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    Eaton Corporation PL7-C16/2-DC

    Circuit breaker; 230/400VAC; 250VDC; Inom: 16A; Poles: 2; Charact: C
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME PL7-C16/2-DC 1
    • 1 $48.6
    • 10 $45.56
    • 100 $42.52
    • 1000 $42.52
    • 10000 $42.52
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    L7C162 Datasheets (30)

    Part ECAD Model Manufacturer Description Curated Type PDF
    L7C162CC12 Logic Devices 16K x 4 Static RAM Original PDF
    L7C162CC15 Logic Devices 16K x 4 Static RAM Original PDF
    L7C162CC20 Logic Devices 16K x 4 Static RAM Original PDF
    L7C162CM15 Logic Devices 16K x 4 Static RAM Original PDF
    L7C162CM20 Logic Devices 16K x 4 Static RAM Original PDF
    L7C162CM25 Logic Devices 16K x 4 Static RAM Original PDF
    L7C162CMB15 Logic Devices 16K x 4 Static RAM Original PDF
    L7C162CMB20 Logic Devices 16K x 4 Static RAM Original PDF
    L7C162CMB25 Logic Devices 16K x 4 Static RAM Original PDF
    L7C162KC12 Logic Devices 16K x 4 Static RAM Original PDF
    L7C162KC15 Logic Devices 16K x 4 Static RAM Original PDF
    L7C162KC20 Logic Devices 16K x 4 Static RAM Original PDF
    L7C162KM15 Logic Devices 16K x 4 Static RAM Original PDF
    L7C162KM20 Logic Devices 16K x 4 Static RAM Original PDF
    L7C162KM25 Logic Devices 16K x 4 Static RAM Original PDF
    L7C162KMB15 Logic Devices 16K x 4 Static RAM Original PDF
    L7C162KMB20 Logic Devices 16K x 4 Static RAM Original PDF
    L7C162KMB25 Logic Devices 16K x 4 Static RAM Original PDF
    L7C162PC12 Logic Devices 16K x 4 Static RAM Original PDF
    L7C162PC15 Logic Devices 16K x 4 Static RAM Original PDF

    L7C162 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CY7C162

    Abstract: L7C162CC12 L7C162CC15 L7C162CC20 L7C162PC12 L7C162PC15 L7C162PC20
    Text: L7C162 L7C162 DEVICES INCORPORATED 16K x 4 Static RAM 16K x 4 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION q 16K x 4 Static RAM with Separate I/O and High Impedance Write q Auto-Powerdown Design q Advanced CMOS Technology q High Speed — to 12 ns maximum


    Original
    PDF L7C162 MIL-STD-883, CY7C162 28-pin L7C162 28-pin CY7C162 L7C162CC12 L7C162CC15 L7C162CC20 L7C162PC12 L7C162PC15 L7C162PC20

    64 CERAMIC LEADLESS CHIP CARRIER LCC

    Abstract: CY7C162 L7C162CC12 L7C162CC15 L7C162CC20 L7C162PC12 L7C162PC15 L7C162PC20
    Text: L7C162 L7C162 DEVICES INCORPORATED 16K x 4 Static RAM 16K x 4 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION q 16K x 4 Static RAM with Separate I/O and High Impedance Write q Auto-Powerdown Design q Advanced CMOS Technology q High Speed — to 12 ns maximum


    Original
    PDF L7C162 MIL-STD-883, CY7C162 28-pin L7C162 L7C162KC20 64 CERAMIC LEADLESS CHIP CARRIER LCC CY7C162 L7C162CC12 L7C162CC15 L7C162CC20 L7C162PC12 L7C162PC15 L7C162PC20

    64 CERAMIC LEADLESS CHIP CARRIER LCC

    Abstract: CY7C162 L7C162CC12 L7C162CC15 L7C162CC20 L7C162PC12 L7C162PC15 L7C162PC20
    Text: L7C162 L7C162 DEVICES INCORPORATED 16K x 4 Static RAM 16K x 4 Static RAM DEVICES INCORPORATED DESCRIPTION The L7C162 is a high-performance, low-power CMOS static RAM. The storage cells are organized as 16,384 words by 4 bits per word. Data In and Data Out are separate. This device is


    Original
    PDF L7C162 L7C162 L7C162KC20 L7C162KC15 L7C162KC12 L7C162KM25 L7C162KM20 L7C162KM15 MIL-STD-883 64 CERAMIC LEADLESS CHIP CARRIER LCC CY7C162 L7C162CC12 L7C162CC15 L7C162CC20 L7C162PC12 L7C162PC15 L7C162PC20

    L29C* 8 pin SMD

    Abstract: 5962-88733 barrel shifter 32-bit 18 x 16 barrel shifter LF2246 LF2247 LF2249 LF2250 LF2272 LF3310
    Text: DEVICES INCORPORATED DSP PRODUCTS PART NO. SPEED ns COM. MIL. PRODUCT DESCRIPTION PACKAGE AVAILABILITY VIDEO IMAGING PRODUCTS LF2242 12/16-bit Half-Band Digital Filter 25 — 44-lead PLCC/PQFP LF2246 LF2247 LF2249 11 x 10-bit Image Filter 11 x 10-bit Image Filter with Coefficient RAM


    Original
    PDF LF2242 12/16-bit 44-lead LF2246 LF2247 LF2249 10-bit 12-bit 120-lead L29C* 8 pin SMD 5962-88733 barrel shifter 32-bit 18 x 16 barrel shifter LF2246 LF2247 LF2249 LF2250 LF2272 LF3310

    Untitled

    Abstract: No abstract text available
    Text: L7C162 16K x 4 Static RAM D E V IC E S IN C O R P O R A T E D DESCRIPTION FEATURES □ 16K x 4 Static RAM with Separate 1 /O and High Impedance Write □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 12 ns maximum □ Low Power Operation


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    PDF L7C162 MIL-STD-883, CY7C162 28-pin L7C162 L7C162KC20

    Untitled

    Abstract: No abstract text available
    Text: L7C162 16K x 4 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION □ 16K x 4 Static RAM with Separate I /O and High Impedance Write The L7C162 is a high-performance, low-power CMOS static RAM. The storage cells are organized as 16,384 words by 4 bits per word. Data In and


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    PDF L7C162 L7C162 dMB20 L7C162CMB15 5/24/94-L 28-pin L7C162KC20 L7C162KC15 L7C162KC12

    CY7C161

    Abstract: No abstract text available
    Text: LOGIC DEVICES INC SbE D • SSbS'lOS 0 0 0 1 0 3 0 b ÊÊ _ 16KX 4 Static RAM L 7 C 1 6 1 /1 6 2 DESCRIPTION □ 16K x 4 Static RAM with Separate I/O , Transparent Write L7C161 , or High Impedance Write (L7C162) □ Auto-Powerdown Design □ Advanced CMOS Technology


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    PDF L7C161) L7C162) CY7C161/162 28-pin L7C161 CY7C161

    Untitled

    Abstract: No abstract text available
    Text: L7C161/162 16Kx 4 Static RAM DESCRIPTION FEATURES □ 16K x 4 Static RAM with Separate I/O , Transparent Write L7C161 , or I ligh Im pedance Write (L7C162) U A uto-Pow erdow n D esign □ A dvan ced CM O S Technology □ High Speed — to 8 ns m axim um


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    PDF L7C161) L7C162) 7C161/162 28-pin L7C161/162

    Untitled

    Abstract: No abstract text available
    Text: L7C162 1 6 K x 4 Static RAM DEVICES INCORPORATED FEATURES | DESCRIPTION □ 16K x 4 Static RAM with Separate I /O and High Im pedance W rite □ A uto-Pow erdow n Design □ A dvanced CMOS Technology □ H igh Speed — to 12 ns m axim um □ Low Pow er O peration


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    PDF L7C162 IL-STD-883, 28-pin L7C162 28-pin L7C162KC20

    Elap 78

    Abstract: No abstract text available
    Text: L7C162 16K x 4 Static RA M DESCRIPTION □ 16K x 4 Static RAM w ith Separate I /O and H igh Im pedance W rite □ A uto-Pow erdow n Design □ A dvanced CMOS Technology □ High Speed — to 12 ns m axim um □ Low Pow er Operation Active: 325 m W typical at 25 ns


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    PDF L7C162 IL-STD-883, 28-pin L7C162PI20 L7C162PI15 L7C162PI12 L7C162WI20 Elap 78

    CONTACTOR

    Abstract: No abstract text available
    Text: L7C162 1 6 K x 4 S t a t ic R A M FEATURES □ 16K x 4 Static RAM w ith Separate I/O and H igh Im pedance Write □ A uto-Powerdown Design □ A dvanced CMOS Technology □ High Speed — to 12 ns m aximum □ Low Pow er O peration Active: 325 mW typical at 25 ns


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    PDF L7C162 MIL-STD-883, CY7C162 28-pin L7C162 L7C162CM CONTACTOR

    Untitled

    Abstract: No abstract text available
    Text: L7C162 16K x 4 Static R A M FEATURES □ 16K x 4 Static RAM with Separate I/O and High Impedance Write □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 12 ns maximum □ Low Power Operation Active: 325 mW typical at 25 ns Standby: 400 [iW typical


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    PDF L7C162 MIL-STD-883, CY7C162 28-pin L7C162 L7C162CM25 L7C162CM20

    Untitled

    Abstract: No abstract text available
    Text: LOGIC DEVICES ^XNC IbE D •I SSh5T0S GOO.flSbb =1 ■ 16K x 4 Static RAM L7C 1 61/1 62 T - t t -23-/0 Features Description □ 16K by 4 Static RAM with separate I/O , transparent write L7C161 , or high impedance write (L7C162) The L7C161 and L7C162 are highperformance, low-power CMOS static


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    PDF L7C161) L7C162) L7C161 L7C162

    Untitled

    Abstract: No abstract text available
    Text: 16K x 4 Static RAM FEATURES □ 16K x 4 Static RAM with Separate I/O , Transparent Write L7C161 , or High Impedance Write (L7C162) □ Auto-Powerdown Design □ Advanced CMOS Technology □ H ighspeed — to 8 ns maximum □ Low Power Operation Active: 210 mW typical at 35 ns


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    PDF L7C161) L7C162) CY7C161/162 28-pin L7C161

    Untitled

    Abstract: No abstract text available
    Text: L7C162 16K x 4 Static RAM D E V IC E S IN C O R P O R A T E D DESCRIPTION FEATURES □ 16K x 4 Static RAM with Separate 1/O and High Impedance Write □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 12 ns maximum □ Low Power Operation


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    PDF L7C162 MIL-STD-883, CY7C162 28-pin L7C162

    Untitled

    Abstract: No abstract text available
    Text: 16K x 4 Static RAM L 7 C 1 6 1 /1 62 Features Description_ □ 16K by 4 Static RAM with separate I/O , transparent write L7C161 , or high impedance write (L7C162) The L7C161 and L7C162 are highperformance, low-power CMOS static RAMs. The storage cells are organ­


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    PDF L7C161) L7C162) L7C161 L7C162

    4Kx4

    Abstract: No abstract text available
    Text: Typical DC & AC Characteristics 1 6 K & 6 4 K Static RAMs The following Figures 1 through 8 represent typical DC and AC characteristic curves for the 16K and 64K static RAM products listed below: 16K Static R A M s 64K Static RA M s L7C167 L7C168 L7C170 L7C171


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    PDF L7C167 L7C168 L7C170 L7C171 L7C172 L6116 L6116L 16Kxl L7C187 L7C164 4Kx4

    STATIC RAM 8464

    Abstract: IMS1433 SSM6116 IMS1630 SSM6171 SSM7188 hitachi selection guide SSM7164 hm6264 ic 6116 ram
    Text: 16K Product S e le c tio n -C ro s s Reference Guide 16K Static RAM — Product Selection Typical Power mW Maximum Speed (ns) Part No/'» L7C167 Description Packages Available121 Com. Mil. Oper. Inactive Pins 8 10 135 75 20 DIP, LCC SOIC (Gull-Wing) SOJ (J-Lead)


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    PDF L7C167 L7C168 L7C170 L7C171 L7C172 L6116/ L6116L L7C183 CY7C183 L7C184 STATIC RAM 8464 IMS1433 SSM6116 IMS1630 SSM6171 SSM7188 hitachi selection guide SSM7164 hm6264 ic 6116 ram

    Untitled

    Abstract: No abstract text available
    Text: L O G I C L 7 C 1 6 2 1 6 K x 4 Static RAM DEVICES INCORPORATED FEATURES ESCRIPTIQf □ 16K x 4 Static RAM with Separate I/O and High Impedance Write □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 12 ns maximum □ Low Power Operation


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    PDF MIL-STD-883, CY7C162 28-pin L7C162 162PI20 L7C162PI15 L7C162PI12

    Untitled

    Abstract: No abstract text available
    Text: L7C1R2 *- — • — - - L 7 C 1 G2 16K x 4 Static RAM JbVUI-S ■ : XJHHO -■AI h □ 16K x 4 Static RAM w ith Separate 1 / 0 and High Im pedance Write □ Auto-Powerdown Design □ A dvanced CMOS Technology □ H igh S p eed — to 12 n s m ax im u m


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    PDF MIL-STD-883, CY7C162 L7C162 fouCM15 MJL-STD-883 L7C162CMB25 L7C162CMB20 L7C162CMB15 05/01/97-LDS 162-D

    Package 48 LCC

    Abstract: No abstract text available
    Text: Static RAM Package Availability Guide Package Availability Code*2* Part No.O No. Pins Plastic DIP Sldebraze Hermetic DIP CerDIP SOIC Gull-Wing SOJ Plastic (J-Lead] LCC Ceramic LCC 16K Static RAMs K6 L7C167 20 P6 D7 C2 U3 W3 L7C168 20 P6 D7 C2 U3 W3 L7C170


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    PDF L7C167 L7C168 L7C170 L7C171 L7C172 L6116 L7C187 L7C164 L7C165 L7C166 Package 48 LCC

    tk1413

    Abstract: 150KH 4920DY 1E25B
    Text: Final E le c tric a l S p e c ific a tio n s LTC1625 H i m TECHNOLOGY No R s e n s e Current M ode Synchronous Step-Down Switching Regulator July 1998 DCSCMCTIOn FCflTURCS Highest Efficiency Current Mode Controller No Sense Resistor Required Stable High Current Operation


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    PDF LTC1625 16-Lead LTC1435A 436A-PLL LTC1430 LTC1438 1538-AUX tk1413 150KH 4920DY 1E25B