48Z02
Abstract: 232268 "lithium battery pack" pinout
Text: Issued March 1997 232-2683 Data Pack H Static RAM with battery back-up 48Z02 Data Sheet RS stock number 301-016 A 2K ϫ 8 bit CMOS static RAM with integral lithium batteries giving data retention for up to ten years. All control and switching circuitry is included on chip for data
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48Z02
48Z02
232268
"lithium battery pack" pinout
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48Z02
Abstract: "lithium battery pack" pinout
Text: Issued March 1987 005-471 Data Pack H Static RAM with battery back-up 48Z02 Data Sheet RS stock number 301-016 A 2K ϫ 8 bit CMOS static RAM with integral lithium batteries giving data retention for up to ten years. All control and switching circuitry is included on chip for data
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48Z02
48Z02
"lithium battery pack" pinout
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EDI8F81025C100B6C
Abstract: EDI8F81025C70B6C EDI8F81025C85B6C EDI8F81025LP70B6C
Text: EDI8F81025C 1Megx8 SRAM Module 1Megx8 Static RAM CMOS, Module Features The EDI8F81025C is an 8 megabit CMOS Static RAM based on two 512Kx8 Static RAMs mounted on a multilayered epoxy laminate FR4 substrate. A low power version with data retention (EDI8F81025LP) is
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EDI8F81025C
EDI8F81025C
512Kx8
EDI8F81025LP)
100ns
EDI8F81025LP
EDI8F81025C70B6C
EDI8F81025C70B6I.
01581USA
EDI8F81025C100B6C
EDI8F81025C85B6C
EDI8F81025LP70B6C
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H547
Abstract: No abstract text available
Text: Issued March 1987 H5471 Static RAM with battery back-up48Z02 Stocknumber 301-016 A 2K x 8 bit CMOS static RAM with integral lithium batteries giving data retention for up to ten years. All control and switching circuitry is included on chip for data integrity at all times.
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H5471
48Z02
H547
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PCF8570CP
Abstract: PCF8570CT
Text: INTEGRATED CIRCUITS DATA SHEET PCF8570C 256 x 8-bit static low-voltage RAM with I2C-bus interface Preliminary specification Supersedes data of August 1994 File under Integrated Circuits, IC12 1997 Apr 01 Philips Semiconductors Preliminary specification 256 × 8-bit static low-voltage RAM with
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PCF8570C
SCA53
417067/1200/02/pp20
PCF8570CP
PCF8570CT
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ddr ram repair
Abstract: PCF8570CP PCF8570CT
Text: INTEGRATED CIRCUITS DATA SHEET PCF8570C 256 x 8-bit static low-voltage RAM with I2C-bus interface Preliminary specification Supersedes data of August 1994 File under Integrated Circuits, IC12 1997 Apr 01 Philips Semiconductors Preliminary specification 256 × 8-bit static low-voltage RAM with
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PCF8570C
SCA53
417067/1200/02/pp20
ddr ram repair
PCF8570CP
PCF8570CT
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PDF
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ic software program pcf8583
Abstract: PCF8583 PCF8583P PCF8583T Philips pcf8583p PCF8583 an MRB003
Text: INTEGRATED CIRCUITS DATA SHEET PCF8583 Clock Calendar with 256 x 8-bit Static RAM Product specification File under Integrated Circuits, IC01 October 1991 Philips Semiconductors Product specification Clock Calendar with 256 x 8-bit Static RAM PCF8583 FEATURES
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PCF8583
PCF8583
2048-bit
ic software program pcf8583
PCF8583P
PCF8583T
Philips pcf8583p
PCF8583 an
MRB003
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Untitled
Abstract: No abstract text available
Text: U621708 128K x 8 SRAM Features Description S 131072 x 8 bit static CMOS RAM S 70 ns Access Time S Common data inputs and The U621708 is a static RAM manufactured using a CMOS process technology with the following operating modes: - Read - Standby - Write - Data Retention
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U621708
U621708
D-01109
D-01101
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PCF8570P
Abstract: PCF8570 PCF8570T
Text: INTEGRATED CIRCUITS DATA SHEET PCF8570 256 x 8-bit static low-voltage RAM with I2C-bus interface Product specification Supersedes data of 1997 Sep 02 File under Integrated Circuits, IC12 1999 Jan 06 Philips Semiconductors Product specification 256 × 8-bit static low-voltage RAM with
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PCF8570
SCA61
415106/00/04/pp20
PCF8570P
PCF8570
PCF8570T
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PDF
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PCF8570P
Abstract: P80CLXXX PCF8570 PCF8570T
Text: INTEGRATED CIRCUITS DATA SHEET PCF8570 256 x 8-bit static low-voltage RAM with I2C-bus interface Preliminary specification File under Integrated Circuits, IC12 Philips Semiconductors August 1994 Philips Semiconductors Preliminary specification 256 × 8-bit static low-voltage RAM with
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PCF8570
PCF8570
SCD34
493061/1500/01/pp20
PCF8570P
P80CLXXX
PCF8570T
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PDF
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9398 393 40011
Abstract: PCF8570T P80CLXXX PCF8570 PCF8570P
Text: INTEGRATED CIRCUITS DATA SHEET PCF8570 256 x 8-bit static low-voltage RAM with I2C-bus interface Preliminary specification File under Integrated Circuits, IC12 Philips Semiconductors August 1994 Philips Semiconductors Preliminary specification 256 × 8-bit static low-voltage RAM with
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PCF8570
PCF8570
SCD34
493061/1500/01/pp20
9398 393 40011
PCF8570T
P80CLXXX
PCF8570P
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PDF
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P80CLXXX
Abstract: PCF8570 PCF8570P PCF8570T MBA605
Text: INTEGRATED CIRCUITS DATA SHEET PCF8570 256 x 8-bit static low-voltage RAM with I2C-bus interface Preliminary specification File under Integrated Circuits, IC12 Philips Semiconductors August 1994 Philips Semiconductors Preliminary specification 256 × 8-bit static low-voltage RAM with
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PCF8570
PCF8570
P80CLXXX
PCF8570P
PCF8570T
MBA605
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PDF
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Untitled
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS DAT PCF8570 256 x 8-bit static low-voltage RAM with I2C-bus interface Product specification Supersedes data of 1997 Sep 02 File under Integrated Circuits, IC12 1999 Jan 06 Philips Semiconductors Product specification 256 × 8-bit static low-voltage RAM with
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PCF8570
SCA61
415106/00/04/pp20
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PDF
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Untitled
Abstract: No abstract text available
Text: Standard Products UT7C138/139 4Kx8/9 Radiation-Hardened Dual-Port Static RAM with Busy Flag Data Sheet January 2002 FEATURES INTRODUCTION G 45ns and 55ns maximum address access time G Asynchronous operation for compatibility with industrystandard 4K x 8/9 dual-port static RAM
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UT7C138/139
MIL-STD-883
68-lead
68-pin
DUALPORT-2-12-97
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5962F1123501QXA
Abstract: SECDED CYPT1049DV33-12FZMB
Text: CYRS1049DV33 4-Mbit 512 K x 8 Static RAM with RadStop Technology 4-Mbit (512 K × 8) Static RAM with RadStop™ Technology Radiation Performance • Radiation Data Features characteristics in a 36-pin ceramic flat package ■ Total dose 300 Krad
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CYRS1049DV33
36-pin
5962F1123501QXA
SECDED
CYPT1049DV33-12FZMB
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a7r smd
Abstract: smd marking A4L smd a4l A1L smd
Text: Standard Products UT7C138/139 4Kx8/9 Radiation-Hardened Dual-Port Static RAM with Busy Flag Preliminary Data Sheet Dec. 1997 FEATURES INTRODUCTION q 45ns and 55ns maximum address access time q Asynchronous operation for compatibility with industrystandard 4K x 8/9 dual-port static RAM
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UT7C138/139
MIL-STD-883
68-lead
68-pin
DUALPORT-2-12-97
a7r smd
smd marking A4L
smd a4l
A1L smd
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dualport
Abstract: smd dual diode A4l smd transistor marking a5l A1L smd diode SMD A11L smd a4l smd transistor A7R marking a7r smd SMD A9L smd diode a3l
Text: Standard Products UT7C138/139 4Kx8/9 Radiation-Hardened Dual-Port Static RAM with Busy Flag Data Sheet January 2002 FEATURES INTRODUCTION q 45ns and 55ns maximum address access time q Asynchronous operation for compatibility with industrystandard 4K x 8/9 dual-port static RAM
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UT7C138/139
MIL-STD-883
68-lead
68-pin
DUALPORT-2-12-97
dualport
smd dual diode A4l
smd transistor marking a5l
A1L smd diode
SMD A11L
smd a4l
smd transistor A7R marking
a7r smd
SMD A9L
smd diode a3l
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L6116PC85
Abstract: L6116NC35 L6116PC35 cy6116 L6116PC45 IDT6116 L6116NC85 L6116PC20
Text: L6116 2K x 8 Static RAM Features Description □ 2K by 8 Static RAM with chip select powerdown, output enable The L6116 is a high-performance, lowpower CMOS static RAM. The storage circuitry is organized as 2048 words by 8 bits per word. The 8 Data In and Data Out signals share I/O
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L6116
IDT6116,
CY7C128/CY6116
24-pin
L6116
I7/07
L6116PC85
L6116NC35
L6116PC35
cy6116
L6116PC45
IDT6116
L6116NC85
L6116PC20
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L7C185NC85
Abstract: l7c185uc85 L7C185NC45 ma 8630 IDT7164 L7C185PC20 L7C185PC25 L7C185PC45 L7C185PC85 L7C185NC35
Text: L7C185 8K x 8 Static RAM Features Description □ 8K by 8 Static RAM with chip select powerdown, output enable The L7C185 is a high-performance, low-power CMOS static RAM. The storage circuitry is organized as 8,192 words by 8 bits per word. The 8 Data In and Data Out signals share I/O
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L7C185
IDT7164,
CY7C185/186
28-pin
L7C185
L7C185NC85
l7c185uc85
L7C185NC45
ma 8630
IDT7164
L7C185PC20
L7C185PC25
L7C185PC45
L7C185PC85
L7C185NC35
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Untitled
Abstract: No abstract text available
Text: L6 1 1 6 2K x 8 Static RAM Features Description_ □ 2K by 8 Static RAM with chip select powerdown, output enable The L6116 is a high-performance, lowpower CMOS static RAM. The storage circuitry is organized as 2048 words by 8 bits per word. The 8 Data
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L6116
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Untitled
Abstract: No abstract text available
Text: L7C162 16K x 4 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION □ 16K x 4 Static RAM with Separate I /O and High Impedance Write The L7C162 is a high-performance, low-power CMOS static RAM. The storage cells are organized as 16,384 words by 4 bits per word. Data In and
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L7C162
L7C162
dMB20
L7C162CMB15
5/24/94-L
28-pin
L7C162KC20
L7C162KC15
L7C162KC12
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LCC 18 Pin Package
Abstract: LCC 16 Pin Package E12M
Text: ma EDI8464C Electronic DeilQns Inc. High Speed 256K Monolithic SRAM 64Kx4 Static RAM CMOS, High Speed Monolithic Features The EDI8464C is a high performance CMOS Static RAM organized as 64Kx4 and it is also available in a low power version, EDI8464LP, with data retention.
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EDI8464C
64Kx4
EDI8464C
EDI8464LP,
MIL-STD-883,
A0-A15
EDI8464C25LB
LCC 18 Pin Package
LCC 16 Pin Package
E12M
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Untitled
Abstract: No abstract text available
Text: 128KX8 NON-VOLATILE RAM M s iR u m m u R • • • • • • GR12882 Plug-in replacement for Static RAM 20 years data retention No erasure required Fast power down Functions as Data or Program RAM No limit to number of programing cycles GR12882 is 128 kilobyte of non-volatile memory which is pin-compatible with normal Static RAM and offers immediate conversion to
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128KX8
GR12882
GR12882
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Untitled
Abstract: No abstract text available
Text: S-2517RL 16K-bit CMOS static RAM The S-2517RL is a 2048-word x 8-bit CMOS static RAM. Its complete CMOS static memory cell provides low power consumption during standby and good reliability. All inputs and outputs can interface directly with T T L data bus.
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S-2517RL
16K-bit
S-2517RL
2048-word
24-pin
16K-EPROM
16K-SRAM
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