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    SSR -25 DD Search Results

    SSR -25 DD Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    CD4014BPW Texas Instruments CMOS 8-Stage Static Shift Register 16-TSSOP -55 to 125 Visit Texas Instruments Buy
    CD4015BM96 Texas Instruments CMOS Dual 4-Stage Static Shift Register 16-SOIC -55 to 125 Visit Texas Instruments Buy
    CD4014BM96 Texas Instruments CMOS 8-Stage Static Shift Register 16-SOIC -55 to 125 Visit Texas Instruments Buy

    SSR -25 DD Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Grayhill 70s2-04-c-03-v

    Abstract: 70S2-03-C-25-S SSRT240D10 70s2-04-c-03-v pla relay 5 pin iso mini relay with 12 volts CRYDOM d2440 70S2-04-B-03-V Grayhill 70s2-04-b-12-s Grayhill 70S2
    Text: Your Contact for Relays SOLID STATE RELAYS CLASS 70S2 MINIATURE SSR’s FORMERLY GRAYHILL 2.5 Amp to 25 Amp Outputs CLASS 6 SSR’s 2.5 Amp to 125 Amp Outputs ! W E . N SR’s S HILL T. Y A VOL GR 6 6 S6 S . A CL -N.O T S SP PUT T U LO DUA .O. N T DPS EAR


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    M0125 D2D12 D1D20* D1D40* W6210DTX-3 Grayhill 70s2-04-c-03-v 70S2-03-C-25-S SSRT240D10 70s2-04-c-03-v pla relay 5 pin iso mini relay with 12 volts CRYDOM d2440 70S2-04-B-03-V Grayhill 70s2-04-b-12-s Grayhill 70S2 PDF

    Untitled

    Abstract: No abstract text available
    Text: SSR/U4N60A Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS on = 2.5 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µ A (Max.) @ VDS = 600V


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    SSR/U4N60A PDF

    SSR -100 DD

    Abstract: 600V 2A MOSFET N-channel U2N60 B4112 0G40471
    Text: SSR/U2N60A Advanced Power MOSFET FEATURES BVDSS - 6 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA Max. @ VDS = 600V


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    SSR/U2N60A b4112 0G40471 SSR -100 DD 600V 2A MOSFET N-channel U2N60 PDF

    U1N60

    Abstract: No abstract text available
    Text: SSR/U1N60A Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS on = 12 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 0.9 A Improved Gate Charge Extended Safe Operating Area D-PAK Lower Leakage Current : 25 µA (Max.) @ VDS = 600V


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    SSR/U1N60A U1N60 PDF

    SSR -100 DD

    Abstract: No abstract text available
    Text: SSR/U1N60A Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS on = 12 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 0.9 A Improved Gate Charge Extended Safe Operating Area D-PAK Lower Leakage Current : 25 µA (Max.) @ VDS = 600V


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    SSR/U1N60A SSR -100 DD PDF

    U2N60

    Abstract: No abstract text available
    Text: SSR/U2N60A Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS on = 5 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.8 A Improved Gate Charge Extended Safe Operating Area D-PAK Lower Leakage Current : 25 µA (Max.) @ VDS = 600V


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    SSR/U2N60A U2N60 PDF

    SSR -100 DD

    Abstract: MOSFET IRF VDs 600v SSR -25 DD POWER MOSFET Rise Time irf power mosfet
    Text: SSR/U1N60A Advanced Power MOSFET FEATURES BV dss = 600 V • Avalanche Rugged Technology ■ ^DS on = Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ ■ Lower Leakage Current : 25 |iA (Max.) @ VDS = 600V


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    SSR/U1N60A SSR -100 DD MOSFET IRF VDs 600v SSR -25 DD POWER MOSFET Rise Time irf power mosfet PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced SSR/U1N60A Power MOSFET FEATURES BVDSS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ^D S o n = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 600V B Low Rds(0n) ■ 9-390 £1 (Typ.)


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    SSR/U1N60A PDF

    U2N60

    Abstract: No abstract text available
    Text: Advanced SSR/U2N60A Power MOSFET FEATURES BVDSS - 600 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance ■ Improved Gate Charge lD = 1-8 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 600V


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    SSR/U2N60A \61tage U2N60 PDF

    SSR -100 DD

    Abstract: No abstract text available
    Text: SSR/U4N60A A dvanced Power MOSFET FEATURES BVDSS = 600 V Rugged Gate Oxide Technology ^DS on “ • ■ Lower Input Capacitance Improved Gate Charge _Q ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA (Max.) @ V DS = 600V ■ Lower R ds(on) : 2.037 ii(T y p )


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    SSR/U4N60A b4142 SSR -100 DD PDF

    MOSFET SSR

    Abstract: U1N60
    Text: SSR/U1N60A P o w e r MOSFET FEATURES BV D SS • R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge ^ D S o n = ■ E xtended S afe O pe ra ting A rea ■ Lo w e r Leakage C urrent : 25 |a.A (M ax.) @ V DS = 600V


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    SSR/U1N60A MOSFET SSR U1N60 PDF

    U2N60

    Abstract: No abstract text available
    Text: Advanced SSR/U2N60A P o w e r MOSFET FEATURES BV DSS = 600 V • R ugged G ate O xide T e ch n o lo g y ^ D S o n ■ Lo w e r Input C a pa citance lD ■ Im proved G ate C harge ■ E xtended S afe O pe ra ting ■ Lo w e r Leakage C urrent :25 |a.A (M ax.) @ V DS = 600V


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    SSR/U2N60A U2N60 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 256M bits DDR SDRAM with Super Self-Refresh EDD2516KCTA-SI 16M words x 16 bits Specifications Pin Configurations • Density: 256M bits • Organization ⎯ 4M words × 16 bits × 4 banks • Package: 66-pin plastic TSOP (II) ⎯ Lead-free (RoHS compliant)


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    EDD2516KCTA-SI 66-pin 333Mbps/266Mbps cycles/64d M01E0107 E0555E40 PDF

    7A SF

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 256M bits DDR SDRAM with Super Self-Refresh EDD2516KCTA-SI 16M words x 16 bits Specifications Pin Configurations • Density: 256M bits • Organization ⎯ 4M words × 16 bits × 4 banks • Package: 66-pin plastic TSOP (II) ⎯ Lead-free (RoHS compliant)


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    EDD2516KCTA-SI 66-pin 333Mbps/266Mbps M01E0107 E0555E40 7A SF PDF

    7A SF

    Abstract: EDD2516KCTA
    Text: PRELIMINARY DATA SHEET 256M bits DDR SDRAM with Super Self-Refresh EDD2516KCTA 16M words x 16 bits Specifications Pin Configurations • Density: 256M bits • Organization ⎯ 4M words × 16 bits × 4 banks • Package: 66-pin plastic TSOP (II) ⎯ Lead-free (RoHS compliant)


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    EDD2516KCTA 66-pin 333Mbps/266Mbps M01E0107 E0641E20 7A SF EDD2516KCTA PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SH IB A TSS5G45S, TSS5J45S TOSHIBA SOLID STATE AC RELAY • v mm v ■ v mmr g m wmr mmr wmr v ■ v v OPTICALLY ISOLATED, ZERO VOLTAGE TURN-ON, ZERO CURRENT TURN-OFF, NORMALLY OPEN SSR U nit in mm fi?n 2-^35 COMPUTER PERIPHERALS MACHINE TOOL CONTROLS DDArCCC


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    TSS5G45S, TSS5J45S PDF

    SSR -40 DD

    Abstract: SSR -25 DD SSR -100 DD 861HSSR led 1 w 48 VDC voltage regulator SSR -60 DD
    Text: R e l a y s S t a t e 861H Class 1, Division 2 Certified Solid State Relay GENERAL SPECIFICATIONS File No. E317746 www.magnecraft.com Class 1, Division 2 certification for use in hazardous locations IEC 60947-1 OUTPUT CHARACTERISTICS 861HSSR*-DD 861HSSR*-AC-1


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    E317746 861HSSR* 400SP02-0709 SSR -40 DD SSR -25 DD SSR -100 DD 861HSSR led 1 w 48 VDC voltage regulator SSR -60 DD PDF

    SSR -25 DD

    Abstract: SSR -100 DD 48 VDC voltage regulator 861HSSR SSR -40 DD mosfet current limiter E317746
    Text: R e l a y s S t a t e 861H Class 1, Division 2 Certified Solid State Relay GENERAL SPECIFICATIONS File No. E317746 www.magnecraft.com Class 1, Division 2 certification for use in hazardous locations IEC 60947-1 Output Characteristics 861HSSR*-DD 861HSSR*-AC-1


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    E317746 861HSSR* 400SP02-0709 SSR -25 DD SSR -100 DD 48 VDC voltage regulator 861HSSR SSR -40 DD mosfet current limiter E317746 PDF

    Untitled

    Abstract: No abstract text available
    Text: IL329 SIEMENS Optically Coupled Telecom Switch Preliminary Data Sheet FEATURES • Solid state relay and AC input • Optocoupler Package— Single 18 Pin • I/O Isolation, 2500 VRMS • Surface Mountable • Optocoupler - Bidirectional C urrent Detection


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    IL329 IL329 18-pln fl535t PDF

    SSR -100 DD

    Abstract: SSR -25 DD SSR -60 DD IGBT SSR ac ssr SSR -40 DD SSR G THYRISTOR H 1500 three phase motor h brige reversing ssr
    Text: Type Designation Solid State Relay Thyristor/Diode SMTC1-1500F-16-LGD12 SM - Sempo trademark T - thyristor-thyristor module; D - diode-diode module; A - semiconductors A series; C - semiconductors C series; - group of repetitive peak off-state and reverse voltage:


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    SMTC1-1500F-16-LGD12 00-1600V; 600-2200V; 400-3600V; 200-5000V; 000-6500V; 000-8500V; SMTC1-1500F-Stud SMPD-100S-12-M21 SMDS-100H-18-M30 SSR -100 DD SSR -25 DD SSR -60 DD IGBT SSR ac ssr SSR -40 DD SSR G THYRISTOR H 1500 three phase motor h brige reversing ssr PDF

    zilog Smart usb cable schematic

    Abstract: zilog Smart serial cable schematic Zilog Serial Smart Cable schematic CPC1020 solid state relay RD0006-SC01 Clare Relay SSR -25 DD optomos relay UM0181
    Text: Reference Design Mini-Z Solid State Relay Design Board RD000702-1011 Overview The Solid State Relay SSR Design Board, a complete and easy-to-use development platform for Zilog’s series of Mini-Z stamp modules, is designed to provide engineers, students


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    RD000702-1011 zilog Smart usb cable schematic zilog Smart serial cable schematic Zilog Serial Smart Cable schematic CPC1020 solid state relay RD0006-SC01 Clare Relay SSR -25 DD optomos relay UM0181 PDF

    Solid State Relays

    Abstract: 8501CT1002 A 3150 V schneider overload relay WIRING DIAGRAM SSR -60 DD Triac AC INRUSH CURRENT LIMITER 70S2-01-A-03-V SSR220DIN-AC22 semiconductors cross reference Triac INRUSH CURRENT LIMITER
    Text: Magnecraft Solid State Relays Catalog 2010 Contents Magnecraft® Solid State Relays „„ Series


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    Relays10 Relays19 Guide30 Guide31 8501CT1002 Solid State Relays 8501CT1002 A 3150 V schneider overload relay WIRING DIAGRAM SSR -60 DD Triac AC INRUSH CURRENT LIMITER 70S2-01-A-03-V SSR220DIN-AC22 semiconductors cross reference Triac INRUSH CURRENT LIMITER PDF

    ECC89

    Abstract: STR 6267 str g 5551 6C51H-B 6N3C ecc189 6H13C 6l6gt str f 6267 6CM5
    Text: 6 Z a 121200 MOSKVA G 200 ELECTRONQRGTECHNICA 5 2 ELORG MOSKVA 200 0 240-96-07 5 3 411.386 REPLACEMENT GUIDE for USSR and FOREIGN ELECTRONIC TUBES U SSR - M O SC O W Type of U SSR Foreign eq u ivalen ts iA in 1147c 1142111 31422c 5J1038M 5I43C 5I44M K 5I44C


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    1147c 31422c 5J1038M 5I43C 5I44M 5I44C 6/H22C WT171 DY802 GY501 ECC89 STR 6267 str g 5551 6C51H-B 6N3C ecc189 6H13C 6l6gt str f 6267 6CM5 PDF

    Application Note 60

    Abstract: spice model TRIAC OUTPUT OPTOCOUPLER phototransistor spice model phototriac Spice sSR spice model spice model solid state relay IN5235 mosfet dc switch arcing spice model exercise "P-Channel JFET"
    Text: VISHAY SEMICONDUCTORS www.vishay.com Optocouplers Application Note 60 SSR Design Using VO1263 INTRODUCTION A solid state relay SSR is a semiconductor device that can be used in place of a mechanical relay in many applications to switch electricity to a load. SSRs are purely electronic and


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    VO1263 SUD50N04 1N5235B 2N3904 2N3904 VO1263 Application Note 60 spice model TRIAC OUTPUT OPTOCOUPLER phototransistor spice model phototriac Spice sSR spice model spice model solid state relay IN5235 mosfet dc switch arcing spice model exercise "P-Channel JFET" PDF