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    SSM6J08FU Search Results

    SSM6J08FU Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SSM6J08FU Toshiba Metal oxide P-channel FET, Enhancement Type w. diode Original PDF
    SSM6J08FU Toshiba Original PDF
    SSM6J08FUTE85LF Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 1.3A US6 Original PDF

    SSM6J08FU Datasheets Context Search

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    SSM6J08FU

    Abstract: No abstract text available
    Text: SSM6J08FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSII SSM6J08FU Power Management Switch DC-DC Converter Unit: mm • Small Package · Low on Resistance : Ron = 0.18 Ω (max) (@VGS = −4 V) · Low Gate Threshold Voltage : Ron = 0.26 Ω (max) (@VGS = −2.5 V)


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    PDF SSM6J08FU SSM6J08FU

    SSM6J08FU

    Abstract: No abstract text available
    Text: SSM6J08FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSII SSM6J08FU Power Management Switch DC-DC Converter Unit: mm • Small Package • Low on Resistance : Ron = 0.18 Ω (max) (@VGS = −4 V) : Ron = 0.26 Ω (max) (@VGS = −2.5 V)


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    PDF SSM6J08FU SSM6J08FU

    Untitled

    Abstract: No abstract text available
    Text: SSM6J08FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSII SSM6J08FU Power Management Switch DC-DC Converter Unit: mm • Small Package • Low on Resistance : Ron = 0.18 Ω (max) (@VGS = −4 V) : Ron = 0.26 Ω (max) (@VGS = −2.5 V)


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    PDF SSM6J08FU

    Untitled

    Abstract: No abstract text available
    Text: SSM6J08FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSII SSM6J08FU Power Management Switch DC-DC Converter Unit: mm • Small Package • Low on Resistance : Ron = 0.18 Ω (max) (@VGS = −4 V) • Low Gate Threshold Voltage : Ron = 0.26 Ω (max) (@VGS = −2.5 V)


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    PDF SSM6J08FU

    SSM6J08FU

    Abstract: No abstract text available
    Text: SSM6J08FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSII Preliminary SSM6J08FU Power Management Switch DC-DC Converter • Small Package • Low on Resistance : Ron = 0.18 Ω (max) (@VGS = −4 V) : Ron = 0.26 Ω (max) (@VGS = −2.5 V)


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    PDF SSM6J08FU SSM6J08FU

    Untitled

    Abstract: No abstract text available
    Text: SSM6J08FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSII SSM6J08FU Power Management Switch DC-DC Converter Unit: mm • Small Package • Low on Resistance : Ron = 0.18 Ω (max) (@VGS = −4 V) : Ron = 0.26 Ω (max) (@VGS = −2.5 V)


    Original
    PDF SSM6J08FU

    Untitled

    Abstract: No abstract text available
    Text: SSM6J08FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSII SSM6J08FU Power Management Switch DC-DC Converter • Small Package • Low on Resistance : Ron = 0.18 : Ron = 0.26 • Unit: mm (max) (@VGS = −4 V) (max) (@VGS = −2.5 V) Low Gate Threshold Voltage


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    PDF SSM6J08FU

    Untitled

    Abstract: No abstract text available
    Text: SSM6J08FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSII Preliminary SSM6J08FU Power Management Switch DC-DC Converter Unit: mm • Small Package • Low on Resistance : Ron = 0.18 Ω (max) (@VGS = −4 V) • Low Gate Threshold Voltage


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    PDF SSM6J08FU

    Untitled

    Abstract: No abstract text available
    Text: SSM6J08FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSII Preliminary SSM6J08FU Power Management Switch DC-DC Converter Unit: mm • Small Package · Low on Resistance : Ron = 0.18 Ω (max) (@VGS = −4 V) · Low Gate Threshold Voltage


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    PDF SSM6J08FU

    SSM6J08FU

    Abstract: No abstract text available
    Text: SSM6J08FU 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOSII SSM6J08FU ○ パワーマネジメントスイッチ ○ DC-DC コンバータ 単位: mm • 小型パッケージで高密度実装に最適 • オン抵抗が低い。 : Ron = 0.18 Ω (最大) (@VGS = −4 V)


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    PDF SSM6J08FU SSM6J08FU

    Untitled

    Abstract: No abstract text available
    Text: SSM6J08FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSII SSM6J08FU Power Management Switch DC-DC Converter Unit: mm • Small Package • Low on Resistance : Ron = 0.18 Ω (max) (@VGS = −4 V) : Ron = 0.26 Ω (max) (@VGS = −2.5 V)


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    PDF SSM6J08FU

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


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    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


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    PDF BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983

    SSM3K7002

    Abstract: ESM 310 SSM3J16FU SSM3K03TE zener diode reference guide SSM5N03FE US6 KEC SSM5G01TU 6798 SSM3J13T
    Text: S-MOS Series Small-Signal MOSFETs for Switching PRODUCT GUIDE S -MOS Family S-MOS Family Toshiba presents a range of small-signal MOSFET S-MOS devices which have been developed for various switching, interface and DC/DC converter applications. These MOSFETs have been classified into families according to application,


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    PDF 3402C-0209 SSM3K7002 ESM 310 SSM3J16FU SSM3K03TE zener diode reference guide SSM5N03FE US6 KEC SSM5G01TU 6798 SSM3J13T

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


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    PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    2SK4207

    Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


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    PDF BCJ0082B BCJ0082A 2SK4207 to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03

    TPCA*8064

    Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
    Text: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


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    PDF BCE0082B TPCA*8064 TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028

    8aa1

    Abstract: esm 310 2SK982 733 SSOP10 kef q1 datasheet SSM3J13T SSM3K03TE 2SJ148 2SJ167 2SJ168
    Text: 小型面実装MOS FET S-MOSシリーズ ● 当社は品質、信頼性の向上に努めておりますが、一般に半導体製品は誤作動した り故障することがあります。当社半導体製品をご使用いただく場合は、半導体製


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    PDF 050106DAA1 12341D3AG BDJ0099A 8aa1 esm 310 2SK982 733 SSOP10 kef q1 datasheet SSM3J13T SSM3K03TE 2SJ148 2SJ167 2SJ168

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


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    PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    TK12A10K3

    Abstract: tk12a10k TK33A60V TPCA*8065 TK40E10K3 SSM6K407TU TPCA*8064 tk6a65d equivalent TPCA*8036 TK100G10N1
    Text: Semiconductor Catalog 2012-3 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 4


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    PDF

    tpc8118 equivalent replacement

    Abstract: SSM3J307T Zener diode smd 071 A01
    Text: 2009-9 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


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    PDF BCE0082A tpc8118 equivalent replacement SSM3J307T Zener diode smd 071 A01

    TK12A10K3

    Abstract: tk25e06k3 TK50E06K3A tk20e60u TPCA*8065 TJ11A10M3 SSM6J501NU TPCA8077 TJ9A10M3 TK8A10K3
    Text: 製品カタログ 2010-9 東芝半導体 製品カタログ MOSFET S SE EM M II C CO ON ND DU UC C TT O OR R h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


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    PDF BCJ0082D BCJ0082C TK12A10K3 tk25e06k3 TK50E06K3A tk20e60u TPCA*8065 TJ11A10M3 SSM6J501NU TPCA8077 TJ9A10M3 TK8A10K3

    TPCA*8030

    Abstract: lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ 汎用小信号面実装対応素子 (トランジスタダイオード、セルパック) SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S


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    PDF TC7SZ126FU SC-88A OT-353 BCJ0052E BCJ0052D TPCA*8030 lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558