ST2305A
Abstract: No abstract text available
Text: ST2305A P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST2305A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are
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ST2305A
ST2305A
OT-23-3L
-15V/-3
45m-ohm
55m-ohm
-15V/-2
90m-ohm
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Untitled
Abstract: No abstract text available
Text: ST2305A P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST2305A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are
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Original
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PDF
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ST2305A
ST2305A
OT-23-3L
-20V/-3
45m-ohm
55m-ohm
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