L7C162CC20 Search Results

L7C162CC20 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
L7C162CC20		Logic Devices	16K x 4 Static RAM		Original	PDF

L7C162CC20 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
CY7C162 Abstract: L7C162CC12 L7C162CC15 L7C162CC20 L7C162PC12 L7C162PC15 L7C162PC20 Text: L7C162 L7C162 DEVICES INCORPORATED 16K x 4 Static RAM 16K x 4 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION q 16K x 4 Static RAM with Separate I/O and High Impedance Write q Auto-Powerdown Design q Advanced CMOS Technology q High Speed — to 12 ns maximum	Original	L7C162 MIL-STD-883, CY7C162 28-pin L7C162 28-pin CY7C162 L7C162CC12 L7C162CC15 L7C162CC20 L7C162PC12 L7C162PC15 L7C162PC20	PDF
64 CERAMIC LEADLESS CHIP CARRIER LCC Abstract: CY7C162 L7C162CC12 L7C162CC15 L7C162CC20 L7C162PC12 L7C162PC15 L7C162PC20 Text: L7C162 L7C162 DEVICES INCORPORATED 16K x 4 Static RAM 16K x 4 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION q 16K x 4 Static RAM with Separate I/O and High Impedance Write q Auto-Powerdown Design q Advanced CMOS Technology q High Speed — to 12 ns maximum	Original	L7C162 MIL-STD-883, CY7C162 28-pin L7C162 L7C162KC20 64 CERAMIC LEADLESS CHIP CARRIER LCC CY7C162 L7C162CC12 L7C162CC15 L7C162CC20 L7C162PC12 L7C162PC15 L7C162PC20	PDF
64 CERAMIC LEADLESS CHIP CARRIER LCC Abstract: CY7C162 L7C162CC12 L7C162CC15 L7C162CC20 L7C162PC12 L7C162PC15 L7C162PC20 Text: L7C162 L7C162 DEVICES INCORPORATED 16K x 4 Static RAM 16K x 4 Static RAM DEVICES INCORPORATED DESCRIPTION The L7C162 is a high-performance, low-power CMOS static RAM. The storage cells are organized as 16,384 words by 4 bits per word. Data In and Data Out are separate. This device is	Original	L7C162 L7C162 L7C162KC20 L7C162KC15 L7C162KC12 L7C162KM25 L7C162KM20 L7C162KM15 MIL-STD-883 64 CERAMIC LEADLESS CHIP CARRIER LCC CY7C162 L7C162CC12 L7C162CC15 L7C162CC20 L7C162PC12 L7C162PC15 L7C162PC20	PDF
Untitled Abstract: No abstract text available Text: L7C162 16K x 4 Static RAM D E V IC E S IN C O R P O R A T E D DESCRIPTION FEATURES □ 16K x 4 Static RAM with Separate 1 /O and High Impedance Write □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 12 ns maximum □ Low Power Operation	OCR Scan	L7C162 MIL-STD-883, CY7C162 28-pin L7C162 L7C162KC20	PDF
Untitled Abstract: No abstract text available Text: L7C162 16K x 4 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION □ 16K x 4 Static RAM with Separate I /O and High Impedance Write The L7C162 is a high-performance, low-power CMOS static RAM. The storage cells are organized as 16,384 words by 4 bits per word. Data In and	OCR Scan	L7C162 L7C162 dMB20 L7C162CMB15 5/24/94-L 28-pin L7C162KC20 L7C162KC15 L7C162KC12	PDF
Untitled Abstract: No abstract text available Text: L O G I C L 7 C 1 6 2 1 6 K x 4 Static RAM DEVICES INCORPORATED FEATURES ESCRIPTIQf □ 16K x 4 Static RAM with Separate I/O and High Impedance Write □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 12 ns maximum □ Low Power Operation	OCR Scan	MIL-STD-883, CY7C162 28-pin L7C162 162PI20 L7C162PI15 L7C162PI12	PDF
Untitled Abstract: No abstract text available Text: L7C1R2 *- — • — - - L 7 C 1 G2 16K x 4 Static RAM JbVUI-S ■ : XJHHO -■AI h □ 16K x 4 Static RAM w ith Separate 1 / 0 and High Im pedance Write □ Auto-Powerdown Design □ A dvanced CMOS Technology □ H igh S p eed — to 12 n s m ax im u m	OCR Scan	MIL-STD-883, CY7C162 L7C162 fouCM15 MJL-STD-883 L7C162CMB25 L7C162CMB20 L7C162CMB15 05/01/97-LDS 162-D	PDF
Elap 78 Abstract: No abstract text available Text: L7C162 16K x 4 Static RA M DESCRIPTION □ 16K x 4 Static RAM w ith Separate I /O and H igh Im pedance W rite □ A uto-Pow erdow n Design □ A dvanced CMOS Technology □ High Speed — to 12 ns m axim um □ Low Pow er Operation Active: 325 m W typical at 25 ns	OCR Scan	L7C162 IL-STD-883, 28-pin L7C162PI20 L7C162PI15 L7C162PI12 L7C162WI20 Elap 78	PDF
CONTACTOR Abstract: No abstract text available Text: L7C162 1 6 K x 4 S t a t ic R A M FEATURES □ 16K x 4 Static RAM w ith Separate I/O and H igh Im pedance Write □ A uto-Powerdown Design □ A dvanced CMOS Technology □ High Speed — to 12 ns m aximum □ Low Pow er O peration Active: 325 mW typical at 25 ns	OCR Scan	L7C162 MIL-STD-883, CY7C162 28-pin L7C162 L7C162CM CONTACTOR	PDF
Untitled Abstract: No abstract text available Text: L7C162 16K x 4 Static R A M FEATURES □ 16K x 4 Static RAM with Separate I/O and High Impedance Write □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 12 ns maximum □ Low Power Operation Active: 325 mW typical at 25 ns Standby: 400 [iW typical	OCR Scan	L7C162 MIL-STD-883, CY7C162 28-pin L7C162 L7C162CM25 L7C162CM20	PDF
Untitled Abstract: No abstract text available Text: LOGIC DEVICES ^XNC IbE D •I SSh5T0S GOO.flSbb =1 ■ 16K x 4 Static RAM L7C 1 61/1 62 T - t t -23-/0 Features Description □ 16K by 4 Static RAM with separate I/O , transparent write L7C161 , or high impedance write (L7C162) The L7C161 and L7C162 are highperformance, low-power CMOS static	OCR Scan	L7C161) L7C162) L7C161 L7C162	PDF
L7C162DC8 Abstract: L7C161PC35 L7C161 ma 8630 L7C161PC20 L7C161PC25 L7C161PC45 L7C161PC85 DM-85 L7C162DC2S Text: L7C161/162 16K x 4 Static RAM Features Description □ 16K by 4 Static RAM w ith separate I/O , transparent w rite L7C161 , or h ig h im pedance w rite (L7C162) The L7C161 an d L7C162 are high performance, low -pow er CMOS static RAMs. The storage cells are organ	OCR Scan	L7C161/162 L7C161) L7C162) CY7C161/162 28-pin L7C161/162 L7C161 L7C162 L7C162DC8 L7C161PC35 ma 8630 L7C161PC20 L7C161PC25 L7C161PC45 L7C161PC85 DM-85 L7C162DC2S	PDF
Untitled Abstract: No abstract text available Text: 16K x 4 Static RAM L 7 C 1 6 1 /1 62 Features Description_ □ 16K by 4 Static RAM with separate I/O , transparent write L7C161 , or high impedance write (L7C162) The L7C161 and L7C162 are highperformance, low-power CMOS static RAMs. The storage cells are organ	OCR Scan	L7C161) L7C162) L7C161 L7C162	PDF