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    SSB TRANSISTORS Search Results

    SSB TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SSB TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TH562

    Abstract: TORIOD SD1731 th562 c ferrite core transformer pin connection IE transformer core 47UF63V
    Text: SD1731 TH562 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . OPTIMIZED FOR SSB 30 MHz 50 VOLTS EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION POUT = 220 W PEP WITH 13 dB GAIN .500 4LFL (M174) epoxy sealed ORDER CODE SD1731 BRANDING TH562 PIN CONNECTION


    Original     		PDF SD1731 TH562) TH562 SD1731 TH562 TORIOD th562 c ferrite core transformer pin connection IE transformer core 47UF63V

    4C6 ferrite

    Abstract: ferrite core 4c6 ferrite core transformer pin connection ST448 4C6 SPECIFICATIONS SD1731 datasheet TORIOD SD1731 SD1731-14 ssb transformer
    Text: SD1731-14 ST448 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . PRELIMINARY DATA OPTIMIZED FOR SSB 30 MHz 50 VOLTS EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION POUT = 250 W PEP WITH 12 dB GAIN .500 4LFL (M174) epoxy sealed ORDER CODE SD1731-14


    Original     		PDF SD1731-14 ST448) ST448 SD1731 4C6 ferrite ferrite core 4c6 ferrite core transformer pin connection ST448 4C6 SPECIFICATIONS SD1731 datasheet TORIOD SD1731-14 ssb transformer

    TH430

    Abstract: M177 JESD97 SD1728 TH430 marking
    Text: SD1728 TH430 RF & Microwave transistors HF SSB application Features • 13.56MHz ■ 44V ■ Gold metallization ■ Common emitter ■ POUT = 200W with 15dB gain Description The SD1728 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB and


    Original     		PDF SD1728 TH430) 56MHz SD1728 TH430 TH430 M177 JESD97 TH430 marking

    TH430

    Abstract: SD1728 M177
    Text: SD1728 TH430 RF & Microwave transistors HF SSB application Features • 13.56MHz ■ 44V ■ Gold metallization ■ Common emitter ■ POUT = 200W with 15dB gain Description The SD1728 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB and


    Original     		PDF SD1728 TH430) 56MHz SD1728 TH430 TH430 SD1728 M177

    arco 427

    Abstract: TRANSISTOR AS PLANAR PEP arco 429 SD1728 M177 arco 4615
    Text: SD1728 TH430 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . OPTIMIZED FOR SSB 30 MHz 50 VOLTS IMD − 30 dB GOLD METALLIZATION COMMON EMITTER POUT = 250 W PEP WITH 14.5 dB GAIN .550 4LFL (M177) epoxy sealed ORDER CODE SD1728 BRANDING TH430 PIN CONNECTION


    Original     		PDF SD1728 TH430) SD1728 TH430 arco 427 TRANSISTOR AS PLANAR PEP arco 429 SD1728 M177 arco 4615

    TH513

    Abstract: HF SSB APPLICATIONS SD1733 M135
    Text: SD1733 TH513 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . OPTIMIZED FOR SSB 30 MHz 50 VOLTS COMMON EMITTER GOLD METALLIZATION P OUT = 75 W MIN. WITH 14.0 dB GAIN .380 4L STUD (M135) epoxy sealed ORDER CODE SD1733 BRANDING TH513 PIN CONNECTION


    Original     		PDF SD1733 TH513) TH513 SD1733 TH513 HF SSB APPLICATIONS M135

    SD1730

    Abstract: Planar choke TH560 choke C20 C24
    Text: SD1730 TH560 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . OPTIMIZED FOR SSB 30 MHz 28 VOLTS IMD −30dB EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION POUT = 220 W PEP WITH 12 dB GAIN .500 4 LFL (M174) epoxy sealed ORDER CODE SD1730 BRANDING


    Original     		PDF SD1730 TH560) -30dB TH560 SD1730 35ise Planar choke TH560 choke C20 C24

    th513

    Abstract: Planar choke M135 SD1733 ssb transistors
    Text: SD1733 TH513 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . OPTIMIZED FOR SSB 30 MHz 50 VOLTS COMMON EMITTER GOLD METALLIZATION POUT = 75 W MIN. WITH 14.0 dB GAIN .380 4L STUD (M135) epoxy sealed ORDER CODE SD1733 BRANDING TH513 PIN CONNECTION DESCRIPTION


    Original     		PDF SD1733 TH513) TH513 SD1733 th513 Planar choke M135 ssb transistors

    Untitled

    Abstract: No abstract text available
    Text: MS1007 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features 30 MHz 50 VOLTS POUT = 150 WATTS GP = 14 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1007 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device


    Original     		PDF MS1007 MS1007 150WPEP 000MHz 001MHz 100mA

    MS1007

    Abstract: No abstract text available
    Text: MS1007 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features 30 MHz 50 VOLTS POUT = 150 WATTS GP = 14 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1007 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device


    Original     		PDF MS1007 MS1007 100mA 150WPEP 000MHz

    arco

    Abstract: THX15 M164 SD1727 Arco 426 arco 427 1nF 63V 5 2.5mm
    Text: SD1727 THX15 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . OPTIMIZED FOR SSB 30 MHz 50 VOLTS IMD −30 dB COMMON EMITTER GOLD METALLIZATION POUT = 150 W PEP MIN. WITH 14 dB GAIN .500 4LFL (M164) epoxy sealed ORDER CODE SD1727 BRANDING THX15 PIN CONNECTION


    Original     		PDF SD1727 THX15) THX15 SD1727 arco THX15 M164 Arco 426 arco 427 1nF 63V 5 2.5mm

    choke coil

    Abstract: SD1729 TH416
    Text: SD1729 TH416 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . OPTIMIZED FOR SSB 30 MHz 28 VOLTS IMD −30 dB COMMON EMITTER GOLD METALLIZATION POUT = 130 W PEP WITH 12 dB GAIN .500 4LFL (M174) epoxy sealed ORDER CODE SD1729 BRANDING TH416 PIN CONNECTION


    Original     		PDF SD1729 TH416) TH416 SD1729 choke coil TH416

    TH562

    Abstract: th562 c 4C6 ferrite SD1731 ferrite core transformer pin connection 4C6 SPECIFICATIONS
    Text: SD1731 TH562 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . OPTIMIZED FOR SSB 30 MHz 50 VOLTS EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION POUT = 220 W PEP WITH 13 dB GAIN .500 4LFL (M174) epoxy sealed ORDER CO DE SD1731 BRANDING TH562 PIN CONNECTION


    Original     		PDF SD1731 TH562) TH562 SD1731 TH562 th562 c 4C6 ferrite ferrite core transformer pin connection 4C6 SPECIFICATIONS

    arco

    Abstract: sd1726 arco 427 THA15
    Text: SD1726 THA15 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . OPTIMIZED FOR SSB 30 MHz 50 VOLTS IMD −30 dB COMMON EMITTER GOLD METALLIZATION P OUT = 150 W PEP MIN. WITH 14 dB GAIN .500 4LFL (M174) epoxy sealed ORDER CODE SD1726 BRANDING THA15


    Original     		PDF SD1726 THA15) THA15 SD1726 arco arco 427 THA15

    Arco 426

    Abstract: No abstract text available
    Text: SD1727 THX15 RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS FEATURES SUMMARY • OPTIMIZED FOR SSB Figure 1. Package ■ 30 MHz ■ 50 VOLTS ■ IMD –30 dB ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 150 W PEP MIN. WITH 14 dB GAIN DESCRIPTION


    Original     		PDF SD1727 THX15) SD1727 Arco 426

    150WpEP

    Abstract: THX15 class AB hf bipolar HF SSB APPLICATIONS TRANSISTOR AS PLANAR PEP M164 SD1727 SD1727/THX15
    Text: SD1727 THX15 RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS FEATURES SUMMARY • OPTIMIZED FOR SSB Figure 1. Package ■ 30 MHz ■ 50 VOLTS ■ IMD –30 dB ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 150 W PEP MIN. WITH 14 dB GAIN DESCRIPTION


    Original     		PDF SD1727 THX15) SD1727 150WpEP THX15 class AB hf bipolar HF SSB APPLICATIONS TRANSISTOR AS PLANAR PEP M164 SD1727/THX15

    MS1226

    Abstract: No abstract text available
    Text: MS1226 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features 30 MHz 28 VOLTS IMD = -28 dB POUT = 30 WATTS GP = 18 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1226 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device


    Original     		PDF MS1226 MS1226

    Untitled

    Abstract: No abstract text available
    Text: MS1226 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features 30 MHz 28 VOLTS IMD = -28 dB POUT = 30 WATTS GP = 18 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1226 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device


    Original     		PDF MS1226 MS1226 RTH00

    SD1729

    Abstract: TH416 88nF
    Text: SD1729 TH416 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . OPTIMIZED FOR SSB 30 MHz 28 VOLTS IMD −30 dB COMMON EMITTER GOLD METALLIZATION P OUT = 130 W PEP WITH 12 dB GAIN .500 4LFL (M174) epoxy sealed ORDER CODE SD1729 BRANDING TH416 PIN CONNECTION


    Original     		PDF SD1729 TH416) TH416 SD1729 TH416 88nF

    arco

    Abstract: arco 427 M164 SD1727 THX15 Arco 426 arco 4215
    Text: SD1727 THX15 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . OPTIMIZED FOR SSB 30 MHz 50 VOLTS IMD −30 dB COMMON EMITTER GOLD METALLIZATION P OUT = 150 W PEP MIN. WITH 14 dB GAIN .500 4LFL (M164) epoxy sealed ORDER CODE SD1727 BRANDING THX15


    Original     		PDF SD1727 THX15) THX15 SD1727 arco arco 427 M164 THX15 Arco 426 arco 4215

    7056

    Abstract: MS1227 MS1227 HF SSB APPLICATIONS
    Text: MS1227 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features 30 MHz 12.5 VOLTS GOLD METALIZATION POUT = 20 W MINIMUM GP = 15 dB COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1227 is a 12.5V epitaxial NPN planar transistor designed primarily for SSB communications. This device utilizes emitter


    Original     		PDF MS1227 MS1227 30MHz 7056 MS1227 HF SSB APPLICATIONS

    SD1730

    Abstract: TH560 arco
    Text: SD1730 TH560 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . OPTIMIZED FOR SSB 30 MHz 28 VOLTS IMD −30dB EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION P OUT = 220 W PEP WITH 12 dB GAIN .500 4 LFL (M174) epoxy sealed ORDER CODE SD1730 BRANDING


    Original     		PDF SD1730 TH560) -30dB TH560 SD1730 TH560 arco

    Untitled

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1078 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • • • • • • • • Optimized for SSB 30 MHz 28 Volts IMD –30dB Common Emitter Gold Metallization


    Original     		PDF MS1078 MS1078

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON 5 i. SD1731-14 ST448 •ILO RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS PRELIMINARY DATA OPTIMIZED FOR SSB 30 MHz 50 VOLTS EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION P o u t = 250 W PEP WITH 12 dB GAIN .500 4LFL (M 174) epoxy sealed


    OCR Scan     		PDF SD1731-14 ST448) SD1731 ST448 0D77b3b