SQM110N06
Abstract: SQM110N06-06
Text: SQM110N06-06 Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd
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Original
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PDF
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SQM110N06-06
AEC-Q101
2002/95/EC
O-263
O-263
SQM110N06-06-GE3
18-Jul-08
SQM110N06
SQM110N06-06
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Untitled
Abstract: No abstract text available
Text: SQM110N06-04L www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition PRODUCT SUMMARY VDS (V) 60 RDS(on) () at VGS = 10 V 0.0035 RDS(on) () at VGS = 4.5 V 0.0050
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Original
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PDF
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SQM110N06-04L
AEC-Q101
2002/95/EC
O-263
O-263
SQM110N06-04L-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: SQM110N06-06 www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 60 RDS(on) () at VGS = 10 V 0.006 ID (A) • TrenchFET Power MOSFET • Package with Low Thermal Resistance
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Original
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PDF
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SQM110N06-06
O-263
AEC-Q101
2002/95/EC
SQM110N06-06-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: SQM110N06-04L www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition PRODUCT SUMMARY VDS (V) 60 RDS(on) () at VGS = 10 V 0.0035 RDS(on) () at VGS = 4.5 V 0.0050
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Original
|
PDF
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SQM110N06-04L
AEC-Q101
2002/95/EC
O-263
O-263
SQM110N06-04L-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
|
Untitled
Abstract: No abstract text available
Text: SQM110N06-04L Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free 60 RDS(on) (Ω) at VGS = 10 V • TrenchFET Power MOSFET 0.0035 ID (A) Configuration RoHS • Package with Low Thermal Resistance
|
Original
|
PDF
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SQM110N06-04L
AEC-Q101
O-263
O-263
SQM110N06-04L-GE3
18-Jul-08
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SQM110N06-04L
Abstract: No abstract text available
Text: SPICE Device Model SQM110N06-04L Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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PDF
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SQM110N06-04L
18-Jul-08
SQM110N06-04L
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Untitled
Abstract: No abstract text available
Text: SQM110N06-06 www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 60 RDS(on) () at VGS = 10 V 0.006 ID (A) • TrenchFET Power MOSFET • Package with Low Thermal Resistance
|
Original
|
PDF
|
SQM110N06-06
O-263
AEC-Q101
2002/95/EC
SQM110N06-06-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
SQM110N06
Abstract: No abstract text available
Text: SQM110N06-04L Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 60 RDS(on) () at VGS = 10 V 0.0035 RDS(on) () at VGS = 4.5 V 0.0050 ID (A) • TrenchFET Power MOSFET
|
Original
|
PDF
|
SQM110N06-04L
AEC-Q101
2002/95/EC
O-263
O-263
SQM110N06-04L-GE3
18-Jul-08
SQM110N06
|
Untitled
Abstract: No abstract text available
Text: SQM110N06-04L www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition PRODUCT SUMMARY VDS (V) 60 RDS(on) () at VGS = 10 V 0.0035 RDS(on) () at VGS = 4.5 V 0.0050
|
Original
|
PDF
|
SQM110N06-04L
AEC-Q101
2002/95/EC
O-263
SQM110N06-04L-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
C90-60
Abstract: No abstract text available
Text: SQM110N06-06 Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd
|
Original
|
PDF
|
SQM110N06-06
AEC-Q101
2002/95/EC
O-263
SQM110N06-06-GE3
18-Jul-08
C90-60
|
sqm110n06
Abstract: No abstract text available
Text: SQM110N06-04L Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free 60 RDS(on) (Ω) at VGS = 10 V • TrenchFET Power MOSFET 0.0035 ID (A) Configuration RoHS • Package with Low Thermal Resistance
|
Original
|
PDF
|
SQM110N06-04L
AEC-Q101
O-263
O-263
SQM110N06-04L-GE3
18-Jul-08
sqm110n06
|
Untitled
Abstract: No abstract text available
Text: SQM110N06-06 www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 60 RDS(on) () at VGS = 10 V 0.006 ID (A) • TrenchFET Power MOSFET • Package with Low Thermal Resistance
|
Original
|
PDF
|
SQM110N06-06
AEC-Q101
2002/95/EC
O-263
O-263
SQM110N06-06-GE3
11-Mar-11
|
SQM110N06-04L
Abstract: SQM110N06
Text: SQM110N06-04L Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 60 RDS(on) (Ω) at VGS = 10 V 0.0035 RDS(on) (Ω) at VGS = 4.5 V 0.0050 ID (A) • TrenchFET Power MOSFET
|
Original
|
PDF
|
SQM110N06-04L
2002/95/EC
AEC-Q101
O-263
SQM110N06-04L-GE3
18-Jul-08
SQM110N06-04L
SQM110N06
|
Untitled
Abstract: No abstract text available
Text: SQM110N06-06 www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 60 RDS(on) () at VGS = 10 V 0.006 ID (A) • TrenchFET Power MOSFET • Package with Low Thermal Resistance
|
Original
|
PDF
|
SQM110N06-06
AEC-Q101
2002/95/EC
O-263
O-263
SQM110N06-06-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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