Untitled
Abstract: No abstract text available
Text: SR01632 512K x 32 Low Power Static RAM 1.5V Core VDD Features • ■ ■ ■ Fabricated on S150 Silicon On Insulator SOI CMOS 150 nm Process (Leff = 110 nm) Read Cycle Times Typical ≤20ns Worst case ≤ 25ns Write Cycle Times Typical ≤ 9ns Worst case ≤ 12ns
|
Original
|
PDF
|
HLXSR01632
1x10-12
5x10-12
150nm
N40-1497-000-000
|
HXSR01632
Abstract: 10keV
Text: SR01632 512K x 32 STATIC RAM The monolithic, radiation hardened 16M bit Static proprietary design, layout and process hardening Random Access Memory SRAM in a 512k x 32 techniques. There is no internal EDAC implemented. configuration is a high performance 524,288 word x 32
|
Original
|
PDF
|
HXSR01632
150nm
10keV
|
HLXSR01632
Abstract: No abstract text available
Text: SR01632 512K x 32 STATIC RAM The monolithic 512k x 32 Radiation Hardened Static RAM is a high performance 524,288 word x 32-bit static random access memory, fabricated Honeywell’s 150nm silicon-on-insulator with CMOS S150 technology. It is designed for use in low
|
Original
|
PDF
|
HLXSR01632
32-bit
150nm
ADS-14217
HLXSR01632
|
i1695
Abstract: LQFP48 SA1920 SR01616
Text: INTEGRATED CIRCUITS SA1920 Dual-band RF front-end Product specification Supersedes data of 1998 Apr 07 IC17 Data Handbook Philips Semiconductors 1999 Mar 02 Philips Semiconductors Product specification Dual-band RF front-end SA1920 DESCRIPTION FEATURES • Low current consumption
|
Original
|
PDF
|
SA1920
SA1920
i1695
LQFP48
SR01616
|
Untitled
Abstract: No abstract text available
Text: SR01632 512K x 32 STATIC RAM The monolithic 512k x 32 Radiation Hardened Static RAM is a high performance 524,288 word x 32-bit static random access memory, fabricated Honeywell’s 150nm silicon-on-insulator with CMOS S150 technology. It is designed for use in low
|
Original
|
PDF
|
HXSR01632
32-bit
150nm
ADS-14154
|
74375
Abstract: SR01632 phase shifter dc to 100mhz
Text: INTEGRATED CIRCUITS SA1921 Satellite and cellular dual-band RF front-end Product specification IC17 Data Handbook Philips Semiconductors 1998 Sep 11 Philips Semiconductors Product specification Satellite and cellular dual-band RF front-end DESCRIPTION SA1921
|
Original
|
PDF
|
SA1921
SA1921
74375
SR01632
phase shifter dc to 100mhz
|
satellite received board
Abstract: 1650 1850 MHz Filter C24 06 85 Philips 336 2 x band receiver LQFP48 SA1921 05353 DUT11 1200 AP40
Text: INTEGRATED CIRCUITS SA1921 Satellite and cellular dual-band RF front-end Product specification Supersedes data of 1998 Sep 11 IC17 Data Handbook Philips Semiconductors 1999 Mar 02 Philips Semiconductors Product specification Satellite and cellular dual-band RF front-end
|
Original
|
PDF
|
SA1921
SA1921
satellite received board
1650 1850 MHz Filter
C24 06 85
Philips 336 2
x band receiver
LQFP48
05353
DUT11
1200 AP40
|
