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    onsemi STB33N10E

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    STB33N10 Datasheets Context Search

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    STP4119

    Abstract: Full-bridge SG3525 APPLICATION NOTES sg3525 application note mc34063 step up with mosfet mc34063 step down with mosfet Full-bridge SG3525 sg3525 pwm INVERTER MJ2955 300 watts amplifier circuit diagram MT3336 sg3535a
    Text: ON Semiconductor Master Components Selector Guide Power Management, Amplifiers and Comparators, Analog Switches, Thyristors, Diodes, Rectifiers, Bipolar Transistors, FETs, Circuit Protection, Clock and Data Management, Interface, and Standard Logic Devices


    Original     		PDF SG388/D May-2007 STP4119 Full-bridge SG3525 APPLICATION NOTES sg3525 application note mc34063 step up with mosfet mc34063 step down with mosfet Full-bridge SG3525 sg3525 pwm INVERTER MJ2955 300 watts amplifier circuit diagram MT3336 sg3535a

    132/DD 127 D TRANSISTOR

    Abstract: No abstract text available
    Text: fZ 7 ^ 7# S G S -T H O M S O N iMinEasiigiLECTiaMnies S T B 3 3 N 10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss 100 STB33N10 V RdS oii Id < 0.06 Q 33 A . . . . • . . . TYPICAL RDS(on) = 0.045 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    OCR Scan     		PDF STB33N10 O-262) O-263) O-262 O-263 D723D4 132/DD 127 D TRANSISTOR

    STB33N10

    Abstract: GC511
    Text: SGS-THOMSON Z S T B 3 3 N 10 R aDeæ i[Liero iDei i! N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E STB33N10 V dss RDS on Id 100 V < 0.06 Ç1 33 A • ■ . . ■ . . . TYPICAL RDS(on) = 0.045 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    OCR Scan     		PDF STB33N10 O-262) O-263) GC511