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    STATIC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD2114A-5 Rochester Electronics LLC SRAM Visit Rochester Electronics LLC Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B7PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
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    Chip Quik Inc METAL-WIPES-ANTISTATIC

    METAL CHELATING WIPES ANTI-STATI
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    DigiKey METAL-WIPES-ANTISTATIC Bulk 49 1
    • 1 $16.95
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    Mouser Electronics METAL-WIPES-ANTISTATIC 48
    • 1 $16.95
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    StarTech SM-ANTI-STATIC-MAT

    TABLE MAT PVC BEIGE 1.5'
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    DigiKey SM-ANTI-STATIC-MAT 35 1
    • 1 $29.33
    • 10 $26.35
    • 100 $24.2281
    • 1000 $23.55652
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    Newark SM-ANTI-STATIC-MAT Bulk 4 1
    • 1 $40.4
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    RS SM-ANTI-STATIC-MAT Bulk 1 2 Weeks 1
    • 1 $29.62
    • 10 $25.18
    • 100 $22.81
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    NAC SM-ANTI-STATIC-MAT 12 1
    • 1 $26.16
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    Neutron USA SM-ANTI-STATIC-MAT 50
    • 1 $54.99
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    Chip Quik Inc STENCIL-WIPES-ANTISTATIC

    STENCIL WIPES ANTI-STATIC (IPA/W
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    DigiKey STENCIL-WIPES-ANTISTATIC Bulk 16 1
    • 1 $14.95
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    Mouser Electronics STENCIL-WIPES-ANTISTATIC 43
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    E-Switch Inc KO130CESDANTISTATIC

    SWITCH KEYLOCK 3POS SP3T 4A 125V
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    E-Switch Inc KO130RA126ANTISTATIC

    SWITCH KEYLOCK 2POS SPDT 4A 125V
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    STATIC Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    150610 Static Control Components Aaccessories, Static Shielding Bag Metal-Out Original PDF
    HGS1MD-RED Static Control Components Static Control Grounding Cords, Straps, Static Control, ESD, Clean Room Products, FOOT GROUNDER ASSY W/RES Original PDF

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    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TC55417P/J —15H. TC55417P/J-20H TC55417P/J—25H. TC55417P/J-35H • * 16,384 W O R D x 4 BIT CMOS STATIC RAM DESCRIPTION The TC55417P/J—H is a 65,536 bit high speed static random access memory organized as 16,384 words by 4 bits using CMOS technology, and operated from a single 5 - volt supply.


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    PDF TC55417P/J --15H. TC55417P/J-20H TC55417P/J--25H. TC55417P/J-35H TC55417P/J-- 120mA 100mA TC55417P/J--H

    ic tl 741

    Abstract: S47C256
    Text: AD V A N C E INFORM ATION TM S47C256 32,768-W ORD BY 8-BIT R EAD -O N LY M EM O R Y NOVEM BER 1 9 8 5 3 2 ,7 6 8 X 8 Organization N PACKAGE TOP VIEW Fully Static (No Clocks. No Refresh) NC C 1 y j 2 Q : 27 : A12 C 2 A7 C 3 26 : All Inputs and Outputs TTL Compatible


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    PDF S47C256 256-1S ic tl 741

    260-pin

    Abstract: No abstract text available
    Text: TOSHIBA TC55V1864J/FT-10/12/15 PRELIMINARY SILICON GATE CMOS 65,536 WORD x 18 BIT CMOS STATIC RAM Description TheTC55V1864J/FT is a 1,179,648 bit high speed CMOS static random access memory organized as 65,536 words by 18 bits and operated from a single 3.3V : upply. Toshiba’s advanced CMOS technology and circuit design enable high speed operation.


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    PDF TC55V1864J/FT-10/12/15 TheTC55V1864J/FT TC55V1864J/FT TC55V1864J/ B-143 260-pin

    Untitled

    Abstract: No abstract text available
    Text: • ■ ! ■ ■ ■ ■ • '|<f TOSHIBA MIOS MEMORY PRODUCTS 8,192 WORD X 8 BIT CM OS STATIC RAM SILICON GATE C M O S T C 5 5 63 A P L-1 0, T C 5563A P L-12 T C 55 6 3 A P L -1 5 DESCRIPTIO N The TC5563APL is 65,536 bit static random access memory organized as 8,1 92 words by 8 bits


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    PDF TC5563APL TMM2764D) 6D28A-P)

    Untitled

    Abstract: No abstract text available
    Text: TT ï>Ëf| TOT755O 0D17554 S 990 17224 9097250 TOSHIBA <DISCRETE/OPTO D"T-m-33 TLR358, TLR359, TLR328, TLR329 • RED Color, 13.5ao o.;53")Charactec Height Numerical Display. • Pin Connections for Static Drive • Available Both Polarity of Connections, Common Cathode or Coanon Anode.


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    PDF OT755O 0D17554 T-m-33 TLR358, TLR359, TLR328, TLR329 TLR358 TLR359 TLR328

    TLR4202

    Abstract: TLC2207 TL6220 TLR2207 TLC2177 TL62207/TLR2207
    Text: T TOSHIBA {DISCRETE/OPTO} 9097250 T O S H IB A 99D < D IS C R E T E /O P T O 17259 D T -4 1 -S3 TLG2 I77, TLG4 I72, TLG2207, TLG4202 GREEN COLOR 4 D IG IT S L E D D IS P L A Y * For uje of Static drive connections and available both polarity coonon anode or


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    PDF TLG2207, TLG4202 TLG2207 TLC2177 TLG4172 TLG2177/TLR21771 TLG4172/TLM172 TL62207/TLR2207, TLR42Q TLR4202 TLC2207 TL6220 TLR2207 TL62207/TLR2207

    TC528257

    Abstract: n724
    Text: TOSHIBA SILICON GATE CMOS TC528257 t a r g e t s p e c 262,144WORDS X 8BITS MULTIPORT DRAM DESCRIPTION The TC528257 is a 2M bit CM OS multiport m em ory equipped with a 262,144-w ords by 8 -bits dynam ic random access m em ory RAM port and a 512-words by 8 -bits static serial access m emory (SA M ) port. The


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    PDF TC528257 144WORDS TC528257 144-w 512-words TC528257J/SZ/nVTR1017240 TC528257J/SZ/FT/TR-70 TC528257J/SZ/FT/TR-80 n724

    UM61256FK-15

    Abstract: um61256fs 15 UM61256FS-15 um61256f um61256fk15 UM61256FK UM61256FM-25 um61256 UM61256FK-12 um61256fs
    Text: UM61256F Seríes 32K X a High Speed CMOS SRAM Features • * ■ ■ ■ Single +5V power supply ■ Access times: 12 /15/2 5 ns max. ■ Current: Operating: 150mA (max.) Standby: 12mA (max.) ■ Full static operation, no clock o r refreshing required Directly TTL compatible: All inputs and outputs


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    PDF UM61256F 150mA 28-pin 144-bit UM61256FK-12 UM61256FS-12 UM61256FK-15 UM61256FS-15 um61256fs 15 um61256fk15 UM61256FK UM61256FM-25 um61256 um61256fs

    lt928

    Abstract: 55328P TC55328J
    Text: 3 2 ,7 6 8 W O R D x 8 B IT C M O S S TA TIC R A M D E S C R IP T IO N The TC55328P/J is a 262,144 bits high speed static random access memory organized as 32,768 words by 8 bits using CMOS technology, and operated from a single 5-volt supply. Toshiba's CMOS


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    PDF TC55328P/J TC55328P/J-20 TC55328P/J--25, TC55328P/J-35 DIP28 TC55328P/J--17, lt928 55328P TC55328J

    Untitled

    Abstract: No abstract text available
    Text: SN54ALVTH16652, SN74ALVTH16652 2.5-V/3.3-V 16-BIT BUS TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS SCES192 - FEBRUARY 1999 State-of-the-Art Advanced BiCMOS Technology ABT Widebus Design for 2.5-V and 3.3-V Operation and Low Static-Power Dissipation


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    PDF SN54ALVTH16652, SN74ALVTH16652 16-BIT SCES192

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V1664J/FT-10/12/15 PRELIMINARY SILICON GATE CMOS 65,536 WORD x 16 BIT CMOS STATIC RAM Description The TC55V1664J/FT is a 1,048.5,'6 bit high speed CMOS static random access memory organized as 65,536 words by 16 bits and operated from a single 3.3V sjpply. Toshiba's advanced CMOS technology and circuit design enable high speed operation.


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    PDF TC55V1664J/FT-10/12/15 TC55V1664J/FT TC55V-: 664J/FT TC55V1 B-135

    Untitled

    Abstract: No abstract text available
    Text: Tem ic 80C32/80C52 Semiconductors CMOS 0 to 44 MHz Single Chip 8-bit Microcontroller 1. Description TEMIC’s 80C52 and 80C32 are high performance CMOS versions of the 8052/8032 NMOS single chip 8 bit Microcontroller. The fully static design of the TEMIC 80C52/80C32


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    PDF 80C32/80C52 80C52 80C32 80C52/80C32 80C32: 80C52 80C32/80C52-L16:

    LQFP-100

    Abstract: No abstract text available
    Text: TOSHIBA TC55WD1618FF-133,-150,-167 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 1,048,576-WORD BY 18-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM DESCRIPTION The TC55WD1618FF is a synchronous static random access memory SRAM organized as 1,048,576 words by


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    PDF TC55WD1618FF-133 TC55WD1618FF LQFP100-P-1420-0 LQFP-100

    TC51832FL10

    Abstract: TC51832 TC51832FL-10 TC51832PL-10 256IC 832P
    Text: 832P/S 832 P/S 832P/S 32,768 WORD x 3 BIT CMOS PSEUDO STATIC RAM IDESCRIPTION] The TC51832 Family is a 256IC bit high-speed CMOS Pseudo-Static RAM organized as 32,768 words by 8 bits. The TC51832 Family utilizes one transistor dynamic memory cell array with


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    PDF 832P/S 832P/S TC51832 256IC TC51832P plastic/SP/F/PL/SPL/FL-12 DIP28-P-300) TC51832FL10 TC51832FL-10 TC51832PL-10 832P

    UM621024B

    Abstract: UM621024 um621024bm-70l
    Text: UM621024B Seríes 128K X 8 CMOS SRAM Features • Single +5V power supply ■ Access times: 55/70 ns max. ■ Current: Low power version: Operating: 70mA Standby: 100(iA Very low power version: Operating: 70mA Standby: 25 (¿A * Full static operation, no clock or refreshing


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    PDF UM621024B 32-pin 576bit UM621024BV-70L UM621024BV-70LL UM621024BVR-70L UM621024BVR-70LL UM621024B-10L UM621024 um621024bm-70l

    44LSO

    Abstract: No abstract text available
    Text: UM23L64100 4,1 9 4 ,3 0 4 X 16/8,388,608 X 8 BIT LOW VOLTAGE CMOS M ASK ROM P R E LIM IN A R Y Features • 4,194,304 x 1 6 /8 ,3 88 ,6 0 8 x 8-bit o rga n izatio n 1 Full static ope ra tio n ■ S ing le + 3 V p o w e r su pp ly 1 T T L-co m p atib le inputs and o utp uts


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    PDF UM23L64100 200ns 48-pin 44-pin 23L64100 100pF 23L64100F 44LSO

    Untitled

    Abstract: No abstract text available
    Text: SMJ684002 512K BY 84HT STATIC RANDOM-ACCESS MEMORY _ * Single 5-V ± 10% Power Supply HJA/HKE PACKAGE TOP ViEW f • • Fast Access Time 20125/35 ns Equal Address and Chip-Enable Access Time • • • All Inputs and Outputs Are TTL-Compatible


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    PDF SMJ684002 SGMS736 36-Pin, 400-mil

    Untitled

    Abstract: No abstract text available
    Text: TMS47128 16,384-WORD BY 8-BIT READ-ONLY MEMORY JU N E 1 9 8 3 - N PACKAGE 1 6 ,3 8 4 X 8 Organization TOP VIEW Fully Static (No Clocks, No Refresh) NC £ 1 All Inputs and Outputs TTL Compatible 2 8 3 V CC 2 7 3 S 2 /S 2 A 12 £ 2 A 7C 3 Single 5-V Power Supply


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    PDF TMS47128 384-WORD

    UM61M512K-15

    Abstract: UM61M512K15 UM61M512 um61M512K UM61M512-20 um61m UM61M51
    Text: UM61M512 Seríes 64KX 8, 3.3V I/O High Speed CMOS SRAM Features • Single +5V power supply * Access times: 15/20 ns max. ■ Current: Operating: 160mA (max.) Standby. 10mA (max.) ■ Full static operation, no clock or refreshing required ■ 3.3V I/O com patible


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    PDF UM61M512 160mA 32-pin 288bit UM61M512K-15 UM61M512K-20 UM61M512K15 um61M512K UM61M512-20 um61m UM61M51

    TMS47C256 ROM

    Abstract: No abstract text available
    Text: TE XA S INS TR -CASIC/NEHORY} 77 ADVANCE INFORMATION 0^1725 DE 0040=107 4 | ~ TMS47C256 32,768-WORD BY 8-BIT READ-ONLY M EM O RY NOVEMBER 1985 N PACKAGE • 32,768 X 8 Organization • Fully Static No Clocks, No Refresh • All Inputs and Outputs TTL Compatible


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    PDF TMS47C256 768-WORD TMS47C256 ROM

    Untitled

    Abstract: No abstract text available
    Text: TC5050P C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC5050P DUAL 50/64 STAGE STATIC SHIFT REGISTER T C5050P is static shift register consisting of D type flip-flops, and can be used as e i ther 50 bit shift register or 64 bit shift register d e pending on OUTPUT


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    PDF TC5050P C5050P

    Untitled

    Abstract: No abstract text available
    Text: 7. COMMON EL ECT RI CA L CHA RA C TE RI ST IC S 7 -1 P o w sr D issip ation The power dissipation of CMOS device is composed of two components: one static, the other dynamic. The total power dissipation is the sum of static and dynamic power dissipation. Static power dissipation is obtained by multiplying quiescent supply current by the supply voltage range


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    PDF AC-40

    TC55188

    Abstract: TC55188T-25 TC55188T-20 TC55188T
    Text: •»ilK 2 - W A Y 4,096 W ORDS x 18 BITS/8,192 WORDS x 18 BITS CMOS STATIC CACHE DATA RAM DESCRIPTION The TC55188T is a 147,456bits high-speed static RAM which can be user-configured either a s 2-way 4,096 words by 18 bits or as 8,192 words by 18 bits. It is provided with a byte control, on-chip


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    PDF TC55188T 456bits TC55188T--20, TC55188T-25, 55188T-30 TC55188 TC55188T-25 TC55188T-20

    TC518129

    Abstract: de interlace
    Text: TOSHIBA TC518129AP/ASP/AF/AFW-80/10/12 TC518129APL/ASPL/AFL/AFWL30/10/12 TC518129AFTLS0/10/12 SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The T C 5 1 8 1 2 9 A is a 1M bit high speed C M O S p se udo static R AM organized as 131,07 2 w o rd s by 8 bits. The TC 5 18 1 29A utilizes


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    PDF TC518129AP/ASP/AF/AFW-80/10/12 TC518129APL/ASPL/AFL/AFWL30/10/12 TC518129AFTLS0/10/12 TC518129APL/ASPL/AFL/AFWL/AFTL-80/10/12 AO-A16 TC518129 de interlace