SSM6J08FU
Abstract: No abstract text available
Text: SSM6J08FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSII SSM6J08FU Power Management Switch DC-DC Converter Unit: mm • Small Package · Low on Resistance : Ron = 0.18 Ω (max) (@VGS = −4 V) · Low Gate Threshold Voltage : Ron = 0.26 Ω (max) (@VGS = −2.5 V)
|
Original
|
PDF
|
SSM6J08FU
SSM6J08FU
|
SSM6J08FU
Abstract: No abstract text available
Text: SSM6J08FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSII SSM6J08FU Power Management Switch DC-DC Converter Unit: mm • Small Package • Low on Resistance : Ron = 0.18 Ω (max) (@VGS = −4 V) : Ron = 0.26 Ω (max) (@VGS = −2.5 V)
|
Original
|
PDF
|
SSM6J08FU
SSM6J08FU
|
Untitled
Abstract: No abstract text available
Text: SSM6J08FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSII SSM6J08FU Power Management Switch DC-DC Converter Unit: mm • Small Package • Low on Resistance : Ron = 0.18 Ω (max) (@VGS = −4 V) : Ron = 0.26 Ω (max) (@VGS = −2.5 V)
|
Original
|
PDF
|
SSM6J08FU
|
Untitled
Abstract: No abstract text available
Text: SSM6J08FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSII SSM6J08FU Power Management Switch DC-DC Converter Unit: mm • Small Package • Low on Resistance : Ron = 0.18 Ω (max) (@VGS = −4 V) • Low Gate Threshold Voltage : Ron = 0.26 Ω (max) (@VGS = −2.5 V)
|
Original
|
PDF
|
SSM6J08FU
|
SSM6J08FU
Abstract: No abstract text available
Text: SSM6J08FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSII Preliminary SSM6J08FU Power Management Switch DC-DC Converter • Small Package • Low on Resistance : Ron = 0.18 Ω (max) (@VGS = −4 V) : Ron = 0.26 Ω (max) (@VGS = −2.5 V)
|
Original
|
PDF
|
SSM6J08FU
SSM6J08FU
|
Untitled
Abstract: No abstract text available
Text: SSM6J08FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSII SSM6J08FU Power Management Switch DC-DC Converter Unit: mm • Small Package • Low on Resistance : Ron = 0.18 Ω (max) (@VGS = −4 V) : Ron = 0.26 Ω (max) (@VGS = −2.5 V)
|
Original
|
PDF
|
SSM6J08FU
|
Untitled
Abstract: No abstract text available
Text: SSM6J08FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSII SSM6J08FU Power Management Switch DC-DC Converter • Small Package • Low on Resistance : Ron = 0.18 : Ron = 0.26 • Unit: mm (max) (@VGS = −4 V) (max) (@VGS = −2.5 V) Low Gate Threshold Voltage
|
Original
|
PDF
|
SSM6J08FU
|
Untitled
Abstract: No abstract text available
Text: SSM6J08FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSII Preliminary SSM6J08FU Power Management Switch DC-DC Converter Unit: mm • Small Package • Low on Resistance : Ron = 0.18 Ω (max) (@VGS = −4 V) • Low Gate Threshold Voltage
|
Original
|
PDF
|
SSM6J08FU
|
Untitled
Abstract: No abstract text available
Text: SSM6J08FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSII Preliminary SSM6J08FU Power Management Switch DC-DC Converter Unit: mm • Small Package · Low on Resistance : Ron = 0.18 Ω (max) (@VGS = −4 V) · Low Gate Threshold Voltage
|
Original
|
PDF
|
SSM6J08FU
|
SSM6J08FU
Abstract: No abstract text available
Text: SSM6J08FU 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOSII SSM6J08FU ○ パワーマネジメントスイッチ ○ DC-DC コンバータ 単位: mm • 小型パッケージで高密度実装に最適 • オン抵抗が低い。 : Ron = 0.18 Ω (最大) (@VGS = −4 V)
|
Original
|
PDF
|
SSM6J08FU
SSM6J08FU
|
Untitled
Abstract: No abstract text available
Text: SSM6J08FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSII SSM6J08FU Power Management Switch DC-DC Converter Unit: mm • Small Package • Low on Resistance : Ron = 0.18 Ω (max) (@VGS = −4 V) : Ron = 0.26 Ω (max) (@VGS = −2.5 V)
|
Original
|
PDF
|
SSM6J08FU
|
5252 F 1009 4-pin
Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4
|
Original
|
PDF
|
|
lm2804
Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.
|
Original
|
PDF
|
BCE0030C
S-167
BCE0030D
lm2804
marking 513 SOD-323
land dpu 230
toshiba diode 1SS416 footprint
5252 F solar
sot23 2fv
TAH8N401K
IC sj 4558
zener diode reference guide
rn4983
|
SSM3K7002
Abstract: ESM 310 SSM3J16FU SSM3K03TE zener diode reference guide SSM5N03FE US6 KEC SSM5G01TU 6798 SSM3J13T
Text: S-MOS Series Small-Signal MOSFETs for Switching PRODUCT GUIDE S -MOS Family S-MOS Family Toshiba presents a range of small-signal MOSFET S-MOS devices which have been developed for various switching, interface and DC/DC converter applications. These MOSFETs have been classified into families according to application,
|
Original
|
PDF
|
3402C-0209
SSM3K7002
ESM 310
SSM3J16FU
SSM3K03TE
zener diode reference guide
SSM5N03FE
US6 KEC
SSM5G01TU
6798
SSM3J13T
|
|
IGBT GT30F124
Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ
|
Original
|
PDF
|
SCJ0004R
SC-43)
2SC1815
2SC732TM
2SC1959
2SA1015
2SC2240
2SA970
2SC1815
2SA1015
IGBT GT30F124
IGBT GT30J124
GT30F124
GT30J124
GT50N322
tk25e06k3
TPCP8R01
TK12A10K3
GT30G124
2SK3075
|
2SK4207
Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
Text: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3
|
Original
|
PDF
|
BCJ0082B
BCJ0082A
2SK4207
to220sis
TPCA*8023
tk80A08K3
TPC8119
TK40A08K3
2SK4112
ssm3j16fs
2sk3568
TPC8A03
|
TPCA*8064
Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
Text: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4
|
Original
|
PDF
|
BCE0082B
TPCA*8064
TK12A10K3
TPCA8077
2SK3567 equivalent
SSM3J328
TPCA8077-H
TJ11A10M3
TK50E06K3A
TPCA*8077
TPCA8028
|
8aa1
Abstract: esm 310 2SK982 733 SSOP10 kef q1 datasheet SSM3J13T SSM3K03TE 2SJ148 2SJ167 2SJ168
Text: 小型面実装MOS FET S-MOSシリーズ ● 当社は品質、信頼性の向上に努めておりますが、一般に半導体製品は誤作動した り故障することがあります。当社半導体製品をご使用いただく場合は、半導体製
|
Original
|
PDF
|
050106DAA1
12341D3AG
BDJ0099A
8aa1
esm 310
2SK982
733 SSOP10
kef q1 datasheet
SSM3J13T
SSM3K03TE
2SJ148
2SJ167
2SJ168
|
GT30F124
Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
|
Original
|
PDF
|
2010/9SCE0004K
SC-43)
2SC1815
700the
GT30F124
TPCP8R01
GT30J124
JAPANESE 2SC TRANSISTOR 2010
smd transistor h2a
smd marking 8L01
tk25e06k3
GT45F122
gt30g124
GT30F123
|
transistor bc 245
Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243
|
Original
|
PDF
|
SC-43)
2SC1815
TPS615
TPS616
TPS610
transistor bc 245
247Y
smd transistor h2a
gt30g122
gt35j321
GT45F123
MARKING SMD PNP TRANSISTOR h2a
GT45F122
GT45f122 Series
gt30f122
|
TK12A10K3
Abstract: tk12a10k TK33A60V TPCA*8065 TK40E10K3 SSM6K407TU TPCA*8064 tk6a65d equivalent TPCA*8036 TK100G10N1
Text: Semiconductor Catalog 2012-3 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 4
|
Original
|
PDF
|
|
tpc8118 equivalent replacement
Abstract: SSM3J307T Zener diode smd 071 A01
Text: 2009-9 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4
|
Original
|
PDF
|
BCE0082A
tpc8118 equivalent replacement
SSM3J307T
Zener diode smd 071 A01
|
TK12A10K3
Abstract: tk25e06k3 TK50E06K3A tk20e60u TPCA*8065 TJ11A10M3 SSM6J501NU TPCA8077 TJ9A10M3 TK8A10K3
Text: 製品カタログ 2010-9 東芝半導体 製品カタログ MOSFET S SE EM M II C CO ON ND DU UC C TT O OR R h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3
|
Original
|
PDF
|
BCJ0082D
BCJ0082C
TK12A10K3
tk25e06k3
TK50E06K3A
tk20e60u
TPCA*8065
TJ11A10M3
SSM6J501NU
TPCA8077
TJ9A10M3
TK8A10K3
|
TPCA*8030
Abstract: lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558
Text: 製品カタログ 2009-9 東芝半導体 製品カタログ 汎用小信号面実装対応素子 (トランジスタダイオード、セルパック) SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S
|
Original
|
PDF
|
TC7SZ126FU
SC-88A
OT-353
BCJ0052E
BCJ0052D
TPCA*8030
lm2804
TPCA*8036
2SK2033
TPC8037
Sj 88a diode
TPCA8028
TPC8A03
TC4W53FU
IC sj 4558
|