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    ST DIODE 1N60 Search Results

    ST DIODE 1N60 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    ST DIODE 1N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N60P

    Abstract: ST60P 1N60S 20PF
    Text: ST60P, ST60S SILICON SCHOTTKY BARRIER DIODE Characteristics equivalent to Max. 0.5 1.9 max 3.9 max 1N60P and 1N60S Black Cathode Band Black Part No. Black "ST" Brand 4.5± 1.0 R5 max Min. 27.5 Max. 1.9 10.0± 1.0 XXX Max. 3.9 ST 1.0 max Min. 27.5 Glass case DO-35-1


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    PDF ST60P, ST60S 1N60P 1N60S DO-35-1 DO-35 ST60P ST60P 1N60S 20PF

    ST 1N60

    Abstract: 1N60 fm am 1N60 germanium diode germanium diode 1N60 1n60 diode
    Text: HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| l l Enter Your Part # Home Online Store ¡ Diode s ¡ Transistors ¡ Inte grate d C ircuits ¡ O ptoe le ctronics ¡ Thyristors l Products ¡ Se arch for Parts ¡ R e que st a Q uote ¡ Te st House s


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    LL60P

    Abstract: 1N60P 20PF
    Text: ST LL60P SILICON SCHOTTKY BARRIER DIODE Characteristics equivalent to or better than 1N60P ideal for used in detection or for switching on the radio, TV, etc. Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Reverse Voltage dc VR 20 V Peak Reverse Voltage


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    PDF LL60P 1N60P LL60P 1N60P 20PF

    LL60P

    Abstract: 1N60P 20PF
    Text: ST LL60P SILICON SCHOTTKY BARRIER DIODE Characteristics equivalent to or better than 1N60P ideal for used in detection or for switching on the radio, TV, etc. Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Reverse Voltage dc VR 20 V Peak Reverse Voltage


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    PDF LL60P 1N60P LL60P 1N60P 20PF

    20pf

    Abstract: 1N60P
    Text: ST 60P SILICON SCHOTTKY BARRIER DIODE Characteristics equivalent to or better than 1N60P ideal for used in detection or for switching on the radio, TV, etc. Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Peak Reverse Voltage VRM 45 V Reverse Voltage dc


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    PDF 1N60P 40MHz 20pf 1N60P

    LL60P

    Abstract: 1N60P 20PF
    Text: ST LL60P SILICON SCHOTTKY BARRIER DIODE Characteristics equivalent to or better than 1N60P ideal for used in detection or for switching on the radio, TV, etc. Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Reverse Voltage dc VR 20 V Peak Reverse Voltage


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    PDF LL60P 1N60P LL60P 1N60P 20PF

    1N60P

    Abstract: 20pf
    Text: ST 60P SILICON SCHOTTKY BARRIER DIODE Characteristics equivalent to or better than 1N60P ideal for used in detection or for switching on the radio, TV, etc. Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Peak Reverse Voltage VRM 45 V Reverse Voltage dc


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    PDF 1N60P 40MHz 1N60P 20pf

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


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    PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    07N65

    Abstract: fusible 1a SMD LN4148 10471 VARISTOR
    Text: Innovative Green Power Solutions AC/DC Charger/Adapter Reference Designs ACT51X Rev 1.5 Oct 2012 -1- www.active-semi.com High Performance AC/DC Switching Power Solutions Application Change Note Revision History Page 4,6,8,10,12,14,16,18,20,22,24 2012-Oct– 19


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    PDF ACT51X 2012-Octâ ACT512 PC817C -26For 07N65 fusible 1a SMD LN4148 10471 VARISTOR

    BU4508DX equivalent

    Abstract: BUT11APX equivalent S0806MH P0201MA TO92 BT136 application note diode cross reference BYW96E ct 2A05 diode BU2508Dx equivalent ST2001HI equivalent BU2508DF equivalent
    Text: 6535 07-03-2001 06:32 Pagina 1 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210


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    PDF BT148-600R BT148-400R BU4508DX equivalent BUT11APX equivalent S0806MH P0201MA TO92 BT136 application note diode cross reference BYW96E ct 2A05 diode BU2508Dx equivalent ST2001HI equivalent BU2508DF equivalent

    BUT11APX equivalent

    Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
    Text: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210


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    PDF BT148-600R BT148-400R BUT11APX equivalent BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice

    1N6098

    Abstract: 1N609 1N6097 40HFL40S02 DO-203AB IRFP460 diode 2329
    Text: Bulletin PD-2.329 rev. B 11/02 1N6097 1N6098 50 Amp SCHOTTKY RECTIFIER TO-203AB DO-5 Description/ Features Major Ratings and Characteristics The 1N609. Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary


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    PDF 1N6097 1N6098 O-203AB 1N609. IRFP460 40HFL40S02 1N6097, 1N6098 1N609 1N6097 40HFL40S02 DO-203AB IRFP460 diode 2329

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


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    PDF SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N

    317 mg

    Abstract: No abstract text available
    Text: 1N6073 thru 1N6081 VOIDLESS HERMETICALLY SEALED ULTRA FAST RECOVERY GLASS POWER RECTIFIERS SCOTTSDALE DIVISION APPEARAN CE This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF19500/503 and is ideal for high-reliability applications where a failure cannot be


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    PDF 1N6073 1N6081 MIL-PRF19500/503 1N6073US 1N6081US) 1N6079, 1N6080 1N6076, 1N6077 317 mg

    TRANSISTOR REPLACEMENT ECG

    Abstract: LC filter dimmer Triac low voltage ac dimmer schematic Triac AC INRUSH CURRENT LIMITER led dimmer diagrams mosfet TRANSISTOR ECG HV9931DB4 zero crossing dimmer RC0805FR-0715KL R31D
    Text: Supertex inc. HV9931DB4 Dimmer Switch Compatible Off-line LED Driver, Co O Fo n B r ta SO R ct L ep E T F D la a E es c ct ig em or n en y t Universal Input, PFC, 25V, 750mA Load General Description The DB4 demo board is an off-line LED driver design which is


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    PDF HV9931DB4 750mA 750mA 225mA) HV9931 225MW OT-23 BZX84C12LT1 1SMB5956BT3 TRANSISTOR REPLACEMENT ECG LC filter dimmer Triac low voltage ac dimmer schematic Triac AC INRUSH CURRENT LIMITER led dimmer diagrams mosfet TRANSISTOR ECG HV9931DB4 zero crossing dimmer RC0805FR-0715KL R31D

    philips ecg master replacement guide

    Abstract: ecg semiconductors master replacement guide ECG transistor replacement guide book free philips ecg semiconductors master replacement guide oz 8602 gn AC digital voltmeter using 7107 smd glass zener diode color codes cd 1619 CP fm radio russian transistor cross-reference yd 7377
    Text: Chapter 7 Component Data and References Component Data None of us has the time or space to collect all the literature available on the many different commercially available manufactured components. Even if we did, the task of keeping track of new and obsolete


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    ECG transistor replacement guide book free

    Abstract: philips ecg master replacement guide one chip tv ic 8873 ecg semiconductors master replacement guide philips ecg semiconductors master replacement guide cd 1619 CP fm radio smd transistor 5AW replacement of bel 187 transistor ecg philips semiconductor master book SUBSTITUTE FOR A bel 187 transistor
    Text: Chapter 7 Component Data and References Component Data None of us has the time or space to collect all the literature available on the many different commercially available manufactured components. Even if we did, the task of keeping track of new and obsolete


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    1N60P

    Abstract: 20PF
    Text: ST 60 P SILICON SCHOTTKY BARRIER DIODE Silicon Schottky Barrier Diode Characteristics equivalent to or better than 1N60P ideal for used in detection or for switching on the radio, TV, etc. max. 1.90 Cathode M ark m ax. 0.520 Glass case JEDEC DO-35 Dimensions in mm


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    PDF 1N60P DO-35 20PF

    A1W TRANSISTOR

    Abstract: N4001 diode a39 diode a1w* transistor DIODE 1N1343 A1W diode 1N5815 Diode diode 1N5825 TRANSISTOR A52 1N4822
    Text: 2TC 000 98 2848352 DIODE TRA NSI ST OR CO INC 7^-0/- O/ E T m T 5fl4fl3SE ODDODTfl h RECTIFIERS DEVICES PKG DEVICES PKG DEVICES PKG DEVICES PKG DEVICES PKG 1N 1183 1N1185 1N1185A 1N 1186 1N 1186A 1N 1187 1N1187A 1N1188 1N1188A 1N 1190 1N 1200 1N1200A 1N1201


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    PDF 403SE 1N1183 1N1615 1N3743 1N4006 1N5002 1N1185 1N1616 1N3744 1N4007 A1W TRANSISTOR N4001 diode a39 diode a1w* transistor DIODE 1N1343 A1W diode 1N5815 Diode diode 1N5825 TRANSISTOR A52 1N4822

    1N843

    Abstract: 1N682 1N683 1N863 CI 4011 SJ 2036 1N643 1N662 1N663 IN862
    Text: 26 August 1971 SUPERSEblNG M IL-S-18500/258B MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, TYPES 1N643, 1N662 AND 1N663 This specification la m andatory for use by a ll D epart­ m ents and Agencies of the D epartm ent d befense?"


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    PDF MIL-S-19500/256C MIL-S-10500/258B 1N643, 1N662 1N663 1N643 1N082 1N863 1N843 1N682 1N683 CI 4011 SJ 2036 1N663 IN862

    transistor cross reference

    Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
    Text: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC


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    1n60e

    Abstract: MTD1N60E
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTD1N60E TMOS E-FET ™ Power Field Effect Transistor DPAK for Surface Mount M otorola Preferred Device TMOS POWER FET 1.0 AMPERE 600 VOLTS RDS on = 8.0 OHM N-Channel Enhancement-Mode Silicon Gate


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    PDF 0E-05 0E-04 0E-03 OE-02 0E-01 1n60e MTD1N60E

    to3a

    Abstract: 000D1E7 N95 DIODE 1N111 germanium diode 1n69 N70a 1N69A diode 1N62 gold bonded germanium diode
    Text: "I 0<S B K C INTERNATIONAL 30E D BKC International Electronics Inc. • 117^03 D00Q3E5 2 ■ ' T ’O l - O '? 6 Lake Street PO Box 1436 Lawrence, MA USA 01841 Telephone 617 681-0392 • TeleFax (617) 681-9135 • Telex 928377 M oldbondeddiodes TYPE 1N60A


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    PDF DQDD35S 1N60A 150mA 300nS to3a 000D1E7 N95 DIODE 1N111 germanium diode 1n69 N70a 1N69A diode 1N62 gold bonded germanium diode

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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