Untitled
Abstract: No abstract text available
Text: TA4017FT TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4017FT VHF Wide Band Amplifier Applications Features • High gain: |S21|2 = 13dB @45 MHz • Low distortion: IM3 = 42dB (@45 MHz) • Operating supply voltage: VCC = 4.75 V~5.25 V SSOP6-P-0.65
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TA4017FT
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Untitled
Abstract: No abstract text available
Text: SSOP64-P-525-0.80-BK Unit in millimeters typ., unless otherwise specified. Semiconductor Please consult OKI for soldering, assembly and storage recommendations. Specification are subject to change without notice. The drawings do not substitute or replace a product’s datasheet or the Package Information Databook.
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SSOP64-P-525-0
80-BK
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bu90030g
Abstract: 9 pin to 15 PIN wiring DIAGRAM
Text: 1/4 Structure Function Voltage Regulated Charge Pump IC Silicon Monolithic Integrated Circuit Product BU90030G - Input voltage range 2.0V～4.0V - PFM operation - Output voltage 4.0V typ - 1.5MHz(typ) switching frequency. - SSOP6 package Function Absolute Maximum rating（Ta=25c）
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BU90030G
75mW/c
R1010A
bu90030g
9 pin to 15 PIN wiring DIAGRAM
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SSOP6
Abstract: No abstract text available
Text: SSOP6 LSI Assembly Jisso Information • SSOP6 5 4 1 2 3 1.6 +0.2 −0.1 0.2Min. 6 + ° 4° −6 4° 0.13 +0.05 −0.03 1.1±0.05 0.05±0.05 1.25Max. 2.8±0.2 2.9±0.2 S 0.95 0.42 +0.05 −0.04 The contents described herein are subject to change without notice.
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25Max.
SSOP6
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SSOP6
Abstract: 21Saiin
Text: SSOP6 LSI Assembly • SSOP6 5 4 1 2 3 1.6 +0.2 −0.1 0.2Min. 6 + ° 4° −6 4° 0.13 +0.05 −0.03 1.1±0.05 0.05±0.05 1.25Max. 2.8±0.2 2.9±0.2 S 0.95 0.42 +0.05 −0.04 The contents described herein are subject to change without notice. 0.1 S Units : mm
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25Max.
SSOP6
21Saiin
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oki -bk
Abstract: No abstract text available
Text: SSOP60-P-700-0.65-BK Unit in millimeters typ., unless otherwise specified. Semiconductor Please consult OKI for soldering, assembly and storage recommendations. Specification are subject to change without notice. The drawings do not substitute or replace a product’s datasheet or the Package Information Databook.
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SSOP60-P-700-0
65-BK
oki -bk
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SSOP60
Abstract: 96125 700065
Text: SSOP60-P-700-0.65-BK Mirror finish 5 パッケージ材質 リードフレーム材質 端子処理方法・材質 パッケージ質量 g 版数/改版日 エポキシ樹脂 42 アロイ 半田メッキ (≥5µm) 1.21 TYP. 5 版/96.12.5
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SSOP60-P-700-0
65-BK
SSOP60
96125
700065
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Untitled
Abstract: No abstract text available
Text: SSOP64-P-525-0.80-K Mirror finish 5 パッケージ材質 リードフレーム材質 端子処理方法・材質 パッケージ質量 g 版数/改版日 エポキシ樹脂 42 アロイ 半田メッキ (≥5µm) 1.34 TYP. 3 版/96.12.5
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SSOP64-P-525-0
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Untitled
Abstract: No abstract text available
Text: SSOP64-P-525-0.80-K Mirror finish 5 Package material Lead frame material Pin treatment Package weight g Rev. No./Last Revised Epoxy resin 42 alloy Solder plating (≥5µm) 1.34 TYP. 3/Dec. 5, 1996
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SSOP64-P-525-0
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Untitled
Abstract: No abstract text available
Text: SSOP60-P-700-0.65-BK Mirror finish 5 Package material Lead frame material Pin treatment Package weight g Rev. No./Last Revised Epoxy resin 42 alloy Solder plating (≥5µm) 1.21 TYP. 5/Dec. 5, 1996
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SSOP60-P-700-0
65-BK
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SSOP6
Abstract: No abstract text available
Text: SSOP6 LSI Assembly Units : mm • SSOP6 2.9 5 4 1 2 3 2.8 1.6 6 H=1.25Max. The contents described herein are subject to change without notice. Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any
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25Max.
SSOP6
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64P2G-A
Abstract: No abstract text available
Text: 64P2G-A Plastic 64pin 525mil SSOP EIAJ Package Code SSOP64-P-525-0.80 JEDEC Code – Weight g 1.59 Lead Material Alloy 42 e I2 33 E Recommended Mount Pad F Symbol 1 32 A D y b A1 L e A2 L1 HE e1 64 b2 c Detail F A A1 A2 b c D E e HE L L1 y b2 e1 I2 Dimension in Millimeters
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64P2G-A
64pin
525mil
SSOP64-P-525-0
64P2G-A
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TB62752AFUG
Abstract: 122H
Text: TB62752AFUG TOSHIBA BiCD Integrated Circuit Silicon Monolithic TB62752AFUG Step Up Type DC-DC Converter for White LED The TB62752AFUG is a high efficient Step-Up Type DC-DC Converter specially designed for constant current driving of White LED. This IC contains N-ch MOSFET Transistor for Coil-Switching,
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TB62752AFUG
TB62752AFUG
122H
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CXLD140-6R8
Abstract: No abstract text available
Text: TB62732FU TOSHIBA BiCD Digital Integrated Circuit Silicon Monolithic TB62732FU Step-up DC/DC Converter for White LED Driver TB62732FU is the high efficiency Step-up type DC/DC converter that it is designed suitably in constant current lighting of white LED.
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TB62732FU
TB62732FU
CXLD140-6R8
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MSM5432128
Abstract: No abstract text available
Text: Pr E2L0045-17-Y1 el im DESCRIPTION The MSM5432126/8 is a new generation Graphics DRAM organized in a 131,072-word ¥ 32-bit configuration. The technology used to fabricate the MSM5432126/8 is OKI's CMOS silicon gate process technology. The device operates with a single 5 V power supply.
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E2L0045-17-Y1
MSM5432126/8
072-word
32-bit
32-bit
MSM5432128
64-pin
SSOP64-P-525-0
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TA4100F
Abstract: No abstract text available
Text: TOSHIBA TA4100F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA4100F UHF VHF RF, M IX APPLICATION FEATURES • High fT. fT = 5GHz • Differential Circuit is Composed of 3 Transistors. SSOP6-P-0.95 PIN ASSIGNMENT (TOP VIEW) B3 E W eight : 0.013g (Typ.)
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TA4100F
TA4100F
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LF33
Abstract: BIPOLAR M 846 of LF33 TA4100F
Text: SILICON MONOLITHIC BIPOLAR LINEAR INTEGRATED CIRCUIT TA41OOF UHF VHF RFf M IX APPLICATION FEATURES • High f j . f-j- = 5GHz • D ifferential Circuit is Composed of 3 Transistors. SSOP6-P (SM6) W e ig h t : 0.013g (Typ.) PIN A SSIG N M E N T (TOP V IE W )
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TA41OOF
TA4100F
LF33
BIPOLAR M 846
of LF33
TA4100F
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TA4100F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA4100F UHF VHF RF, M IX APPLICATION FEATURES • High fT. fT = 5GHz • Differential Circuit is Composed of 3 Transistors. SSOP6-P-0.95 PIN ASSIGNMENT (TOP VIEW) B3 E W eight : 0.013g (Typ.)
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TA4100F
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TA4100F
Abstract: ta4100
Text: TOSHIBA TA4100F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA41OOF UHF VHF RF, MIX APPLICATION FEATURES • High fT . fT = 5GHz • Differential Circuit is Composed of 3 Transistors. SSOP6-P-0.95 PIN ASSIGNMENT (TOP VIEW) B3 E W eight : 0.013g (Typ.)
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TA4100F
961001EBA2
TA4100F
ta4100
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Untitled
Abstract: No abstract text available
Text: SILICON MONOLITHIC BIPOLAR LINEAR INTEGRATED CIRCUIT TA4000F VHF-UHF WIDE BAND AMPLIFIER APPLICATIONS FEATURES • Band W id th 700MHz M in. @ 3 dB dow n • Low Noise 4dB (Typ.) @ f = 400MHz • Small Package M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC
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TA4000F
700MHz
400MHz
400MHz)
1000pF
IS22I
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MSM5416263
Abstract: 256x16* STATIC RAM weland SM5416
Text: OKI Semiconductor MSM5416263 262,144-W ord x 1 6 -Bit M ultiport D RA M DESCRIPTION The MSM5416263 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and asynchronously.
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MSM5416263
144-Word
16-Bit
MSM5416263
512-word
256x16* STATIC RAM
weland
SM5416
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MAS 10 RCD
Abstract: MSM54V32128 1DQ23
Text: O K I Semiconductor_ M SM 54V 32126/8_ 131,072-Word x 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM54V32126/8 is a new generation Graphic D RAM organized in 131,072-word x 32-bit configuration. The technology used to fabricate the MSM54V32126/8 is OKI's CM O S silicon gate
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MSM54V32126/8_
072-Word
32-Bit
MSM54V32126/8
MSM54V32128
MAS 10 RCD
1DQ23
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EZ23
Abstract: MSM5432128
Text: O K I Semiconductor MSM5432126/8_ 131,072-Word x 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5432126/8 is a new generation Graphic DRAM organized in 131,072-word x 32-bit configuration. The technology used to fabricate the MSM5432126/8 is OKI’s CMOS silicon gate
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MSM5432126/8_
072-Word
32-Bit
MSM5432126/8
MSM5432128
EZ23
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MSM5416283-60
Abstract: MSM5416283 SAM256
Text: O KI Semiconductor MSM5416283 262,144-Word x 16-Bit Multiport DRAM DESCRIPTION The MSM5416283 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and asynchronously.
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MSM5416283
144-Word
16-Bit
MSM5416283
512-word
SSOP60-P-700-0
MSM5416283-60
SAM256
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