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SPN4506 Abstract: Vgs 40V mosfet mosfet gate source voltage 20v Text: SPN4506 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4506 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.	Original	SPN4506 SPN4506 0V/10A Vgs 40V mosfet mosfet gate source voltage 20v	PDF

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SPN4506

Abstract: Vgs 40V mosfet mosfet gate source voltage 20v
Text: SPN4506 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4506 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

Original

SPN4506 SPN4506 0V/10A Vgs 40V mosfet mosfet gate source voltage 20v

PDF