ST2341M
Abstract: No abstract text available
Text: M ST2341 ST2341M P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST2341M is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are
|
Original
|
ST2341M
ST2341M
OT-23-3L
-20V/-2
-20V/-CS
ST2341
|
PDF
|
p channel mosfet 10a 20v
Abstract: No abstract text available
Text: ST2341 P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST2341 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are
|
Original
|
ST2341
ST2341
OT-23-3L
-20V/-3
36m-ohm
-20V/-2
45m-ohm
55m-ohm
p channel mosfet 10a 20v
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ST2341SRG P Channel Enhancement Mode MOSFET -3.2A DESCRIPTION ST2341SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for
|
Original
|
ST2341SRG
ST2341SRG
OT-23
-20V/-3
-20V/-2
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ST2341S23RG P Channel Enhancement Mode MOSFET -5.3A DESCRIPTION ST2341S23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are
|
Original
|
ST2341S23RG
ST2341S23RG
OT-23-3L
-20V/-3
30m-ohm
-20V/-2
ST2341SRG3RG
|
PDF
|