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    SPN8878

    Abstract: 24V 20A mosfet switch
    Text: SPN8878 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8878 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. The SPN8878 has been designed specifically to improve the overall


    Original     		PDF SPN8878 SPN8878 0V/20A 0V/15A 24V 20A mosfet switch

    Untitled

    Abstract: No abstract text available
    Text: SPN8878B N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8878B is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. The SPN8878B has been designed specifically to improve the


    Original     		PDF SPN8878B SPN8878B 0V/20A 0V/15A

    Untitled

    Abstract: No abstract text available
    Text: SPN8878 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8878 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. The SPN8878 has been designed specifically to improve the overall


    Original     		PDF SPN8878 SPN8878 0V/20A 0V/15A