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    CY27S03A

    Abstract: 15JC10 CY7C190 cy7c9101 cy7c122 die VIC068A user guide
    Text: Thermal Management and Component Reliability slope of the logarithmic plots is given by the activation energy of the failure mechanisms causing thermally activated wear out of the device see Figure 1 . One of the key variables determining the long-term reliability


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    PDF CY7C122 CY27S03A 15JC10 CY7C190 cy7c9101 cy7c122 die VIC068A user guide

    CY7C9101

    Abstract: CY7C510 CY7C190 cy7c189 G30-88 CY7c910 EA 9394 cy3341 CY6116 cy7c901
    Text: fax id: 8511 Thermal Management Thermal Management and Component Reliability One of the key variables determining the long-term reliability of an integrated circuit is the junction temperature of the device during operation. Long-term reliability of the semiconductor chip degrades proportionally with increasing temperatures following an exponential function described by the


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    Untitled

    Abstract: No abstract text available
    Text: CY7C183 CY7C184 CYPRESS SEMICONDUCTOR Features • Pin-programmable into directmapped or two-way set-associative format • CMOS for optimum speed/power • H ighspeed — 20 n s • Common I/O • Internal address latch • TTL-compatible inputs and outputs


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    PDF CY7C183 CY7C184

    Untitled

    Abstract: No abstract text available
    Text: PRELIM IN ARY CYPRESS SEMICONDUCTOR CY7C183 CY7C184 2 x 4096 x 16 Cache RAM Features • Pin programmable into direct mapped or two-way set associative format • CMOS for optimum speed/ power • High speed—25 ns • Common I/O • Internal address latch


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    PDF CY7C183 CY7C184 CY7C183 CY7C184 16-bit

    CY7C183

    Abstract: CY7C184 CY7C184-25JC oec18 7C183
    Text: CY7C183 CY7C184 CYPRESS SEMICONDUCTOR Features • Pin-programmable into directmapped or two-way set-associative format • CMOS for optimum speed/power • High speed — 20 ns • Common I/O • Internal address latch • TTL-compatible inputs and outputs


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    PDF CY7C183 CY7C184 CY7C184are 16-bit CY7C184â 35LMB CY7C184-25JC oec18 7C183

    7C184

    Abstract: No abstract text available
    Text: CY7C183 CY7C184 CYPRESS SEMICONDUCTOR Features • Pin-programmable into directmapped or two-way set-associative format • CMOS for optimum speed/power • H ighspeed — 20 ns • Common I/O • Internal address latch • TTL-compatible inputs and outputs


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    PDF CY7C183 CY7C184 7C184

    40ebl

    Abstract: No abstract text available
    Text: Data Sheet January 1992 ATT7C183 ATT7C184 ^ A T fiT Microelectronics High-Speed CMOS SRAM 128 Kbit 2 x 4K x 16 or 8K x 16 Cache-Data Features • High-speed — 25 ns maximum access time Plug-compatible with Cypress CY7C183/184 ■ Direct map or two-way set associative


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    PDF ATT7C183 ATT7C184 CY7C183/184 48-pin, ATT7C184 7C194 ATT7C183 52-Pin, 40ebl

    toshiba 32k*8 sram

    Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
    Text: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258


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    PDF KM4164 KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 toshiba 32k*8 sram M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 TC51464

    STATIC RAM 8464

    Abstract: IMS1433 SSM6116 IMS1630 SSM6171 SSM7188 hitachi selection guide SSM7164 hm6264 ic 6116 ram
    Text: 16K Product S e le c tio n -C ro s s Reference Guide 16K Static RAM — Product Selection Typical Power mW Maximum Speed (ns) Part No/'» L7C167 Description Packages Available121 Com. Mil. Oper. Inactive Pins 8 10 135 75 20 DIP, LCC SOIC (Gull-Wing) SOJ (J-Lead)


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    PDF L7C167 L7C168 L7C170 L7C171 L7C172 L6116/ L6116L L7C183 CY7C183 L7C184 STATIC RAM 8464 IMS1433 SSM6116 IMS1630 SSM6171 SSM7188 hitachi selection guide SSM7164 hm6264 ic 6116 ram

    Untitled

    Abstract: No abstract text available
    Text: L7C183/184 2 x 4K x 16 Cache-Data Static RAM DESCRIPTION FEATURES □ 2 x 4K x 16 or 8K x 16 Cache-Data Static RAM with Direct Map or Two-Way Set Associative □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 20 ns worst-case □ Low Power Operation


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    PDF CY7C183/184 48-pin 52-pin L7C183/184 Z0000Z00002Z>

    400X1

    Abstract: CY7C183
    Text: PRELIMINARY CYPRESS SEMICONDUCTOR Features • Pin-programmable into directmapped or two-way set-associative format • CMOS for optimum speed/power • High speed — 25 ns • Common I/O • Interna! address latch • TTL-compatible inputs and outputs • Capable o f withstanding greater than


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    PDF CY7C183 CY7C184 7C184-45LM 400X1

    Untitled

    Abstract: No abstract text available
    Text: LOGIC DEVICES INC 2bE D • SSbSTGS OGQlQib 3 ■ 2 x 4 K x 16 Cache-Data Static RAM DESCRIPTION FEATURES □ 2 x 4K x 16 or 8K x 16 Cache-Data Static RAM with Direct Map or Two-Way Set Associative □ Auto-Powerdown Design □ Advanced CMOS Technology


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    PDF CY7C183/184 48-pin 52-pin L7C183/184 L7C183 L7C184

    8k x 16 bit ram

    Abstract: No abstract text available
    Text: PRELIMINARY CYPRESS SEMICONDUCTOR Features • Pin-program m able into directmapped or two-way set associative format • CM OS for optim um speed/power • High speed — 25 ns • Com m on I/O • Internal address latch • TTL-com patible inputs and outputs


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    PDF CY7C183 CY7C184 CY7C184-35LMB CY7C184-45JC CY7C184-45LMB 8-00090-A 8k x 16 bit ram

    CY7C169

    Abstract: 54600
    Text: Thermal Management CYPRESS Part Number CY7B173 CY7B174 CY7B180 CY7B181 CY7B185 CY7B186 CY7B191 CY7B192 CY7B194 CY7C122 CY7C123 CY7C128 CY7C128A CY7C130 CY7C131 CY7C132 CY7C136 CY7C140 CY7C141 CY7C142 CY7C146 CY7C147 CY7C148 CY7C149 CY7C150 CY7C157 CY7C161A


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    PDF CY7B173 CY7B174 CY7B180 CY7B181 CY7B185 CY7B186 CY7B191 CY7B192 CY7B194 CY7C122 CY7C169 54600