transistor JF
Abstract: ST1000EX21
Text: ST1000EX21 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR TENTATIVE ST1000EX21 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm All Electric contacts by Pressure Structure and Airtight Package Anti−Parallel Fast Recovery Diode in This Package
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Original
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PDF
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ST1000EX21
transistor JF
ST1000EX21
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transistor JF
Abstract: No abstract text available
Text: ST1000EX21 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR TENTATIVE ST1000EX21 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm All Electric contacts by Pressure Structure and Airtight Package Anti−Parallel Fast Recovery Diode in This Package
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Original
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PDF
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ST1000EX21
ST1000EX21
1250g
transistor JF
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ST1000EX21
Abstract: transistor JF 1000A diode 5V IGBT 1000A
Text: TOSHIBA ST1000EX21 TENTATIVE TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR ST1000EX21 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • All Electric contacts by Pressure Structure and Airtight Package Anti-Parallel Fast Recovery Diode in This Package
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OCR Scan
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PDF
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ST1000EX21
60MAX.
1250g
ST1000EX21
transistor JF
1000A diode 5V
IGBT 1000A
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Untitled
Abstract: No abstract text available
Text: TO SH IBA ST1000EX21 TENTATIVE TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR ST1000EX21 HIGH POWER SWITCHING APPLICATIONS Unit in mm M OTOR CONTRO L APPLICATIONS • All Electric contacts by Pressure Structure and Airtight finivi a x . Package • Anti-Parallel Fast Recovery Diode in This Package
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OCR Scan
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PDF
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ST1000EX21
1250g
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