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    SPN2302DS23RG

    Abstract: marking 6A SOT 23 sot-23 MOSFET Marking code 6A mosfet vgs 5v SOT23 marking 31A sot-23
    Text: SPN2302D N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2302D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state


    Original     		SPN2302D SPN2302D SPN2302DS23RG marking 6A SOT 23 sot-23 MOSFET Marking code 6A mosfet vgs 5v SOT23 marking 31A sot-23 PDF

    SPN2302DS23RG

    Abstract: No abstract text available
    Text: SPN2302D N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2302D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state


    Original     		SPN2302D SPN2302D SPN2302DS23RG PDF