Galaxy Electrical Production specification Surface mount switching diode MMBD6100 FEATURES Pb z High conductance. z Fast switching. z Surface mount package ideally suited for Lead-free automatic insertion. APPLICATIONS z For general purpose and switching application.
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MMBD6100
OT-23
BL/SSSDC134
t4 sot23 diode
marking code T4 SOT-23
T4 marking code sot 23
MMBD6100
marking T4 sot23
MMBD6100 diode
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Untitled
Abstract: No abstract text available
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Diode 1N4148W FEATURES Pb z Fast Switching Speed:trr=4ns Typ z Surface Mount Package Ideally Suited For Lead-free Automatic Insertion z For General Purpose Switching Applications z High Conductance
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1N4148W
OD-123
BL/SSSDA001
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PDF
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET 1PS74SB23 Schottky barrier diode 1999 Apr 26 Product specification Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification Schottky barrier diode FEATURES 1PS74SB23 PINNING • Ultra fast sw itching speed
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1PS74SB23
115002/00/01/pp8
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PDF
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Untitled
Abstract: No abstract text available
Text: bbS3R31 DDS7QSS T4b * A P X b'lE » N AMER PHILIPS/DISCRETE Philips Semiconductors Preliminary specification 1PS184 High speed double diode FEATURES QUICK REFERENCE DATA • Plastic SMD envelope SYMBOL • High speed Per diode • General application. CONDITIONS
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bbS3R31
1PS184
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PDF
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1PS184
Abstract: smd marking code KN SC59 high speed double diode
Text: N AME R PHILIPS/DISCRETE bTE bbS3T31 D QGS7QSS Philips Semiconductors T4b * A P X Preliminary specification High speed double diode FEATURES QUICK REFERENCE DATA • Plastic SMD envelope SYMBOL • High speed Per diode • General application. PARAMETER CONDITIONS
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bbS3T31
1PS184
1PS184
smd marking code KN
SC59
high speed double diode
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PDF
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181 PH diode
Abstract: 1PS75SB45 645 LEM
Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Nov 07 Philips Sem iconductors 1999 Apr 26 PHILIPS Philips Semiconductors Product specification Schottky barrier double diode 1PS75SB45 FEATURES DESCRIPTION • Low forw ard voltage Planar S chottky b a rrie r double diode encapsulated in a S O T 4 1 6 SC 75 ultra
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1PS75SB45
MAM377
115002/00/02/pp8
181 PH diode
1PS75SB45
645 LEM
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PDF
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DIODE SMD t04
Abstract: BAV105 smd T04 PHILIPS SMALL SIGNAL DIODE
Text: Philips Semiconductors Product specification High-speed diode BAV105 FEATURES DESCRIPTION • Small hermetically sealed glass SMD package The BAV105 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small hermetically sealed glass SOD8OC SMD
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BAV105
DIODE SMD t04
BAV105
smd T04
PHILIPS SMALL SIGNAL DIODE
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1N843
Abstract: 1N682 1N683 1N863 CI 4011 SJ 2036 1N643 1N662 1N663 IN862
Text: 26 August 1971 SUPERSEblNG M IL-S-18500/258B MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, TYPES 1N643, 1N662 AND 1N663 This specification la m andatory for use by a ll D epart m ents and Agencies of the D epartm ent d befense?"
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MIL-S-19500/256C
MIL-S-10500/258B
1N643,
1N662
1N663
1N643
1N082
1N863
1N843
1N682
1N683
CI 4011
SJ 2036
1N663
IN862
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PDF
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Untitled
Abstract: No abstract text available
Text: 1. SCOPE This specification provide the ratings and the requirements for high voltage silicon diode ESJA53-18A made by FUJI ELECTRIC CO.,LTD. 2. OUT VIEW Shape and dimensions are described in Fig.3. 3. IDENTIFICATION The diode sha11 be marked with Cathode Mark and Lot No.
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ESJA53-18A
sha11
ESJA53-f
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PDF
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SIR34ST3
Abstract: No abstract text available
Text: MDE D ROHM CO LTD • 7020^*1 GOGbflb? 4 ■ RHM Page lu n ir n Specification Products Type [ ol ^ SIR-34ST3 SIR-34ST3 GaAs INFRARED EMITTING DIODE The SIR-34ST3 is a gallium arsenide infrared diode with transparent plastic encapsulation. The device is designed to accomodate needs of optical remote control
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SIR-34ST3
SIR-34ST3
950nm
T-41-11
SIR34ST3
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PDF
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Untitled
Abstract: No abstract text available
Text: S p e c u la t io n JAN 1 6 1386 & ekPk Page 1 Proaucts °* 2 f Type Tentative INFRA-RED LIGHT EMITTING DIODE 1. SCOPE This specification covers the detail require ments for GaAs Infra-red Light Emitting Diode. im am SIR-56ST3 RHI1 ftEB K im ^ 2. PHYSICAL DIMENSIONS
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SIR-56ST3
-------------------150mA
100mA
100mA
T-41-11
SIR-56ST?
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PDF
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y 0104
Abstract: LNJC36X8ARA1 Ice blue small chromaticity difference IF5 560 2.5 DIODE 0206
Text: T E N T A T IV E Prepared HS3=ttii/Tentative Specification Checked Approved p ' t jP > ^ T.Onizuka .j CT.Maeda T.lkeda p n flii/T y p e Number:LNJC36X8ARA1 pq S/Matsushita Unified Parts Number : LNJC36X8ARA1 T47s~3 \/— K / Ice Blue Light Emitting Diode ESS
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LNJC36X8ARA1
LNJC36X8ARA1
KB-H-040-01B
14/Polarity
y 0104
Ice blue
small chromaticity difference
IF5 560 2.5
DIODE 0206
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PDF
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05641
Abstract: optical head laser cd disk laser diode 780 nm cd NDL3009 J22686
Text: ~~ ~5T _ 6 4 2 752 5 N E C ELECTRONICS 59C INC 05641 D T -41-05 D eT | t,427SE5 D D 0 S b 4 1 b TENTATIVE SPECIFICATION NEC LASER DIODE ELECTRON DEVICE N DL3009 DAD, VD APPLICATION AIGaAs DOUBLE HETERO STRU CTU RE LA SER DIODE SEP. 7,1984 DESCRIPTIO N NDL300g laser diode is developed for D A D Digital Audio D isk , Video Disk optical head and non impact laser printer.
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ta457SES
DDOSb41
T-41-05
NDL3009
NDL300g
42752S
J22686
05641
optical head laser cd disk
laser diode 780 nm cd
NDL3009
J22686
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PDF
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BY328
Abstract: BY-328 by32B
Text: Philips Semiconductors Product specification Damper diode BY328 FEATURES DESCRIPTION • Glass passivated Rugged glass package, using a high temperature alloyed construction. • High maximum operating temperature This package is hermetically sealed and fatigue free as coefficients of
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BY328
7110A2k
BY328
BY-328
by32B
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PDF
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Bz027
Abstract: C510 C82 diode BZD27 c82 004 BZD27-C3V6 BZD27-C7V5 C100 C270 C7V5
Text: Philips Sem icpnductors DD 2b 72D 52T BBAPX Product specification Voltage regulator diodes BZD27 series N AMER PHILIPS/DISCRETE DESCRIPTION Glass-passivated diodes in hermetically sealed leadless surlace mounted implosion diode SMID glass envelopes. They are intended
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QQ2b72G
BZD27
BZD27-C3V6
BZD27-C7V5
C7V5-C510
MSA020
0D2b72fl
S0D87.
Bz027
C510
C82 diode
c82 004
C100
C270
C7V5
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PDF
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bv228
Abstract: BY22B BY228
Text: Philips Semiconductors Product specification Damper diode BY228 FEATURES DESCRIPTION • Glass passivated Rugged glass package, using a high temperature alloyed construction. • High maximum operating temperature This package is hermetically sealed and fatigue free as coefficients of
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OCR Scan
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BY228
MAM104
711002b
bv228
BY22B
BY228
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PDF
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Marking A2t smd
Abstract: sot143 marking code JTp A2t diode smd Z3B DIODE smd diode code a2t high speed double diode sot143
Text: Philips Semiconductors Product specification High-speed double diode BAS56 FEATURES DESCRIPTION • Small plastic SMD package The BAS56 consists of two high- . High switching speed: max. 6 ns . Continuous reverse voltage: max • Repetitive peak reverse voltage:
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BAS56
BAS56
OT143
OT143)
711002b
Marking A2t smd
sot143 marking code JTp
A2t diode smd
Z3B DIODE
smd diode code a2t
high speed double diode sot143
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PDF
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