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    SSH10 Price and Stock

    Microchip Technology Inc AT21CS11-SSH10-T

    IC EEPROM 1KBIT I2C 125KHZ 8SOIC
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    DigiKey AT21CS11-SSH10-T Digi-Reel 7,948 1
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    AT21CS11-SSH10-T Cut Tape 7,948 1
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    AT21CS11-SSH10-T Reel 4,000 4,000
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    Mouser Electronics AT21CS11-SSH10-T 7,985
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    Microchip Technology Inc AT21CS11-SSH10-T 9,268
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    Onlinecomponents.com AT21CS11-SSH10-T
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    NAC AT21CS11-SSH10-T 8,000 1
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    Avnet Silica AT21CS11-SSH10-T 14 Weeks 4,000
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    Microchip Technology Inc AT21CS11-SSH10-B

    IC EEPROM 1KBIT I2C 125KHZ 8SOIC
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    DigiKey AT21CS11-SSH10-B Tube 5,488 1
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    Mouser Electronics AT21CS11-SSH10-B 1,298
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    Microchip Technology Inc AT21CS11-SSH10-B 11,900
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    Onlinecomponents.com AT21CS11-SSH10-B
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    NAC AT21CS11-SSH10-B Tube 9,500 1
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    Avnet Silica AT21CS11-SSH10-B 6 Weeks 100
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    Samtec Inc TSSH-105-01-L-D

    CONN HEADER VERT 10POS 2.54MM
    Free Sample
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    DigiKey TSSH-105-01-L-D Tube 991 1
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    Mouser Electronics TSSH-105-01-L-D 230
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    Avnet Abacus TSSH-105-01-L-D 4 Weeks 1
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    TE Connectivity OJS-SH-105HEF,-00000

    RELAY GEN PURPOSE SPST 16A 5V
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    DigiKey OJS-SH-105HEF,-00000 Tray 908 1
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    Essentra Components WS-SH-1-01

    CBL CLIP WIRE SADDLE ARROWHEAD
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    DigiKey WS-SH-1-01 Bag 312 1
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    Mouser Electronics WS-SH-1-01 1,744
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    SSH10 Datasheets (37)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SSH10 Tyco Electronics DIP Switches, Switches, SWITCH DIP SIP RT ANG 10POS Original PDF
    SSH100-05 Allegro MicroSystems AC to DC Power Supply, Open Frame, 5V Output Original PDF
    SSH100-05-T Allegro MicroSystems AC/DC POWER SUPPLY SNGL OUT 5V 20A 100W Original PDF
    SSH100-12 Allegro MicroSystems AC to DC Power Supply, Open Frame, 12V Output Original PDF
    SSH100-12-T Allegro MicroSystems AC/DC POWER SUPPLY SNGL OUT 12V 8.5A 100W Original PDF
    SSH100-24 Allegro MicroSystems AC to DC Power Supply, Open Frame, 24V Output Original PDF
    SSH100-24-T Allegro MicroSystems AC/DC POWER SUPPLY SNGL OUT 24V 4.5A 100W Original PDF
    SSH10 (2-1437589-1) Tyco Electronics DIP, Rotary DIP, SIP Switches and DIP Shunts - Standard; SSH10=10 POS SIP SWITCH ( Alcoswitch ) Original PDF
    SSH10N05 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    SSH10N05 Unknown FET Data Book Scan PDF
    SSH10N05 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    SSH10N06 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    SSH10N06 Unknown FET Data Book Scan PDF
    SSH10N06 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    SSH10N08 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    SSH10N08 Unknown FET Data Book Scan PDF
    SSH10N08 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    SSH10N10 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    SSH10N10 Unknown FET Data Book Scan PDF
    SSH10N10 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    SSH10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SSH10N60B

    Abstract: No abstract text available
    Text: SSH10N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching


    Original     		PDF SSH10N60B SSH10N60B

    SSH10N90A

    Abstract: MOSFET 10A
    Text: N-CHANNEL POWER MOSFET SSH10N90A FEATURES BVDSS = 900V • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Lower Leakage Current: 25µA Max. @ VDS = 900V


    Original     		PDF SSH10N90A SSH10N90A MOSFET 10A

    mosfet 10a 800v

    Abstract: MOSFET 800V 10A SSH10N80A mosfet 10a 800v fs
    Text: N-CHANNEL POWER MOSFET SSH10N80A FEATURES BVDSS = 800V • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Lower Leakage Current: 25µA Max. @ VDS = 800V


    Original     		PDF SSH10N80A mosfet 10a 800v MOSFET 800V 10A SSH10N80A mosfet 10a 800v fs

    SSH10N60A

    Abstract: No abstract text available
    Text: SSH10N60A Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS on = 0.8 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 10 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V


    Original     		PDF SSH10N60A SSH10N60A

    SSH107

    Abstract: SSH104
    Text: SSH101 THRU SSH107 1.0 AMP SURFACE MOUNT HIGH EFFICIENCY RECTIFIERS VOLTAGE RANGE 50 to 800 Volts CURRENT 1.0 Ampere FEATURES * Ideal for surface mount applications * Easy pick and place * Built-in strain relief * Fast switching speed SS .106 2.7 .098(2.5)


    Original     		PDF SSH101 SSH107 300us SSH107 SSH104

    SSH10N60B

    Abstract: No abstract text available
    Text: SSH10N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching


    Original     		PDF SSH10N60B SSH10N60B

    SSH10N90A

    Abstract: gs 05
    Text: SSH10N90A Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS on = 1.2 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 10 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current : 25 µA (Max.) @ VDS = 900V


    Original     		PDF SSH10N90A 200nF 300nF SSH10N90A gs 05

    SSH10N80A

    Abstract: SSF10N80A
    Text: SSH10N80A Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS on = 0.95 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 10 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current : 25 µA (Max.) @ VDS = 700V


    Original     		PDF SSH10N80A SSH10N80A SSF10N80A

    OIML C3

    Abstract: OIMLR60
    Text: SSH 单点式传感器 1. 产品特点： o 不锈钢材质 o 激光焊接密封，适用于恶劣环境 o 紧凑结构 o 适用于不锈钢防水秤以及化工， 食品和制药行业的过程称重控制 2. SSH 单点式传感器 技术指标： SSH 型号


    Original     		PDF SSH50500kg) SSH1000kg) OIML C3 OIMLR60

    SSV06

    Abstract: SSV10 SSH06 SSH06 1-1437589-9
    Text: S Series Sip Switches, Low Profile, Vertical and Right Angle S Series A FEATURES: MATERIAL SPECIFICATIONS: • End-to-end stackable in .100" center SSV/SLV versions Base .PPS 94V-0/Encapsulated Ceramic (SLV/SLH) Cover .PBT 94V-0


    Original     		PDF SSH02 SSH04 SSH06 SSH08 SSH10 SSV06 SSV10 SSH06 SSH06 1-1437589-9

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    SSH6N80

    Abstract: SSH3N90 ssh12n80 ssh7n90 SSH11N90 ssh-6n80 SSH8N80 SSH12N70
    Text: FUNCTION GUIDE MOSFETs TO-3P N-CHANNEL Continued Part Number BV dss(V) lD(on)(A) RDS(on){Q) R0jc(K/W) Po(Watt) Page SSH4N70 SSH5N70 SSH6N70 SSH8N70 SSH10N70 SSH12N70 700 4.00 5.00 6.00 8.00 10.00 12.00 3.500 2,500 1.900 1.400 1.200 0.900 0.93 0.83 0.73 0.65


    OCR Scan     		PDF SSH4N70 SSH5N70 SSH6N70 SSH8N70 SSH10N70 SSH12N70 SSH4N80 SSH5N80 SSH6N80 SSH8N80 SSH3N90 ssh12n80 ssh7n90 SSH11N90 ssh-6n80

    DIODE S3c

    Abstract: ssm10n70
    Text: SAMSUNG SEM ICO NDUCTOR INC *- SSM10N70 SSH10N70 >.U DE I T T t m M S □□OSB'it. □ W ~ N-CHANNEL * - • r * POWER MOSFETS V - ^ - IS t' Preliminary Specifications PRODUCT SUMMARY 700 Volt, i.a O h m SFET Part Number Vos Rosion Id SSM10N70 700V 1.00


    OCR Scan     		PDF SSM10N70 SSH10N70 SSH10N70 DIODE S3c

    SSH10N60A

    Abstract: No abstract text available
    Text: SSH10N60A Advanced Power MOSFET FEATURES B V d ss = 6 0 0 V • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 t-i A M ax. @ VDS = 600V


    OCR Scan     		PDF SSH10N60A SSH10N60A

    ssh10n70

    Abstract: 10N70
    Text: N-CHANNEL POWER MOSFETS SSH10N70 FEATURES • • • • • • • T O -3 P Lower Ros ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		PDF SSH10N70 10N70 ssh10n70 10N70

    irfs250a

    Abstract: No abstract text available
    Text: Device List TO-3P IRFP140A IRFP150A SSH70N10A IRFP240A IRFP250A SSH45N20A IRFP244A IRFP254A IRFP340A IRFP350A SSH25N40A IRFP440A IRFP450A SSH22N50A SSH7N60A SSH10N60A SSH17N60A TO-3PF IRFS140A IRFS150A SSF70N10A IRFS240A IRFS250A SSF45N20A IRFS244A IRFS254A


    OCR Scan     		PDF IRFP140A IRFP150A SSH70N10A IRFP240A IRFP250A SSH45N20A IRFP244A IRFP254A IRFP340A IRFP350A irfs250a

    mosfet yb

    Abstract: SSH10N60A
    Text: Advanced SSH10N60A P o w e r MOSFET FEATURES BV dss = • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ^D S o n = ■ Lo w e r Input C a pa citance lD = ■ Im proved G ate C harge ■ E xtended S afe O pe ra ting A rea


    OCR Scan     		PDF SSH10N60A mosfet yb SSH10N60A

    OA 161 diode

    Abstract: SSH10N90A
    Text: Advanced SSH10N90A Power MOSFET FEATURES B V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge dss = ^ D S o n = lD = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 900V


    OCR Scan     		PDF SSH10N90A OA 161 diode SSH10N90A

    SSH10

    Abstract: No abstract text available
    Text: SSH10N90A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ BVdss = 900 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 p A Max. @ VOS= 900V


    OCR Scan     		PDF SSH10N90A SSH10N9 SSH10

    SSH10N80

    Abstract: 250M SSH10N70
    Text: N-CHANNEL POWER MOSFETS SSH10N80/70 FEATURES • Lower Rds<on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • improved high temperature reliability


    OCR Scan     		PDF SSH10N80/70 SSH10N80 SSH10N70 250M

    Untitled

    Abstract: No abstract text available
    Text: SSH10N60A Advanced Power MOSFET FEATURES BV dss = 600 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance lD = 10 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA (Max.) @ V DS = 600V


    OCR Scan     		PDF SSH10N60A Dio64 O-220-F-4L GQ3b33E 0G3b333

    SSH10N55

    Abstract: SSH10N60
    Text: N-CHANNEL POWER MOSFETS SSH10N60/55 FEATURES • • • • • • • Lower R d sio n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		PDF SSH10N60/55 SSH10N60 SSH10N55 gs-20

    8275-2

    Abstract: 2355D SSH10N60A
    Text: SSH10N60A Advanced Power MOSFET FEATURES BV dss = 600 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance lD = 10 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA (Max.) @ V DS = 600V


    OCR Scan     		PDF SSH10N60A 71bMm2 O-220-F-4L DD3b33E 003b333 8275-2 2355D SSH10N60A

    SSH10N70

    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFETS SSH10N70 FEATURES • Low er Rds <on • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		PDF SSH10N70 SSM10N70 SSH10N70