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Toshiba America Electronic Components SSM5H90ATU,LF MOSFET N-CH 20V 2.4A UFV
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SSM5H90ATU,LF	Digi-Reel	635		1	1 $0.49 10 $0.299 100 $0.49 1000 $0.12717 10000 $0.12717	Buy Now
	SSM5H90ATU,LF	Cut Tape	635		1	1 $0.49 10 $0.299 100 $0.49 1000 $0.12717 10000 $0.12717	Buy Now
	SSM5H90ATU,LF	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.10769	Buy Now
Mouser Electronics	SSM5H90ATU,LF		3,000			1 $0.48 10 $0.294 100 $0.186 1000 $0.132 10000 $0.077	Buy Now
Toshiba America Electronic Components SSM5H90ATU Transistor MOSFET N-Channel 20V 2.4A 5-Pin UFV - Tape and Reel (Alt: SSM5H90ATU,LF)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SSM5H90ATU	Reel		16 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.09089	Buy Now

SSM5H90 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SSM5H90ATU,LF		Toshiba America Electronic Components	MOSFET N-CH 20V 2.4A UFV		Original	PDF

SSM5H90 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
SSM5H90 Abstract: SSM5H90TU Text: SSM5H90TU Silicon N Channel MOS Type / Silicon Epitaxial Planer Diode SSM5H90TU High-Speed Switching Applications Unit: mm • Integrates an N-ch MOSFET and planer diodes into one package. • Low RDS ON and low VF Absolute Maximum Ratings (Ta = 25°C) for the MOSFET	Original	SSM5H90TU SSM5H90 SSM5H90TU	PDF
Untitled Abstract: No abstract text available Text: SSM5H90TU Silicon N Channel MOS Type / Silicon Epitaxial Planer Diode SSM5H90TU High-Speed Switching Applications Unit: mm • Integrates an N-ch MOSFET and planer diodes into one package. • Low RDS ON and low VF Absolute Maximum Ratings (Ta = 25°C) for the MOSFET	Original	SSM5H90TU	PDF
65mmax Abstract: No abstract text available Text: SSM5H90ATU Composite Devices Silicon N-Channel MOS/Diode Epitaxial Planar SSM5H90ATU 1. Applications • High-Speed Switching 2. Features 1 Combined an N-channel MOSFET and a diode in one package. 2.1. MOSFET Features (1) Low drain-source on-resistance : RDS(ON) = 65 mΩ (max) (@VGS = 4.0 V)	Original	SSM5H90ATU 65mmax	PDF
Untitled Abstract: No abstract text available Text: SSM5H90TU Silicon N Channel MOS Type / Silicon Epitaxial Planer Diode SSM5H90TU High-Speed Switching Applications Unit: mm • Integrates an N-ch MOSFET and planer diodes into one package. • Low RDS ON and low VF Absolute Maximum Ratings (Ta = 25°C) for the MOSFET	Original	SSM5H90TU	PDF
SSM5H90TU Abstract: SSM5H90 Text: SSM5H90TU シリコンNチャネルMOS形 + ダイオードエピタキシャルプレーナ形東芝複合素子 SSM5H90TU ○ 高速スイッチング用 • 単位: mm Nch MOSFET とダイオードを 1 パッケージに内蔵 • MOSFET は 1.5 V 駆動です	Original	SSM5H90TU SSM5H90TU SSM5H90	PDF
Untitled Abstract: No abstract text available Text: SSM5H90ATU Composite Devices Silicon N-Channel MOS/Diode Epitaxial Planar SSM5H90ATU 1. Applications • High-Speed Switching 2. Features 1 Combined an N-channel MOSFET and a diode in one package. 2.1. MOSFET Features (1) Low drain-source on-resistance : RDS(ON) = 65 mΩ (max) (@VGS = 4.0 V)	Original	SSM5H90ATU	PDF
SSM3J307T Abstract: SSM3J328R SSM3J334R Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g	Original	200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R	PDF
GT30F131 Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01	PDF
IGBT GT30F124 Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 Text: 東芝半導体製品総覧表 2011 年 1 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075	PDF
GT30F124 Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123	PDF
GT45F122 Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124 Text: 東芝半導体製品総覧表 2009 年 7 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 GT45F122 TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124	PDF
GT30J124 Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	SCE0004I SC-43) 2SC1815 GT30J124 smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram	PDF
45F122 Abstract: GT30f124 30g122 30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA8023 GT50N322 Text: 東芝半導体製品総覧表 2010 年 1 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 45F122 GT30f124 30g122 30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA8023 GT50N322	PDF