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    SQJ410EP Price and Stock

    Vishay Siliconix SQJ410EP-T1_GE3

    MOSFET N-CH 30V 32A PPAK SO-8
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    DigiKey SQJ410EP-T1_GE3 Digi-Reel 1
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    SQJ410EP-T1_GE3 Cut Tape 1
    • 1 $3.16
    • 10 $2.055
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    • 1000 $1.06823
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    SQJ410EP-T1_GE3 Reel 3,000
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    • 10000 $0.98387
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    Vishay Intertechnologies SQJ410EP-T1_GE3

    Trans MOSFET N-CH 30V 32A 5-Pin(4+Tab) PowerPAK SO T/R - Tape and Reel (Alt: SQJ410EP-T1_GE3)
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    Avnet Americas SQJ410EP-T1_GE3 Reel 20 Weeks 3,000
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    Mouser Electronics SQJ410EP-T1_GE3 26,198
    • 1 $2.35
    • 10 $1.87
    • 100 $1.42
    • 1000 $1.06
    • 10000 $0.966
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    EBV Elektronik SQJ410EP-T1_GE3 21 Weeks 3,000
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    Vishay Intertechnologies SQJ410EP-T1-GE3

    MOSFETs RECOMMENDED ALT SQJ4
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    TTI SQJ410EP-T1-GE3 Reel 6,000 3,000
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    EBV Elektronik SQJ410EP-T1-GE3 26 Weeks 3,000
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    SQJ410EP Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SQJ410EP-T1_GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 32A POWERPAKSO-8 Original PDF

    SQJ410EP Datasheets Context Search

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    SQJ410EP-T1-GE3

    Abstract: No abstract text available
    Text: SQJ410EP www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 30 RDS(on) () at VGS = 10 V 0.0039 RDS(on) () at VGS = 4.5 V 0.0042 ID (A) • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested


    Original     		PDF SQJ410EP AEC-Q101 SQJ410EP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SQJ410EP-T1-GE3

    Untitled

    Abstract: No abstract text available
    Text: SQJ410EP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF SQJ410EP AN609, 5072m 4090m 1436m 9402m 1095m 1706m 3627m 5485m

    Untitled

    Abstract: No abstract text available
    Text: SQJ410EP www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 30 RDS(on) (Ω) at VGS = 10 V 0.0039 RDS(on) (Ω) at VGS = 4.5 V 0.0042 ID (A)


    Original     		PDF SQJ410EP AEC-Q101 2002/95/EC SQJ410EP-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SQJ410EP www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 30 RDS(on) () at VGS = 10 V 0.0039 RDS(on) () at VGS = 4.5 V 0.0042 ID (A) • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested


    Original     		PDF SQJ410EP AEC-Q101 SQJ410EP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SQJ410EP Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 30 RDS(on) (Ω) at VGS = 10 V 0.0039 RDS(on) (Ω) at VGS = 4.5 V 0.0042 ID (A) • TrenchFET Power MOSFET


    Original     		PDF SQJ410EP 2002/95/EC AEC-Q101 SQJ410EP-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: SQJ410EP www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 30 RDS(on) (Ω) at VGS = 10 V 0.0039 RDS(on) (Ω) at VGS = 4.5 V 0.0042 ID (A)


    Original     		PDF SQJ410EP AEC-Q101 2002/95/EC SQJ410EP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SQJ410EP www.vishay.com Vishay Siliconix N-Channel 30 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SQJ410EP 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SQJ410EP Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 30 RDS(on) (Ω) at VGS = 10 V 0.0039 RDS(on) (Ω) at VGS = 4.5 V 0.0042 ID (A) • TrenchFET Power MOSFET


    Original     		PDF SQJ410EP 2002/95/EC AEC-Q101 SQJ410EP-T1-GE3 11-Mar-11

    DPAK/TO-252

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Power Mosfets SMM Medical Devices MOSFETs - Enhanced Quality Control Medical Approved Process Flow and Devices for Implantable Applications Vishay offers a growing range of approved MOSFETs that can be used for the


    Original     		PDF Ups-2726 VMN-PL0469-1311 DPAK/TO-252

    SQJ469ep

    Abstract: SQ4483BE
    Text: Vishay Intertechnology, Inc. AEC-Q101 QUALIFIED SQ RUGGED SERIES MOSFET s ThunderFET ≥ 100 V, Low On-Resistance and Low FOM OPTIMIZED PowerPAK® SO-8L Optimum High and Low Side Combination in a 5 mm x 6 mm Package for Synchronous Buck PowerPAK SO-8L 1/2 the Size of


    Original     		PDF AEC-Q101 AEC-Q101 TS-16949 VMN-MS6925-1406 SQJ469ep SQ4483BE

    sq4435

    Abstract: SQP120N10-09
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs SMM Medical Devices Medical Approved Process Flow and Devices for Implantable Applications Vishay offers a growing range of approved MOSFETs that can be used for the implantable medical market.


    Original     		PDF VMN-PL0469-1505 sq4435 SQP120N10-09

    SQ2315ES

    Abstract: SQ2319ES SQM120P04-04L SQ2360EES SQ3456EV SQJ848EP SQ2301ES sQj980ep sq9945bey sqm10
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . power mosfets Automotive A pplic ations m o sf e t s w w w. v i s h a y. c o m Selector Guide Powe r MOSFETs for Automotive A pplic ations POWER MOSFETs Vishay Siliconix Dedicated Automotive Process Flow Reduces Defects


    Original     		PDF AEC-Q101 O-262, O-263) VMN-SG2151-1009 SQ2315ES SQ2319ES SQM120P04-04L SQ2360EES SQ3456EV SQJ848EP SQ2301ES sQj980ep sq9945bey sqm10

    VMN-SG2151-1406

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs for Automotive Applications MOSFETs – AEC-Q101 Qualified RESOURCES • • • • • • • Automotive MOSFET web page: www.vishay.com/mosfets/automotive-mosfets/ Automotive parametric search: www.vishay.com/automotive-mosfets/param


    Original     		PDF AEC-Q101 VMN-SG2151-1406 VMN-SG2151-1406

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . MOSFETs - AEC-Q101 Qualified AND TEC I INNOVAT O L OGY for Automotive Applications N HN POWER MOSFETs O 19 62-2012 Resources • Automotive MOSFET Web Page: http://www.vishay.com/mosfets/automotive-mosfets/


    Original     		PDF AEC-Q101 VMN-SG2151-1212