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    SSM3K03FE Search Results

    SSM3K03FE Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SSM3K03FE Toshiba Metal oxide N-channel FET, Enhancement Type with diode Original PDF
    SSM3K03FE Toshiba N-Channel MOSFET Original PDF
    SSM3K03FE Toshiba FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE Scan PDF
    SSM3K03FE Toshiba Scan PDF

    SSM3K03FE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SSM3K03FE

    Abstract: No abstract text available
    Text: SSM3K03FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03FE High Speed Switching Applications Analog Switch Applications • 2.5 V gate drive • High input impedance • Low gate threshold voltage: Vth = 0.7~1.3 V • Small package Unit: mm


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    SSM3K03FE 2003-03-27transportation SSM3K03FE PDF

    2SA1955

    Abstract: HN7G01FE SSM3K03FE
    Text: HN7G01FE TOSHIBA Multichip Discrete Device HN7G01FE Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications • Q1 transistor : 2SA1955 equivalent • Q2 (MOSFET): SSM3K03FE equivalent Unit: mm Q1 (Transistor) Absolute Maximum Ratings (Ta = 25°C)


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    HN7G01FE 2SA1955 SSM3K03FE HN7G01FE PDF

    HN7G02FE

    Abstract: RN2110 SSM3K03FE
    Text: HN7G02FE TOSHIBA Multichip Discrete Device HN7G02FE Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Unit: mm Q1 transistor : RN2110 equivalent Q2 (MOSFET): SSM3K03FE equivalent


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    HN7G02FE RN2110 SSM3K03FE HN7G02FE PDF

    2SA1955

    Abstract: HN7G01FE SSM3K03FE
    Text: HN7G01FE TOSHIBA Multichip Discrete Device HN7G01FE Power Management Switch Applications Driver Circuit Applications Unit: mm Interface Circuit Applications • Q1 transistor : 2SA1955 equivalent • Q2 (MOSFET): SSM3K03FE equivalent Q1 (Transistor) Maximum Ratings (Ta = 25°C)


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    HN7G01FE 2SA1955 SSM3K03FE HN7G01FE PDF

    SSM3K03FE

    Abstract: No abstract text available
    Text: SSM3K03FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03FE High Speed Switching Applications Analog Switch Applications • 2.5 V gate drive · High input impedance · Low gate threshold voltage: Vth = 0.7~1.3 V · Small package Unit: mm


    Original
    SSM3K03FE 2003-03-27transportation SSM3K03FE PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM3K03FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03FE High Speed Switching Applications Analog Switch Applications • 2.5 V gate drive • High input impedance • Low gate threshold voltage: Vth = 0.7~1.3 V • Small package Unit: mm


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    SSM3K03FE PDF

    Untitled

    Abstract: No abstract text available
    Text: HN7G10FE TOSHIBA Multichip Discrete Device HN7G10FE Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications • Q1 transistor : 2SC5376F equivalent • Q2 (MOSFET): SSM3K03FE equivalent Unit: mm Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C)


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    HN7G10FE 2SC5376F SSM3K03FE PDF

    2SC5376F

    Abstract: HN7G10FE SSM3K03FE 2sC537
    Text: HN7G10FE TOSHIBA Multichip Discrete Device HN7G10FE Power Management Switch Applications Driver Circuit Applications Unit: mm Interface Circuit Applications • Q1 transistor : 2SC5376F equivalent • Q2 (MOSFET): SSM3K03FE equivalent Q1 (transistor) Maximum Ratings (Ta = 25°C)


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    HN7G10FE 2SC5376F SSM3K03FE HN7G10FE 2sC537 PDF

    Untitled

    Abstract: No abstract text available
    Text: HN7G02FE TOSHIBA Multichip Discrete Device HN7G02FE Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Unit: mm Q1 transistor : RN2110 equivalent Q2 (MOSFET): SSM3K03FE equivalent


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    HN7G02FE RN2110 SSM3K03FE PDF

    Untitled

    Abstract: No abstract text available
    Text: HN7G10FE TOSHIBA Multichip Discrete Device HN7G10FE Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications • Q1 transistor : 2SC5376F equivalent • Q2 (MOSFET): SSM3K03FE equivalent Unit: mm Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C)


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    HN7G10FE 2SC5376F SSM3K03FE PDF

    SSM3K03FE

    Abstract: No abstract text available
    Text: SSM3K03FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03FE High Speed Switching Applications Analog Switch Applications • 2.5 V gate drive • High input impedance • Low gate threshold voltage: Vth = 0.7~1.3 V • Small package Unit: mm


    Original
    SSM3K03FE SSM3K03FE PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM3K03FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03FE High Speed Switching Applications Analog Switch Applications • 2.5 V gate drive • High input impedance • Low gate threshold voltage: Vth = 0.7~1.3 V • Small package Unit: mm


    Original
    SSM3K03FE PDF

    Untitled

    Abstract: No abstract text available
    Text: HN7G01FE TOSHIBA Multichip Discrete Device HN7G01FE Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications • Q1 transistor : 2SA1955 equivalent • Q2 (MOSFET): SSM3K03FE equivalent Unit: mm Q1 (Transistor) Absolute Maximum Ratings (Ta = 25°C)


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    HN7G01FE 2SA1955 SSM3K03FE PDF

    fet to92

    Abstract: Pch MOS FET SSM3J13T SSM3J16FU ssm3k14t transistor ESM 2SK1830 2SK2035 2SK2825 SSM3J15TE
    Text: Part Number SSM3K03TE SSM3K16TE SSM3K15TE SSM3J16TE SSM3J15TE SSM3K03FE SSM3K04FE 2SK1830 Nch 2SK2825 Nch 2SK2035 Nch SSM3K04FS SSM3K16FS SSM3K15FS 2SJ347 Pch SSM3J16FS SSM3J15FS 2SK1829 Nch 2SK2824 Nch 2SK2034 Nch 2SK2037 Nch SSM3K04FU SSM3K16FU SSM3K05FU


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    SSM3K03TE SSM3K16TE SSM3K15TE SSM3J16TE SSM3J15TE SSM3K03FE SSM3K04FE 2SK1830 2SK2825 2SK2035 fet to92 Pch MOS FET SSM3J13T SSM3J16FU ssm3k14t transistor ESM SSM3J15TE PDF

    SSM3K03FE

    Abstract: No abstract text available
    Text: SSM3K03FE 東芝電界効果トランジスタ シリコンNチャネルMOS形 SSM3K03FE ○ 高速スイッチング用 ○ アナログスイッチ用 単位: mm • 入力インピーダンスが高く駆動電流が極めて小さい。 • Vth が低く、低電圧での CMOS などからの直接駆動が可能。


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    SSM3K03FE SSM3K03FE PDF

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


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    PDF

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


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    BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983 PDF

    SSM3K7002

    Abstract: ESM 310 SSM3J16FU SSM3K03TE zener diode reference guide SSM5N03FE US6 KEC SSM5G01TU 6798 SSM3J13T
    Text: S-MOS Series Small-Signal MOSFETs for Switching PRODUCT GUIDE S -MOS Family S-MOS Family Toshiba presents a range of small-signal MOSFET S-MOS devices which have been developed for various switching, interface and DC/DC converter applications. These MOSFETs have been classified into families according to application,


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    3402C-0209 SSM3K7002 ESM 310 SSM3J16FU SSM3K03TE zener diode reference guide SSM5N03FE US6 KEC SSM5G01TU 6798 SSM3J13T PDF

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 PDF

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


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    SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126 PDF

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


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    SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 PDF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


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    element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor PDF

    SSM3K03FE

    Abstract: No abstract text available
    Text: TOSHIBA SSM3K03FE TO SHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M OS TYPE SSM3K03FE Unit in mm HIGH SPEED SWITCH APPLICATIONS AN ALO G SWITCH APPLICATIONS • • • • 1.6 ± 0.1 2.5 V Gate Drive High Input Impedance Low Gate Threshold Voltage Small Package


    OCR Scan
    SSM3K03FE SSM3K03FE PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA SSM3K03FE TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM3K03FE HIGH SPEED SWITCH APPLICATIONS Unit in mm ANALOG SWITCH APPLICATIONS 1.6 ± 0.1 0.85 ±0.1 • 2.5 V Gate Drive • High Input Impedance • Low Gate Threshold Voltage •


    OCR Scan
    SSM3K03FE PDF